会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 22. 发明公开
    • LUMINESZENZDIODENCHIP AUF DER BASIS VON GAN UND VERFAHREN ZUM HERSTELLEN EINES LUMINESZENDIODENBAUELEMENTS
    • EP1277241A1
    • 2003-01-22
    • EP01931364.2
    • 2001-03-16
    • Osram Opto Semiconductors GmbH
    • BADER, StefanHAHN, BertholdHÄRLE, VolkerLUGAUER, Hans-JürgenMUNDBROD-VANGEROW, Manfred
    • H01L33/00
    • H01L33/0079H01L33/10H01L33/145H01L33/32H01L33/40H01L33/405H01L33/60H01L33/62H01L2224/32245H01L2224/48247H01L2224/48472H01L2224/73265H01L2924/181H01L2224/48091H01L2924/00014H01L2924/00H01L2924/00012
    • The invention relates to a light-emitting diode chip comprising an electrically conductive substrate that is permeable to radiation. In said chip, the sequence of epitaxial layers (3) is covered, on substantially the whole surface of its p-doped side (9) that faces away from the substrate (2), with a reflective, bondable p-contact layer (6). On the substrate (2), the principal surface (10) facing away from the sequence of epitaxial layers (3) is provided with a metallic contact (7) that covers only part of said principal surface (10) and light is coupled out of the chip (1) via the exposed area on the principal surface (10) of the substrate (2) and via the sides of said chip (14). An additional light-emitting diode chip comprises exclusively epitaxial layers. The p-conductive epitaxial layer (5) is covered on substantially the whole of its principal surface (9) facing away from the n-conductive epitaxial layer (4), with a reflective, bondable p-contact layer (6) and on the n-conductive epitaxial layer (4), the principal surface (8) facing away from the p-conductive epitaxial layer (5) is provided with an n-contact layer (7) that covers only part of said principal surface. Light is coupled out of this chip (1) via the exposed area on the principal surface (8) of the n-conductive epitaxial layer (4) and via the sides of said chip (14).
    • 发光二极管芯片技术领域本发明涉及一种发光二极管芯片,其包括可透过辐射的导电基板。 在所述芯片中,外延层(3)的序列基本上在其背离衬底(2)的p掺杂侧(9)的整个表面上被反射性可结合p接触层(6 )。 在衬底(2)上,远离外延层(3)的序列的主表面(10)设置有仅覆盖所述主表面(10)的一部分的金属接触件(7),并且光被耦合出 芯片(1)经由衬底(2)的主表面(10)上的暴露区域并经由所述芯片(14)的侧面。 另外的发光二极管芯片包括专门的外延层。 p-导电外延层(5)基本上在其背离n导电外延层(4)的整个主表面(9)上被覆盖,具有可反射的可结合的p-接触层(6) n导电外延层(4)中,远离p导电外延层(5)的主表面(8)设置有仅覆盖所述主表面的一部分的n接触层(7)。 光通过n导电外延层(4)的主表面(8)上的暴露区域并经由所述芯片(14)的侧面耦合出该芯片(1)。