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    • 29. 发明授权
    • Axial flow fan
    • 轴流风机
    • US08197217B2
    • 2012-06-12
    • US11997380
    • 2006-07-31
    • Jiro YamamotoMasahiro ShigemoriKoji Somahara
    • Jiro YamamotoMasahiro ShigemoriKoji Somahara
    • F04D29/38
    • F04D29/384F04D29/164F05D2240/307
    • An axial flow fan is configured to allow leakage flows in regions near rear edges of bent portions formed by bending outer peripheries of blades towards negative pressure surfaces to smoothly flow out to reduce the vortex scale of the leakage flows themselves and to be able to effectively control turbulence of the flows. The axial flow fan includes a bellmouth and blades, with outer peripheries of the blades being bent towards negative pressure surfaces, wherein in regions near rear edges of bent portions that are bent towards the negative pressure surfaces, there are disposed second bent portions formed by bending part of the bent portions further towards the negative pressure surfaces.
    • 轴流风扇被构造成允许在通过将外周的叶片向负压表面弯曲而形成的弯曲部分的后边缘附近的泄漏流动,以平滑地流出以减少泄漏流自身的涡度,并且能够有效地控制 流动的湍流。 轴流风扇包括喇叭口和叶片,叶片的外周向负压表面弯曲,其中在靠近负压表面弯曲的弯曲部分的后边缘附近的区域中,设置有通过弯曲形成的第二弯曲部分 弯曲部分的一部分进一步朝向负压表面。
    • 30. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07816702B2
    • 2010-10-19
    • US12245077
    • 2008-10-03
    • Shinichi SaitoMasahiro AokiHiroyuki UchiyamaHideo ArimotoNoriyuki SakumaJiro Yamamoto
    • Shinichi SaitoMasahiro AokiHiroyuki UchiyamaHideo ArimotoNoriyuki SakumaJiro Yamamoto
    • H01L33/00
    • H01S5/12B82Y20/00H01S5/0424H01S5/0425H01S5/1237H01S5/125H01S5/18341H01S5/3004H01S5/3427H01S2301/176H01S2302/00
    • There are a silicon laser device having a IV-group semiconductor such as silicon or germanium equivalent to the silicon as a basic constituent element on a substrate made of the silicon, and the like by a method capable of easily forming the silicon laser device by using a general silicon process, and a manufacturing method thereof. The silicon laser device is an ultrathin silicon laser that includes a first electrode unit injecting electrons, a second electrode unit injecting holes, a light emitting unit electrically connected to the first electrode unit and the second electrode unit, wherein the light emitting unit is made of single-crystal silicon and has a first surface (top surface) and a second surface (bottom surface) opposed to the first surface, a waveguide made of a first dielectric, which is disposed in the vicinity of the light emitting unit, by setting surface directions of the first and second surfaces as a surface (100) and thinning a thickness of the light emitting unit in a direction perpendicular to the first and second surfaces, and a mirror formed by alternately adjoining the first dielectric and a second dielectric.
    • 存在具有诸如硅等离子体的硅组合半导体的硅激光器装置,其等同于由硅制成的衬底上作为基本构成元件的硅等,通过使用能够容易地形成硅激光器件的方法, 通用硅工艺及其制造方法。 硅激光器件是一种超薄硅激光器,其包括注入电子的第一电极单元,注入空穴的第二电极单元,与第一电极单元和第二电极单元电连接的发光单元,其中发光单元由 单晶硅,并且具有与第一表面相对的第一表面(顶表面)和第二表面(底表面),通过设置在发光单元附近的由第一电介质制成的波导 第一表面和第二表面的方向作为表面(100),并且在垂直于第一和第二表面的方向上减薄发光单元的厚度,以及通过交替地邻接第一电介质和第二电介质而形成的反射镜。