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21. 发明授权

US08647992B2 Flowable dielectric using oxide liner 有权
标题翻译：使用氧化物衬垫的可流动电介质
公开(公告)号：US08647992B2
公开(公告)日：2014-02-11
申请号：US12974495
申请日：2010-12-21
申请人： Jingmei Liang , Nitin K. Ingle
发明人： Jingmei Liang , Nitin K. Ingle
IPC分类号： H01L21/02 , H01J37/32 , C23C16/34 , C23C16/56
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/56 , H01J37/32357 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02337
摘要： Methods of forming silicon oxide layers are described. The methods include mixing a carbon-free silicon-containing precursor with a radical-nitrogen precursor, and depositing a silicon-and-nitrogen-containing layer on a substrate. The radical-nitrogen precursor is formed in a plasma by flowing a hydrogen-and-nitrogen-containing precursor into the plasma. Prior to depositing the silicon-and-nitrogen-containing layer, a silicon oxide liner layer is formed to improve adhesion, smoothness and flowability of the silicon-and-nitrogen-containing layer. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film. Methods also include forming a silicon oxide liner layer before applying a spin-on silicon-containing material.
摘要翻译：描述形成氧化硅层的方法。所述方法包括将无碳的含硅前体与自由基 - 氮前体混合，并在基底上沉积含硅和氮的层。通过使含氢和氮的前体流入等离子体，在等离子体中形成自由基 - 氮前体。在沉积含硅和氮的层之前，形成氧化硅衬层以提高含硅和含氮层的粘附性，平滑性和流动性。通过固化和退火膜可以将含硅和氮的层转化为含硅和氧的层。方法还包括在施加旋涂的含硅材料之前形成氧化硅衬层。

22. 发明授权

US08563445B2 Conformal layers by radical-component CVD 有权
标题翻译：通过自由基成分CVD形成保形层
公开(公告)号：US08563445B2
公开(公告)日：2013-10-22
申请号：US13024487
申请日：2011-02-10
申请人： Jingmei Liang , Xiaolin Chen , DongQing Li , Nitin K. Ingle
发明人： Jingmei Liang , Xiaolin Chen , DongQing Li , Nitin K. Ingle
IPC分类号： H01L21/469
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02271 , H01L21/02326 , H01L21/76837
摘要： Methods, materials, and systems are described for forming conformal dielectric layers containing silicon and nitrogen (e.g., a silicon-nitrogen-hydrogen (Si—N—H) film) from a carbon-free silicon-and-nitrogen precursor and radical-nitrogen precursor. The carbon-free silicon-and-nitrogen precursor is predominantly excited by contact with the radical-nitrogen precursor. Because the silicon-and-nitrogen film is formed without carbon, the conversion of the film into hardened silicon oxide is done with less pore formation and less volume shrinkage. The deposited silicon-and-nitrogen-containing film may be wholly or partially converted to silicon oxide which allows the optical properties of the conformal dielectric layer to be selectable. The deposition of a thin silicon-and-nitrogen-containing film may be performed at low temperature to form a liner layer in a substrate trench. The low temperature liner layer has been found to improve the wetting properties and allows flowable films to more completely fill the trench.
摘要翻译：描述了用于形成含有硅和氮的保形电介质层（例如，硅 - 氮 - 氢（Si-N-H）膜）的方法，材料和系统，其来自无碳硅氮前驱物和自由基 - 氮前体。主要通过与自由基 - 氮前体接触激发无碳硅和氮前体。由于硅和氮膜不形成碳，所以将薄膜转化成硬化的氧化硅是在较少的孔形成和较小的体积收缩下进行的。沉积的含硅和氮的膜可以全部或部分地转化为氧化硅，这允许保形介电层的光学特性是可选择的。可以在低温下进行薄的含硅和氮的膜的沉积，以在衬底沟槽中形成衬垫层。已经发现低温衬里层改善了润湿性能，并允许可流动膜更完全地填充沟槽。

23. 发明申请

US20130217239A1 FLOWABLE SILICON-AND-CARBON-CONTAINING LAYERS FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：用于半导体加工的可流动的含硅和碳的层
公开(公告)号：US20130217239A1
公开(公告)日：2013-08-22
申请号：US13589528
申请日：2012-08-20
申请人： Abhijit Basu Mallick , Nitin K. Ingle
发明人： Abhijit Basu Mallick , Nitin K. Ingle
IPC分类号： H01L21/02
CPC分类号： H01L21/02274 , H01L21/02123 , H01L21/02167 , H01L21/02211 , H01L21/02271 , H01L21/02348 , H01L21/76837
摘要： Methods are described for forming and curing a gapfill silicon-and-carbon-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon-and-carbon-containing precursor excited by a radical hydrogen precursor that has been activated in a remote plasma region. Exemplary precursors include 1,3,5-trisilapentane (H3Si—CH2—SiH2—CH2—SiH3) as the silicon-and-carbon-containing precursor and hydrogen (H2) as the hydrogen-containing precursor. The hydrogen-containing precursor may also be a hydrocarbon, such as acetylene (C2H2) or ethylene (C2H4). The hydrogen-containing precursor is passed through a remote plasma region to form plasma effluents (the radical hydrogen precursor) which are flowed into the substrate processing region. When the silicon-and-carbon-containing precursor combines with the plasma effluents in the substrate processing region, they form a flowable silicon-carbon-and-hydrogen-containing layer on the semiconductor substrate.
摘要翻译：描述了用于在半导体衬底上形成和固化间隙填充硅 - 和碳的层的方法。硅和碳组分可以来自已经在远程等离子体区域中被激活的自由基氢前体激发的含硅和碳的前体。示例性前体包括作为含硅和碳的前体的1,3,5-三硅烷（H3Si-CH2-SiH2-CH2-SiH3）和作为含氢前体的氢（H 2）。含氢前体也可以是烃，如乙炔（C 2 H 2）或乙烯（C 2 H 4）。含氢前体通过远程等离子体区域以形成流入衬底加工区域的等离子体流出物（自由基氢前体）。当含硅和碳的前体与衬底加工区域中的等离子体流出物相结合时，它们在半导体衬底上形成可流动的含硅 - 碳和氢的层。

24. 发明申请

US20130045605A1 DRY-ETCH FOR SILICON-AND-NITROGEN-CONTAINING FILMS 审中-公开
标题翻译：含氮和含氮薄膜的干燥剂
公开(公告)号：US20130045605A1
公开(公告)日：2013-02-21
申请号：US13448541
申请日：2012-04-17
申请人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
发明人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01L21/31116
摘要： A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的含硅和氮的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与含硅和氮的材料的暴露区域反应。等离子体流出物与图案化的异质结构反应，从暴露的含硅和氮的材料区域中选择性地除去含硅和氮的材料，同时非常缓慢地除去其它暴露的材料。含氮和氮的材料的选择性部分取决于位于远程等离子体和衬底处理区域之间的离子抑制元件的存在。离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。该方法可用于以超过二氧化硅速率的二十倍来选择性地除去含硅和氮的材料。

25. 发明授权

US08304351B2 In-situ ozone cure for radical-component CVD 有权
标题翻译：用于自由基组分CVD的原位臭氧固化
公开(公告)号：US08304351B2
公开(公告)日：2012-11-06
申请号：US12972711
申请日：2010-12-20
申请人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle , Shankar Venkataraman
发明人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/02164 , H01L21/022 , H01L21/02274 , H01L21/02326 , H01L21/02337 , H01L21/0234
摘要： Methods of forming a dielectric layer are described. The methods include the steps of mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer. Another silicon-and-nitrogen-containing layer may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may again be cured in ozone all without removing the substrate from the substrate processing region. After an integral multiple of dep-cure cycles, the conversion of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment.
摘要翻译：描述形成电介质层的方法。所述方法包括以下步骤：将含硅前体与等离子体流出物混合，并在基底上沉积含硅和氮的层。通过在用于沉积含硅和含氮层的相同基板处理区域中的含臭氧的气氛中固化，将含硅和含氮层转化为含硅和氧的层。可以在含硅和氧的层上沉积另外的含硅和含氮层，并且层叠层可以再次在臭氧中固化而不从衬底处理区移除衬底。在去固化循环的整数倍之后，可以在含氧环境中的较高温度下退火含硅和氧层层的转化。

26. 发明申请

US20120269989A1 LOW TEMPERATURE SILICON OXIDE CONVERSION 有权
标题翻译：低温氧化硅转换
公开(公告)号：US20120269989A1
公开(公告)日：2012-10-25
申请号：US13237131
申请日：2011-09-20
申请人： Jingmei Liang , Nitin K. Ingle , Sukwon Hong , Anjana M. Patel
发明人： Jingmei Liang , Nitin K. Ingle , Sukwon Hong , Anjana M. Patel
IPC分类号： C23C16/40 , C23C16/56 , C23C16/50
CPC分类号： C23C16/345 , C23C16/56
摘要： A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The polysilazane film is converted to silicon oxide by exposing the polysilazane film to humidity at low substrate temperature. The polysilazane film may also be dipped in a liquid having both oxygen and hydrogen, such as water, hydrogen peroxide and or ammonium hydroxide. These conversion techniques may be used separately or in a sequential combination. Conversion techniques described herein hasten conversion, produce manufacturing-worthy films and remove the requirement of a high temperature oxidation treatment. An ozone treatment may precede the conversion technique(s).
摘要翻译：描述形成氧化硅层的方法。该方法首先通过自由基组分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）膜。通过将聚硅氮烷膜暴露于低底物温度下的湿度，将聚硅氮烷膜转化为氧化硅。聚硅氮烷膜也可以浸渍在具有氧和氢的液体中，例如水，过氧化氢和/或氢氧化铵。这些转化技术可以单独使用或以顺序组合使用。本文所述的转化技术加速转化，产生制造有价值的膜并去除高温氧化处理的要求。臭氧处理可以在转化技术之前。

27. 发明申请

US20120238108A1 TWO-STAGE OZONE CURE FOR DIELECTRIC FILMS 审中-公开
标题翻译：用于电介质膜的两级氧化固化
公开(公告)号：US20120238108A1
公开(公告)日：2012-09-20
申请号：US13227161
申请日：2011-09-07
申请人： Xiaolin Chen , Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
发明人： Xiaolin Chen , Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/316
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/56 , H01L21/02219 , H01L21/02326 , H01L21/02337 , H01L21/0234 , H01L21/31111
摘要： A method of forming a silicon oxide layer is described. The method increases the oxygen content of a dielectric layer by curing the layer in a two-step ozone cure. The first step involves exposing the dielectric layer to ozone while the second step involves exposing the dielectric layer to ozone excited by a local plasma. This sequence can reduce or eliminate the need for a subsequent anneal following the cure step. The two-step ozone cures may be applied to silicon-and-nitrogen-containing film to convert the films to silicon oxide.
摘要翻译：描述形成氧化硅层的方法。该方法通过在两步臭氧固化中固化该层来增加电介质层的氧含量。第一步涉及将介电层暴露于臭氧，而第二步涉及将电介质层暴露于由局部等离子体激发的臭氧。该顺序可以减少或消除在固化步骤之后的后续退火的需要。两步臭氧治疗可以应用于含硅和氮的膜以将膜转化为氧化硅。

28. 发明授权

US08012887B2 Precursor addition to silicon oxide CVD for improved low temperature gapfill 失效
标题翻译：添加氧化硅CVD用于改善低温缝隙填料的前体
公开(公告)号：US08012887B2
公开(公告)日：2011-09-06
申请号：US12489234
申请日：2009-06-22
申请人： Shankar Venkataraman , Hiroshi Hamana , Manuel A. Hernandez , Nitin K. Ingle , Paul Edward Gee
发明人： Shankar Venkataraman , Hiroshi Hamana , Manuel A. Hernandez , Nitin K. Ingle , Paul Edward Gee
IPC分类号： H01L21/31 , C23C16/00
CPC分类号： H01L21/31612 , C23C16/401 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02222 , H01L21/02271 , H01L21/76224
摘要： Methods of depositing silicon oxide layers on substrates involve flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that a uniform silicon oxide growth rate is achieved across the substrate surface. The surface of silicon oxide layers grown according to embodiments may have a reduced roughness when grown with the additive precursor. In other aspects of the disclosure, silicon oxide layers are deposited on a patterned substrate with trenches on the surface by flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that the trenches are filled with a reduced quantity and/or size of voids within the silicon oxide filler material.
摘要翻译：在衬底上沉积氧化硅层的方法包括使含硅前体，氧化气体，水和添加剂前体流入处理室，使得在衬底表面上实现均匀的氧化硅生长速率。根据实施例生长的氧化硅层的表面可以在与添加剂前体一起生长时具有减小的粗糙度。在本公开的其他方面中，通过使含硅前体，氧化气体，水和添加剂前体流入处理室，将硅氧化物层沉积在具有表面上的沟槽的图案化衬底上，使得沟槽填充有氧化硅填充材料内的空隙的数量和/或尺寸减小。

29. 发明授权

US09390914B2 Wet oxidation process performed on a dielectric material formed from a flowable CVD process 有权
标题翻译：在由可流动CVD工艺形成的电介质材料上进行湿氧化处理
公开(公告)号：US09390914B2
公开(公告)日：2016-07-12
申请号：US13396410
申请日：2012-02-14
申请人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle
发明人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle
IPC分类号： H01L21/02
CPC分类号： H01L21/02326 , H01L21/02343
摘要： Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.
摘要翻译：提供了对在衬底内限定的沟槽或通孔内填充的含硅介电材料进行湿氧化处理的方法。在一个实施例中，在衬底上形成介电材料的方法包括通过可流动CVD工艺在衬底上形成电介质材料，固化设置在衬底上的电介质材料，对设置在衬底上的电介质材料进行湿氧化处理并在衬底上形成氧化介电材料。

30. 发明授权

US09324576B2 Selective etch for silicon films 有权
标题翻译：硅膜的选择性蚀刻
公开(公告)号：US09324576B2
公开(公告)日：2016-04-26
申请号：US13088930
申请日：2011-04-18
申请人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle
发明人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C23F3/00 , H01L21/3213 , H01L21/3065 , H01L21/311
CPC分类号： H01L21/32137 , H01L21/3065 , H01L21/311 , H01L21/31116 , H01L21/32136
摘要： A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or no silicon oxide. More generally, silicon-containing films containing less oxygen are removed more rapidly than silicon-containing films which contain more oxygen. Other exemplary applications include trimming silicon carbon nitride films while essentially retaining silicon oxycarbide. Applications such as these are enabled by the methods presented herein and enable new process flows. These process flows are expected to become desirable for a variety of finer linewidth structures. Methods contained herein may also be used to etch silicon-containing films faster than nitrogen-and-silicon containing films having a greater concentration of nitrogen.
摘要翻译：描述了蚀刻图案化异质含硅结构的方法，并且包括与现有远程等离子体蚀刻相比具有反向选择性的远程等离子体蚀刻。这些方法可用于在少量或不含氧化硅的同时去除多晶硅。更一般地，含有较少氧的含硅膜比含有更多氧的含硅膜更快地除去。其他示例性应用包括修整硅碳氮化物膜，同时基本上保留碳氧化硅。诸如这些的应用由本文提供的方法实现，并且实现了新的工艺流程。预期这些工艺流程对于各种更细的线宽结构是理想的。本文包含的方法也可以用于比含有较高氮浓度的含氮和硅的膜更快地蚀刻含硅膜。

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