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    • 21. 发明专利
    • REACTION FURNACE FOR GENERATING WATER
    • JP2000072405A
    • 2000-03-07
    • JP24787498
    • 1998-09-02
    • OMI TADAHIROFUJIKIN KK
    • OMI TADAHIROKAWADA KOJIMINAMI YUKIOHIRAO YOSHIYUKIIKEDA SHINICHI
    • H01L21/31B01J23/42C01B5/00H01L21/316
    • PROBLEM TO BE SOLVED: To provide a reaction furnace for generating water capable of stably attaining water generation reaction rate exceeding 99% even under the condition that the temp. of the furnace is =1000 sccm. SOLUTION: The inside of a reaction furnace main body 1 is partitioned into two of upper and lower chambers 14 and 15 by a gas permeable diffusion filter 2. A gaseous starting material being a gaseous mixture of hydrogen with oxygen is fed to the upper part 1st chamber 14 from a gaseous starting material feed port 4 formed on the top wall 12 of the reaction furnace main body 1 and introduced into the lower part 2nd chamber 15 while being diffused by a 1st reflection plate 3 and the diffusion filter 2. Hydrogen and oxygen introduced to the 2nd chamber 15 radically react with each other by bringing it to contact with a platinum catalytic film 5 formed on the peripheral wall 11 and the bottom wall 13 of the reaction furnace main body 1 and the produced water is taken out from a water take-out port 7 of the bottom wall 13. The reaction of hydrogen with oxygen occurs mainly in a narrow space 15a between a 2nd reflection plate 6 and the bottom wall having the size that the outer peripheral part is adjacent to the inner surface of the peripheral wall 11 of the reaction furnace main body 1.
    • 24. 发明专利
    • PRESSURE DETECTOR
    • JPH1082707A
    • 1998-03-31
    • JP23870696
    • 1996-09-10
    • OMI TADAHIROFUJIKIN KK
    • OMI TADAHIRODOI RYOSUKENISHINO KOJIIKEDA SHINICHI
    • G01L9/04G01L9/00G01L19/00G01L19/06
    • PROBLEM TO BE SOLVED: To eliminate the possibility of lowering the quality of product even a pressure detector is applied to a semiconductor production process, by forming a passive film on the gas-contact face of a stainless steel diaphragm having specified dimensions provided on a diaphraqm base. SOLUTION: A diaphragm 3 of about 50μm thick having an inside diameter of about 10mm is made of stainless steel and has a gas-contact face 3a on which a passive film 3b of chromium oxide, a fluorinated passive film 3b or a mixed oxide passive film 3b of aluminum oxide and chromium oxide is formed. After forming the diaphragm 3 integrally with a diaphragm base 4, the diaphragm base 4 formed with the passive film 3b and a sensor base 1 are abutted against the gas contact face 3a of the diaphragm 3 and the entire circumference of the side wall face is welded 8. Subsequently, an oil injection hole 1b is filled with a pressure transmission medium (silicon oil) 5 and a sealing body (ball) 6 is welded 10 to the sensor base 1 thus sealing the silicon oil 5 hermetically.
    • 29. 发明专利
    • MOUNTING STRUCTURE OF PRESSURE DETECTOR
    • JPH11211593A
    • 1999-08-06
    • JP884198
    • 1998-01-20
    • OMI TADAHIROFUJIKIN KK
    • OMI TADAHIRODOI RYOSUKENISHINO KOJIUNO TOMIOYAMAJI MICHIOIKEDA SHINICHI
    • G01L9/04G01L9/00G01L19/00G01L19/06G01L19/14
    • PROBLEM TO BE SOLVED: To prevent the occurrence of such a phenomenon that a diaphragm is strained by a stress applied to a diaphragm type pressure detector, and to prevent the output characteristic and temperature characteristic of the detector, after the detector is incorporated in the main body of a mounting structure for pressure detector provided to a conduit, equipment, etc., front largely varying as compared with those before the detector is incorporated in the main body. SOLUTION: A first step section 18 and a second step section 19 are provided below the detector inserting hole 12 of the main body 11 of a fitting, and the space between the horizontal surface of the second step section 19 and the lower contact surface of a gasket 13 is sealed. Then, flange sections are provided above the sensor base 1 of a pressure sensor and a diaphragm base 4 and both flange sections are combinedly fixed in such a state that the flange sections face oppositely each other. In addition, the space between the lower flange surface of the diaphragm base 4 and the upper contacting surface of the gasket 13 is sealed and the gasket 13 is constituted of a metallic gasket having a nearly rectangular cross section and provided with the upper and lower contacting surfaces. Moreover, the upper flange surface of the sensor base 1 is pressed down by means of a cylindrical sensor retainer 16.
    • 30. 发明专利
    • FLUID CONTROL DEVICE
    • JPH09303308A
    • 1997-11-25
    • JP11620496
    • 1996-05-10
    • OMI TADAHIROFUJIKIN KK
    • OMI TADAHIROHIRAO YOSHIYUKIMINAMI YUKIOYAMAJI MICHIOHIROSE TAKASHIIKEDA SHINICHI
    • F15B11/00F15B13/00F15B13/02F15B13/08F16K27/00H01L21/02
    • PROBLEM TO BE SOLVED: To provide a fluid control device optimal for securing the purity of the fluid, of which purity should be secured at a high level, such as the process gas and for reducing the used variable thereof by using a relatively long passage as an auxiliary passage for flowing the fluid, of which purity should be secured at a high level. SOLUTION: A fluid control device is provided with a relatively long auxiliary passage 18, which is formed of a flow-out passage 12 of an upper valve main body 4 and a bypass passage 15 of a lower valve main body 5, and a relatively short auxiliary passage 17, which is formed of a part of a flow-out passage 14 of the lower valve main body 5. A process gas A is flowed to the relatively long auxiliary passage 18, and a purge gas B is flowed to the relatively short passage 17. Consequently, when the fluid, of which purity should be secured at a high degree, is flowed, the fluid is accumulated in the only relatively short auxiliary passage 17. On the other hand, in the case where the short auxiliary passage 17 is used as the auxiliary passage for the fluid, of which purity should be secured at a high degree, the fluid is accumulated in the relatively long auxiliary passage 18 when the fluid, of which purity should be secured at a high degree, is flowed.