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    • 21. 发明申请
    • Wireless communication receiver
    • 无线通信接收机
    • US20060128334A1
    • 2006-06-15
    • US11170086
    • 2005-06-30
    • Isao IkutaAkio YamamotoYutaka IgarashiStephen Goodwin
    • Isao IkutaAkio YamamotoYutaka IgarashiStephen Goodwin
    • H04B1/06H04B7/00
    • H03G3/3052H03G1/0088
    • To reduce circuit area and power consumption and suppress transient response occurring at switching in PGA of a programmable gain amplifier is provided a wireless communication receiver comprising PGAs for adjusting the gain of a received signal down-converted by mixers and sending it to base-band block. Within PGAs are provided HPFATT circuits formed of capacitors arranged in series, and ladder resistors arranged in parallel, with signal lines, and a plurality of switches. HPFATT is a circuit serving as a high-pass filter and an attenuator for gain switching, wherein switches are controlled by control signal sg from a controller. Amplifiers connected to the rear stage of the HPFATT circuit are formed of MOS transistors.
    • 为了减少电路面积和功率消耗并抑制在可编程增益放大器的PGA中切换时发生的瞬态响应,提供了一种包括用于调节被混频器下变频的接收信号的增益的PGA的无线通信接收机,并将其发送到基带块 。 在PGA中提供由串联布置的电容器构成的HPFATT电路和与信号线并联布置的梯形电阻器以及多个开关。 HPFATT是用作高通滤波​​器和用于增益切换的衰减器的电路,其中开关由来自控制器的控制信号sg控制。 连接到HPFATT电路的后级的放大器由MOS晶体管形成。
    • 23. 发明申请
    • RF Transceiver Using Hopping Frequency Synthesizer
    • 射频收发器使用跳频合成器
    • US20070189361A1
    • 2007-08-16
    • US11737802
    • 2007-04-20
    • YOSHIKAZU SUGIYAMAIsao IkutaYusaku Katsube
    • YOSHIKAZU SUGIYAMAIsao IkutaYusaku Katsube
    • H04B1/00
    • H04L27/2067H03C1/52H03C3/00H04B1/7136H04B1/71635
    • A technique of frequency hopping communication capable of high-speed switching of a plurality of signals having ultra-wide band 528 MHz bandwidth at high-speed and setting and switching a band center frequency and the number of bands arbitrary is provided. A radio transceiver has a frequency hopping communication function of UWB system for switching the ultra wide band signal. In the device, high-speed frequency hopping is realized by controlling an SSB mixer in a local oscillator circuit and switching the frequency of a DDS. The device sets NCO data to the DDS and switches a quadrature phase signal of an output, and switches a signal input of an input terminal of the SSB mixer by a control of a phase switching switch. One of a sum component and a difference component of a mixture of first and second quadrature phase signals is outputted from the output terminal of the SSB mixer.
    • 提供一种跳频通信技术,其能够高速切换具有超宽带528MHz带宽的多个信号,并且设置和切换频带中心频率和频带数量的跳频通信。 无线电收发器具有用于切换超宽带信号的UWB系统的跳频通信功能。 在设备中,通过在本地振荡器电路中控制SSB混频器并切换DDS的频率来实现高速跳频。 该装置将NCO数据设置为DDS并切换输出的正交相位信号,并通过相位切换开关的控制切换SSB混频器的输入端的信号输入。 从SSB混频器的输出端子输出第一和第二正交相位信号的混合的和分量和差分分量之一。
    • 25. 发明申请
    • Voltage-controlled oscillator and RF-IC
    • 压控振荡器和RF-IC
    • US20060181362A1
    • 2006-08-17
    • US11280819
    • 2005-11-17
    • Isao IkutaAkio YamamotoYusaku KatsubeToshiya UozumiYasuyuki Kimura
    • Isao IkutaAkio YamamotoYusaku KatsubeToshiya UozumiYasuyuki Kimura
    • H03B5/08
    • H03B5/1841H03B5/1212H03B5/1228H03B5/1243H03B5/1253
    • There are provided a voltage-controlled oscillator and an RF-IC for W-CDMA, which are capable of ensuring a wide frequency range and improving oscillation stability. The voltage-controlled oscillator (RF-IC) includes: switching A and B inductors generating a magnetic interaction between resonant A and B inductors of a resonant circuit; and an A_NMOS, a B_NMOS, a C_NMOS, and D_NMOS as switch/load means having together a function of changing an inductance value by the magnetic interaction between the resonant A and B inductors and the switching A and B inductors and a function of serving as loads of the switching A and B inductors. The A_NMOS, the B_NMOS, the C_NMOS, and the D_NMOS are turned ON/OFF by a control signal so as to control the mutual induction, whereby the oscillation frequency is switched by changing the inductance value of the resonant circuit. Also, oscillation stability is improved by increasing the inductance value.
    • 提供了一种用于W-CDMA的压控振荡器和RF-IC,其能够确保较宽的频率范围并提高振荡稳定性。 压控振荡器(RF-IC)包括:开关A和B电感器,其在谐振电路的谐振A和B电感器之间产生磁相互作用; 以及作为开关/负载的A_NMOS,B_NMOS,C_NMOS和D_NMOS一起具有通过谐振A和B电感器与开关A和B电感器之间的磁相互作用改变电感值的功能,以及用作 开关A和B电感的负载。 通过控制信号使A_NMOS,B_NMOS,C_NMOS和D_NMOS变为ON / OFF,从而控制互感,从而通过改变谐振电路的电感值来切换振荡频率。 此外,通过增加电感值来提高振荡稳定性。
    • 27. 发明授权
    • Service temperature connector and packaging structure of semiconductor
device employing the same
    • 使用其的半导体器件的使用温度连接器和封装结构
    • US4950173A
    • 1990-08-21
    • US843004
    • 1986-03-24
    • Tetsuro MinemuraHisashi AndoYoshiaki KitaIsao Ikuta
    • Tetsuro MinemuraHisashi AndoYoshiaki KitaIsao Ikuta
    • B32B15/01H01R4/58H01R12/34H05K3/30H05K3/32H05K3/40
    • H05K3/326H01R12/82H01R12/52H01R4/58H05K2201/0308H05K2201/0397H05K2201/1059H05K3/306H05K3/4092
    • The present invention discloses a connector comprising: an insulating substrate having a plurality of through-holes and having a desired first circuit pattern formed on the substrate; female contactors each being formed and fixed around the edge of the through-hole and having an opening, an edge of which extends inwardly of the through-hole, said female contactors being electrically connected to said first pattern; and a male contactor comprising an insulating substrate having a desired second circuit pattern thereon and a plurality of male contactor pins fixed to the substrate and electrically connected to said second pattern, said pins each being located in a position corresponding to each of the openings of said female contactors, wherein said female contactors are made of a thin film of a shape memory alloy and the edge of each of the female contactors is given, before inserting each of the male contactor pins, such a shape memory that the contactor is returned to a position to close the opening when said contactor is subjected to a temperature above the martensitic transition temperature.
    • 本发明公开了一种连接器,包括:绝缘基板,具有多个通孔,并且具有形成在所述基板上的期望的第一电路图案; 每个都形成并固定在通孔的边缘周围的阴接触器,并且具有开口,其开口向内延伸通孔,所述阴接触器电连接到所述第一图案; 以及阳接触器,其包括其上具有期望的第二电路图案的绝缘基板和固定到所述基板并且电连接到所述第二图案的多个阳接触器销,所述引脚各自位于对应于所述第二图案的每个开口的位置 阴接触器,其中所述阴接触器由形状记忆合金的薄膜制成,并且在插入每个阳接触器销之前,给出每个阴接触器的边缘,接触器返回到形状记忆合金的形状记忆体 当所述接触器经受高于马氏体转变温度的温度时关闭开口的位置。