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21. 发明专利

DE68918799D1 未知
公开(公告)号：DE68918799D1
公开(公告)日：1994-11-17
申请号：DE68918799
申请日：1989-11-03
申请人： SHARP KK
发明人： SEKI AKINORI , KONUSHI FUMIHIRO , KUDO JUN , KOBA MASAYOSHI
IPC分类号： H01L21/20 , H01L21/205 , H01L21/338 , H01L29/812 , H01L31/04 , H01L31/10 , H01L33/30 , H01L33/34 , H01S5/00
摘要： Disclosed is a compound semiconductor substrate having a III-V group compound semiconductor layer on a IV group substrate, which has substantially no residual stress and few crystalline defect. The substrate comprises; (a) a IV group substrate, (b) a first III-V group compound semiconductor layer formed on the substrate, (c) a second compound semiconductor layer having such a lattice constant as to produce a stress in a direction opposite to the stress which occurs during the time of forming said first semiconductor layer due to a difference of thermal expansion coefficient between said substrate and said first semiconductor layer, formed on said first semiconductor layer, and (d) a third III-V group compound semiconductor layer similar to the first semiconductor layer, formed on said second semiconductor layer.

22. 发明专利

GB2174108A Method for forming a polycrystalline silicon thin film 未知
公开(公告)号：GB2174108A
公开(公告)日：1986-10-29
申请号：GB8608218
申请日：1986-04-04
申请人： SHARP KK
发明人： HARA TERUYOSHI , KAWAMURA AKIO , IGUCHI KATSUJI , SEKI AKINORI , KUDO JUN , KOBA MASAYOSHI
IPC分类号： C23C14/14 , C23C14/32
摘要： A method for forming a thin polycrystalline silicon film utilizing ions comprises the steps of heating silicon to vacuum, ionizing and accelerating at least a portion of evaporated silicon and, thereafter, bombarding said silicon onto a substrate simultaneously with the remaining neutral silicon, whereby a thin film having a high density, and a high degree of purity is formed. The method may constitute ion plating, ion beam deposition or ionized cluster beam deposition.

23. 发明专利

DE69633423T2 未知
公开(公告)号：DE69633423T2
公开(公告)日：2005-09-29
申请号：DE69633423
申请日：1996-05-02
申请人： SHARP KK
发明人： SATOH SAKIKO , KIJIMA TAKESHI , MATSUNAGA HIRONORI , KOBA MASAYOSHI
IPC分类号： C01G29/00 , C30B29/32 , H01L21/02 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8246 , H01L21/8247 , H01L27/04 , H01L27/10 , H01L27/105 , H01L29/788 , H01L29/792 , H01L37/02 , H01L49/02 , H01L21/3205 , C23C16/40
摘要： A ferroelectric thin film coated substrate is obtained by a producing method of forming a crystalline thin film on a substrate by means of a MOCVD method at a substrate temperature at which crystal grows and of forming a ferroelectric thin film on the crystalline thin film by means of the MOCVD method at a film forming temperature, which is lower than the film forming temperature of the crystalline thin film. This producing method makes it possible to produce a ferroelectric thin film, where a surface of the thin film is dense and even, leakage current properties are excellent and sufficiently large remanent spontaneous polarization is shown, at a lower temperature.

24. 发明专利

DE69610517D1 未知
公开(公告)号：DE69610517D1
公开(公告)日：2000-11-09
申请号：DE69610517
申请日：1996-03-07
申请人： SHARP KK
发明人： KIJIMA TAKESHI , SATOH SAKIKO , MATSUNAGA HIRONORI , KOBA MASAYOSHI
IPC分类号： C01G29/00 , C23C16/02 , C23C16/40 , H01B3/00 , H01B3/12 , H01B17/60 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792 , H01L49/02 , G11C11/22 , H01L27/115
摘要： To provide a ferroelectrics thin-film coated substrate manufacturable in a low-temperature process by using a ferroelectrics having a dense and even surface and exhibiting a large residual spontaneous polarization, and the manufacture method thereof. A ferroelectrics thin-film coated substrate (1) comprising a structure that a buffer (5), a growth layer (6) allowing a ferroelectrics thin-film to grow, and a ferroelectrics thin-film (7) made of a ferroelectric material having a layered crystalline structure expressed in the chemical formula Bi2 Am-1 Bm O3m+3 (A is selected from Na , K , Pb , Ca , Sr , Ba , Bi and the like, B is selected from Fe , Ti , Nb , Ta , W and Mo , and m is an integer not less than 1) are formed in succession.

25. 发明专利

DE69518121D1 未知
公开(公告)号：DE69518121D1
公开(公告)日：2000-08-31
申请号：DE69518121
申请日：1995-05-09
申请人： SHARP KK
发明人： MASUDA YOSHIYUKI , KITA RYUSUKE , ARAI HISAKO , OHTANI NOBORU , KOBA MASAYOSHI
IPC分类号： C01B13/14 , C01G21/00 , C01G23/00 , C23C18/12 , C30B5/00 , H01B3/00 , H01L37/02 , H01L41/39

26. 发明专利

DE69603801T2 未知
公开(公告)号：DE69603801T2
公开(公告)日：2000-01-13
申请号：DE69603801
申请日：1996-06-28
申请人： SHARP KK
发明人： ARAI HISAKO , MASUDA YOSHIYUKI , KITA RYUSUKE , OHTANI NOBORU , MATSU YOSHIYUKI , KOBA MASAYOSHI
IPC分类号： C04B35/46 , C01B13/14 , C23C14/08 , C23C14/34 , C23C14/35 , C23C14/54 , C23C14/58 , H01L21/283
摘要： An oxide dielectric thin film is obtained by sputtering. After the formation of the oxide dielectric thin film, the evacuation of the film forming chamber is suspended, without taking the sample out of the film forming chamber. Oxygen gas is introduced into the film forming chamber so that the pressure is 200 Pa. After the sample is kept in the oxygen gas for 5 minutes at a temperature of 350 DEG C, it is cooled down in the same atmosphere of oxygen at a cooling speed of 3 DEG C/min.

27. 发明专利

DE69512186D1 未知
公开(公告)号：DE69512186D1
公开(公告)日：1999-10-21
申请号：DE69512186
申请日：1995-05-31
申请人： SHARP KK
发明人： KIJIMA TAKESHI , SATOH SAKIKO , MATSUNAGA HIRONORI , KOBA MASAYOSHI , OHTANI NOBORU
IPC分类号： C01G49/00 , C01G29/00 , C23C16/40 , C23C16/56 , H01B3/02 , H01B3/10 , H01B3/12 , H01B17/60 , H01B19/00 , H01L21/336 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792 , H01L41/39 , H01L49/02 , C30B1/00 , C30B25/02 , C30B31/02
摘要： A close a-axis orientating film having a smooth surface and excellent ferroelectric characteristics is manufactured at a low temperature with preferable reproducibility to apply ferroelectric Bi4Ti3O12 to development of various kinds of devices such as a ferroelectric non-volatile memory. a pyroelectric sensor, etc. A ferroelectric Bi4Ti3O12 thin film is formed on a substrate through a titanium oxide buffer layer so that closeness and surface smoothness of the Bi4Ti3O12 thin film manufactured on the titanium oxide buffer layer can be improved.

28. 发明专利

DE69030049T2 未知
公开(公告)号：DE69030049T2
公开(公告)日：1997-10-16
申请号：DE69030049
申请日：1990-10-26
申请人： SHARP KK
发明人： NOJIMA HIDEO , KOBA MASAYOSHI , NAGATA MASAYA , SHINTAKU HIDETAKA
IPC分类号： H01L39/14 , H01L39/24

29. 发明专利

DE69116736T2 未知
公开(公告)号：DE69116736T2
公开(公告)日：1996-10-02
申请号：DE69116736
申请日：1991-05-21
申请人： SHARP KK
发明人： SHINTAKU HIDETAKA , KOBA MASAYOSHI
IPC分类号： G01R33/035 , G01R33/09 , H01L39/00 , H01L39/22
摘要： The superconductor magneto-resistive element 14 is installed in a center portion surrounded by two coils 15 and 16 which generate A.C. and D.C. bias magnetic fields respectively. The coils 15 and 16 are respectively connected to A.C. and D.C. power sources for applying A.C. and D.C. bias magnetic field to the element 14. With the output signal of the element 14, the fundamental component having the frequency component same as that of the A.C. bias magnetic field and the quadratic harmonic component having the frequency component twice as that of the fundamental component are calculated using the Fourier transform. The calculated value of the fundamental component is divided by the value of the quadratic harmonic component, thereby removing the change of the output signal of the element 14 due to the fluctuation inherent in the element 14, enabling to measure an external magnetic field with high accuracy.

30. 发明专利

DE68924209T2 未知
公开(公告)号：DE68924209T2
公开(公告)日：1996-04-04
申请号：DE68924209
申请日：1989-07-04
申请人： SHARP KK
发明人： MIYAJIMA TOSHIAKI , KIOI KAZUMASA , MATUNAMI MITUO , DOI TUKASA , YOSHIOKA MINORU , KOBA MASAYOSHI
IPC分类号： H01L27/142 , H01L27/144 , H01L31/167 , H01L31/18

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