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21. 发明专利

DE3336281C2 未知
公开(公告)号：DE3336281C2
公开(公告)日：1995-04-20
申请号：DE3336281
申请日：1983-10-05
申请人： MIKOSHIBA NOBUO , TSUBOCHI KAZUO
发明人： MIKOSHIBA NOBUO , TSUBOUCHI KAZUO , SUGAI KAZUYOSHI
IPC分类号： H03H9/145 , H03H3/08 , H03H9/02 , H03H9/25 , H03H9/42 , H03H3/10
摘要： An acoustic surface wave device includes a substrate made of an elastic material, a multilayer structure disposed on a surface of the substrate and having a silicon dioxide layer and an aluminum nitride layer superimposed on each other, and electrodes having predetermined configurations formed on the multilayer structure. The main component of the elastic material is a silicon monocrystal, whose temperature coefficient of delay time for acoustic surface waves is positive, and the piezo-electric axis of the aluminum nitride is either perpendicular or parallel to the surface of the substrate, with a negative delay coefficient, counteracting that of the substrate.

22. 发明专利

GB2243948B Integrated circuit 未知
公开(公告)号：GB2243948B
公开(公告)日：1994-06-08
申请号：GB9021721
申请日：1990-10-05
申请人： MIKOSHIBA NOBUO , TSUBOCHI KAZUO , MASU KAZUYA
发明人： MIKOSHIBA NOBUO , TSUBOUCHI KAZUO , MASU KAZUYA
IPC分类号： H01L27/088 , H01L29/49 , H01L29/784

23. 发明专利

GB2251534B SPREAD-SPECTRUM COMMUNICATION APPARATUS 未知
公开(公告)号：GB2251534B
公开(公告)日：1992-09-23
申请号：GB9204144
申请日：1992-02-26
申请人： MIKOSHIBA NOBUO , TSUBOCHI KAZUO
发明人： MIKOSHIBA NOBUO , TSUBOUCHI KAZUO , TOMIOKA TAKESHI
IPC分类号： H04B1/707 , H04B1/66

24. 发明专利

GB2251533B SPREAD-SPECTRUM COMMUNICATION APPARATUS 未知
公开(公告)号：GB2251533B
公开(公告)日：1992-09-23
申请号：GB9204143
申请日：1992-02-26
申请人： MIKOSHIBA NOBUO , TSUBOCHI KAZUO
发明人： MIKOSHIBA NOBUO , TSUBOUCHI KAZUO , TOMIOKA TAKESHI
IPC分类号： H04B1/707 , H04B1/66

25. 发明专利

GB2251533A Spread-spectrum communication apparatus 未知
公开(公告)号：GB2251533A
公开(公告)日：1992-07-08
申请号：GB9204143
申请日：1992-02-26
申请人： MIKOSHIBA NOBUO , TSUBOCHI KAZUO
发明人： MIKOSHIBA NOBUO , TSUBOUCHI KAZUO , TOMIOKA TAKESHI
IPC分类号： H04B1/707
摘要： In a spread-spectrum communication apparatus using a convolver 13 as a correlator, demodulating processes in a receiver apparatus using a carrier and a PN code are performed under a non-synchronous condition. Binary data is converted to FSK form, and multiplicatively combined with a biphase coded PN sequence at one of two frequencies. At the receiver, correlation spikes are produced when the waveform derived from the above one frequency is received. The spikes are processed by a pulse count demodulator 35 or by width expansion (Fig. 1B). Double detection is envisaged (Figs. 10B, 11B). A waveform shaping circuit may be employed in the spike processing (Fig. 9B).

26. 发明专利

CA2027528A1 INTEGRATED CIRCUIT 未知
公开(公告)号：CA2027528A1
公开(公告)日：1991-10-21
申请号：CA2027528
申请日：1990-10-12
申请人： MIKOSHIBA NOBUO , TSUBOCHI KAZUO , MASU KAZUYA
发明人： MIKOSHIBA NOBUO , TSUBOUCHI KAZUO , MASU KAZUYA
IPC分类号： H01L27/088 , H01L29/49 , H01L27/02

27. 发明专利

DE4104096A1 未知
公开(公告)号：DE4104096A1
公开(公告)日：1991-08-22
申请号：DE4104096
申请日：1991-02-11
申请人： MIKOSHIBA NOBUO , TSUBOCHI KAZUO
发明人： MIKOSHIBA NOBUO , TSUBOUCHI KAZUO
IPC分类号： H04B1/10 , H04B1/707 , H04B1/71 , H04J13/00
摘要： The arrangement is applicable when a wide band information signal is subjected to a narrow band disturbing signal. A first embodiment in a spread spectrum receiver has a correlator 17 in the IF stage, the correlation output passing to a mixer 6, such as a double balanced mixer, having squaring characteristics whereby frequency components of a disturbing signal are shifted to the region of DC and a region at twice the frequency of the original disturbing signal. The mixer output passes to a band pass filter 8 to select only the frequency component of the correlation peak. A multi-stage arrangement with a plurality of mixers 6, 10, 14 and filters 8, 12, 16 may be used to remove a plurality of disturbing signals. In a second embodiment, a reference signal input to the correlator 17 is frequency modulated and is provided by a mixer (18) which multiplies the output of an FM modulating oscillator (19) by the output of a pseudo noise code generator (20). In a third embodiment, a notch filter (22) preceding the correlator blocks a centre part of the spectrum of the spread spectrum signal, which part is particularly weak against disturbance. The first embodiment may be combined with the second and/or third embodiment. (Figs 9 to 14).

28. 发明专利

DE3927866A1 未知
公开(公告)号：DE3927866A1
公开(公告)日：1990-03-08
申请号：DE3927866
申请日：1989-08-23
申请人： MIKOSHIBA NOBUO , TSUBOCHI KAZUO
发明人： MIKOSHIBA NOBUO , TSUBOUCHI KAZUO
IPC分类号： H01L23/36 , H01L23/367 , H01L23/373
摘要： The semiconductor device such as a MOSFET comprises a channel 2, a gate electrode 3, a source or drains and insulating layers 11-13, at least one of which is made of a material capable of conducting heat. The material may be ALN or BN and the gate insulator 4 may also be heat conductive. An assembly of semi conductor devices cooled by a layer of heat conductive material is also described. Air or liquid cooled fins may be attached to the device.

29. 发明专利

DE3901639A1 未知
公开(公告)号：DE3901639A1
公开(公告)日：1989-08-03
申请号：DE3901639
申请日：1989-01-20
申请人： MIKOSHIBA NOBUO , TSUBOCHI KAZUO
发明人： MIKOSHIBA NOBUO , TSUBOUCHI KAZUO , TOMIOKA TAKESHI
IPC分类号： H04B1/707 , H04B1/7087 , H04J13/00
摘要： In a spread-spectrum communication apparatus using a convolver as a correlator, demodulating processes in a receiver apparatus using a carrier and a PN code are performed under a non-synchronous condition.

30. 发明专利

GB2120037B SURFACE ACOUSTIC WAVE DEVICE 未知
公开(公告)号：GB2120037B
公开(公告)日：1987-11-18
申请号：GB8306526
申请日：1983-03-09
申请人： MIKOSHIBA NOBUO , TSUBOCHI KAZUO
发明人： MIKOSHIBA NOBUO , TSUBOUCHI KAZUO , SUGAI KAZUYOSHI
IPC分类号： H03H3/08 , H03H9/02 , H03H9/25
摘要： A surface acoustic wave device comprises an elastic substrate having a major surface with a given crystal orientation and having a positive temperature coefficient of delay (TCD), and AlN film deposited on the elastic substrate so that piezoelectric axis of the AlN film has a predetermined direction with respect to the major surface of the elastic substrate having a negative TCD, and electrodes provided on the AlN film or between the elastic substrate and the AlN film.

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