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21. 发明授权

US07935643B2 Stress management for tensile films 有权
标题翻译：拉伸薄膜的应力管理
公开(公告)号：US07935643B2
公开(公告)日：2011-05-03
申请号：US12604332
申请日：2009-10-22
申请人： Jingmei Liang , Anjana M. Patel , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Anjana M. Patel , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31608 , C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02362 , H01L21/3185 , H01L21/76829 , H01L21/76834 , H01L21/76837
摘要： The formation of a gap-filling silicon oxide layer with reduced tendency towards cracking is described. The deposition involves the formation of a flowable silicon-containing layer which facilitates the filling of trenches. Subsequent processing at high substrate temperature causes less cracking in the dielectric film than flowable films formed in accordance with methods in the prior art. A compressive liner layer deposited prior to the formation of the gap-filling silicon oxide layer is described and reduces the tendency for the subsequently deposited film to crack. A compressive capping layer deposited after a flowable silicon-containing layer has also been determined to reduce cracking. Compressive liner layers and compressive capping layers can be used alone or in combination to reduce and often eliminate cracking. Compressive capping layers in disclosed embodiments have additionally been determined to enable an underlying layer of silicon nitride to be transformed into a silicon oxide layer.
摘要翻译：描述了具有降低的开裂倾向的间隙填充氧化硅层的形成。沉积涉及形成有助于填充沟槽的可流动的含硅层。在基板温度高的情况下，与根据现有技术中的方法形成的可流动膜相比，电介质膜中的裂纹少。描述在形成间隙填充氧化硅层之前沉积的压缩衬垫层，并且降低随后沉积的膜破裂的倾向。在可流动的含硅层之后沉积的压缩覆盖层也被确定以减少开裂。压缩衬里层和压缩覆盖层可以单独使用或组合使用以减少并经常消除开裂。已经确定了所公开的实施例中的压缩覆盖层，以使氮化硅的下层能够转变成氧化硅层。

22. 发明申请

US20110081782A1 POST-PLANARIZATION DENSIFICATION 失效
公开(公告)号：US20110081782A1
公开(公告)日：2011-04-07
申请号：US12787791
申请日：2010-05-26
申请人： Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/3105
CPC分类号： H01L21/3105 , C23C16/345 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02337 , H01L21/31055 , H01L21/316 , H01L21/67207 , H01L21/76229
摘要： Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow and wide trenches/open areas become more similar following the treatment which allows the etch rates to match more closely. This effect may also be described as a reduction in the pattern loading effect. The process involves forming then planarizing silicon oxide. Planarization exposes a new dielectric interface disposed closer to the narrow trenches. The newly exposed interface facilitates a densification treatment by annealing and/or exposing the planarized surface to a plasma.

23. 发明授权

US09404178B2 Surface treatment and deposition for reduced outgassing 有权
标题翻译：表面处理和沉积减少排气
公开(公告)号：US09404178B2
公开(公告)日：2016-08-02
申请号：US13494341
申请日：2012-06-12
申请人： Jingmei Liang , Xiaolin Chen , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Xiaolin Chen , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： B05D3/04 , H05H1/24 , C23C16/40 , C23C16/455 , H01L21/02 , C23C16/34 , C23C16/452 , C23C16/505 , C23C16/56
CPC分类号： C23C16/401 , C23C16/345 , C23C16/452 , C23C16/45514 , C23C16/45565 , C23C16/505 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274
摘要： A method of forming a dielectric layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) layer by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing layer is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A silicon oxide capping layer may be formed from a portion of the carbon-free silicon-nitrogen-and-hydrogen-containing layer to avoid time-evolution of underlying layer properties prior to conversion into silicon oxide. Alternatively, the silicon oxide capping layer is formed over the silicon-nitrogen-and-hydrogen-containing layer. Either method of formation involves the formation of a local plasma within the substrate processing region.
摘要翻译：描述形成电介质层的方法。该方法首先通过自由基组分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）层。通过将自由基前体（在远程等离子体中激发）与未煅烧的无碳硅前体组合而形成含硅和氮的层。氧化硅覆盖层可以由一部分无碳硅 - 含氮和氢的层形成，以避免在转化成氧化硅之前下层性质的时间演变。或者，氧化硅覆盖层形成在含硅 - 氮和氢的层之上。任一种形成方法都涉及在衬底处理区域内形成局部等离子体。

24. 发明授权

US08741788B2 Formation of silicon oxide using non-carbon flowable CVD processes 有权
标题翻译：使用非碳流动CVD工艺形成氧化硅
公开(公告)号：US08741788B2
公开(公告)日：2014-06-03
申请号：US12840768
申请日：2010-07-21
申请人： Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/762
CPC分类号： H01L21/762 , C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02362 , H01L21/31608 , H01L21/3185 , H01L21/76837
摘要： A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-and-nitrogen containing precursor with a radical precursor, and depositing a silicon-and-nitrogen containing layer on a substrate. The silicon-and-nitrogen containing layer is then converted to the silicon oxide layer.
摘要翻译：描述形成氧化硅层的方法。该方法可以包括以下步骤：将含碳和氮的无碳前体与自由基前体混合，并在衬底上沉积含硅和氮的层。然后将含氮和氮的层转化为氧化硅层。

25. 发明授权

US08466067B2 Post-planarization densification 有权
标题翻译：后平面化致密化
公开(公告)号：US08466067B2
公开(公告)日：2013-06-18
申请号：US13043131
申请日：2011-03-08
申请人： Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/311
CPC分类号： H01L21/02164 , H01L21/02337 , H01L21/3105 , H01L21/31055 , H01L21/316 , H01L21/76229
摘要： Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow and wide trenches/open areas become more similar following the treatment which allows the etch rates to match more closely. This effect may also be described as a reduction in the pattern loading effect. The process involves forming then planarizing silicon oxide. Planarization exposes a new dielectric interface disposed closer to the narrow trenches. The newly exposed interface facilitates a densification treatment by annealing and/or exposing the planarized surface to a plasma.
摘要翻译：描述了在图案化衬底上形成高密度间隙填充氧化硅的工艺。这些工艺增加了间隙填充氧化硅的密度，特别是在狭窄的沟槽中。在宽的沟槽和凹入的开放区域中，密度也可以增加。狭缝和宽沟槽/开放区域中填充间隙的氧化硅的密度在处理之后变得更加相似，这允许蚀刻速率更紧密地匹配。这种效果也可以被描述为模式加载效应的降低。该方法涉及形成二氧化硅平坦化。平面化暴露出更靠近窄沟槽设置的新介质界面。新暴露的界面通过将平坦化表面退火和/或暴露于等离子体来促进致密化处理。

26. 发明申请

US20120003840A1 IN-SITU OZONE CURE FOR RADICAL-COMPONENT CVD 有权
标题翻译：用于放射性组分CVD的现场臭氧固化
公开(公告)号：US20120003840A1
公开(公告)日：2012-01-05
申请号：US12972711
申请日：2010-12-20
申请人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle , Shankar Venkataraman
发明人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/3105 , B82Y40/00
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/02164 , H01L21/022 , H01L21/02274 , H01L21/02326 , H01L21/02337 , H01L21/0234
摘要： Methods of forming a dielectric layer are described. The methods include the steps of mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer. Another silicon-and-nitrogen-containing layer may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may again be cured in ozone all without removing the substrate from the substrate processing region. After an integral multiple of dep-cure cycles, the conversion of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment.
摘要翻译：描述形成电介质层的方法。所述方法包括以下步骤：将含硅前体与等离子体流出物混合，并在基底上沉积含硅和氮的层。通过在用于沉积含硅和含氮层的相同基板处理区域中的含臭氧的气氛中固化，将含硅和含氮层转化为含硅和氧的层。可以在含硅和氧的层上沉积另外的含硅和含氮层，并且层叠层可以再次在臭氧中固化而不从衬底处理区移除衬底。在去固化循环的整数倍之后，可以在含氧环境中的较高温度下退火含硅和氧层层的转化。

27. 发明申请

US20110159703A1 DIELECTRIC FILM GROWTH WITH RADICALS PRODUCED USING FLEXIBLE NITROGEN/HYDROGEN RATIO 有权
标题翻译：使用灵活的氮气/氢气比率生产的放射线电介质膜生长
公开(公告)号：US20110159703A1
公开(公告)日：2011-06-30
申请号：US12969877
申请日：2010-12-16
申请人： Jingmei Liang , Xiaolin Chen , Matthew L. Miller , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Xiaolin Chen , Matthew L. Miller , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/31
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/0217 , H01L21/02274 , H01L21/02326 , H01L21/02337
摘要： Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H2) and nitrogen (N2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment.
摘要翻译：描述形成电介质层的方法。该方法可以包括以下步骤：将含硅前体与自由基 - 氮前体混合，并在基底上沉积电介质层。通过使氢（H 2）和氮（N 2）流入等离子体中，在远离等离子体中形成自由基 - 氮前体，以便调整氮/氢比。电介质层最初是含硅和氮的层，其可以通过在含氧环境中固化和/或退火该膜而转化为含硅和氧的层。

28. 发明申请

US20110159213A1 CHEMICAL VAPOR DEPOSITION IMPROVEMENTS THROUGH RADICAL-COMPONENT MODIFICATION 审中-公开
标题翻译：化学蒸气沉积通过辐射成分修饰改进
公开(公告)号：US20110159213A1
公开(公告)日：2011-06-30
申请号：US12905582
申请日：2010-10-15
申请人： Xiuyu Cai , Yue Zhao , Abhijit Basu Mallick , Nitin K. Ingle , Shankar Venkataraman
发明人： Xiuyu Cai , Yue Zhao , Abhijit Basu Mallick , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： C23C16/40 , C23C16/56 , C23C16/455 , C23C16/50
CPC分类号： C23C16/345 , C23C16/505 , C23C16/56
摘要： A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-containing precursor with a radical-nitrogen precursor, and depositing a silicon-and-nitrogen-containing layer on a substrate. The radical-nitrogen precursor is formed in a plasma by flowing ammonia and nitrogen (N2) and/or hydrogen (H2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film.
摘要翻译：描述形成氧化硅层的方法。该方法可以包括以下步骤：将无碳的含硅前体与自由基 - 氮前体混合，并在基底上沉积含硅和氮的层。通过将氨和氮（N 2）和/或氢（H 2）流入等离子体中以在等离子体中形成自由基 - 氮前体，以便调节氮/氢比。通过固化和退火膜可以将含硅和氮的层转化为含硅和氧的层。

29. 发明申请

US20100159711A1 PRECURSOR ADDITION TO SILICON OXIDE CVD FOR IMPROVED LOW TEMPERATURE GAPFILL 失效
标题翻译：用于改善低温胶粘剂的硅氧烷CVD的前驱物
公开(公告)号：US20100159711A1
公开(公告)日：2010-06-24
申请号：US12489234
申请日：2009-06-22
申请人： Shankar Venkataraman , Hiroshi Hamana , Manuel A. Hernandez , Nitin K. Ingle , Paul Edward Gee
发明人： Shankar Venkataraman , Hiroshi Hamana , Manuel A. Hernandez , Nitin K. Ingle , Paul Edward Gee
IPC分类号： H01L21/31 , H01L21/762
CPC分类号： H01L21/31612 , C23C16/401 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02222 , H01L21/02271 , H01L21/76224
摘要： Methods of depositing silicon oxide layers on substrates involve flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that a uniform silicon oxide growth rate is achieved across the substrate surface. The surface of silicon oxide layers grown according to embodiments may have a reduced roughness when grown with the additive precursor. In other aspects of the disclosure, silicon oxide layers are deposited on a patterned substrate with trenches on the surface by flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that the trenches are filled with a reduced quantity and/or size of voids within the silicon oxide filler material.
摘要翻译：在衬底上沉积氧化硅层的方法包括使含硅前体，氧化气体，水和添加剂前体流入处理室，使得在衬底表面上实现均匀的氧化硅生长速率。根据实施例生长的氧化硅层的表面可以在与添加剂前体一起生长时具有减小的粗糙度。在本公开的其他方面中，通过使含硅前体，氧化气体，水和添加剂前体流入处理室，将硅氧化物层沉积在具有表面上的沟槽的图案化衬底上，使得沟槽填充有氧化硅填充材料内的空隙的数量和/或尺寸减小。

30. 发明申请

US20050277257A1 Gap filling with a composite layer 失效
标题翻译：间隙填充复合层
公开(公告)号：US20050277257A1
公开(公告)日：2005-12-15
申请号：US10857829
申请日：2004-06-01
申请人： Jeong Byun , Zheng Yuan , Shankar Venkataraman , M. Karim , Thanh Pham , Ellie Yieh
发明人： Jeong Byun , Zheng Yuan , Shankar Venkataraman , M. Karim , Thanh Pham , Ellie Yieh
IPC分类号： H01L21/76 , H01L21/762
CPC分类号： H01L21/76224
摘要： A method of filling a gap formed between adjacent raised surfaces on a substrate. In one embodiment the method comprises depositing a boron-doped silica glass (BSG) layer over the substrate to partially fill the gap using a thermal CVD process; exposing the BSG layer to a steam ambient at a temperature above the BSG layer's Eutectic temperature; removing an upper portion of the BSG layer by exposing the layer to a fluorine-containing etchant; and depositing an undoped silica glass (USG) layer over the BSG layer to fill the remainder of the gap.
摘要翻译：填充在基板上相邻的凸起表面之间形成的间隙的方法。在一个实施例中，该方法包括在衬底上沉积硼掺杂石英玻璃（BSG）层，以使用热CVD工艺部分填充间隙; 在高于BSG层的共晶温度的温度下将BSG层暴露于蒸汽环境; 通过将层暴露于含氟蚀刻剂来除去BSG层的上部; 以及在BSG层上沉积未掺杂的二氧化硅玻璃（USG）层以填补间隙的剩余部分。

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