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21. 发明授权

US6127735A Interconnect for low temperature chip attachment 失效
标题翻译：互连用于低温芯片附件
公开(公告)号：US6127735A
公开(公告)日：2000-10-03
申请号：US710992
申请日：1996-09-25
申请人： Daniel George Berger , Guy Paul Brouillette , David Hirsch Danovitch , Peter Alfred Gruber , Bruce Lee Humphrey , Michael Liehr , William Thomas Motsiff , Carlos Juan Sambucetti
发明人： Daniel George Berger , Guy Paul Brouillette , David Hirsch Danovitch , Peter Alfred Gruber , Bruce Lee Humphrey , Michael Liehr , William Thomas Motsiff , Carlos Juan Sambucetti
IPC分类号： B23K35/26 , H01L21/60 , H05K3/34 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/81 , H05K3/3436 , H05K3/3468 , H01L2224/05571 , H01L2224/05573 , H01L2224/11003 , H01L2224/11822 , H01L2224/13109 , H01L2224/13111 , H01L2224/13609 , H01L2224/81801 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H05K2201/0379 , H05K2201/10992 , H05K2203/0113 , H05K2203/0338 , H05K2203/128 , H05K3/3463 , H05K3/3478 , Y02P70/613
摘要： A method of forming interconnects on an electronic device that can be bonded to another electronic device at a low processing temperature can be carried out by depositing a first interconnect material on the electronic device forming protrusions and then depositing a second interconnect material to at least partially cover the protrusions, wherein the second interconnect material has a lower flow temperature than the first interconnect material. The method is carried out by flowing a molten solder into a mold having microcavities to fill the cavities and then allowed to solidify. The mold is then aligned with a silicon wafer containing chips deposited with high melting temperatures solder bumps such that each microcavity of the mold is aligned with each high melting temperature solder bump on the chip. The aligned mold/wafer assembly is then passed through a reflow furnace to effect the transfer of the low melting temperature solder in the mold cavities onto the tip of the high melting temperature solder bumps on the wafer. A dual metallurgical composition bump is thereby formed by the two different solder alloys.
摘要翻译：可以在能够以低处理温度结合到另一电子设备的电子设备上形成互连的方法可以通过在形成突起的电子设备上沉积第一互连材料，然后沉积第二互连材料至少部分覆盖所述突起，其中所述第二互连材料具有比所述第一互连材料低的流动温度。该方法通过将熔融焊料流入具有微腔的模具中以填充空腔，然后使其固化来进行。然后将模具与包含沉积有高熔点温度焊料凸块的芯片的硅晶片对准，使得模具的每个微腔与芯片上的每个高熔点温度焊料凸块对准。然后将对准的模具/晶片组件通过回流炉，以将模腔中的低熔点焊料转移到晶片上的高熔点温度焊料凸块的尖端上。由此由两种不同的焊料合金形成双金属组合物凸块。

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