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21. 发明授权

US08896317B2 Lighting unit with compensation for output frequency, and method for determining output frequency 有权
标题翻译：输出频率补偿的照明单元，输出频率的确定方法
公开(公告)号：US08896317B2
公开(公告)日：2014-11-25
申请号：US12867218
申请日：2009-02-09
申请人： Radu Surdeanu , Viet Nguyen Hoang , Benoit Bataillou , Pascal Bancken , David Van Steenwinckel
发明人： Radu Surdeanu , Viet Nguyen Hoang , Benoit Bataillou , Pascal Bancken , David Van Steenwinckel
IPC分类号： G01R31/02 , H05B33/08
CPC分类号： H05B33/0866
摘要： A method of determining the dominant output wavelength of an LED, includes determining an electrical characteristic of the LED which is dependent on the voltage-capacitance characteristics, and analyzing the characteristic to determine the dominant output wavelength.
摘要翻译：确定LED的主要输出波长的方法包括确定取决于电压 - 电容特性的LED的电特性，以及分析该特性以确定主要输出波长。

22. 发明授权

US08376801B2 Luminescent component and manufacturing method 有权
标题翻译：发光元件及制造方法
公开(公告)号：US08376801B2
公开(公告)日：2013-02-19
申请号：US12922127
申请日：2009-03-09
申请人： Viet Nguyen Hoang , Radu Surdeanu , Benoit Bataillou
发明人： Viet Nguyen Hoang , Radu Surdeanu , Benoit Bataillou
IPC分类号： H01J9/24
CPC分类号： H05B33/10 , Y10T428/24298 , Y10T428/24331
摘要： The present invention relates to a luminescent component (30) and a manufacturing method thereof. The luminescent component (30) comprises a first transparent carrier (18), a second transparent carrier (24), a substrate (10) sandwiched between said transparent carriers (18; 24), the substrate (10) comprising a conduit from the first transparent layer (18) to the second transparent carrier (24), the conduit being filled with a luminescent solution (20). This facilitates the use of colloidal solutions of quantum dots in such a luminescent component (30). Preferably, the substrate (10) is direct bonded to the transparent carriers (18, 24) using direct wafer bonding techniques.
摘要翻译：本发明涉及发光成分（30）及其制造方法。发光组件（30）包括第一透明载体（18），第二透明载体（24），夹在所述透明载体（18; 24）之间的基底（10），所述基底（10）透明层（18）连接到第二透明载体（24），导管填充有发光溶液（20）。这有助于在这种发光组分（30）中使用量子点的胶体溶液。优选地，使用直接晶片接合技术将衬底（10）直接接合到透明载体（18,24）。

23. 发明申请

US20120202299A1 ILLUMINATION DETECTION SYSTEM AND METHOD 审中-公开
标题翻译：照明检测系统和方法
公开(公告)号：US20120202299A1
公开(公告)日：2012-08-09
申请号：US13379508
申请日：2010-07-02
申请人： Damien Lenoble , Radu Surdeanu
发明人： Damien Lenoble , Radu Surdeanu
IPC分类号： G01N21/64
CPC分类号： G01N21/6408 , G01N21/645 , H01L31/103
摘要： An optical analysis apparatus and method in which a detector provides two different signals, based on responses to incident light absorbed within the detector over different depths. These signals are processed to discriminate between incident light of two different frequencies and thereby determine the intensity of the light of one desired frequency.
摘要翻译：一种光学分析装置和方法，其中检测器基于对不同深度处的检测器内吸收的入射光的响应，提供两个不同的信号。处理这些信号以区分两个不同频率的入射光，从而确定一个期望频率的光的强度。

24. 发明申请

US20120105311A1 Display Device 有权
标题翻译：显示设备
公开(公告)号：US20120105311A1
公开(公告)日：2012-05-03
申请号：US13056116
申请日：2009-07-27
申请人： Benoit Bataillou , Radu Surdeanu , Pascal Bancken , David van Steenwinckel , Viet Nguyen Hoang
发明人： Benoit Bataillou , Radu Surdeanu , Pascal Bancken , David van Steenwinckel , Viet Nguyen Hoang
IPC分类号： G09G3/00
CPC分类号： G02F1/19 , G02F1/0147 , G02F1/23 , G02F2203/10 , G09G2300/00
摘要： A display device comprises a substrate which carries an array of pixels. Each pixel comprises an array of apertures in the substrate, each aperture of the array having a maximum opening dimension less than the wavelength of the light to be transmitted through the aperture. The effective dielectric constant of the aperture and/or the dielectric constant of the substrate is varied, thereby to vary the light transmission characteristics of the pixel between transmission of at least one frequency in the visible spectrum and transmission of substantially no frequency in the visible spectrum.
摘要翻译：显示装置包括承载像素阵列的基板。每个像素包括衬底中的孔阵列，阵列的每个孔具有小于要透过孔的光的波长的最大开口尺寸。孔的有效介电常数和/或介质的介电常数发生变化，从而改变可见光谱中的至少一个频率的透射之间像素的透光特性以及可见光谱中基本上没有频率的透射。

25. 发明申请

US20110012158A1 MANUFACTURING METHOD AND INTEGRATED CIRCUIT HAVING A LIGHT PATH TO A PIXILATED ELEMENT 有权
标题翻译：制造方法和集成电路有一个光线路到一个被粉碎的元素
公开(公告)号：US20110012158A1
公开(公告)日：2011-01-20
申请号：US12922072
申请日：2009-03-09
申请人： Viet Nguyen Hoang , Radu Surdeanu , Benoit Bataillou
发明人： Viet Nguyen Hoang , Radu Surdeanu , Benoit Bataillou
IPC分类号： H01L33/58 , H01L31/18 , H01L31/0232 , H01L33/00
CPC分类号： H01L27/14625 , H01L27/14621 , H01L27/14636 , H01L27/14685
摘要： The present invention relates to a manufacturing method of an integrated circuit (IC) comprising a substrate (10) comprising a pixelated element (12) and a light path (38) to the pixelated element (12). The IC comprises a first dielectric layer (14) covering the substrate (10) but not the pixilated element (12), a first metal layer (16) covering a part of the first dielectric layer (14), a second dielectric layer (18) covering a further part of first dielectric layer (14), a second metal layer (20) covering a part of the second dielectric layer (18) and extending over the pixelated element (12) and a part of the first metal layer (16), the first metal layer (16) and the second metal layer (20) forming an air-filled light path (38) to the pixelated element (12). The air-filled light path (38) is formed by creation of holes in the first dielectric layer (14) and the second dielectric layer (18), filling the holes with sacrificial materials, and removal of the sacrificial materials after deposition and patterning of the second metal layer (20). This yields an IC having a low-loss light path to the pixelated element (12). The light path may act as a color filter, e.g. a Fabry-Perot color filter.
摘要翻译：本发明涉及一种集成电路（IC）的制造方法，该集成电路（IC）包括基板（10），该基板（10）包括像素化元件（12）和到像素化元件（12）的光路（38）。所述IC包括覆盖所述衬底（10）而不是所述像素化元件（12）的第一介电层（14），覆盖所述第一介电层（14）的一部分的第一金属层（16），第二介电层（18））覆盖第一介电层（14）的另一部分，覆盖第二介电层（18）的一部分并在像素化元件（12）上延伸的第二金属层（20）和第一金属层（16）的一部分），第一金属层（16）和第二金属层（20）形成到像素化元件（12）的充气光路（38）。充气光路（38）通过在第一电介质层（14）和第二电介质层（18）中产生孔而形成，用牺牲材料填充孔，并且在沉积和图案化之后去除牺牲材料第二金属层（20）。这产生具有到像素化元件（12）的低损耗光路的IC。光路可以用作滤色器，例如，法布里 - 珀罗滤镜。

26. 发明申请

US20100308833A1 LIGHTING UNIT WITH COMPENSATION FOR OUTPUT FREQUENCY, AND METHOD FOR DETERMINING OUTPUT FREQUENCY 有权
标题翻译：具有输出频率补偿的照明单元，以及用于确定输出频率的方法
公开(公告)号：US20100308833A1
公开(公告)日：2010-12-09
申请号：US12867218
申请日：2009-02-09
申请人： Radu Surdeanu , Viet Nguyen Hoang , Benoit Bataillou , Pascal Bancken , David Van Steenwinckel
发明人： Radu Surdeanu , Viet Nguyen Hoang , Benoit Bataillou , Pascal Bancken , David Van Steenwinckel
IPC分类号： G01R31/44 , H05B37/02 , G09G5/10
CPC分类号： H05B33/0866
摘要： A method of determining the dominant output wavelength of an LED, comprises determining an electrical characteristic of the LED which is dependent on the voltage-capacitance characteristics, and analysing the characteristic to determine the dominant output wavelength.
摘要翻译：确定LED的主要输出波长的方法包括确定取决于电压 - 电容特性的LED的电特性，以及分析该特性以确定主要输出波长。

27. 发明授权

US07839209B2 Tunnel field effect transistor 有权
标题翻译：隧道场效应晶体管
公开(公告)号：US07839209B2
公开(公告)日：2010-11-23
申请号：US12444140
申请日：2007-10-03
申请人： Gilberto Curatola , Prabhat Agarwal , Jan W. Slotboom , Godefridus A. M. Hurkx , Radu Surdeanu , Gerben Doornbos
发明人： Gilberto Curatola , Prabhat Agarwal , Jan W. Slotboom , Godefridus A. M. Hurkx , Radu Surdeanu , Gerben Doornbos
IPC分类号： H01L25/00
CPC分类号： H01L29/161 , H01L29/165 , H01L29/7391
摘要： A tunnel transistor includes source diffusion (4) of opposite conductivity type to a drain diffusion (6) so that a depletion layer is formed between source and drain diffusions in a lower doped region (8). An insulated gate (16) controls the position and thickness of the depletion layer. The device includes a quantum well formed in accumulation layer (20) which is made of a different material to the lower layer (2) and cap layer (22).
摘要翻译：隧道晶体管包括与漏扩散（6）相反的导电类型的源极扩散（4），使得在较低掺杂区域（8）中的源极和漏极扩散之间形成耗尽层。绝缘栅极（16）控制耗尽层的位置和厚度。该装置包括形成在由下层（2）和盖层（22）的不同材料制成的聚集层（20）中的量子阱。

28. 发明申请

US20100097135A1 TUNNEL FIELD EFFECT TRANSISTOR 有权
标题翻译：隧道场效应晶体管
公开(公告)号：US20100097135A1
公开(公告)日：2010-04-22
申请号：US12444140
申请日：2007-10-03
申请人： Gilberto Curatola , Prabhat Agarwal , Jan W. Slotboom , Godefridus A.M. Hurkx , Radu Surdeanu
发明人： Gilberto Curatola , Prabhat Agarwal , Jan W. Slotboom , Godefridus A.M. Hurkx , Radu Surdeanu
IPC分类号： H03K3/353 , H01L29/78
CPC分类号： H01L29/161 , H01L29/165 , H01L29/7391
摘要： A tunnel transistor includes source diffusion (4) of opposite conductivity type to a drain diffusion (6) so that a depletion layer is formed between source and drain diffusions in a lower doped region (8). An insulated gate (16) controls the position and thickness of the depletion layer. The device includes a quantum well formed in accumulation layer (20) which is made of a different material to the lower layer (2) and cap layer (22).
摘要翻译：隧道晶体管包括与漏扩散（6）相反的导电类型的源极扩散（4），使得在较低掺杂区域（8）中的源极和漏极扩散之间形成耗尽层。绝缘栅极（16）控制耗尽层的位置和厚度。该装置包括形成在由下层（2）和盖层（22）的不同材料制成的聚集层（20）中的量子阱。

29. 发明申请

US20070166922A1 Method of fabrication a double gate field effect transistor device and such a double gate field transistor device 有权
标题翻译：制造双栅场效应晶体管器件和这种双栅极场效应晶体管器件的方法
公开(公告)号：US20070166922A1
公开(公告)日：2007-07-19
申请号：US10570478
申请日：2004-08-12
申请人： Radu Surdeanu , Youri Ponomarev
发明人： Radu Surdeanu , Youri Ponomarev
IPC分类号： H01L21/336
CPC分类号： H01L29/66742 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L29/78648
摘要： The present invention discloses a method of forming a double gate field effect transistor device, and such a device formed with the method. One starts with a semiconductor-on-insulator substrate, and forms a first gate, source, drain and extensions, and prepares the second gate. Then the substrate is bonded to a second carrier, exposing a second side of the semiconductor layer. Next, an annealing step is performed as a diffusionless annealing, which has the advantage that the semiconductor layer not only has a substantially even thickness, but also has a substantially flat surface. This ensures the best possible annealing action of said annealing step. Very sharp abruptness of the extensions is achieved, with very high activation of the dopants.
摘要翻译：本发明公开了一种形成双栅场效应晶体管器件的方法，以及用该方法形成的器件。一个从绝缘体上半导体衬底开始，并形成第一个栅极，源极，漏极和延伸部分，并准备第二个栅极。然后将衬底接合到第二载体，暴露半导体层的第二侧。接下来，进行退火步骤作为无扩散退火，其优点是半导体层不仅具有基本上均匀的厚度，而且具有基本平坦的表面。这确保了所述退火步骤的最佳退火作用。通过非常高的掺杂剂活化，实现了延伸部的非常尖锐的突然性。

30. 发明授权

US09081251B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US09081251B2
公开(公告)日：2015-07-14
申请号：US13056116
申请日：2009-07-27
申请人： Benoit Bataillou , Radu Surdeanu , Pascal Bancken , David van Steenwinckel , Viet Nguyen Hoang
发明人： Benoit Bataillou , Radu Surdeanu , Pascal Bancken , David van Steenwinckel , Viet Nguyen Hoang
IPC分类号： G02F1/19 , G02F1/23
CPC分类号： G02F1/19 , G02F1/0147 , G02F1/23 , G02F2203/10 , G09G2300/00
摘要： A display device comprises a substrate which carries an array of pixels. Each pixel comprises an array of apertures in the substrate, each aperture of the array having a maximum opening dimension less than the wavelength of the light to be transmitted through the aperture. The effective dielectric constant of the aperture and/or the dielectric constant of the substrate is varied, thereby to vary the light transmission characteristics of the pixel between transmission of at least one frequency in the visible spectrum and transmission of substantially no frequency in the visible spectrum.
摘要翻译：显示装置包括承载像素阵列的基板。每个像素包括衬底中的孔阵列，阵列的每个孔具有小于要透过孔的光的波长的最大开口尺寸。孔的有效介电常数和/或介质的介电常数发生变化，从而改变可见光谱中的至少一个频率的透射之间像素的透光特性以及可见光谱中基本上没有频率的透射。

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