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    • 21. 发明授权
    • Thermal infrared sensors, imaging devices, and manufacturing methods for
such sensors
    • 热红外传感器,成像装置和这种传感器的制造方法
    • US6034374A
    • 2000-03-07
    • US967532
    • 1997-11-10
    • Mitsuteru KimuraKenji Udagawa
    • Mitsuteru KimuraKenji Udagawa
    • G01J1/02G01J5/02G01J5/20H01L37/02H01L27/144
    • G01J5/02G01J5/023G01J5/20H01L37/02
    • Thermal infrared sensors are disclosed for the detection of an incident infrared flux. The sensors include an absorber each including an absorption layer and a thermal sensing element. The incident infrared flux is absorbed by the absorption layer. Heat generated by the absorption is detected by the thermal sensing element such as a thermistor. The absorber is supported above a substrate by supports and bridges, reducing heat transfer from the absorber to the substrate. The supports and bridges include electrical connections to the absorber and the substrate. The supports and bridges are located beneath the absorber so that a large proportion of the area of the absorber is available to absorb the incident flux. Imaging devices including arrays of such sensors and fabrication methods for the sensors and imaging devices are also disclosed.
    • 公开了用于检测入射红外线通量的热红外传感器。 传感器包括吸收体,每个吸收体包括吸收层和热感测元件。 入射的红外线通量被吸收层吸收。 由吸收产生的热量由热敏元件如热敏电阻检测。 吸收器通过支撑和桥支撑在衬底上方,减少从吸收体到衬底的热传递。 支撑件和桥梁包括与吸收器和基板的电连接。 支撑件和桥梁位于吸收器下面,使得吸收器的大部分区域可用于吸收入射通量。 还公开了包括这种传感器的阵列和用于传感器和成像装置的制造方法的成像装置。
    • 23. 发明申请
    • HEAT CONDUCTION-TYPE SENSOR FOR CALIBRATING EFFECTS OF TEMPERATURE AND TYPE OF FLUID, AND THERMAL FLOW SENSOR AND THERMAL BAROMETRIC SENSOR USING THIS SENSOR
    • 用于校准温度和流体类型的热传导型传感器,以及使用该传感器的热流量传感器和热量传感器
    • US20120318058A1
    • 2012-12-20
    • US13389565
    • 2012-01-13
    • Mitsuteru Kimura
    • Mitsuteru Kimura
    • G01F1/68G01L7/00G01K17/16G01K15/00
    • G01F1/6965G01F1/6842G01F1/6845G01F1/692G01L11/002G01L19/0092G01L27/002
    • A heat conduction-type sensor corrects (calibrate) effects of a temperature of a measurement target fluid and a type of the fluid on a measurement value in measurement of a flow velocity, a mass flow, or an atmospheric pressure. Also provided is a thermal flow sensor and a thermal barometric sensor with this correcting function, high sensitivity, simple configuration, and low cost. At least two thin films that are thermally separated from a substrate through the same cavity are provided, one thin film comprises a heater and a temperature sensor, and the other thin film comprises at least one temperature sensor, the temperature sensors being thin-film thermocouples. The thin film is arranged in proximity so that it is heated only through the measurement target fluid by heating of the heater. A calibration circuit calculates and compares quantities concerning heat transfer coefficients of a standard fluid and the unknown measurement target fluid.
    • 热传导型传感器在流速,质量流量或大气压力的测量中校正(校准)测量对象流体和流体类型的温度对测量值的影响。 还提供了具有该校正功能,高灵敏度,简单配置和低成本的热流量传感器和热气压传感器。 提供了至少两个通过相同空腔与衬底热分离的薄膜,一个薄膜包括加热器和温度传感器,另一薄膜包括至少一个温度传感器,温度传感器是薄膜热电偶 。 薄膜被布置成接近,使得仅通过加热器的加热仅通过测量目标流体被加热。 校准电路计算并比较与标准流体和未知测量目标流体的传热系数有关的量。
    • 24. 发明申请
    • Calibrating Method of Current Detection Type Thermocouple or the Like, Calibration Method of Offset of Operational Amplifier, Current Detection Type Thermocouple, Infrared Sensor and Infrared Detector
    • 电流检测类型热电偶等的校准方法,运算放大器偏移校准方法,电流检测型热电偶,红外传感器和红外探测器
    • US20080317087A1
    • 2008-12-25
    • US12094119
    • 2006-11-16
    • Mitsuteru Kimura
    • Mitsuteru Kimura
    • G01K15/00G01K7/02
    • G01K15/00G01J5/16G01K7/02G01K15/005
    • To calibrate a thermocouple, a calibrating thermocouple, made of the same thermocouple material as a detecting thermocouple, is used. An absolute thermoelectric power Ero, of the calibrating thermocouple is determined in advance, and the detecting thermocouple is assumed to have the same Ero. An internal resistance rs of the detecting thermocouple is obtained, and a short-circuit current Is is measured with a measured temperature difference ΔTs using an operational amplifier, and the temperature difference ΔTs is calculated. An offset of the operational amplifier is also calibrated. The thermocouples and switches are connected to an inverting input terminal of the operational amplifier, so that the sensors can be selected. Alternatively, these are connected to a non-inverting input terminal, allowing a plurality of the thermocouples to be switched, while a small resistor r is connected to the inverting terminal thereof, to provide an equivalent current detection type thermocouple. In this manner, even if a hot junction or a cold junction is formed on a cantilever or a diaphragm, the temperature can be calibrated or corrected easily at a high precision.
    • 为了校准热电偶,使用由与检测热电偶相同的热电偶材料制成的校准热电偶。 预先确定校准热电偶的绝对热电功率Ero,并且假设检测热电偶具有相同的Ero。 获得检测热电偶的内部电阻rs,并使用运算放大器以测量的温差DeltaTs测量短路电流Is,并计算温差DeltaT。 运算放大器的偏移量也被校准。 热电偶和开关连接到运算放大器的反相输入端,从而可以选择传感器。 或者,这些连接到非反相输入端子,允许多个热电偶切换,同时小电阻器r连接到其反相端子,以提供等效电流检测型热电偶。 以这种方式,即使在悬臂或隔膜上形成热接点或冷接点,也可以以高精度容易地校准或校正温度。
    • 25. 发明申请
    • Display unit
    • 显示单元
    • US20050123265A1
    • 2005-06-09
    • US10505647
    • 2003-02-20
    • Mitsuteru Kimura
    • Mitsuteru Kimura
    • G02B26/08G02F1/1333G02F1/13357G02F1/137G02F1/15G02F1/157G02F1/19G09F9/35G09F9/37G02B6/00
    • G02F1/133621G02F1/1375G02F1/1523G02F1/19G02F1/195
    • A display unit comprising a board (10), a three-primary color-independent optical waveguide (100) arranged and formed on one side thereof, and a transparent electrode(30) and an electrode (40) serving as counter electrodes arranged and formed to sandwich an electric field reaction material (20) formed on one of two optical waveguides constituting the optical waveguide (100) and being transparent to waveguide light, wherein part of the waveguide light is allowed to pass at least the field reaction material (20), and a voltage applied between these counter electrodes changes the shape of the reaction material (20) to scatter the waveguide light and form pixels in to a displayed image, whereby the device is free from a mechanical drive unit, high in reliability, quality, brightness and response speed, low in power consumption and cost, and capable of full color displaying.
    • 一种显示单元,包括:板(10),在其一侧上布置和形成的三原色独立光波导(100),以及布置和形成的用作对置电极的透明电极(30)和电极(40) 夹持形成在构成光波导(100)的两个光波导中的一个上并且对波导管透明的电场反应材料(20),使波导光的一部分至少通过场反应材料(20) 并且施加在这些对置电极之间的电压改变反应材料(20)的形状以散射波导光并将像素形成到所显示的图像中,由此该装置没有机械驱动单元,可靠性,质量高, 亮度和响应速度,功耗和成本低,并且能够进行全彩显示。
    • 26. 发明授权
    • Method and apparatus for temperature measurement, and thermal infrared image sensor
    • 温度测量方法和装置,以及热红外图像传感器
    • US06851849B2
    • 2005-02-08
    • US10169083
    • 2001-01-11
    • Mitsuteru Kimura
    • Mitsuteru Kimura
    • G01J1/42G01J1/44G01J5/20G01J5/22G01J5/48G01K7/01H01L27/14H01L27/146H01L35/00H04N5/33G01K7/00
    • G01J1/44G01J5/22G01K7/01H04N5/33
    • At least one forward-biased semiconductor diode having a potential barrier is used as a temperature sensor whose sensitivity can be finely adjusted. An operational amplifier circuit (A1) is used to apply a bias voltage of DC or rectangular waveform to a semiconductor diode (D) having a potential barrier used as a temperature sensor. In view of the fact that the temperature sensitivity of the semiconductor diode (D) depends on the height of its potential barrier, the forward bias voltage applied from a bias circuit (2) directly to the semiconductor diode (D) is finely adjusted to obtain desired temperature sensitivity. The output voltage of the sensor is associated with a current, having an exponential temperature dependence, which flows in the semiconductor diode (D) with the forward bias being fixed.
    • 使用具有势垒的至少一个正向偏置半导体二极管作为敏感度可以精细调节的温度传感器。 使用运算放大器电路(A1)将DC或矩形波形的偏置电压施加到具有用作温度传感器的势垒的半导体二极管(D)。 考虑到半导体二极管(D)的温度敏感度取决于其势垒的高度,将从偏置电路(2)直接施加到半导体二极管(D)的正向偏置电压进行微调,以获得 所需温度敏感度。 传感器的输出电压与正向偏压固定在半导体二极管(D)中流动的具有指数温度依赖性的电流相关联。
    • 27. 发明授权
    • Noncontacting thermometer
    • 非接触式温度计
    • US6048092A
    • 2000-04-11
    • US826796
    • 1997-03-25
    • Mitsuteru KimuraTakeshi Kudo
    • Mitsuteru KimuraTakeshi Kudo
    • G01J5/20G01J5/24
    • G01J5/24
    • This invention concerns a noncontacting type thermometer which is improved in sensitivity of detection and accuracy of measurement and meanwhile adapted to prevent a thermistor element itself from self-generation of heat. A pulse voltage generating circuit 15 generates a pulse voltage of a rectangular waveform having a pulse wave height, a pulse width, and a pulse cycle enough to render negligible the effects of the self-generation of heat of a thermistor bolometer element in accordance with the thermal capacity of the thermistor bolometer. A detecting circuit 20 admits the pulse voltage, generates a differential voltage arising from a change in the magnitude of resistance corresponding to the amount of an incident infrared radiation of an infrared radiation detecting thermistor bolometer element RA, and amplifies this differential voltage by means of a differential amplifier 24. A voltage adding circuit 30 admits a pulse voltage generated from the differential amplifier 24 synchronously with the pulse cycle of the pulse voltage generated from the pulse voltage generating circuit 15 and adds a prescribed number of pulses of the pulse voltage to produce an ultimate measured voltage.
    • 本发明涉及一种改进了检测灵敏度和测量精度的非接触式温度计,同时适用于防止热敏电阻元件自身产生热量。 脉冲电压产生电路15产生具有脉搏波高度,脉冲宽度和脉冲周期的矩形波形的脉冲电压,足以使热敏电阻测辐射热计元件的自发热的影响可以忽略不计 热敏电阻测温仪的热容量。 检测电路20承认脉冲电压,产生由与红外线检测热敏电阻发热元件RA的入射红外线的量对应的电阻大小的变化而产生的差分电压,并通过 差分放大器24.电压相加电路30与从脉冲电压产生电路15产生的脉冲电压的脉冲周期同步地允许从差分放大器24产生的脉冲电压,并且增加脉冲电压的规定数量的脉冲以产生 最终测量电压。
    • 29. 发明授权
    • Tunnel transistor
    • 隧道晶体管
    • US5552622A
    • 1996-09-03
    • US493980
    • 1995-06-23
    • Mitsuteru Kimura
    • Mitsuteru Kimura
    • H01L29/68H01L27/088H01L29/739H01L29/872H01L27/01H01L27/12H01L29/76H01L29/94
    • H01L27/088H01L29/7391H01L29/872
    • The present invention is to provide a compact and high speed tunnel transistor having a high input impedance, yet consuming only a small quantity of power. In a tunnel transistor according to the present invention, a gate electrode is provided via an insulating thin film on a Schottky junction which is a junction between a semiconductor and a metallic layer, a p-n.sup.+ junction between semiconductors, or an n-p.sup.+ junction between semiconductors so that an accumulation layer having a high carrier density is formed bear the surface of a semiconductor by adjusting a gate voltage Vg and thus a tunnel junction is formed between this accumulation layer and a metallic layer or a semiconductor having a high carrier density (n.sup.+ or p.sup.+) by adjusting the gate voltage Vg.
    • 本发明的目的是提供一种具有高输入阻抗但又消耗少量功率的紧凑型高速隧道晶体管。 在根据本发明的隧道晶体管中,栅极通过绝缘薄膜提供在肖特基结上,该肖特基结是半导体和金属层之间的连接,半导体之间的p-n +结或n-p +结 在半导体之间形成具有高载流子密度的堆积层,通过调节栅极电压Vg来承受半导体的表面,因此在该积聚层与具有高载流子密度的金属层或半导体之间形成隧道结( n +或p +)。
    • 30. 发明授权
    • Gas detector
    • 气体探测器
    • US4343768A
    • 1982-08-10
    • US171387
    • 1980-07-23
    • Mitsuteru Kimura
    • Mitsuteru Kimura
    • G01N27/04G01N27/12G01N27/16G01N27/06
    • G01N27/12G01N27/16
    • A gas detector of the type using an electric heater in which a substrate consists of an upper film of electrically insulating substance having a resistance to heat and a lower film of substance different from the substance of the upper film, a recess is formed below or under the upper film by removing part of the lower film, and a film of electrically conductive substance is deposited over the bridge of the upper film across the recess in the lower film, thereby providing a heating element characterized in that said heating element consists of a film of a substance having catalytic effects in the presence of a gas to be detected deposited on said electrically conductive substance or a material responsive to a gas to be detected, or consists of said electrically conductive substance having catalytic effects in the presence of a gas to be detected or a substance containing said substance having catalytic effects in the presence of a gas to be detected or a substance responsive to a gas to be detected, and said heating element is exposed to a gas to be detected.
    • 一种使用电加热器的气体检测器,其中基板由具有耐热性的电绝缘物质的上部膜和与上部膜的物质不同的物质的下部膜组成,在下方或下方形成凹部 通过去除下部膜的一部分的上部膜和导电物质膜沉积在上部膜的桥上横跨下部膜中的凹部,由此提供加热元件,其特征在于,所述加热元件由膜 具有催化作用的物质在沉积在所述导电物质上的待检测气体或响应于待检测气体的材料存在时具有催化作用,或由在所述气体存在下具有催化作用的所述导电物质组成 检测到的物质或含有所述物质的物质在待检测气体或响应于气体t的物质的存在下具有催化作用 并且所述加热元件暴露于待检测的气体。