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21. 发明申请

US20070183188A1 Magnetic device using magnetic domain dragging and method of operating the same 有权
标题翻译：磁性装置使用磁畴拖曳及其操作方法
公开(公告)号：US20070183188A1
公开(公告)日：2007-08-09
申请号：US11657646
申请日：2007-01-25
申请人： Kee-won Kim , Tae-wan Kim , Young-jin Cho , In-Jun Hwang
发明人： Kee-won Kim , Tae-wan Kim , Young-jin Cho , In-Jun Hwang
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C19/0808
摘要： Example embodiments may provide a magnetic device using magnetic domain dragging and a method of operating the same. An example embodiment magnetic device may include a data storage cell with a free layer having a switchable magnetization direction and a plurality of adjoining magnetic domains, a reference layer formed to correspond to a portion of the free layer and having a pinned magnetization direction, wherein a plurality of data bit regions may be formed in an array in the free layer, each of the data bit regions being formed with an effective size unit of the reference layer, so that the data storage cell may store a plurality of bits of data in an array, and a first input portion electrically connected to at least one of the data bit regions of the free layer and the reference layer to apply at least one of a writing signal and a reading signal; and a second input portion electrically connected to the free layer to drag data stored in data bit regions of the free layer toward an adjacent data bit region, and applying a dragging signal for magnetic domain dragging.
摘要翻译：示例性实施例可以提供使用磁畴牵引的磁性装置及其操作方法。一个示例性实施例磁性装置可以包括具有自由层的数据存储单元，该自由层具有可切换的磁化方向和多个相邻的磁畴，所述参考层形成为对应于自由层的一部分并且具有钉扎的磁化方向，其中a 可以在自由层中的阵列中形成多个数据位区域，每个数据位区域由参考层的有效大小单位形成，使得数据存储单元可以在多个数据位区域中存储多个数据位阵列，以及电连接到自由层和参考层的数据位区域中的至少一个的第一输入部分，以施加写信号和读信号中的至少一个; 以及第二输入部分，其电连接到所述自由层，以将存储在所述自由层的数据位区域中的数据拖向相邻数据位区域，以及施加用于磁畴拖动的拖动信号。

22. 发明申请

US20060118891A1 Precursor for hafnium oxide layer and method for forming hafnium oxide film using the precursor 有权
标题翻译：氧化铪前体和使用前体形成氧化铪膜的方法
公开(公告)号：US20060118891A1
公开(公告)日：2006-06-08
申请号：US11340692
申请日：2006-01-27
申请人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
IPC分类号： H01L21/16
CPC分类号： H01L21/02181 , C01G27/02 , C01G27/04 , C01P2006/80 , C07F7/003 , H01L21/02205 , H01L21/28194 , H01L21/3141 , H01L21/31645 , H01L29/517
摘要： A hafnium oxide precursor and a method for forming a hafnium oxide layer using the precursor are provided. The hafnium oxide precursor contains a nitrogen compound bound to HfCl4.
摘要翻译：提供氧化铪前体和使用前体形成氧化铪层的方法。氧化铪前体含有与HfCl 4结合的氮化合物。

23. 发明授权

US07030450B2 Precursor for hafnium oxide layer and method for forming halnium oxide film using the precursor 失效
标题翻译：氧化铪前体和使用前体形成氧化铪膜的方法
公开(公告)号：US07030450B2
公开(公告)日：2006-04-18
申请号：US10638329
申请日：2003-08-12
申请人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
IPC分类号： H01L29/76
CPC分类号： H01L21/02181 , C01G27/02 , C01G27/04 , C01P2006/80 , C07F7/003 , H01L21/02205 , H01L21/28194 , H01L21/3141 , H01L21/31645 , H01L29/517
摘要： A hafnium oxide precursor and a method for forming a hafnium oxide layer using the precursor are provided. The hafnium oxide precursor contains a nitrogen compound bound to HfCl4.
摘要翻译：提供氧化铪前体和使用前体形成氧化铪层的方法。氧化铪前体含有与HfCl 4结合的氮化合物。

24. 发明授权

US08525601B2 Oscillators using magnetic domain wall and methods of operating the same 有权
标题翻译：振荡器采用磁畴壁和操作方法相同
公开(公告)号：US08525601B2
公开(公告)日：2013-09-03
申请号：US12654703
申请日：2009-12-29
申请人： Sung-chul Lee , Mathias Klaui , Sun-ae Seo , Young-jin Cho , Ung-hwan Pi , Ji-young Bae , Jin-seong Heo
发明人： Sung-chul Lee , Mathias Klaui , Sun-ae Seo , Young-jin Cho , Ung-hwan Pi , Ji-young Bae , Jin-seong Heo
IPC分类号： H03B17/00
CPC分类号： H03B15/006 , Y10T428/1121
摘要： An oscillator generates a signal using precession of a magnetic moment of a magnetic domain wall. The oscillator includes a free layer having the magnetic domain wall and a fixed layer corresponding to the magnetic domain wall. A non-magnetic separation layer is interposed between the free layer and the fixed layer.
摘要翻译：振荡器使用磁畴壁的磁矩的进动产生信号。振荡器包括具有磁畴壁的自由层和对应于磁畴壁的固定层。非磁性分离层介于自由层和固定层之间。

25. 发明授权

US08313847B2 Information storage devices using magnetic domain wall movement 有权
标题翻译：信息存储设备采用磁畴壁运动
公开(公告)号：US08313847B2
公开(公告)日：2012-11-20
申请号：US12155980
申请日：2008-06-12
申请人： Young-jin Cho , Ji-young Bae , Sung-chul Lee
发明人： Young-jin Cho , Ji-young Bae , Sung-chul Lee
IPC分类号： G11B5/66
CPC分类号： G11C19/0841 , G11C5/02 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： Information storage devices are provided. An information storage device includes a track including at least one Co alloy layer and a soft magnetic layer. The track further includes a plurality of magnetic domains. A current applying element is connected to the track. The track includes a plurality of layers stacked alternately.
摘要翻译：提供信息存储设备。一种信息存储装置，包括至少一个Co合金层和软磁性层的轨道。轨道还包括多个磁畴。电流施加元件连接到轨道。轨道包括交替堆叠的多个层。

26. 发明申请

US20110045318A1 Tracks including magnetic layer and magnetic memory devices comprising the same 失效
标题翻译：包含磁性层的磁迹和包括磁性层的磁存储装置
公开(公告)号：US20110045318A1
公开(公告)日：2011-02-24
申请号：US12662215
申请日：2010-04-06
申请人： Sung-chul Lee , Sun-ae Seo , Young-jin Cho , Ung-hwan Pi , Jin-seong Heo , Ji-young Bae
发明人： Sung-chul Lee , Sun-ae Seo , Young-jin Cho , Ung-hwan Pi , Jin-seong Heo , Ji-young Bae
IPC分类号： G11B5/66
CPC分类号： G11B5/72 , G11B5/7325 , G11C11/14
摘要： A magnetic memory device includes a track in which different non-magnetic layers are respectively formed on upper and lower surfaces of a magnetic layer. One of the two non-magnetic layers includes an element having an atomic number greater than or equal to 12. Accordingly, the magnetic layer has a relatively high non-adiabaticity (β).
摘要翻译：一种磁存储器件包括其中分别在磁性层的上表面和下表面上形成不同非磁性层的轨道。两个非磁性层中的一个包括具有大于或等于12的原子序数的元素。因此，磁性层具有相对高的非绝热性（＆Bgr）。

27. 发明申请

US20090073859A1 Magnetic tracks, information storage devices using magnetic domain wall movement, and methods of manufacturing the same 有权
标题翻译：磁轨，使用磁畴壁运动的信息存储装置及其制造方法
公开(公告)号：US20090073859A1
公开(公告)日：2009-03-19
申请号：US12155896
申请日：2008-06-11
申请人： Young-jin Cho , Sung-chul Lee , Kwang-seok Kim , Ji-young Bae , Sun-ae Seo , Chang-won Lee
发明人： Young-jin Cho , Sung-chul Lee , Kwang-seok Kim , Ji-young Bae , Sun-ae Seo , Chang-won Lee
IPC分类号： G11B3/00
CPC分类号： G11C19/0841 , G11C11/14
摘要： Information storage devices and methods of manufacturing the same are provided. A magnetic track of the information storage device includes a magnetic layer in which at least one magnetic domain forming region and at least one magnetic domain wall forming region are alternately disposed in a lengthwise direction. The at least one magnetic domain forming regions has a different magnetic anisotropic energy relative to the at least one magnetic domain wall forming region. An intermediate layer is formed under the magnetic layer. The intermediate layer includes at least one first material region and at least one second material region. Each of the at least one first material regions and the at least one second material regions corresponds to one of the at least one magnetic domain forming regions and the at least one magnetic domain wall forming regions.
摘要翻译：提供信息存储装置及其制造方法。信息存储装置的磁道包括其中至少一个磁畴形成区域和至少一个磁畴壁形成区域沿长度方向交替布置的磁性层。所述至少一个磁畴形成区域相对于所述至少一个磁畴壁形成区域具有不同的磁各向异性能量。中间层形成在磁性层下面。中间层包括至少一个第一材料区域和至少一个第二材料区域。所述至少一个第一材料区域和所述至少一个第二材料区域中的每一个对应于所述至少一个磁畴形成区域和所述至少一个磁畴壁形成区域中的一个。

28. 发明授权

US07379322B2 Amorphous high-k thin film and manufacturing method thereof 失效
标题翻译：非晶高k薄膜及其制造方法
公开(公告)号：US07379322B2
公开(公告)日：2008-05-27
申请号：US11354013
申请日：2006-02-15
申请人： Yo-sep Min , Young-jin Cho
发明人： Yo-sep Min , Young-jin Cho
IPC分类号： G11C11/22
CPC分类号： C23C16/40 , C23C16/45525 , C23C16/45531 , H01L21/02175 , H01L21/02178 , H01L21/02186 , H01L21/02194 , H01L21/0228 , H01L21/3141 , H01L21/31616 , H01L21/31691 , H01L28/55
摘要： An amorphous high-k thin film for a semiconductor device and a manufacturing method thereof are provided. The amorphous high-k thin film includes Bi, Ti, Al, and O. Since a BTAO based amorphous dielectric thin film is used as a dielectric material of a DRAM capacitor, a dielectric constant is more than 25, and an increase of a leakage current caused in reducing a physical thickness of the dielectric thin film can be prevented. Accordingly, it is very useful for the integration of the semiconductor device.
摘要翻译：提供了一种用于半导体器件的非晶高k薄膜及其制造方法。无定形高k薄膜包括Bi，Ti，Al和O.由于使用基于BTAO的非晶介质薄膜作为DRAM电容器的介电材料，介电常数大于25，并且泄漏增加可以防止在减小电介质薄膜的物理厚度时引起的电流。因此，对于半导体器件的集成是非常有用的。

29. 发明授权

US07374994B2 Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film 失效
标题翻译：铋钛氧化硅，铋钛氧化硅薄膜，以及薄膜形成方法
公开(公告)号：US07374994B2
公开(公告)日：2008-05-20
申请号：US11136456
申请日：2005-05-25
申请人： Young-jin Cho , Yo-sep Min , Young-soo Park , Jung-hyun Lee , June-key Lee , Yong-kyun Lee
发明人： Young-jin Cho , Yo-sep Min , Young-soo Park , Jung-hyun Lee , June-key Lee , Yong-kyun Lee
IPC分类号： H01L21/8242
CPC分类号： H01L21/28185 , C01G29/006 , C01P2002/36 , C01P2002/72 , C01P2002/77 , C01P2002/85 , C01P2002/89 , C01P2004/03 , C01P2004/04 , C01P2004/80 , C01P2006/40 , C04B35/16 , C04B35/475 , C04B35/6264 , C04B2235/3232 , C04B2235/3298 , C04B2235/3418 , C04B2235/441 , C04B2235/444 , C04B2235/658 , C04B2235/6581 , C04B2235/76 , H01L21/28194 , H01L21/31691 , H01L28/55 , H01L29/516 , H01L29/517
摘要： A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.
摘要翻译：具有烧绿石相的铋钛氧化硅，由氧化铋钛氧化物形成的薄膜，用于形成铋钛氧化硅薄膜的方法，用于半导体器件的电容器和晶体管，所述半导体器件包括铋钛 - 氧化硅薄膜以及采用电容器和/或晶体管的电子器件。铋钛氧化硅具有良好的介电性能，并且是热和化学稳定的。铋钛氧化硅薄膜可以有效地用作半导体器件中的电容器或晶体管的栅极电介质膜的电介质膜。可以使用具有铋钛 - 氧化硅膜的电容器和/或晶体管来制造具有良好电性能的各种电子器件。

30. 发明申请

US20080013369A1 Magnetic tunneling junction based logic circuits an methods of operating the same 有权
标题翻译：基于磁隧道结的逻辑电路的操作方法
公开(公告)号：US20080013369A1
公开(公告)日：2008-01-17
申请号：US11654002
申请日：2007-01-17
申请人： Tae-wan Kim , Kee-won Kim , Hyung-soon Shin , Seung-jun Lee , In-jun Hwang , Young-jin Cho
发明人： Tae-wan Kim , Kee-won Kim , Hyung-soon Shin , Seung-jun Lee , In-jun Hwang , Young-jin Cho
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , H03K19/18 , H03K19/21
摘要： MTJ cell based logic circuits and MTJ cell drivers having improved operating speeds compared to the conventional art, and operating methods thereof are described. An MTJ cell driver may include a lower electrode, an MTJ cell on the lower electrode, an upper electrode on the MTJ cell, and first through third input lines arranged in parallel above the upper electrode
摘要翻译：描述了与传统技术相比具有改进的操作速度的基于MTJ单元的逻辑电路和MTJ单元驱动器及其操作方法。 MTJ单元驱动器可以包括下电极，下电极上的MTJ单元，MTJ单元上的上电极以及平行于上电极上方布置的第一至第三输入线

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