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    • 24. 发明申请
    • NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    • 非易失性半导体存储器件
    • US20130240978A1
    • 2013-09-19
    • US13601372
    • 2012-08-31
    • Masayuki TANAKAKazuhiro Matsuo
    • Masayuki TANAKAKazuhiro Matsuo
    • H01L29/792
    • H01L29/792H01L21/28273H01L27/11521
    • According to one embodiment, a nonvolatile semiconductor memory device has a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge storage film formed on the first insulating film, a second insulating film formed on the charge storage film, and a control electrode formed on the second insulating film. In the nonvolatile semiconductor memory device, the second insulating film has a laminated structure that has a first silicon oxide film, a first silicon nitride film, and a second silicon oxide film, a first atom is provided at an interface between the first silicon oxide film and the first silicon nitride film, and/or at an interface between the second silicon oxide film and the first silicon nitride film, and the first atom is selected from the group consisting of aluminum, boron, and alkaline earth metals.
    • 根据一个实施例,非易失性半导体存储器件具有半导体衬底,形成在半导体衬底上的第一绝缘膜,形成在第一绝缘膜上的电荷存储膜,形成在电荷存储膜上的第二绝缘膜,以及控制 电极形成在第二绝缘膜上。 在非易失性半导体存储器件中,第二绝缘膜具有层叠结构,该叠层结构具有第一氧化硅膜,第一氮化硅膜和第二氧化硅膜,第一原子设置在第一氧化硅膜 和/或在第二氧化硅膜和第一氮化硅膜之间的界面处,并且第一原子选自铝,硼和碱土金属。