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21. 发明授权

US06844225B2 Self-aligned mask formed utilizing differential oxidation rates of materials 失效
标题翻译：使用材料的不同氧化速率形成的自对准掩模
公开(公告)号：US06844225B2
公开(公告)日：2005-01-18
申请号：US10345469
申请日：2003-01-15
申请人： Huajie Chen , Kathryn T. Schonenberg , Gregory G. Freeman , Andreas D. Stricker , Jae-Sung Rieh
发明人： Huajie Chen , Kathryn T. Schonenberg , Gregory G. Freeman , Andreas D. Stricker , Jae-Sung Rieh
IPC分类号： H01L21/321 , H01L21/331 , H01L29/732 , H01L29/737 , H01L21/00
CPC分类号： H01L29/66242 , H01L21/32105 , Y10S438/911
摘要： A self-aligned oxide mask is formed utilizing differential oxidation rates of different materials. The self-aligned oxide mask is formed on a CVD grown base NPN base layer which compromises single crystal Si (or Si/SiGe) at active area and polycrystal Si (or Si/SiGe) on the field. The self-aligned mask is fabricated by taking advantage of the fact that poly Si (or Si/SiGe) oxidizes faster than single crystal Si (or Si/SiGe). An oxide film is formed over both the poly Si (or Si/siGe) and the single crystal Si (or Si/siGe) by using an thermal oxidation process to form a thick oxidation layer over the poly Si (or Si/siGe) and a thin oxidation layer over the single crystal Si (or Si/siGe), followed by a controlled oxide etch to remove the thin oxidation layer over the single crystal Si (or Si/siGe) while leaving the self-aligned oxide mask layer over the poly Si (or Si/siGe). A raised extrinsic base is then formed following the self-aligned mask formation. This self-aligned oxide mask blocks B diffusion from the raised extrinsic base to the corner of collector.
摘要翻译：使用不同材料的不同氧化速率形成自对准氧化物掩模。自对准氧化物掩模形成在CVD生长的基底NPN基层上，其牺牲了场上的活性区域上的单晶Si（或Si / SiGe）和多晶Si（或Si / SiGe）。通过利用多晶硅（或Si / SiGe）比单晶Si（或Si / SiGe）更快地氧化的事实来制造自对准掩模。通过使用热氧化工艺在多晶硅（或Si / siGe）和单晶Si（或Si / siGe）上形成氧化膜，以在多晶硅（或Si / SiGe）上形成厚的氧化层，以及在单晶Si（或Si / siGe）上方的薄氧化层，随后进行受控氧化物蚀刻以除去单晶Si（或Si / siGe）上的薄氧化层，同时将自对准氧化物掩模层留在多晶硅（或Si / siGe）。然后在自对准掩模形成之后形成隆起的外在基体。该自对准氧化物掩模阻挡从扩展的外在碱基到收集器角的扩散。

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