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21. 发明授权

US07726414B2 Hollow piston hammer device with air equilibration and idle openings 失效
标题翻译：中空活塞锤装置具有空气平衡和空闲开口
公开(公告)号：US07726414B2
公开(公告)日：2010-06-01
申请号：US11930839
申请日：2007-10-31
申请人： Rudolf Berger , Wolfgang Schmid
发明人： Rudolf Berger , Wolfgang Schmid
IPC分类号： B25D9/04
CPC分类号： B25D11/125 , B25D11/005 , B25D2250/035 , B25D2250/131
摘要： An air spring hammer device that includes a drive piston, moving axially back and forth, with a front face of hollow embodiment and a hammer piston moving in said hollow. A ventilation slot is embodied in a guide wall of the drive piston. The drive piston may be guided in a guide tube. The guide tube comprises several idle openings. A moving control element is arranged on the exterior of the guide tube, in which control openings, corresponding to the idle openings, are provided. In an idle operating mode, the control element is in an open position, via which the ventilation slot, the idle openings and the control openings can be brought into connection with the environment.
摘要翻译：一种空气弹簧锤装置，其包括驱动活塞，其以中空实施例的前表面轴向前后移动，并且锤活塞在所述中空部中移动。在驱动活塞的引导壁中具有通风槽。驱动活塞可以在导管中被引导。导管包括若干空闲开口。移动控制元件设置在引导管的外部，其中提供对应于空闲开口的控制开口。在空闲操作模式中，控制元件处于打开位置，通风槽，空闲开口和控制开口可通过该位置与环境相连。

22. 发明申请

US20080302548A1 Percussion Hammer and/or Drill Hammer Comprising a Safety Coupling 审中-公开
标题翻译：打击乐锤和/或钻锤包括安全联轴器
公开(公告)号：US20080302548A1
公开(公告)日：2008-12-11
申请号：US11572122
申请日：2005-07-13
申请人： Rudolf Berger , Wolfgang Schmid
发明人： Rudolf Berger , Wolfgang Schmid
IPC分类号： B23Q5/00
CPC分类号： B25D17/00 , B25D2250/205 , B25D2250/301
摘要： A safety coupling in a percussion hammer and/or drill hammer, comprising a basic sleeve, a driven toothed wheel that is rotatably mounted on the basic sleeve and can be driven by a drive unit, a closing ring which is fastened to the basic sleeve, and a locking ring located between the driven toothed wheel and the closing ring. Said locking ring is fixed in a torsion-proof manner relative to the closing ring while being movable relative to the closing ring in an axial direction, counter to the effect of a spring mechanism. The locking ring is axially displaced while the driven toothed wheel remains in the axial position thereof when a threshold torque is exceeded.
摘要翻译：叩击锤和/或钻锤中的安全联接器，包括基本套筒，可旋转地安装在基本套筒上并可由驱动单元驱动的从动齿轮，紧固到基本套筒的闭合环，以及位于从动齿轮和闭环之间的锁定环。相对于弹簧机构的作用，所述锁定环相对于闭合环以相对于闭合环的方式相对于闭合环固定。当超过阈值转矩时，锁定环轴向移位，而从动齿轮保持在其轴向位置。

23. 发明申请

US20080274847A1 BELT TENSIONING DEVICE 审中-公开
标题翻译：皮带张紧装置
公开(公告)号：US20080274847A1
公开(公告)日：2008-11-06
申请号：US12115290
申请日：2008-05-05
申请人： Heinz Lemberger , Rudolf Berger , Manfred Jung , Vladimir Kobelev
发明人： Heinz Lemberger , Rudolf Berger , Manfred Jung , Vladimir Kobelev
IPC分类号： F16H7/12
CPC分类号： F16H7/1218 , F16H2007/081 , F16H2007/0874 , F16H2007/0893
摘要： A belt tensioning device for a continuous belt drive. The device includes a torsion spring assembly (20) with a longitudinal axis (A2) and with at least one torsion bar or torsion tube (32). The torsion spring assembly (20) can be clamped axially and in a rotationally fixed way into a rack. A tensioning arm (19), at one end, is arranged at the torsion spring assembly (20) so as to be aligned approximately radially relative to the longitudinal axis (A2). A tensioning roller (15) is rotatably fixed at the other end of the tensioning arm (19). The axis of rotation (A1) of the tensioning roller (15) extends substantially parallel relative to the longitudinal axis (A2) of the torsion spring assembly (20), and the tensioning arm (19) can be resiliently supported relative to the rack so as to oscillate around the longitudinal axis (A2).
摘要翻译：用于连续皮带传动的皮带张紧装置。该装置包括具有纵向轴线（A 2 2）和至少一个扭杆或扭转管（32）的扭转弹簧组件（20）。扭转弹簧组件（20）可以轴向夹紧并以旋转固定的方式夹紧到机架中。在一个端部处的张紧臂（19）布置在扭转弹簧组件（20）处，以便相对于纵向轴线（A 2> 2）大致径向对准。张紧辊（15）可旋转地固定在张紧臂（19）的另一端。张紧辊（15）的旋转轴线（A 1 SUB）相对于扭转弹簧组件（20）的纵向轴线（A 2 SUB）大致平行延伸，并且张紧臂（19）可以相对于齿条弹性支撑，以围绕纵向轴线（A 2 2）摆动。

24. 发明申请

US20070021253A1 Belt tensioning device 审中-公开
标题翻译：皮带张紧装置
公开(公告)号：US20070021253A1
公开(公告)日：2007-01-25
申请号：US11474592
申请日：2006-06-26
申请人： Vladimir Kobelev , Manfred Jung , Rudolf Berger
发明人： Vladimir Kobelev , Manfred Jung , Rudolf Berger
IPC分类号： F16H7/12 , F16H7/14
CPC分类号： F16H7/1218 , F16H7/1281 , F16H2007/081 , F16H2007/0842
摘要： A belt tensioning device fixable to a unit has a torsion spring assembly. A housing is provided with a longitudinal axis A and a torsion spring is positioned in the housing so as to extend coaxially relative to the longitudinal axis A. One of the ends of the torsion spring is secured to the housing in a rotationally fixed way. A tensioning arm is supported relative to the housing so as to be oscillatingly rotatable around the longitudinal axis A. The tensioning arm is connected to the other end of the torsion spring in a rotationally fixed way. A tensioning roller is supported at a free end of the tensioning arm supported so as to be rotatable around an axis of rotation B extending parallel relative to the longitudinal axis A. The housing has a flange for being fixed to the unit, whose flange plane is passed through by the longitudinal axis A.
摘要翻译：可固定到单元的皮带张紧装置具有扭转弹簧组件。壳体设置有纵向轴线A，并且扭转弹簧定位在壳体中以便相对于纵向轴线A同轴地延伸。扭转弹簧的一个端部以旋转固定的方式固定到壳体。张紧臂相对于壳体被支撑，以便围绕纵向轴线A可摆动地旋转。张紧臂以可旋转地固定的方式连接到扭转弹簧的另一端。张紧辊被支撑在所述张紧臂的自由端，所述张紧臂被支撑为能够围绕相对于所述纵向轴线A平行延伸的旋转轴线B旋转。所述壳体具有用于固定到所述单元的凸缘，所述凸缘的凸缘面为由纵轴A穿过。

25. 发明授权

US6076616A Working tool which can be guided in a grab handle 有权
标题翻译：可以在抓斗中引导的工作工具
公开(公告)号：US6076616A
公开(公告)日：2000-06-20
申请号：US171016
申请日：1998-10-08
申请人： Edith Kramp , Rudolf Berger , Thomas Maurer
发明人： Edith Kramp , Rudolf Berger , Thomas Maurer
IPC分类号： B23B45/16 , B25D17/04 , B25D17/24 , E21B3/00
CPC分类号： B25F5/006 , B25D17/043 , B25D17/24 , B25D2250/221
摘要： A tool having an operating element that is driven by an integrated power drive for the percussive, pounding or vibratory loading of a material to be worked, in particular a tamper, a vibration plate or a vibration roll for ground compaction or a hammer for breaking and/or drilling operations, can be guided using a handle. This handle is actively vibration-damped by at least one actively controlled or regulated compensation element, which counteracts the transmission of a vibration to the handle and which, depending on the vibration that can be transmitted to it and is produced in and/or on the tool, produces a compensating force and/or movement in the potential vibration transmission path from the location of production of the vibration to the handle.
摘要翻译： PCT No.PCT / EP97 / 06242 Sec。 371日期：1998年10月8日 102（e）日期1998年10月8日PCT 1997年11月10日PCT公布。公开号WO98 / 21014 日期1998年5月22日具有操作元件的工具，其由集成的动力驱动器驱动，用于冲击，冲击或振动加载待加工材料，特别是夯锤，振动板或用于地面压实的振动辊用于破碎和/或钻孔操作的锤子，可以使用手柄引导。该手柄被至少一个主动控制或调节的补偿元件主动振动阻尼，该补偿元件抵消了向手柄的振动传递，并且根据能够传递给该手柄的振动并在其中和/或工具，从产生振动的位置到手柄的潜在振动传播路径产生补偿力和/或运动。

26. 发明授权

US08786012B2 Power semiconductor device and a method for forming a semiconductor device 失效
标题翻译：功率半导体器件和半导体器件的形成方法
公开(公告)号：US08786012B2
公开(公告)日：2014-07-22
申请号：US13542737
申请日：2012-07-06
申请人： Anton Mauder , Franz Hirler , Wolfgang Lehnert , Rudolf Berger , Klemens Pruegl , Hans-Joachim Schulze , Helmut Strack
发明人： Anton Mauder , Franz Hirler , Wolfgang Lehnert , Rudolf Berger , Klemens Pruegl , Hans-Joachim Schulze , Helmut Strack
IPC分类号： H01L29/66
CPC分类号： H01L21/28194 , H01L21/02109 , H01L21/02145 , H01L21/0228 , H01L29/0653 , H01L29/0878 , H01L29/1608 , H01L29/2003 , H01L29/402 , H01L29/407 , H01L29/408 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/51 , H01L29/513 , H01L29/66734 , H01L29/7393 , H01L29/7394 , H01L29/7397 , H01L29/7803 , H01L29/7811 , H01L29/7813 , H01L29/7835 , H01L29/792 , H01L29/8611
摘要： A power semiconductor device has a semiconductor body which includes an active area and a peripheral area which both define a horizontal main surface of the semiconductor body. The semiconductor body further includes an n-type semiconductor layer, a pn junction and at least one trench. The n-type semiconductor layer is embedded in the semiconductor body and extends to the main surface in the peripheral area. The pn junction is arranged between the n-type semiconductor layer and the main surface in the active area. The at least one trench extends in the peripheral area from the main surface into the n-type semiconductor layer and includes a dielectric layer with fixed negative charges. In the vertical direction, the dielectric layer is arranged both below and above the pn junction. The dielectric layer with fixed negative charges typically has a negative net charge. Further, a method for forming a semiconductor device is provided.
摘要翻译：功率半导体器件具有半导体本体，该半导体本体包括有源区域和限定半导体本体的水平主表面的周边区域。半导体本体还包括n型半导体层，pn结和至少一个沟槽。 n型半导体层嵌入半导体本体中并延伸到周边区域的主表面。 pn结布置在有源区域中的n型半导体层和主表面之间。至少一个沟槽在外围区域中从主表面延伸到n型半导体层中，并且包括具有固定的负电荷的电介质层。在垂直方向上，介电层布置在pn结的下方和上方。具有固定负电荷的电介质层通常具有负的净电荷。此外，提供了一种用于形成半导体器件的方法。

27. 发明授权

US08748974B2 Power semiconductor device and a method for forming a semiconductor device 有权
公开(公告)号：US08748974B2
公开(公告)日：2014-06-10
申请号：US13542737
申请日：2012-07-06
申请人： Anton Mauder , Franz Hirler , Wolfgang Lehnert , Rudolf Berger , Klemens Pruegl , Hans-Joachim Schulze , Helmut Strack
发明人： Anton Mauder , Franz Hirler , Wolfgang Lehnert , Rudolf Berger , Klemens Pruegl , Hans-Joachim Schulze , Helmut Strack
IPC分类号： H01L29/66
摘要： A power semiconductor device has a semiconductor body which includes an active area and a peripheral area which both define a horizontal main surface of the semiconductor body. The semiconductor body further includes an n-type semiconductor layer, a pn junction and at least one trench. The n-type semiconductor layer is embedded in the semiconductor body and extends to the main surface in the peripheral area. The pn junction is arranged between the n-type semiconductor layer and the main surface in the active area. The at least one trench extends in the peripheral area from the main surface into the n-type semiconductor layer and includes a dielectric layer with fixed negative charges. In the vertical direction, the dielectric layer is arranged both below and above the pn junction. The dielectric layer with fixed negative charges typically has a negative net charge. Further, a method for forming a semiconductor device is provided.

28. 发明申请

US20120286355A1 Power Semiconductor Device and a Method for Forming a Semiconductor Device 失效
标题翻译：功率半导体器件和形成半导体器件的方法
公开(公告)号：US20120286355A1
公开(公告)日：2012-11-15
申请号：US13542737
申请日：2012-07-06
申请人： Anton Mauder , Franz Hirler , Wolfgang Lehnert , Rudolf Berger , Klemens Pruegl , Hans-Joachim Schulze , Helmut Strack
发明人： Anton Mauder , Franz Hirler , Wolfgang Lehnert , Rudolf Berger , Klemens Pruegl , Hans-Joachim Schulze , Helmut Strack
IPC分类号： H01L29/78 , H01L21/302 , H01L29/02
CPC分类号： H01L21/28194 , H01L21/02109 , H01L21/02145 , H01L21/0228 , H01L29/0653 , H01L29/0878 , H01L29/1608 , H01L29/2003 , H01L29/402 , H01L29/407 , H01L29/408 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/51 , H01L29/513 , H01L29/66734 , H01L29/7393 , H01L29/7394 , H01L29/7397 , H01L29/7803 , H01L29/7811 , H01L29/7813 , H01L29/7835 , H01L29/792 , H01L29/8611
摘要： A power semiconductor device has a semiconductor body which includes an active area and a peripheral area which both define a horizontal main surface of the semiconductor body. The semiconductor body further includes an n-type semiconductor layer, a pn junction and at least one trench. The n-type semiconductor layer is embedded in the semiconductor body and extends to the main surface in the peripheral area. The pn junction is arranged between the n-type semiconductor layer and the main surface in the active area. The at least one trench extends in the peripheral area from the main surface into the n-type semiconductor layer and includes a dielectric layer with fixed negative charges. In the vertical direction, the dielectric layer is arranged both below and above the pn junction. The dielectric layer with fixed negative charges typically has a negative net charge. Further, a method for forming a semiconductor device is provided.
摘要翻译：功率半导体器件具有半导体本体，该半导体本体包括有源区域和限定半导体本体的水平主表面的周边区域。半导体本体还包括n型半导体层，pn结和至少一个沟槽。 n型半导体层嵌入半导体本体中并延伸到周边区域的主表面。 pn结布置在有源区域中的n型半导体层和主表面之间。至少一个沟槽在外围区域中从主表面延伸到n型半导体层中，并且包括具有固定的负电荷的电介质层。在垂直方向上，介电层布置在pn结的下方和上方。具有固定负电荷的电介质层通常具有负的净电荷。此外，提供了一种用于形成半导体器件的方法。

29. 发明授权

US08198678B2 Semiconductor device with improved on-resistance 有权
标题翻译：具有改善的导通电阻的半导体器件
公开(公告)号：US08198678B2
公开(公告)日：2012-06-12
申请号：US12633956
申请日：2009-12-09
申请人： Anton Mauder , Rudolf Berger , Franz Hirler , Ralf Siemieniec , Hans-Joachim Schulze
发明人： Anton Mauder , Rudolf Berger , Franz Hirler , Ralf Siemieniec , Hans-Joachim Schulze
IPC分类号： H01L29/78
CPC分类号： H01L29/66719 , H01L29/0878 , H01L29/407 , H01L29/408 , H01L29/42368 , H01L29/513 , H01L29/66734 , H01L29/7813
摘要： A semiconductor device includes a source, a drain, and a gate configured to selectively enable a current to pass between the source and the drain. The semiconductor device includes a drift zone between the source and the drain and a first field plate adjacent the drift zone. The semiconductor device includes a dielectric layer electrically isolating the first field plate from the drift zone and charges within the dielectric layer close to an interface of the dielectric layer adjacent the drift zone.
摘要翻译：半导体器件包括源极，漏极和被配置为选择性地使电流在源极和漏极之间通过的栅极。半导体器件包括源极和漏极之间的漂移区和邻近漂移区的第一场板。半导体器件包括将第一场板与漂移区电隔离的电介质层，并且电介质层内的电荷接近靠近漂移区的电介质层的界面。

30. 发明申请

US20120068240A1 Semiconductor Device and Method using a Sacrificial Layer 有权
标题翻译：使用牺牲层的半导体器件和方法
公开(公告)号：US20120068240A1
公开(公告)日：2012-03-22
申请号：US12884900
申请日：2010-09-17
申请人： Reinhard Goellner , Rudolf Berger
发明人： Reinhard Goellner , Rudolf Berger
IPC分类号： H01L29/788 , H01L21/336 , H01L21/283
CPC分类号： H01L29/7881 , H01L21/28273 , H01L27/11521 , H01L29/66825
摘要： A method of manufacturing a semiconductor device is disclosed. The method includes forming a first conductive layer over a substrate. The first conductive layer has a top surface and sidewalls, wherein the first conductive layer comprises an overhang of a non-conductive material along the sidewalls. The method further includes forming an insulating layer on the first conductive layer, and forming a sacrificial layer over the insulating layer and the overhang of the first conductive layer. The sacrificial layer is partially removed wherein a residue of the sacrificial layer remains beneath the overhang, and a second conductive layer is formed on the insulating layer.
摘要翻译：公开了制造半导体器件的方法。该方法包括在衬底上形成第一导电层。第一导电层具有顶表面和侧壁，其中第一导电层包括沿着侧壁的非导电材料的突出端。该方法还包括在第一导电层上形成绝缘层，并在第一导电层的绝缘层和突出端上形成牺牲层。牺牲层被部分去除，其中牺牲层的残余物保留在突出部分的下方，并且在绝缘层上形成第二导电层。

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