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21. 发明申请

US20090319156A1 INTERNAL COMBUSTION ENGINE 审中-公开
标题翻译：内燃机
公开(公告)号：US20090319156A1
公开(公告)日：2009-12-24
申请号：US12485742
申请日：2009-06-16
申请人： Tatsuya Fujikawa , Masahisa Yamakawa , Toshiaki Nishimoto , Ryo Yamamoto
发明人： Tatsuya Fujikawa , Masahisa Yamakawa , Toshiaki Nishimoto , Ryo Yamamoto
IPC分类号： F02D43/00 , F02B31/00 , F02P15/02
CPC分类号： F02B23/104 , F02B31/04 , F02B2023/085 , F02B2023/108 , Y02T10/125
摘要： An internal combustion engine is described herein. The engine may include a combustion chamber having a pair of intake ports arranged at one side, and an exhaust port arranged at the other side. The engine may also include a fuel injector configured to inject fuel into said combustion chamber from a side of said intake ports toward a side of said exhaust port, a variable flow restrictor capable of making flow resistance of said second intake port greater than flow resistance of said first intake port, a first spark plug arranged on a ceiling of the chamber and having its spark gap in the proximity of a center portion of said ceiling, and a second spark plug arranged on said ceiling and having its spark gap which is positioned closer to said first intake port in the axial direction of said crankshaft than said first spark plug.
摘要翻译：这里描述了内燃机。发动机可以包括具有一侧设置的一对进气口的燃烧室和布置在另一侧的排气口。发动机还可以包括燃料喷射器，该燃料喷射器被配置为从所述进气口侧朝向所述排气口的侧面将燃料喷射到所述燃烧室中，所述可变流量限制器能够使所述第二进气口的流动阻力大于流动阻力所述第一进气口，布置在所述室的天花板上并且在所述天花板的中心部分附近具有火花隙的第一火花塞和布置在所述天花板上并具有位于更靠近的火花隙的第二火花塞到所述第一进气口在所述曲轴的轴向方向上比所述第一火花塞。

22. 发明申请

US20090235897A1 INTERNAL COMBUSTION ENGINE OF SPARK-IGNITION DIRECT-INJECTION TYPE AND FUEL INJECTING METHOD THEREOF 有权
标题翻译：火花点火直喷式内燃机及其燃油喷射方法
公开(公告)号：US20090235897A1
公开(公告)日：2009-09-24
申请号：US12410076
申请日：2009-03-24
申请人： Tatsuya Fujikawa , Toshiaki Nishimoto , Masahisa Yamakawa , Kouji Shishime , Kiyotaka Sato
发明人： Tatsuya Fujikawa , Toshiaki Nishimoto , Masahisa Yamakawa , Kouji Shishime , Kiyotaka Sato
IPC分类号： F02B5/00
CPC分类号： F02B23/104 , F02B17/005 , F02B2023/103 , F02B2023/106 , F02B2075/125 , F02D13/0238 , F02M61/1813 , Y02T10/123 , Y02T10/125 , Y02T10/146
摘要： A multi-hole injector directly injects fuel into a combustion chamber. Intake air is introduced into the combustion chamber through intake ports to provide tumble flow in the combustion chamber. A cavity is formed in a part of the top surface of a piston which is eccentric to the exhaust side. In the intake stroke, fuel injection ends in a downstroke of a piston. When the crank angle is 100 degrees after the top dead center in the intake stroke at which the fuel injection ends, a most downward lower spray collides with a part of the top surface of the piston which ranges on the intake side from the edge on the exhaust side of the cavity. A most upward upper spray does not come into contact with a spark plug. Thus, the fuel injection can enhance the tumble flow to promote homogeneous dispersion of fuel-air mixture in the combustion chamber.
摘要翻译：多孔喷射器将燃料直接喷射到燃烧室中。吸入空气通过进气口引入燃烧室，以在燃烧室中提供滚筒流。在与排气侧偏心的活塞的上表面的一部分中形成空腔。在进气冲程中，燃料喷射以活塞的下冲程结束。当燃料喷射结束的进气行程中的上止点之后的曲柄角为100度时，最下面的下喷射与活塞顶表面的一部分在入口侧的边缘上相撞空腔的排气侧。最向上的上喷雾器不会与火花塞接触。因此，燃料喷射可以增强滚筒流动，以促进燃料 - 空气混合物在燃烧室中的均匀分散。

23. 发明申请

US20070056556A1 Combustion chamber structure for sparkignition engine 有权
标题翻译：火花发动机燃烧室结构
公开(公告)号：US20070056556A1
公开(公告)日：2007-03-15
申请号：US11520700
申请日：2006-09-14
申请人： Takashi Yohso , Masahisa Yamakawa , Kouji Shishime , Toshiaki Nishimoto
发明人： Takashi Yohso , Masahisa Yamakawa , Kouji Shishime , Toshiaki Nishimoto
IPC分类号： F02B31/00 , F02P15/02 , F02B23/00
CPC分类号： F02B31/085 , F02B23/08 , F02B23/101 , F02B2023/085 , F02B2031/006 , Y02T10/125 , Y02T10/146
摘要： This invention relates to a combustion chamber structure for a spark-ignition engine, which comprises a combustion chamber defined between a bottom surface of a cylinder head and a top surface of a piston in such a manner that the bottom surface of the cylinder head serves as a ceiling wall thereof, and a spark plug having a sparking end protruding from the ceiling wall into the combustion chamber. In this combustion chamber structure, when the piston is at a top dead center, a principal space of the combustion chamber is comprised of a first combustion space around the sparking end of the spark plug and a second combustion space around a circumference of a cylinder bore. Further, the first combustion space and the second combustion space are communicated with each other through a small interspace zone where an interspace between the ceiling wall and the top surface of the piston is narrowed. The combustion chamber structure makes it possible to increase compression ratio in a practically effective manner.
摘要翻译：本发明涉及一种用于火花点火发动机的燃烧室结构，该燃烧室结构包括燃烧室，该燃烧室限定在气缸盖的底表面和活塞的顶表面之间，使得气缸盖的底表面用作其顶壁和火花塞具有从顶壁向燃烧室突出的火花端。在该燃烧室结构中，当活塞处于上止点时，燃烧室的主要空间由火花塞的火花端周围的第一燃烧空间和围绕气缸孔周围的第二燃烧空间。此外，第一燃烧空间和第二燃烧空间通过在顶壁与活塞顶面之间的间隙变窄的小间隙区域彼此连通。燃烧室结构使得可以以实际有效的方式增加压缩比。

24. 发明授权

US08151762B2 Direct-injection spark-ignition engine 有权
标题翻译：直喷式点火发动机
公开(公告)号：US08151762B2
公开(公告)日：2012-04-10
申请号：US12504445
申请日：2009-07-16
申请人： Toshiaki Nishimoto , Tomomi Watanabe , Yoshiteru Nakayama , Tatsuya Fujikawa , Masahisa Yamakawa
发明人： Toshiaki Nishimoto , Tomomi Watanabe , Yoshiteru Nakayama , Tatsuya Fujikawa , Masahisa Yamakawa
IPC分类号： F02B19/04
CPC分类号： F02B23/104 , F02B2023/103 , Y02T10/125
摘要： Disclosed is a direct-injection spark-ignition engine designed to promote catalyst activation during cold engine operation. A fuel injection timing for a fuel injection period in an compression stroke (second fuel injection period F2) is set to allow a first fuel spray Ga injected from a first spray hole 40a to enter a cavity 34 in a piston crown surface 30, and allow a second fuel spray Gb to impinge against a region of the piston crown surface 30 located closer to an injector than the cavity 34, so as to cause the second fuel spray Gb having a lowered penetration force due to the impingement to be pulled toward the cavity 34 by a negative pressure generated in the cavity 34 as a result of passing of the first fuel spray Ga therethrough. The direct-injection spark-ignition engine can maximally hold an injected fuel spray around a spark plug to reliably stabilize a combustion state in a combustion mode for promoting catalyst activation during cold engine operation, while enhancing combustion efficiency in a homogenous combustion mode during normal engine operation.
摘要翻译：公开了一种直喷式火花点火发动机，设计用于在冷发动机运行期间促进催化剂活化。在压缩行程（第二燃料喷射期间F2）中的燃料喷射期间的燃料喷射正时被设定为允许从第一喷射孔40a喷射的第一燃料喷雾Ga进入活塞冠表面30中的空腔34，并且允许第二燃料喷雾Gb撞击位于比腔34更靠近喷射器的活塞冠表面30的区域，以便使得由于冲击而具有降低的穿透力的第二燃料喷雾Gb被拉向空腔 34由于第一燃料喷雾Ga通过而在空腔34中产生的负压。直喷式火花点火发动机可以最大限度地保持火花塞周围的喷射燃料喷雾，以在燃烧模式下可靠地稳定燃烧状态，以促进冷机发动机运行期间的催化剂活化，同时在正常发动机中提高均质燃烧模式下的燃烧效率操作。

25. 发明授权

US06941905B2 Control unit for spark ignition-type engine 失效
标题翻译：火花点火式发动机控制单元
公开(公告)号：US06941905B2
公开(公告)日：2005-09-13
申请号：US10668962
申请日：2003-09-24
申请人： Mitsuo Hitomi , Kouji Asanomi , Toshiaki Nishimoto , Taketoshi Yamauchi
发明人： Mitsuo Hitomi , Kouji Asanomi , Toshiaki Nishimoto , Taketoshi Yamauchi
IPC分类号： F02B15/00 , F02B1/04 , F02B1/12 , F02B75/12 , F02D9/02 , F02D9/04 , F02D13/02 , F02D21/08 , F02D37/02 , F02D41/00 , F02D41/02 , F02D41/04 , F02D41/30 , F02D41/34 , F02D43/00 , F02D45/00 , F02F1/42 , F02M25/07
CPC分类号： F02D13/0276 , F01L2201/00 , F01L2800/00 , F02B1/04 , F02B1/12 , F02B2075/125 , F02D9/04 , F02D37/02 , F02D41/0002 , F02D41/006 , F02D41/008 , F02D41/028 , F02D41/1454 , F02D41/3023 , F02D41/3035 , F02D2041/002 , F02F1/4214 , F02M26/16 , F02M26/43 , Y02T10/14 , Y02T10/18 , Y02T10/42
摘要： In a partial load range of the engine, control of the flowing state of sucked and discharged gas is executed between a pair of cylinders, an exhaust stroke of one of the cylinders overlapping with an intake stroke of the other, so that burnt gas discharged from preceding cylinders 2A, 2D on the exhaust-stroke side is introduced, in a state where it has been discharged, through an inter-cylindrical gas passage 22 into following cylinders 2B, 2C on the intake stroke side. In a higher load range than the partial load range, control is executed so that a fresh-air introducing valve 18 disposed in a fresh-air introduction passage of the following cylinders 2B, 2C is opened, both the burnt gas and fresh air are introduced into the following cylinders 2B, 2C, and fuel is supplied to conduct combustion in the following cylinders 2B, 2C.
摘要翻译：在发动机的部分负荷范围内，在一对气缸之间执行吸气排出气体的流动状态的控制，其中一个气缸的排气冲程与另一气缸的进气冲程重叠，从而从排气行程侧的前述气缸2A，2D在其排出的状态下通过圆筒状气体通路22被引入到进气行程侧的后续气缸2B，2C。在比部分负荷范围更高的负载范围内，执行控制，使得设置在随后的气缸2B，2C的新鲜空气引入通道中的新鲜空气引入阀18打开，燃烧气体和新鲜空气被引入到下列气瓶2B，2C中，并且供应燃料以在后续的气缸2B，2C中进行燃烧。

26. 发明申请

US20050090058A1 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device 有权
公开(公告)号：US20050090058A1
公开(公告)日：2005-04-28
申请号：US10954102
申请日：2004-09-30
申请人： Tetsuo Adachi , Masataka Kato , Toshiaki Nishimoto , Nozomu Matsuzaki , Takashi Kobayashi , Yoshimi Sudou , Toshiyuki Mine
发明人： Tetsuo Adachi , Masataka Kato , Toshiaki Nishimoto , Nozomu Matsuzaki , Takashi Kobayashi , Yoshimi Sudou , Toshiyuki Mine
IPC分类号： H01M10/0525 , G11C11/56 , G11C16/04 , G11C16/10 , G11C16/34 , G11C27/00 , H01L21/00 , H01L21/28 , H01L21/283 , H01L21/336 , H01L21/8247 , H01L27/105 , H01L27/115 , H01L29/76 , H01L29/78 , H01L29/788 , H01L29/792 , H01L29/94 , H01L31/062 , H01L31/119 , H01M2/16
CPC分类号： H01L21/28273 , G11C11/5628 , G11C16/0466 , G11C16/10 , G11C16/3454 , H01L21/28061 , H01L27/105 , H01L27/115 , H01L27/11519 , H01L27/11526 , H01L27/11529 , H01L27/11536 , H01L27/11546 , H01L29/6659 , H01L29/66825 , H01L29/7833
摘要： A semiconductor device, which ensures device reliability especially in fine regions and enables great capacitance and high-speed operations, has memory cells including, in a first region of a main surface of a semiconductor substrate, a gate insulating film, a floating gate electrode, an interlayer insulating film, a control gate electrode, and source and drain regions of the second conduction type arranged in a matrix, with a shallow isolation structure for isolating the memory cells. When using a shallow structure buried with an insulating film for element isolation, the isolation withstand voltage in fine regions can be prevented from lowering and the variation in threshold level of selective transistors can be reduced. When the memory cells in a memory mat are divided by means of selective transistors, the disturb resistance of the memory cells can be improved.

27. 发明授权

US06857406B2 Valve driving device for an engine 有权
标题翻译：发动机气门驱动装置
公开(公告)号：US06857406B2
公开(公告)日：2005-02-22
申请号：US10668597
申请日：2003-09-24
申请人： Hirokazu Matsuura , Kouji Asanomi , Toshiaki Nishimoto , Taketoshi Yamauchi
发明人： Hirokazu Matsuura , Kouji Asanomi , Toshiaki Nishimoto , Taketoshi Yamauchi
IPC分类号： F01L1/04 , F01L1/047 , F01L1/053 , F01L1/08 , F01L1/14 , F01L13/00
CPC分类号： F01L1/143 , F01L1/047 , F01L1/0532 , F01L1/08 , F01L13/0036 , F01L2107/00
摘要： A valve driving device including a tappet assembly adapted to slide in a tappet guide hole to drive a valve and including a high-speed center tappet and low-speed side tappet; and a high-speed center cam and a low-speed side cam provided corresponding to the center tappet and the side tappet. A depression is formed which is depressed from a base circle to roughly the same profile as a shaft section of the camshaft so that the cam portion over a predetermined angle range where a cam nose section is not formed in the centrally located center cam is smaller than the base circles of the outside located side cams in profile.
摘要翻译：一种阀驱动装置，包括：挺杆组件，其适于在挺杆引导孔中滑动以驱动阀，并且包括高速中心挺杆和低速侧挺杆; 以及与中心挺杆和侧挺杆对应地设置的高速中心凸轮和低速侧凸轮。形成凹部，其从基部圆弧凹陷到与凸轮轴的轴部分大致相同的轮廓，使得在凸轮前端部分没有形成在中心位置的中心凸轮中的预定角度范围的凸轮部分小于外侧定位侧的基座凸轮在轮廓中。

28. 再颁专利

USRE37959E1 Semiconductor integrated circuit device and method of manufacturing the same 有权
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：USRE37959E1
公开(公告)日：2003-01-07
申请号：US09160791
申请日：1998-09-25
申请人： Kazuhiro Komori , Satoshi Meguro , Toshiaki Nishimoto , Hitoshi Kume , Hideaki Yamamoto
发明人： Kazuhiro Komori , Satoshi Meguro , Toshiaki Nishimoto , Hitoshi Kume , Hideaki Yamamoto
IPC分类号： H01L218247
CPC分类号： H01L27/11526 , H01L21/28273 , H01L27/105 , H01L27/11546 , H01L29/42324
摘要： An EEPROM (Electrically Erasable Programmable Read Only Memory) has a structure in which the corners of a floating gate electrode of each memory cell MISFET near the source region thereof are rounded. The EEPROM is manufactured by a method characterized in that the ions of an impurity at a high dose are implanted in self-alignment with the floating gate electrode and control gate electrode of the memory cell MISFET so as to form the source and drain regions thereof, whereupon an oxidizing treatment is carried out.
摘要翻译： EEPROM（电可擦除可编程只读存储器）具有其源极区域附近的每个存储单元MISFET的浮置栅电极的角部为圆形的结构。EEPROM通过以下方法制造，其特征在于，杂质的离子以高剂量注入与存储单元MISFET的浮置栅极电极和控制栅电极自对准，以形成其源极和漏极区域，由此进行氧化处理。

29. 发明授权

US06451643B2 Method of manufacturing a semiconductor device having non-volatile memory cell portion with single transistor type memory cells and peripheral portion with MISFETs 失效
标题翻译：具有具有单晶体管型存储单元的非易失性存储单元部分和具有MISFET的周边部分的半导体器件的制造方法
公开(公告)号：US06451643B2
公开(公告)日：2002-09-17
申请号：US09873451
申请日：2001-06-05
申请人： Kazuhiro Komori , Toshiaki Nishimoto , Satoshi Meguro , Hitoshi Kume , Yoshiaki Kamigaki
发明人： Kazuhiro Komori , Toshiaki Nishimoto , Satoshi Meguro , Hitoshi Kume , Yoshiaki Kamigaki
IPC分类号： H01L218238
CPC分类号： H01L27/105 , G11C16/0416 , H01L27/0688 , H01L27/1052 , H01L27/11526 , H01L27/11546 , H01L29/66659 , H01L29/7835 , H01L29/7885 , H01L29/7886
摘要： A method of manufacturing a semiconductor memory device having nonvolatile memory cells each formed of a MISFET having both a floating gate and a control gate and first and second semiconductor regions. By this method, an impurity, for example, arsenic, is introduced to form both the first and second semiconductor regions but, however, a lower dose of arsenic is introduced in the formation of the second semiconductor region. The first semiconductor region is formed to have a junction depth greater than that of the second semiconductor region, and both the first and second semiconductor regions have portions thereof extending under the floating gate electrode. Carriers stored in the floating gate electrode are transferred between the floating gate electrode and the first semiconductor region by tunneling through the insulating film beneath the floating gate electrode. The method further features the formation of MISFETs of peripheral circuits.
摘要翻译：一种制造具有非易失性存储单元的半导体存储器件的方法，每个半导体存储器单元均由具有浮置栅极和控制栅极以及第一和第二半导体区域的MISFET构成。通过该方法，引入杂质（例如砷）以形成第一和第二半导体区域，但是，在第二半导体区域的形成中引入较低剂量的砷。第一半导体区域形成为具有大于第二半导体区域的结深度的结深度，并且第一和第二半导体区域都具有在浮栅电极下延伸的部分。存储在浮置栅电极中的载体通过隧穿穿过浮栅电极下方的绝缘膜而在浮置栅极电极和第一半导体区域之间传输。该方法还特征在于外围电路的MISFET的形成。

30. 发明授权

US6130841A Semiconductor nonvolatile memory apparatus and computer system using the same 有权
标题翻译：半导体非易失性存储装置及使用其的计算机系统
公开(公告)号：US6130841A
公开(公告)日：2000-10-10
申请号：US432070
申请日：1999-11-02
申请人： Toshihiro Tanaka , Masataka Kato , Osamu Tsuchiya , Toshiaki Nishimoto
发明人： Toshihiro Tanaka , Masataka Kato , Osamu Tsuchiya , Toshiaki Nishimoto
IPC分类号： G11C16/04 , G11C16/28 , G11C16/34 , G11C16/06
CPC分类号： G11C16/3413 , G11C16/0416 , G11C16/28 , G11C16/3404 , G11C16/3409 , G11C16/3459
摘要： After decreasing the threshold voltages of a plurality of memory cells collectively or selectively, the presence or absence of any memory cell of which the threshold voltage has dropped below a predetermined voltage verified collectively for each of memory cell groups connected to word line (low-threshold value verification) , and any memory cell of which the threshold voltage has excessively dropped is selectively written. Also, the well of each of memory cell is formed in the region of an element isolation layer for isolating it from the substrate of a memory apparatus, and a negative voltage is supplied to the memory well distributively with a positive voltage applied as a word line voltage, thus supplying them as erase operation voltages. The absolute value of the memory well voltage is set substantially equal to or lower than the word line voltage for the read operation. Sectors constituting each memory mat includes a sector (selected sector) selected for the erase operation with each word line thereof supplied with a positive voltage, a sector (non-selected sector) not selected for the erase operation with a word line voltage different from a memory well voltage, and further a sector (completely non-selected sector) not selected for the erase operation with a word line voltage equal to the voltage between a source and a drain of the memory cell.
摘要翻译：在集体或选择性地降低多个存储器单元的阈值电压之后，存在或不存在阈值电压已经降低到连接到字线的每个存储器单元组（低阈值）下集中验证的预定电压以下的任何存储单元值验证），并且选择性地写入阈值电压过度下降的任何存储单元。此外，存储单元的阱形成在用于将其与存储装置的基板隔离的元件隔离层的区域中，并且以施加作为字线的正电压将负电压分配地提供给存储器电压，从而将其提供为擦除操作电压。存储器阱电压的绝对值被设定为基本上等于或低于读取操作的字线电压。构成每个存储器垫的扇区包括为其擦除操作选择的扇区（选择的扇区），其每个字线被提供有正电压，未被选择用于擦除操作的扇区（未选择的扇区），字线电压不同于存储器阱电压，以及未被选择用于具有等于存储器单元的源极和漏极之间的电压的字线电压的擦除操作的扇区（完全未选择的扇区）。

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