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21. 外观设计

USD681554S1 Electrical plug 有权
公开(公告)号：USD681554S1
公开(公告)日：2013-05-07
申请号：US29400270
申请日：2011-08-25
申请人： Michael Ray Nelson , Erik Jeffrey Gouhl , Dai Vo , Yogesh Vitthal Borkar , Ming Tang
设计人： Michael Ray Nelson , Erik Jeffrey Gouhl , Dai Vo , Yogesh Vitthal Borkar , Ming Tang

22. 发明申请

US20120167158A1 SCOPED RESOURCE AUTHORIZATION POLICIES 有权
标题翻译：范围资源授权政策
公开(公告)号：US20120167158A1
公开(公告)日：2012-06-28
申请号：US12978451
申请日：2010-12-24
申请人： Paul Leach , David McPherson , Vishal Agarwal , Mark Fishel Novak , Ming Tang , Ramaswamy Ranganathan , Pranav Kukreja , Andrey Popov , Nir Ben Zvi , Arun K. Nanda
发明人： Paul Leach , David McPherson , Vishal Agarwal , Mark Fishel Novak , Ming Tang , Ramaswamy Ranganathan , Pranav Kukreja , Andrey Popov , Nir Ben Zvi , Arun K. Nanda
IPC分类号： G06F17/00
CPC分类号： G06F21/604 , G06Q10/06
摘要： Resource authorization policies and resource scopes may be defined separately, thereby decoupling a set of authorization rules from the scope of resources to which those rules apply. In one example, a resource includes anything that can be used in a computing environment (e.g., a file, a device, etc.). A scope describes a set of resources (e.g., all files in folder X, all files labeled “Y”, etc.). Policies describe what can be done with a resource (e.g., “read-only,” “read/write,” “delete, if requestor is a member of the admin group,” etc.). When scopes and policies have been defined, they may be linked, thereby indicating that the policy applies to any resource within the scope. When a request for the resource is made, the request is evaluated against all policies associated with scopes that contain the resource. If the conditions specified in the policies apply, then the request may be granted.
摘要翻译：可以单独定义资源授权策略和资源作用域，从而将一组授权规则与这些规则适用的资源范围分离。在一个示例中，资源包括可以在计算环境（例如，文件，设备等）中使用的任何内容。范围描述一组资源（例如，文件夹X中的所有文件，标记为“Y”的所有文件等）。策略描述了资源可以做什么（例如，“只读”，“读/写”，“删除，如果请求者是管理组的成员”等）。当定义了范围和策略时，可以链接它们，从而指示策略适用于范围内的任何资源。当对资源进行请求时，会根据与包含资源的范围相关联的所有策略来评估该请求。如果策略中指定的条件适用，则可以授予请求。

23. 发明授权

US08159025B2 Gate electrode in a trench for power MOS transistors 有权
标题翻译：用于功率MOS晶体管的沟槽中的栅电极
公开(公告)号：US08159025B2
公开(公告)日：2012-04-17
申请号：US12683014
申请日：2010-01-06
申请人： Ming Tang , Shih-Ping Chiao
发明人： Ming Tang , Shih-Ping Chiao
IPC分类号： H01L29/66 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/0653 , H01L29/0696 , H01L29/0878 , H01L29/42368 , H01L29/456 , H01L29/66734 , H01L29/7809
摘要： A trench-typed power MOS transistor comprises a trench-typed gate area, which includes a gate conductor and an isolation layer. A thin sidewall region of the isolation layer is formed between the gate conductor and a well region. A thick sidewall region of the isolation layer is formed between the gate conductor and a double diffusion region. A thick bottom region of the isolation layer is formed between the gate conductor and a deep well region.
摘要翻译：沟槽型功率MOS晶体管包括沟槽型栅极区域，其包括栅极导体和隔离层。在栅极导体和阱区之间形成隔离层的薄壁侧壁区域。隔离层的厚侧壁区形成在栅极导体与双扩散区之间。在栅极导体和深阱区之间形成隔离层的厚底部区域。

24. 发明申请

US20090023625A1 Detergent composition containing suds boosting co-surfactant and suds stabilizing surface active polymer 审中-公开
标题翻译：洗涤剂组合物含有增泡助表面活性剂和泡沫稳定表面活性聚合物
公开(公告)号：US20090023625A1
公开(公告)日：2009-01-22
申请号：US12214874
申请日：2008-06-23
申请人： Ming Tang , Yongmei Sun , Kenneth Nathan Price , Suxuan Gong , Sen Liu , Stacie Ellen Hecht , Mark Robert Sivik , Peng Yan
发明人： Ming Tang , Yongmei Sun , Kenneth Nathan Price , Suxuan Gong , Sen Liu , Stacie Ellen Hecht , Mark Robert Sivik , Peng Yan
IPC分类号： C11D7/42 , C11D3/34
CPC分类号： C11D3/0094 , C11D1/146 , C11D1/29 , C11D1/37 , C11D1/65 , C11D1/83 , C11D1/86 , C11D1/94 , C11D3/222 , C11D3/225 , C11D3/37 , C11D3/3788
摘要： A detergent composition having improved sudsing profile comprising 0.2% to 6% by weight of a suds boosting co-surfactant having the formula R—O—(CH2CH2O)nSO3−M+, wherein R is a branched or unbranched alkyl group having 8 to 16 carbon atoms, n is an integer from 0 to 3, M is a cation of alkali metal, alkaline earth metal or ammonium; 0.01% to 5% by weight of a surface active polymer having the properties: (i) the surface tension of a 39 ppm polymer solution in distilled water is from 40 mN/m to 65 mN/m as measured at 25° C. by a tensiometer; and (ii) the viscosity of a 500 ppm polymer solution in distilled water is from 0.0009 to 0.003 Pa·S as measured at 25° C. by a rheometer; and 6% to 15% by weight of a main surfactant system. The total surfactant level in the detergent composition is less than 20% and the phosphate and/or aluminosilicate builder level in the detergent composition is less than 15% by weight.
摘要翻译：具有改善的起泡曲线的洗涤剂组合物，其包含0.2重量％至6重量％的具有式RO-（CH 2 CH 2 O）n SO 3 -M +的增泡助剂，其中R是具有8至16个碳原子的支链或非支链烷基， n为0〜3的整数，M为碱金属，碱土金属或铵的阳离子; 0.01重量％至5重量％的表面活性聚合物具有以下性质：（i）在25℃下测定的39ppm聚合物溶液在蒸馏水中的表面张力为40mN / m至65mN / m，由张力计和（ii）在25℃下用流变仪测得的500ppm聚合物溶液在蒸馏水中的粘度为0.0009至0.003Pa.S; 和6重量％至15重量％的主表面活性剂体系。洗涤剂组合物中的总表面活性剂含量小于20％，洗涤剂组合物中的磷酸盐和/或硅铝酸盐助洗剂水平小于15重量％。

25. 发明授权

US07445995B2 Flash memory structure and fabrication method thereof 有权
标题翻译：闪存结构及其制造方法
公开(公告)号：US07445995B2
公开(公告)日：2008-11-04
申请号：US11531954
申请日：2006-09-14
申请人： Ming Tang
发明人： Ming Tang
IPC分类号： H01L21/336
CPC分类号： H01L29/66825 , H01L21/28273 , H01L27/115 , H01L27/11553 , H01L29/7885
摘要： A flash memory structure comprises a semiconductor substrate, a source region, a drain region, a first insulating dielectric layer, a floating gate, a second insulating dielectric layer, and a control gate. The semiconductor substrate has a first top surface and a second top surface that is lower than the first top surface. The source region and the drain region are respectively in the second top surface and the first top surface of the semiconductor substrate, and the semiconductor substrate connecting the source region and the drain region is a vertical channel region. The whole channel region is covered by the first insulating dielectric layer, the floating gate, the second insulating dielectric layer, and the control gate in turn.
摘要翻译：闪存结构包括半导体衬底，源极区，漏极区，第一绝缘介电层，浮栅，第二绝缘介质层和控制栅。半导体衬底具有比第一顶表面低的第一顶表面和第二顶表面。源极区域和漏极区域分别位于半导体衬底的第二顶表面和第一顶表面中，并且连接源极区域和漏极区域的半导体衬底是垂直沟道区域。整个通道区域依次由第一绝缘介电层，浮置栅极，第二绝缘介电层和控制栅极覆盖。

26. 发明申请

US20070092752A1 Branched phenylene-terminated thiophene oligomers 有权
标题翻译：支链亚苯基封端的噻吩低聚物
公开(公告)号：US20070092752A1
公开(公告)日：2007-04-26
申请号：US11257902
申请日：2005-10-25
申请人： Ashok Maliakal , Ming Tang
发明人： Ashok Maliakal , Ming Tang
IPC分类号： C08F297/02 , B32B19/00
CPC分类号： C08G61/126 , H01L51/0095 , H01L51/0541 , H01L51/0566
摘要： A composition comprising a plurality of molecules. Each of the molecules has a core comprising at least one aromatic ring and at least three pendant arms chemically bonded to the core. The pendant arms comprise a phenylene-terminated thiophene oligomer.
摘要翻译：包含多个分子的组合物。每个分子具有包含至少一个芳族环的核心和至少三个化学键合到核心上的侧挂臂。侧链包含亚苯基封端的噻吩低聚物。

27. 发明授权

US4833836A Process for grinding a gear tooth blank to form an involute gear tooth 失效
标题翻译：用于研磨齿轮齿形坯以形成渐开线齿轮齿的工艺
公开(公告)号：US4833836A
公开(公告)日：1989-05-30
申请号：US80481
申请日：1987-07-31
申请人： Ming Tang
发明人： Ming Tang
IPC分类号： B23F5/06
CPC分类号： B23F5/06
摘要： A process for grinding a gear tooth blank to form an involute gear tooth includes the steps: setting a predetermined cutting rate which fails to result in burning between a grinding wheel and the gear tooth blank; determining the area of the tooth face of the gear tooth blank to be removed for respective grinding strokes in accordance with the predetermined cutting rate so that the metal removal amount of respective grinding strokes approaches to a constant except that the metal removal amount of the last grinding stroke may be smaller than the constant; and effecting the relative involute generating movement between the gear tooth blank and the grinding wheel in accordance with the respective areas of the tooth face to be removed for removing the metal within the respective areas from the gear tooth blank in a step-by-step manner to form an involute gear tooth.
摘要翻译：用于研磨齿轮坯料以形成渐开线齿轮齿的方法包括以下步骤：设定不能在砂轮和齿轮齿坯之间燃烧的预定切削速度; 根据预定的切割速度确定要除去的齿轮齿的齿面的面积，使得各研磨冲程的金属去除量接近常数，除了最后研磨的金属去除量中风可能小于常数; 并且根据要移除的齿面的相应区域来实现齿轮齿坯和砂轮之间的相对渐开线产生运动，以一步一步的方式从齿轮齿坯除去相应区域内的金属以形成渐开线齿轮齿。

28. 发明授权

US12044085B1 Integrated multi-slip sidetracking setting device for ultra-deep well 有权
公开(公告)号：US12044085B1
公开(公告)日：2024-07-23
申请号：US18633020
申请日：2024-04-11
申请人： Ming Tang
发明人： Ming Tang , Shuangning Wang , Yadong Jing , Shiming He , Yuemiao Zhou
IPC分类号： E21B23/01 , E21B7/06
CPC分类号： E21B23/01 , E21B7/06
摘要： An integrated multi-slip sidetracking setting device for an ultra-deep well, the central shaft is arranged above the pressing plate and supported by the pressing plate, and the pressing plate is supported by the stable base below and can move up and down, so that the central shaft and the pressing plate can synchronously move up and down; the slip can radially extend out of the side surface of the housing of the setting device under the driving of the central shaft coaxially arranged in the setting device, when the central shaft is fixed, the slip sheet is positioned outside the housing, the adjusting plate is arranged below the pressing plate. The internal structure of the present invention has lower complexity, higher robustness and greater setting force, thereby reducing the slippage risk of the setting device used for window sidetracking during the window sidetracking process.

29. 发明授权

US08211766B2 Method of fabricating a trench power MOS transistor 有权
标题翻译：制造沟槽功率MOS晶体管的方法
公开(公告)号：US08211766B2
公开(公告)日：2012-07-03
申请号：US13339841
申请日：2011-12-29
申请人： Ming Tang , Shih-Ping Chiao
发明人： Ming Tang , Shih-Ping Chiao
IPC分类号： H01L21/336 , H01L29/66
CPC分类号： H01L29/7813 , H01L29/0653 , H01L29/0696 , H01L29/0878 , H01L29/42368 , H01L29/456 , H01L29/66734 , H01L29/7809
摘要： A trench-typed power MOS transistor comprises a trench-typed gate area, which includes a gate conductor and an isolation layer. A thin sidewall region of the isolation layer is formed between the gate conductor and a well region. A thick sidewall region of the isolation layer is formed between the gate conductor and a double diffusion region. A thick bottom region of the isolation layer is formed between the gate conductor and a deep well region.
摘要翻译：沟槽型功率MOS晶体管包括沟槽型栅极区域，其包括栅极导体和隔离层。在栅极导体和阱区之间形成隔离层的薄壁侧壁区域。隔离层的厚壁侧区域形成在栅极导体与双扩散区域之间。在栅极导体和深阱区之间形成隔离层的厚底部区域。

30. 发明申请

US20110081388A1 Detergent Composition 审中-公开
标题翻译：洗涤剂组合物
公开(公告)号：US20110081388A1
公开(公告)日：2011-04-07
申请号：US12899649
申请日：2010-10-07
申请人： Hiroshi Oh , Valerie Jean Bradford , Faiz Fiesal Sherman , Tim Bates , Vladimir Gartstein , Ming Tang
发明人： Hiroshi Oh , Valerie Jean Bradford , Faiz Fiesal Sherman , Tim Bates , Vladimir Gartstein , Ming Tang
IPC分类号： A61K8/02 , C11D17/00 , A61Q11/00 , A61K8/73 , A61K8/81 , A61K8/92
CPC分类号： C11D17/06 , C11D3/0094
摘要： A detergent composition having from 1% to 50% by weight of anionic surfactant and from 0.1% to 30% by weight of sudsing particles. The sudsing particles have: an average per number length of from 50 nm to 50 μm, an average per number width of from 1 nm to 500 nm, an average per number ratio length/width from 1.5 to 1000, and an hydrophobicity measured by contact angle in the range of from 30° to 100°. The weight ratio of the total amount of anionic surfactant to the total amount of sudsing particles is from 0.05 to 20.
摘要翻译：具有1重量％至50重量％阴离子表面活性剂和0.1重量％至30重量％起泡颗粒的洗涤剂组合物。起泡粒子的平均数量为50nm〜50μm，平均每个数量的宽度为1nm〜500nm，平均每个数量的长度/宽度为1.5〜1000，以及通过接触测定的疏水性角度范围为30°至100°。阴离子表面活性剂的总量与起泡颗粒总量的重量比为0.05至20。

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