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21. 发明申请

US20060220230A1 Semiconductor device and method of manufacturing thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060220230A1
公开(公告)日：2006-10-05
申请号：US11341005
申请日：2006-01-27
申请人： Naotaka Tanaka , Yasuhiro Yoshimura , Takahiro Naito , Takashi Akazawa
发明人： Naotaka Tanaka , Yasuhiro Yoshimura , Takahiro Naito , Takashi Akazawa
IPC分类号： H01L23/34
CPC分类号： H01L24/97 , H01L23/481 , H01L23/5226 , H01L24/81 , H01L25/0657 , H01L2224/0401 , H01L2224/05552 , H01L2224/05571 , H01L2224/05572 , H01L2224/1134 , H01L2224/13012 , H01L2224/16147 , H01L2224/16235 , H01L2224/16237 , H01L2224/73204 , H01L2224/81141 , H01L2224/81191 , H01L2224/81801 , H01L2224/81898 , H01L2224/83192 , H01L2224/97 , H01L2225/0652 , H01L2225/06527 , H01L2225/06541 , H01L2225/06551 , H01L2225/06572 , H01L2225/06579 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01049 , H01L2924/01057 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/12044 , H01L2924/14 , H01L2924/15311 , H01L2924/30105 , H01L2924/30107 , H01L2924/3025 , H01L2224/81 , H01L2224/13099 , H01L2924/00012
摘要： In order to implement a high-density high-performance semiconductor system small in size, there is provided a method for implementing three-dimensional connection between a plurality of semiconductor chips differing from each other with the shortest metal interconnect length, using penetration electrodes, thereby enabling a fast operation at a low noise level, the method being a three-dimensional connection method very low in cost, and short in TAT in comparison with the known example, capable of bonding at an ordinary temperature, and excellent in connection reliability. For example, in a three-dimensional chip laminate structure with a metal interconnect substrate for effecting connection between upper and lower semiconductor chips, disposed in between the upper and lower chips differing from each other, through-holes reaching respective electrodes on the surface layer side are formed on the respective backside face sides of the semiconductor chip and the metal interconnect substrate, a metal plating film is applied to the sidewalls of the respective through-holes and peripheries thereof, on the backside face side, and metal bumps of the semiconductor chip stacked on the upper tier side are pressed into contact with the interiors of the respective through-holes with the metal plated film applied thereto to be thereby inserted therein, due to portions of the respective metal bumps, undergoing deformation, causing the metal bumps to be geometrically caulked inside the respective through-holes formed in the semiconductor chip and the metal interconnect substrate, thereby implementing electrical connection.
摘要翻译：为了实现小尺寸的高密度高性能半导体系统，提供了一种使用穿透电极在金属互连长度最短的多个半导体芯片之间实现三维连接的方法，从而能够以低噪声水平进行快速操作，该方法是成本高的三维连接方法，并且与已知示例相比能够在常温下结合并且连接可靠性优异的TAT较短。例如，在具有用于实现上下半导体芯片之间的连接的金属互连基板的三维芯片层叠结构中，设置在彼此不同的上部和下部芯片之间，通孔到达表面层侧的各个电极形成在半导体芯片和金属互连基板的各自的背面侧上，在背面侧的各个通孔及其周边的侧壁上施加金属镀膜，并且将半导体芯片的金属凸块堆叠在上层侧的多个金属凸块被压入与各个通孔的内部，金属镀膜施加到其上，从而由于各个金属凸块的部分而变形，从而使金属凸块成为在形成在半导体芯片和金属互连件s中的各个通孔内部几何地铆接 ubstrate，从而实现电气连接。

22. 发明申请

US20060170112A1 Semiconductor device and method of manufacturing thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060170112A1
公开(公告)日：2006-08-03
申请号：US11329600
申请日：2006-01-10
申请人： Naotaka Tanaka , Yasuhiro Yoshimura , Takahiro Naito , Takashi Akazawa
发明人： Naotaka Tanaka , Yasuhiro Yoshimura , Takahiro Naito , Takashi Akazawa
IPC分类号： H01L23/52
CPC分类号： H01L25/0657 , H01L23/481 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/97 , H01L2224/16145 , H01L2224/16237 , H01L2224/81191 , H01L2224/81385 , H01L2224/81898 , H01L2224/97 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06593 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2924/14 , H01L2924/15311 , H01L2924/18161 , H01L2924/19041 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2224/81
摘要： A connection method for materializing a high-performance semiconductor system which is small-sized and high dense, is capable to three-dimensionally connecting a plurality of different kinds of semiconductor chips through piercing electrodes with shortest wiring lengths. The connection method enables high-speed operation with low noise, so as to obtain reliable and excellent connection in a short TAT at low costs. In a three-dimensional chip lamination composed of different kinds of semiconductor chips laminated one upon another with an interpose chip being interposed therebetween for connecting the upper and lower semiconductor chips, the semiconductor chips and the interposer chips are polished by grinding or the like at their rear surfaces so as to have thin thickness, holes are formed at rear surface positions corresponding to external electrode parts on the device side (front surface side) so that the holes extend to front surface electrodes, by dry etching or the like, and metal plating films are applied to the side walls of the holes and rear surface side, metal bumps of another semiconductor chip laminated at an upper stage being press-fitted into the holes applied with the metal plating films through deformation and being geometrically calked in the through holes formed in the semiconductor chip so as to electrically connected thereto.
摘要翻译：用于实现小型和高密度的高性能半导体系统的连接方法能够通过具有最短布线长度的穿孔电极三维地连接多种不同种类的半导体芯片。连接方式能够实现低噪音的高速运行，从而在短时间内以低成本获得可靠且良好的连接。在由彼此层叠的不同种类的半导体芯片组成的三维芯片层叠件之间插入有插入芯片以连接上半导体芯片和下半导体芯片，半导体芯片和插入器芯片通过其研磨等进行抛光后表面具有薄的厚度，在与设备侧（前表面侧）上的外部电极部分相对应的后表面位置处形成孔，使得孔通过干蚀刻等延伸到前表面电极，并且金属电镀将膜施加到孔和后表面侧的侧壁上，在上层层叠的另一半导体芯片的金属凸块通过变形被压配合到施加有金属镀膜的孔中，并且几何地形成在形成的通孔中在半导体芯片中与其电连接。

23. 发明授权

US06727583B2 Semiconductor device 有权
公开(公告)号：US06727583B2
公开(公告)日：2004-04-27
申请号：US10093639
申请日：2002-03-07
申请人： Yasuhiro Naka , Naotaka Tanaka , Ikuo Yoshida , Satoshi Imasu , Takahiro Naito
发明人： Yasuhiro Naka , Naotaka Tanaka , Ikuo Yoshida , Satoshi Imasu , Takahiro Naito
IPC分类号： H01L2334
CPC分类号： H01L21/563 , H01L25/0655 , H01L25/50 , H01L29/0657 , H01L2224/16225 , H01L2224/32014 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2924/00014 , H01L2924/01019 , H01L2924/01079 , H01L2924/15311 , H01L2924/3025 , H01L2924/00 , H01L2224/0401
摘要： In a semiconductor device adapted to be mounted on a board and to be electrically connected to the board, comprising, at least two semiconductor electric chips, and a substrate on which the semiconductor electric chips are mounted and to which the semiconductor electric chips are electrically connected, in such a manner that the semiconductor electric chips are mounted on and electrically connected to the board through the substrate, according to the present invention, a thickness of each of the semiconductor electric chips in a direction in which the each of the semiconductor electric chips and the substrate are stacked is smaller than a thickness of the substrate in the direction.

24. 外观设计

USD602466S1 Audio player 有权
公开(公告)号：USD602466S1
公开(公告)日：2009-10-20
申请号：US29311036
申请日：2008-12-12
申请人： Takuro Hibino , Takahiro Naito
设计人： Takuro Hibino , Takahiro Naito

25. 发明授权

US07593027B2 Image generating apparatus 失效
标题翻译：图像生成装置
公开(公告)号：US07593027B2
公开(公告)日：2009-09-22
申请号：US12027660
申请日：2008-02-07
申请人： Kunio Sawai , Takahiro Naito
发明人： Kunio Sawai , Takahiro Naito
IPC分类号： B41J2/32 , B41J29/00
CPC分类号： B41J17/32 , B41J29/02 , B41J35/28
摘要： This image generating apparatus includes a chassis and a side plate, a cartridge stop member provided on a first side surface of the chassis integrally has a first shaft stop portion coming into contact with a first end surface of a shaft of a print head pressing member, and a side plate provided on a second side surface of the chassis integrally has a second shaft stop portion coming into contact with a second end surface of the shaft of the print head pressing member.
摘要翻译：该图像产生装置包括底盘和侧板，设置在底盘的第一侧表面上的盒止动构件一体地具有与打印头按压构件的轴的第一端面接触的第一轴止动部，并且设置在底盘的第二侧表面上的侧板具有与打印头按压构件的轴的第二端面接触的第二轴止挡部。

26. 发明授权

US5378656A Leadframe, semiconductor integrated circuit device using the same, and method of and process for fabricating the same 失效
标题翻译：引线框，使用其的半导体集成电路器件及其制造方法和工艺
公开(公告)号：US5378656A
公开(公告)日：1995-01-03
申请号：US38684
申请日：1993-03-29
申请人： Yujiro Kajihara , Kazunari Suzuki , Kunihiro Tsubosaki , Hiromichi Suzuki , Yoshinori Miyaki , Takahiro Naito , Sueo Kawai
发明人： Yujiro Kajihara , Kazunari Suzuki , Kunihiro Tsubosaki , Hiromichi Suzuki , Yoshinori Miyaki , Takahiro Naito , Sueo Kawai
IPC分类号： H01L23/50 , H01L21/48 , H01L21/52 , H01L21/60 , H01L23/495
CPC分类号： H01L24/743 , H01L21/4842 , H01L23/49503 , H01L23/49513 , H01L23/49541 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/02166 , H01L2224/29007 , H01L2224/2919 , H01L2224/32014 , H01L2224/32055 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49171 , H01L2224/73265 , H01L2224/743 , H01L2224/82181 , H01L2224/83192 , H01L2224/83194 , H01L2224/838 , H01L2224/85181 , H01L2224/859 , H01L2224/92 , H01L2224/92247 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/14 , H01L2924/1433 , H01L2924/181 , Y10T29/49121
摘要： In order to improve the package body cracking resistance of an LSI package at the reflow soldering and to provide both a leadframe suitable for fabricating the LSI package according to the flexible manufacturing system and an LSI using the leadframe, the adhered area between a semiconductor chip 2 and a resin is enlarged by making the external size of a die pad 3 smaller than that of the semiconductor chip to be mounted thereon. Moreover, a variety of semiconductor chips 2 having different external sizes can be mounted on the die pad 3 by cutting the leading ends of leads 5 to a suitable length in accordance with the external sizes of the semiconductor chips 2.
摘要翻译：为了提高回流焊时的LSI封装的封装体抗开裂性，并且提供适用于制造根据柔性制造系统的LSI封装的引线框和使用引线框的LSI，半导体芯片2 并且通过使管芯焊盘3的外部尺寸小于要安装在其上的半导体芯片的外部尺寸来扩大树脂。此外，通过根据半导体芯片2的外部尺寸将引线5的前端切割成合适的长度，可以将不同的外部尺寸的各种半导体芯片2安装在管芯焊盘3上。

27. 再颁专利

USRE43443E1 Leadframe semiconductor integrated circuit device using the same, and method of and process for fabricating the two 有权
标题翻译：使用其的引线框半导体集成电路器件及其制造方法和工艺
公开(公告)号：USRE43443E1
公开(公告)日：2012-06-05
申请号：US09987978
申请日：2001-11-16
申请人： Yujiro Kajihara , Kazunari Suzuki , Kunihiro Tsubosaki , Hiromichi Suzuki , Yoshinori Miyaki , Takahiro Naito , Sueo Kawai
发明人： Yujiro Kajihara , Kazunari Suzuki , Kunihiro Tsubosaki , Hiromichi Suzuki , Yoshinori Miyaki , Takahiro Naito , Sueo Kawai
IPC分类号： H01L23/495
CPC分类号： H01L24/743 , H01L21/4842 , H01L23/49503 , H01L23/49513 , H01L23/49541 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L2224/02166 , H01L2224/29007 , H01L2224/2919 , H01L2224/32014 , H01L2224/32055 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49171 , H01L2224/73265 , H01L2224/743 , H01L2224/82181 , H01L2224/83192 , H01L2224/83194 , H01L2224/838 , H01L2224/85181 , H01L2224/859 , H01L2224/92 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/14 , H01L2924/1433 , H01L2924/181 , Y10T29/49121 , H01L2924/00012 , H01L2924/00 , H01L2924/3512 , H01L2224/05599
摘要： In order to improve the package body cracking resistance of an LSI package at the reflow soldering and to provide both a leadframe suitable for fabricating the LSI package according to the flexible manufacturing system and an LSI using the leadframe, the adhered area between a semiconductor chip 2 and a resin is enlarged by making the external size of a die pad 3 smaller than that of the semiconductor chip to be mounted thereon. Moreover, a variety of semiconductor chips 2 having different external sizes can be mounted on the die pad 3 by cutting the leading ends of leads 5 to a suitable length in accordance with the external sizes of the semiconductor chips 2.
摘要翻译：为了提高回流焊时的LSI封装的封装体抗开裂性，并且提供适用于制造根据柔性制造系统的LSI封装的引线框和使用引线框的LSI，半导体芯片2 并且通过使管芯焊盘3的外部尺寸小于要安装在其上的半导体芯片的外部尺寸来扩大树脂。此外，通过根据半导体芯片2的外部尺寸将引线5的前端切割成合适的长度，可以将不同的外部尺寸的各种半导体芯片2安装在管芯焊盘3上。

28. 发明授权

US08132974B2 Image generating apparatus 有权
标题翻译：图像生成装置
公开(公告)号：US08132974B2
公开(公告)日：2012-03-13
申请号：US12021726
申请日：2008-01-29
申请人： Kunio Sawai , Takahiro Naito
发明人： Kunio Sawai , Takahiro Naito
IPC分类号： B41J2/335
CPC分类号： B41J2/325 , B41J2202/31
摘要： An image generating apparatus includes a print portion printing a paper, a platen roller arranged so as to be opposed to the print portion, a heat radiating member mounted on the print portion, radiating heat generated in the print portion, integrally provided with a plate-like support shaft as an axis of rotation and rotatable in a direction for coming into pressure contact with or separating from the platen roller, a regulating member regulating movement of the print portion in a printing direction of the paper, a chassis having a hole-shaped bearing receiving the plate-like support shaft, and a side plate mounted on the chassis.
摘要翻译：图像产生装置包括打印纸的打印部分，与打印部分相对布置的压纸辊;安装在打印部分上的散热构件，辐射在打印部分中产生的热量，支撑轴作为旋转轴线并且可沿着与压纸辊压力接触或分离的方向旋转;调节构件，其调节打印部分沿纸张的打印方向的移动;底座，具有孔形接收板状支撑轴的轴承和安装在底盘上的侧板。

29. 发明授权

US07922406B2 Image generating apparatus 有权
标题翻译：图像生成装置
公开(公告)号：US07922406B2
公开(公告)日：2011-04-12
申请号：US12027489
申请日：2008-02-07
申请人： Kunio Sawai , Takahiro Naito
发明人： Kunio Sawai , Takahiro Naito
IPC分类号： B41J25/304
CPC分类号： B41J25/304 , B41J25/312
摘要： In this image generating apparatus, a driving gear portion is so formed that the diameter of the outer peripheral surface of a first toothless portion is smaller than the tip diameter of a first toothed portion, and so arranged that the first toothless portion thereof slides on a second toothed portion of a driven gear portion of a print head rotating member in the vicinity of a position where a print head presses a platen roller with a pressing portion.
摘要翻译：在该图像生成装置中，驱动齿轮部形成为使得第一无齿部的外周面的直径小于第一齿部的端部直径，并且布置成使得第一无齿部在其上滑动打印头旋转构件的从动齿轮部分的第二齿部在打印头用压制部按压压纸辊的位置附近。

30. 发明申请

US20080192106A1 Image Generating Apparatus 失效
标题翻译：图像发生装置
公开(公告)号：US20080192106A1
公开(公告)日：2008-08-14
申请号：US12027660
申请日：2008-02-07
申请人： Kunio SAWAI , Takahiro Naito
发明人： Kunio SAWAI , Takahiro Naito
IPC分类号： G01D15/10
CPC分类号： B41J17/32 , B41J29/02 , B41J35/28
摘要： This image generating apparatus includes a chassis and a side plate, a cartridge stop member provided on a first side surface of the chassis integrally has a first shaft stop portion coming into contact with a first end surface of a shaft of a print head pressing member, and a side plate provided on a second side surface of the chassis integrally has a second shaft stop portion coming into contact with a second end surface of the shaft of the print head pressing member.
摘要翻译：该图像产生装置包括底盘和侧板，设置在底盘的第一侧表面上的盒止动构件一体地具有与打印头按压构件的轴的第一端面接触的第一轴止动部，并且设置在底盘的第二侧表面上的侧板具有与打印头按压构件的轴的第二端面接触的第二轴止挡部。

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