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    • 22. 发明授权
    • Method for producing solid electrolytic capacitor
    • 固体电解电容器的制造方法
    • US06855177B2
    • 2005-02-15
    • US10362227
    • 2002-06-24
    • Tatsuo FujiiKatsumasa MikiMakoto NakanoSuzushi KimuraYuji Mido
    • Tatsuo FujiiKatsumasa MikiMakoto NakanoSuzushi KimuraYuji Mido
    • H01G9/028H01G9/00H01G9/012H01G9/04H01G9/08H01G9/15H01G4/228
    • H01G9/15Y10T29/417Y10T29/43Y10T29/49128Y10T29/49165
    • A method for manufacturing large capacitance solid electrolytic capacitors that can be connected direct with semiconductor component, and offer a superior high frequency characteristic. An aluminum foil 3 is made porous in one of the surfaces, a dielectric layer 2 is formed on the porous portion, a through hole 4 is provided in the aluminum foil 3 at a certain specific location. An insulation layer 5 is formed to cover the other surface, viz. non-porous surface, of the aluminum foil 3 and the inner wall surface of through hole 4, a solid electrolytic layer 6 is provided on the dielectric layer 2, and a through hole electrode 7 is formed in the through hole 4, and then a collector layer 8 is formed on the solid electrolytic layer 6. The insulation layer 5 disposed on aluminum foil 3 is provided with an opening 9 at a certain specific location, and a connection terminal 10 is provided at the opening 9 of insulation layer 5 and the exposed surface of the through hole electrode 7, respectively.
    • 一种可直接与半导体元件连接的大容量固体电解电容器的制造方法,具有优异的高频特性。 在其中一个表面上形成铝箔3多孔,在多孔部分上形成电介质层2,在铝箔3中的特定位置设置有通孔4。 形成绝缘层5以覆盖另一表面,即, 铝箔3的无孔表面和通孔4的内壁表面,在电介质层2上设置固体电解质层6,并且在通孔4中形成通孔电极7,然后将 集电体层8形成在固体电解质层6上。设置在铝箔3上的绝缘层5在特定位置设置有开口9,并且在绝缘层5的开口9处设置有连接端子10, 通孔电极7的暴露表面。
    • 23. 发明授权
    • Method for manufacturing solid electrolytic capacitor
    • 固体电解电容器的制造方法
    • US06852137B2
    • 2005-02-08
    • US10363132
    • 2002-07-16
    • Katsumasa MikiYuji MidoTatsuo FujiiMakoto NakanoSuzushi Kimura
    • Katsumasa MikiYuji MidoTatsuo FujiiMakoto NakanoSuzushi Kimura
    • H01G9/00H01G9/012H01G9/15H01G4/228H01G9/10
    • H01G9/15H01G9/012Y10T29/417
    • A method for manufacturing solid electrolytic capacitor that can be mounted direct on a semiconductor component and offers a superior high frequency characteristic. An aluminum foil 20 is provided on one surface with a resist film 23 and then with a through hole 24. Next, an insulation film 25 is formed to cover the other surface of aluminum foil 20 and to fill the first through hole, and then the resist film 23 is removed; and then the surface of aluminum foil 20 is roughened to be provided with a dielectric layer 27 thereon. A second through hole 36 is formed in the insulation film 25, which is filling the first through hole 24. A through hole electrode 28 is formed in the second through hole; and then, on the surface of the dielectric layer 27, a solid electrolytic layer 29 and a collector layer 30 are formed. After an opening 37 is provided, a first connection terminal 31 is formed therein, and a second connection electrode 32 on the exposed surface of the through hole electrode 28.
    • 一种制造固体电解电容器的方法,其可以直接安装在半导体部件上并提供优异的高频特性。 铝箔20在一个表面上设置有抗蚀剂膜23,然后用通孔24提供。接下来,形成绝缘膜25以覆盖铝箔20的另一个表面并填充第一通孔,然后 除去抗蚀剂膜23; 然后将铝箔20的表面粗糙化,在其上设置介电层27。 第二通孔36形成在填充第一通孔24的绝缘膜25中。在第二通孔中形成有通孔电极28, 然后在电介质层27的表面上形成固体电解质层29和集电体层30。 在提供开口37之后,在其中形成第一连接端子31,并且在通孔电极28的暴露表面上形成第二连接电极32。