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21. 发明申请

WO2016054150A1 MOVABLE ULTRAVIOLET RADIATION SOURCE 审中-公开
标题翻译：可移动超紫外线辐射源
公开(公告)号：WO2016054150A1
公开(公告)日：2016-04-07
申请号：PCT/US2015/053120
申请日：2015-09-30
申请人： SENSOR ELECTRONIC TECHNOLOGY, INC.
发明人： DOBRINSKY, Alexander , SHUR, Michael , GASKA, Remigijus
IPC分类号： B65D51/24 , B65D81/28 , A61L2/10
CPC分类号： A23L3/28 , B65D81/24
摘要： A solution for treating a surface with ultraviolet radiation is provided. A movable ultraviolet source is utilized to emit a beam of ultraviolet radiation having a characteristic cross-sectional area smaller than an area of the surface to be treated. The movable ultraviolet source can be moved as necessary to directly irradiate any portion of the surface with radiation within the characteristic cross-sectional area of the beam of ultraviolet radiation. The movement can include, for example, rotational movement and/or repositioning the movable ultraviolet source with respect to the surface.
摘要翻译：提供了一种用紫外线辐射处理表面的方法。利用可移动的紫外线源发射具有小于待处理表面的面积的特征横截面积的紫外线辐射束。可移动的紫外线源可以根据需要移动，以在紫外线辐射束的特征横截面积内的辐射直接照射表面的任何部分。该运动可以包括例如相对于表面旋转移动和/或重新定位可移动的紫外光源。

22. 发明申请

WO2015034865A1 OPTOELECTRONIC DEVICE WITH MODULATION DOPING 审中-公开
标题翻译：具有调制输入功能的光电装置
公开(公告)号：WO2015034865A1
公开(公告)日：2015-03-12
申请号：PCT/US2014/053791
申请日：2014-09-03
申请人： SENSOR ELECTRONIC TECHNOLOGY, INC.
发明人： JAIN, Rakesh , SHATALOV, Maxim, S. , YANG, Jinwei , DOBRINSKY, Alexander , SHUR, Michael , GASKA, Remigijus
IPC分类号： H01L33/06
CPC分类号： H01L31/035272 , H01L33/04 , H01L33/32
摘要： An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.
摘要翻译：提供了一种用于光电子器件的改进的异质结构。异质结构包括有源区，电子阻挡层和p型接触层。 p型接触层和电子阻挡层可以掺杂有p型掺杂剂。电子阻挡层的掺杂剂浓度可以是p型接触层的掺杂剂浓度的至多10％。还描述了设计这种异质结构的方法。

23. 发明申请

WO2013138575A1 DEEP ULTRAVIOLET LIGHT EMITTING DIODE 审中-公开
标题翻译：深层紫外线发光二极管
公开(公告)号：WO2013138575A1
公开(公告)日：2013-09-19
申请号：PCT/US2013/031267
申请日：2013-03-14
申请人： SENSOR ELECTRONIC TECHNOLOGY, INC
发明人： GASKA, Remigijus , SHATALOV, Maxim, S. , SHUR, Michael , DOBRINSKY, Alexander
IPC分类号： H01L33/04 , H01L33/32
CPC分类号： H01L33/06 , H01L33/32
摘要： A light emitting diode is provided, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure.
摘要翻译：提供一种发光二极管，其包括n型接触层和与n型接触层相邻的发光结构。光产生结构包括一组量子阱。接触层和发光结构可以被配置成使得n型接触层的能量与量子阱的电子基态能量之间的差大于光的材料中的极性光学声子的能量生成结构。另外，发光结构可以被配置为使得其宽度与用于通过注入到光产生结构中的电子发射极性光学声子的平均自由程相当。

24. 发明申请

WO2013138573A1 SEMICONDUCTOR MATERIAL DOPING 审中-公开
标题翻译：半导体材料掺杂
公开(公告)号：WO2013138573A1
公开(公告)日：2013-09-19
申请号：PCT/US2013/031263
申请日：2013-03-14
申请人： SENSOR ELECTRONIC TECHNOLOGY, INC.
发明人： SHATALOV, Maxim, S , GASKA, Remigijus , YANG, Jinwei , SHUR, Michael , DOBRINSKY, Alexander
IPC分类号： H01L21/20 , H01L33/14
CPC分类号： H01L21/02389 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02573 , H01L33/06 , H01L33/32
摘要： A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).
摘要翻译：提供了一种用于设计和/或制造包括量子阱和相邻屏障的结构的解决方案。选择量子阱和相邻屏障之间的目标频带不连续性以与量子阱和/或屏障的掺杂剂的活化能一致。例如，可以选择目标价带不连续性，使得相邻势垒中的掺杂剂的掺杂剂能级与量子阱的价态能带边缘和/或价态能带中的自由载流子的基态能量一致量子阱。另外，可以选择量子阱和/或相邻势垒的目标掺杂水平以促进穿过势垒的空穴的实际空间传递。可以形成量子阱和相邻势垒，使得实际的带不连续性和/或实际掺杂水平对应于相关目标。

25. 发明申请

WO2018062885A8 CONTROLLING ULTRAVIOLET INTENSITY OVER A SURFACE OF A LIGHT SENSITIVE OBJECT 审中-公开
公开(公告)号：WO2018062885A8
公开(公告)日：2018-04-05
申请号：PCT/KR2017/010790
申请日：2017-09-28
申请人： SEOUL VIOSYS CO., LTD. , SENSOR ELECTRONIC TECHNOLOGY, INC.
发明人： BARBER, Arthur Peter, III. , SHATALOV, Maxim S. , DOBRINSKY, Alexander , SHUR, Michael
IPC分类号： A01G7/04 , A01G7/06 , A01G1/00 , G06Q50/02
摘要： An approach for controlling ultraviolet intensity over a surface of a light sensitive object is described. Aspects involve using ultraviolet radiation with a wavelength range that includes ultraviolet-A and ultraviolet-B radiation to irradiate the surface. Light sensors measure light intensity at the surface, wherein each sensor measures light intensity in a wavelength range that corresponds to a wavelength range emitted from at least one of the sources. A controller controls the light intensity over the surface by adjusting the power of the sources as a function of the light intensity measurements. The controller uses the light intensity measurements to determine whether each source is illuminating the surface with an intensity that is within an acceptable variation with a predetermined intensity value targeted for the surface. The controller adjusts the power of the sources as a function of the variation to ensure an optimal distribution of light intensity over the surface.

26. 发明申请

WO2017188718A1 SOLID-STATE LIGHTING SOURCE WITH INTEGRATED ELECTRONIC MODULATOR 审中-公开
标题翻译：带集成电子调制器的固态照明光源
公开(公告)号：WO2017188718A1
公开(公告)日：2017-11-02
申请号：PCT/KR2017/004417
申请日：2017-04-26
申请人： SEOUL VIOSYS CO., LTD. , SENSOR ELECTRONIC TECHNOLOGY, INC.
发明人： SIMIN, Grigory , SHUR, Michael , DOBRINSKY, Alexander
IPC分类号： H01L33/48 , H01L25/075 , H01L33/00 , H01L27/105
CPC分类号： H05B33/0809 , H01L25/167 , H01L27/15 , H01L33/60 , H05B33/0845
摘要： A solid-state light source (SSLS) with an integrated electronic modulator is described. A device can include a SSLS having an active p-n junction region is formed within the SSLS for electron-hole pair recombination and light emission the active p-n junction region can include a n-type semiconductor layer, a p-type semiconductor layer and a light generating structure formed there between. A pair of current supply electrodes can be formed to receive a drive current from a current supply source that drives the SSLS. A field-effect transistor (FET) modulator can be monolithically integrated with the SSLS for modulation thereof. The FET modulator can receive a modulation voltage from a modulation voltage source. The modulation voltage includes voltage pulses having a pulse amplitude and polarity to turn on and off current flowing through the FET modulator. These voltage pulses enable the FET modulator to control the drive current supplied to the SSLS.
摘要翻译：描述了具有集成电子调制器的固态光源（SSLS）。器件可以包括具有有源pn结区的SSLS形成在SSLS内用于电子 - 空穴对复合和发光，有源pn结区可以包括n型半导体层，p型半导体层和产生光结构之间形成结构。可以形成一对电流供应电极以接收来自驱动SSLS的电流源的驱动电流。场效应晶体管（FET）调制器可以与SSLS单片集成以对其进行调制。 FET调制器可以从调制电压源接收调制电压。调制电压包括具有脉冲振幅和极性的电压脉冲，以导通和关断流过FET调制器的电流。这些电压脉冲使FET调制器能够控制提供给SSLS的驱动电流。

27. 发明申请

WO2017136509A1 CURING ULTRAVIOLET SENSITIVE POLYMER MATERIALS 审中-公开
标题翻译：固化紫外线敏感聚合物材料
公开(公告)号：WO2017136509A1
公开(公告)日：2017-08-10
申请号：PCT/US2017/016148
申请日：2017-02-02
申请人： SENSOR ELECTRONIC TECHNOLOGY, INC. , SEOUL VIOSYS CO., LTD.
发明人： BETTLES, Timothy, James , SHUR, Michael , DOBRINSKY, Alexander , SHATALOV, Maxim, S.
IPC分类号： B29C35/08 , B29C35/00
CPC分类号： C09D5/32 , B05D3/067 , C08J7/123 , C09D11/101 , C09D201/00 , C09J9/00 , C09J201/00 , G21K5/02
摘要： An approach for curing ultraviolet sensitive polymer materials (e.g., polymer inks, coatings, and adhesives) using ultraviolet radiation is disclosed. The ultraviolet sensitive polymer materials curing can utilize ultraviolet light at different wavelength emissions arranged in a random, mixed or sequential arrangement. In one embodiment, an ultraviolet light C (UV-C) radiation emitter having a set of UV-C sources that emit UV-C radiation at a predetermined UV-C duration and intensity operate in conjunction with an ultraviolet light B (UV-B) radiation emitter having a set of UV-B sources configured to emit UV-B radiation at a predetermined UV-B duration and intensity and/or an ultraviolet light A (UV-A) radiation emitter having a set of UV-A sources configured to emit UV-A radiation at a predetermined UV-A duration and intensity, to cure the ultraviolet sensitive polymer materials.
摘要翻译：公开了一种使用紫外辐射固化紫外线敏感聚合物材料（例如聚合物油墨，涂料和粘合剂）的方法。紫外线敏感聚合物材料固化可以利用以随机，混合或顺序布置排列的不同波长发射的紫外光。在一个实施例中，具有以预定的UV-C持续时间和强度发射UV-C辐射的一组UV-C源的紫外光C（UV-C）辐射发射器与紫外光B（UV-B ）辐射发射器，其具有配置成以预定的UV-B持续时间和强度发射UV-B辐射的一组UV-B辐射源和/或具有配置的一组UV-A辐射源的紫外光A（UV-A）辐射发射器以预定的UV-A持续时间和强度发射UV-A辐射，以固化紫外线敏感聚合物材料。

28. 发明申请

WO2017004497A1 SUBSTRATE STRUCTURE REMOVAL 审中-公开
标题翻译：基板结构拆卸
公开(公告)号：WO2017004497A1
公开(公告)日：2017-01-05
申请号：PCT/US2016/040656
申请日：2016-07-01
申请人： SENSOR ELECTRONIC TECHNOLOGY, INC.
发明人： SHUR, Michael , DOBRINSKY, Alexander , SHATALOV, Maxim, S.
IPC分类号： H01L21/768 , H01L21/268 , H01L21/20
CPC分类号： H01L33/0079 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/02507 , H01L21/0254 , H01L21/02664 , H01L21/304 , H01L21/30612 , H01L21/6835 , H01L21/7813 , H01L33/007 , H01L2221/68368 , H01L2221/68381
摘要： Fabrication of a heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can be epitaxially grown on a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.
摘要翻译：描述了用于光电子器件的诸如III族氮化物异质结构的异质结构的制造。异质结构可以在位于衬底结构上的牺牲层上外延生长。牺牲层可以使用激光至少部分分解。衬底结构可以从异质结构完全去除或保持附着于其上。可以使用用于将衬底结构从异质结构分离的一种或多种另外的解决方案。异质结构可经历附加处理以形成光电器件。

29. 发明申请

WO2015127399A1 SEMICONDUCTOR STRUCTURE WITH STRESS-REDUCING BUFFER STRUCTURE 审中-公开
标题翻译：具有应力减小缓冲结构的半导体结构
公开(公告)号：WO2015127399A1
公开(公告)日：2015-08-27
申请号：PCT/US2015/017161
申请日：2015-02-23
申请人： SENSOR ELECTRONIC TECHNOLOGY, INC.
发明人： SHATALOV, Maxim, S. , YANG, Jinwei , DOBRINSKY, Alexander , SHUR, Michael , GASKA, Remigijus
IPC分类号： H01L33/12
CPC分类号： H01L33/12 , G06F17/505 , H01L33/0025 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/145 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/46
摘要： A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 GPa and 2.0 GPa. The buffer structure can be grown using a set of growth parameters selected to achieve the target effective lattice constant a, control stresses present during growth of the buffer structure, and/or control stresses present after the semiconductor structure has cooled.
摘要翻译：提供一种半导体结构，包括缓冲结构和与缓冲结构的第一侧相邻形成的一组半导体层。缓冲结构可以具有有效的晶格常数和厚度，使得该组半导体层在室温下的总应力是压缩的并且在约0.1GPa和2.0GPa之间的范围内。可以使用选择的一组生长参数来生长缓冲结构，以实现目标有效晶格常数a，缓冲结构生长期间存在的控制应力和/或半导体结构冷却后存在的控制应力。

30. 发明申请

WO2015061325A1 HETEROSTRUCTURE INCLUDING A COMPOSITE SEMICONDUCTOR LAYER 审中-公开
标题翻译：包括复合半导体层的结构
公开(公告)号：WO2015061325A1
公开(公告)日：2015-04-30
申请号：PCT/US2014/061586
申请日：2014-10-21
申请人： SENSOR ELECTRONIC TECHNOLOGY, INC.
发明人： SHATALOV, Maxim, S. , JAIN, Rakesh , YANG, Jinwei , DOBRINSKY, Alexander , SHUR, Michael , GASKA, Remigijus
IPC分类号： H01L27/10 , H01L27/04
CPC分类号： H01L29/151 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02505 , H01L21/02513 , H01L21/0254 , H01L21/02587 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L29/0676 , H01L29/068 , H01L29/2003 , H01L29/205 , H01L33/0075 , H01L33/12
摘要： A heterostructure for use in an electronic or optoelectronic device is provided. The heterostructure includes one or more composite semiconductor layers. The composite semiconductor layer can include sub-layers of varying morphology, at least one of which can be formed by a group of columnar structures (e.g., nanowires). Another sub-layer in the composite semiconductor layer can be porous, continuous, or partially continuous.
摘要翻译：提供了用于电子或光电子器件的异质结构。异质结构包括一个或多个复合半导体层。复合半导体层可以包括不同形态的子层，其中至少一个可以由一组柱状结构（例如，纳米线）形成。复合半导体层中的另一个子层可以是多孔的，连续的或部分连续的。

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