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21. 发明授权

US5698883A MOS field effect transistor and method for manufacturing the same 失效
标题翻译： MOS场效应晶体管及其制造方法
公开(公告)号：US5698883A
公开(公告)日：1997-12-16
申请号：US654754
申请日：1996-05-28
申请人： Tomohisa Mizuno
发明人： Tomohisa Mizuno
IPC分类号： H01L21/336 , H01L29/78 , H01L29/76 , H01L27/088 , H01L29/94 , H01L31/062
CPC分类号： H01L29/6659 , H01L29/6656 , H01L29/78 , Y10S257/90
摘要： An MOS field effect transistor is of a lightly doped drain structure. In the transistor, an insulation layer is located on the side wall of a gate electrode. This insulation layer is formed of tantalum oxide, which has a high dielectric constant. Between this insulation layer and a drain region, another insulation layer is formed such that it has a thickness sufficiently greater than the length of the mean free path of the hot carriers which are generated in the vicinity of the drain region.
摘要翻译： MOS场效应晶体管是轻掺杂漏极结构。在晶体管中，绝缘层位于栅电极的侧壁上。该绝缘层由具有高介电常数的氧化钽形成。在该绝缘层和漏极区之间形成另一绝缘层，使得其厚度足够大于在漏极区附近产生的热载流子的平均自由程的长度。

22. 发明授权

US5302845A Transistor with an offset gate structure 失效
标题翻译：具有偏移栅极结构的晶体管
公开(公告)号：US5302845A
公开(公告)日：1994-04-12
申请号：US121292
申请日：1993-09-15
申请人： Jumpei Kumagai , Tomohisa Mizuno
发明人： Jumpei Kumagai , Tomohisa Mizuno
IPC分类号： H01L21/336 , H01L27/088 , H01L29/423 , H01L29/51 , H01L29/78
CPC分类号： H01L27/088 , H01L29/42376 , H01L29/513 , H01L29/518 , H01L29/6656 , H01L29/66575 , H01L29/78 , H01L29/7838 , H01L2924/0002
摘要： At the surface of a p-type silicon substrate, n-type source/drain diffused layers are formed. On the substrate between the source/drain diffused layers, a gate insulating film made of a silicon oxide film is formed so as to be isolated from the diffused layers. A gate electrode is formed on the gate insulating film. Sidewalls are formed on the sides of the gate insulating film and gate electrode, extending upward from the substrate. In this invention, the sidewalls are composed of material whose permittivity is higher than that of the gate insulating film, for example, of a silicon nitride film.
摘要翻译：在p型硅衬底的表面上形成n型源极/漏极扩散层。在源极/漏极扩散层之间的衬底上形成由氧化硅膜形成的栅极绝缘膜，以与扩散层隔离。在栅极绝缘膜上形成栅电极。侧壁形成在栅极绝缘膜和栅电极的从基板向上延伸的侧面上。在本发明中，侧壁由介电常数高于栅极绝缘膜（例如氮化硅膜）的材料构成。

23. 发明授权

US5185646A Semiconductor device with improved current drivability 失效
标题翻译：具有改进的电流驱动性的半导体器件
公开(公告)号：US5185646A
公开(公告)日：1993-02-09
申请号：US644510
申请日：1991-01-23
申请人： Tomohisa Mizuno
发明人： Tomohisa Mizuno
IPC分类号： H01L29/78
CPC分类号： H01L29/7827
摘要： On a semiconductor substrate are formed a plurality of pedestal regions which are of the same conductivity type as the semiconductor substrate. Insulating layers are formed on side surfaces of the pedestal regions. On the insulating layers are formed gate electrodes which are connected together. First and second regions are formed within top portions of the pedestal regions and the semiconductor substrate. The first and second regions serve as source/drain regions and are of the opposite conductivity type to the semiconductor substrate. The first regions, the second regions and the gate electrodes function to form a single transistor because the gate electrodes are connected together.

24. 发明授权

US5119152A MOS semiconductor device having LDD structure 失效
标题翻译：具有LDD结构的MOS半导体器件
公开(公告)号：US5119152A
公开(公告)日：1992-06-02
申请号：US672015
申请日：1991-03-19
申请人： Tomohisa Mizuno
发明人： Tomohisa Mizuno
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L29/6659 , H01L29/6656 , H01L29/78
摘要： Disclosed is a MOS type semiconductor device, particularly, a MOS type transistor of an LDD structure, which is featured in the side wall structure which covers the side surface of a gate electrode formed on the surface of a semiconductor substrate with a first insulating film interposed therebetween. The semiconductor device comprises source and drain regions of a double diffusion structure consisting of an impurity diffusion region of a relatively low impurity concentration formed apart from the gate electrode in the surface region of the semiconductor substrate and positioned below the side wall region of the gate electrode, and an impurity diffusion region of a relatively high impurity concentration formed in the surface region of the semiconductor substrate and positioned outside the gate electrode. The side wall structure of the gate electrode comprises a first material layer having a first dielectric constant and formed as a side wall of the gate electrode on the impurity diffusion region of the relatively low impurity concentration, and a second material layer having a second dielectric constant small than the first dielectric constant and formed as a side wall of the gate electrode to cover the first material layer, said second material layer being positioned to cover the boundary region between the impurity diffusion regions of the low and high impurity concentrations.
摘要翻译：公开了一种MOS型半导体器件，特别是LDD结构的MOS型晶体管，其特征在于侧壁结构，其覆盖形成在半导体衬底的表面上的栅电极的侧表面，其中第一绝缘膜插入之间。该半导体器件包括双扩散结构的源极和漏极区域，该半导体器件由在半导体衬底的表面区域中与栅极电极形成的相对低的杂质浓度的杂质扩散区域构成，并且位于栅电极的侧壁区域的下方以及在半导体衬底的表面区域中形成的位于栅电极外部的杂质浓度较高的杂质扩散区。栅电极的侧壁结构包括具有第一介电常数的第一材料层，并且形成为杂质浓度较低的杂质扩散区上的栅电极的侧壁，以及具有第二介电常数的第二材料层小于第一介电常数，并且形成为栅电极的侧壁以覆盖第一材料层，所述第二材料层被定位成覆盖杂质浓度低和高杂质浓度的杂质扩散区域之间的边界区域。

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