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21. 发明授权

US07061731B2 High magnetic anisotropy hard magnetic bias element 有权
标题翻译：高磁各向异性硬磁偏置元件
公开(公告)号：US07061731B2
公开(公告)日：2006-06-13
申请号：US10715149
申请日：2003-11-17
申请人： David J. Larson , Eric W. Singleton , Declan Macken , Patrick J. Moran
发明人： David J. Larson , Eric W. Singleton , Declan Macken , Patrick J. Moran
IPC分类号： G11B5/127
CPC分类号： G11B5/493
摘要： A magnetoresistive sensor having an MR stack biased by high anisotropy hard bias elements thereby reducing distortion in sensor operation and improving head to head operational values. The high anisotropy hard bias elements are formed from a hard magnetic material deposited in a thin film having a substantially axial preferred direction of magnetic anisotropy prior to application of a setting field. The magnetic anisotropy in the hard magnetic material is formed by oblique deposition in a direction approximately normal to the preferred direction of anisotropy in the resulting hard bias element.
摘要翻译：磁阻传感器具有由高各向异性硬偏置元件偏置的MR堆叠，从而减少传感器操作中的失真并改善头对头操作值。高度各向异性的硬偏压元件由在施加设定场之前具有基本轴向优选的磁各向异性方向的薄膜中沉积的硬磁性材料形成。硬磁性材料中的磁各向异性通过在所得硬偏置元件的大致垂直于各向异性优选方向的方向上的倾斜沉积形成。

22. 发明授权

US07035061B2 Magnetoresistive transducer with low magnetic moment, high coercivity stabilizing magnets 有权
标题翻译：具有低磁矩，高矫顽力稳定磁体的磁阻换能器
公开(公告)号：US07035061B2
公开(公告)日：2006-04-25
申请号：US10464343
申请日：2003-06-18
申请人： Eric W. Singleton , David J. Larson , Christopher L. Platt , Kurt W. Wierman , James K. Howard
发明人： Eric W. Singleton , David J. Larson , Christopher L. Platt , Kurt W. Wierman , James K. Howard
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , C21D1/04 , G11B5/313 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B2005/3996
摘要： A transducing head includes a first bias element, a second bias element, and a magnetoresistive sensor positioned between the first bias element and the second bias element. The first bias element and the second bias element are each formed of a permanent magnet material having a remanent magnetic moment in a range of about 200 to about 800 emu/cm3. In a preferred embodiment, the permanent magnet material is an alloy comprising iron, platinum, and at least one material selected from copper, silver, magnesium, lead, zinc, bismuth, and antimony.
摘要翻译：转换头包括位于第一偏置元件和第二偏置元件之间的第一偏置元件，第二偏置元件和磁阻传感器。第一偏置元件和第二偏置元件各自由具有约200至约800emu / cm 3范围内的剩余磁矩的永磁体材料形成。在优选实施例中，永久磁铁材料是包括铁，铂和至少一种选自铜，银，镁，铅，锌，铋和锑的材料的合金。

23. 发明授权

US08659854B2 Magnetoresistive shield with stabilizing feature 有权
标题翻译：具有稳定功能的磁阻屏蔽
公开(公告)号：US08659854B2
公开(公告)日：2014-02-25
申请号：US13102663
申请日：2011-05-06
申请人： Eric W. Singleton , Junjie Quan , Jae-Young Yi , Shaun E. McKinlay
发明人： Eric W. Singleton , Junjie Quan , Jae-Young Yi , Shaun E. McKinlay
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3932 , G11B5/398 , H01F10/123 , H01F10/3272
摘要： A magnetoresistive (MR) reader is adjacent to at least one shield that extends from an air bearing surface (ABS) a first distance. The shield has a stabilizing feature that is contactingly adjacent the MR reader and extends from the ABS a second distance that is less than the first distance.
摘要翻译：磁阻（MR）读取器与至少一个从空气轴承表面（ABS）延伸第一距离的屏蔽体相邻。屏蔽件具有与MR读取器接触地相邻的稳定特征，并从ABS延伸小于第一距离的第二距离。

24. 发明申请

US20120280774A1 Magnetoresistive Shield with Lateral Sub-Magnets 有权
标题翻译：具有侧向磁铁的磁阻屏蔽
公开(公告)号：US20120280774A1
公开(公告)日：2012-11-08
申请号：US13102751
申请日：2011-05-06
申请人： Eric W. Singleton , Junjie Quan , Jae-Young Yi
发明人： Eric W. Singleton , Junjie Quan , Jae-Young Yi
IPC分类号： H01F7/02 , H01F1/00
CPC分类号： G11B5/3912 , G11B5/398 , H01F10/123 , H01F10/3254
摘要： A magnetic shield for a magnetoresistive (MR) reader has one or more lateral hard magnets and a ferromagnetic shielding layer with at least one hard sub-magnet in a lateral notch in the shielding layer. The notch allows the shielding layer to contact the sub-magnet on surfaces along multiple normal planes.
摘要翻译：用于磁阻（MR）读取器的磁屏蔽件具有一个或多个横向硬磁体和在屏蔽层中的横向凹口中具有至少一个硬副磁体的铁磁屏蔽层。凹口允许屏蔽层沿着多个正平面接触表面上的子磁体。

25. 发明授权

US07719802B2 Magnetic sensor with electrically defined active area dimensions 有权
标题翻译：具有电气限定有源面积尺寸的磁性传感器
公开(公告)号：US07719802B2
公开(公告)日：2010-05-18
申请号：US10668437
申请日：2003-09-23
申请人： Michael C. Kautzky , David J. Larson , Bradley H. Miller , Eric W. Singleton , Dimitar V. Dimitrov , Eric L. Granstrom , Song S. Xue
发明人： Michael C. Kautzky , David J. Larson , Bradley H. Miller , Eric W. Singleton , Dimitar V. Dimitrov , Eric L. Granstrom , Song S. Xue
IPC分类号： G11B5/33
CPC分类号： G11B5/3903 , G11B5/3909 , G11B2005/0018
摘要： A magnetic sensor having adjustable electrical dimensions, such as electrical read width and electrical stripe height, is disclosed. The magnetic sensor includes a sensor stack with one or more bias electrodes positioned with respect to the sensor stack. The electrical width or electrical stripe height of the sensor stack is a function of a voltage applied to the bias electrodes. The electric field produced by the bias electrodes alters the electrical profile of the magnetoresistive device.
摘要翻译：公开了一种具有可调整的电气尺寸的磁传感器，例如电读宽度和电条高度。磁传感器包括传感器堆叠，其具有相对于传感器堆叠定位的一个或多个偏置电极。传感器堆叠的电气宽度或电气条纹高度是施加到偏置电极的电压的函数。由偏置电极产生的电场改变磁阻器件的电气轮廓。

26. 发明授权

US06795279B2 Spin valve structures with specular reflection layers 有权
公开(公告)号：US06795279B2
公开(公告)日：2004-09-21
申请号：US10754317
申请日：2004-01-09
申请人： Eric W. Singleton , Kristin Joy Duxstad , Michael B. Hintz
发明人： Eric W. Singleton , Kristin Joy Duxstad , Michael B. Hintz
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3903 , H01F10/3268 , H01F10/3272
摘要： This invention presents a method and structure for magnetic spin valves. The spin valve structure includes a first ferromagnetic layer separated from a second ferromagnetic layer by a non-magnetic layer. The spin valve structure also includes a first specular scattering layer separated from a second specular scattering layer by the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer. The first ferromagnetic layer can include a free layer and the non-magnetic layer can include a spacer layer. The second ferromagnetic layer can include a pinned layer or a reference layer. The specular scattering layers can include a material such as Y2O3, HfO2, MgO, Al2O3, NiO, Fe2O3, and Fe3O4. The specular scattering layers can also be used in a SAF structure. In the SAF structure, the antiferromagnetic coupling material can be co-deposited with the second specular scattering layer.

27. 发明授权

US06700753B2 Spin valve structures with specular reflection layers 有权
标题翻译：具有镜面反射层的旋转阀结构
公开(公告)号：US06700753B2
公开(公告)日：2004-03-02
申请号：US09835131
申请日：2001-04-12
申请人： Eric W. Singleton , Kristin Joy Duxstad , Michael B. Hintz
发明人： Eric W. Singleton , Kristin Joy Duxstad , Michael B. Hintz
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3903 , H01F10/3268 , H01F10/3272
摘要： This invention presents a method and structure for magnetic spin valves. The spin valve structure includes a first ferromagnetic layer separated from a second ferromagnetic layer by a non-magnetic layer. The spin valve structure also includes a first specular scattering layer separated from a second specular scattering layer by the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer. The first ferromagnetic layer can include a free layer and the non-magnetic layer can include a spacer layer. The second ferromagnetic layer can include a pinned layer or a reference layer. The specular scattering layers can include a material such as Y2O3, HfO2, MgO, Al2O3, NiO, Fe2O3, and Fe3O4. The specular scattering layers can also be used in a SAF structure. In the SAF structure, the antiferromagnetic coupling material can be co-deposited with the second specular scattering layer.
摘要翻译：本发明提出了一种磁旋转阀的方法和结构。自旋阀结构包括通过非磁性层与第二铁磁层分离的第一铁磁层。自旋阀结构还包括通过第一铁磁层，非磁性层和第二铁磁层与第二镜面散射层分离的第一镜面散射层。第一铁磁层可以包括自由层，非磁性层可以包括间隔层。第二铁磁层可以包括钉扎层或参考层。镜面散射层可以包括诸如Y 2 O 3，HfO 2，MgO，Al 2 O 3，NiO，Fe 2 O 3和Fe 3 O 4的材料。镜面散射层也可以用于SAF结构。在SAF结构中，反铁磁耦合材料可以与第二镜面散射层共沉积。

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