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21. 发明授权

US06005817A Method for parallel writing and reading of data in an optical memory, a writing/reading device for use by the method and uses of the method and the writing/reading device 失效
标题翻译：用于并行写入和读取光学存储器中的数据的方法，用于通过该方法和该方法和写入/读取装置的使用的写入/读取装置
公开(公告)号：US06005817A
公开(公告)日：1999-12-21
申请号：US981661
申请日：1998-01-08
申请人： Hans Gude Gudesen , Per-Erik Nordal
发明人： Hans Gude Gudesen , Per-Erik Nordal
IPC分类号： G11C13/04 , G11C7/00
CPC分类号： G11C7/005
摘要： In a method for parallel writing and reading of data in an optical memory, the optical memory includes one or more microlenses for accessing a memory medium, individually addressable elements arranged in one or two-dimensional matrices in a write/read device are activated. The activation of an element physically influences one or more localized areas in a data carrying layer in the memory for writing and reading of data carrying structures in the localized area. Writing and reading is thus performed on the basis of a relationship between the geometric location of the element in the matrix and the position of the localized area(s) in the data carrying layer of the memory. A write/read device includes individually addressable elements which are arranged in one or two-dimensional matrices, the addressable element being arranged to be activated in order to physically influence one or more of the above-mentioned localized areas. Use for such a configuration includes, for example, writing and reading in optical memories which consist of 1-100 microlenses with associated data carrying layers and in optical memories which consist of a transparent spherical particle having a transparent layer to which is applied a data carrying film arranged on one side thereof.
摘要翻译： PCT No.PCT / NO96 / 00187 Sec。 371日期1998年1月8日 102（e）1998年1月8日PCT PCT 1996年7月18日PCT公布。公开号WO97 / 04448 日期1997年2月6日在一种用于并行写入和读取光学存储器中的数据的方法中，光学存储器包括用于访问存储介质的一个或多个微透镜，在写入/读取中布置在一维或二维矩阵中的单独可寻址元件设备已激活。元件的激活物理地影响存储器中的数据承载层中的一个或多个局部区域，用于在局部区域中写入和读取数据承载结构。因此，基于矩阵中的元素的几何位置与存储器的数据承载层中的局部区域的位置之间的关系来执行写入和读取。写/读装置包括以一维或二维矩阵排列的单独可寻址元件，可寻址元件被布置为被激活以物理地影响一个或多个上述局部区域。用于这样的配置包括例如在具有相关联的数据承载层的1-100个微透镜的光学存储器中的写入和读取以及由具有透明层的透明球形颗粒组成的光学存储器中，胶片布置在其一面。

22. 发明授权

US06878980B2 Ferroelectric or electret memory circuit 有权
标题翻译：铁电或驻极体记忆电路
公开(公告)号：US06878980B2
公开(公告)日：2005-04-12
申请号：US10301790
申请日：2002-11-22
申请人： Hans Gude Gudesen , Per-Erik Nordal
发明人： Hans Gude Gudesen , Per-Erik Nordal
IPC分类号： G11C11/22 , H01L27/10 , H01L27/115 , H01L29/76
CPC分类号： H01L27/101 , G11C11/22 , H01L27/11502
摘要： A ferroelectric or electret memory circuit, particularly a ferroelectric or electret memory circuit with improved fatigue resistance, including a ferroelectric or electret memory cell with a polymer or oligomer memory material contacting first and second electrodes, at least one of the electrodes is comprised of at least one functional material capable of physical and/or chemical bulk incorporation of atomic or molecular species contained in either the electrode or the memory material and displaying a propensity for migrating in the form of mobile charged and/or neutral particles between an electrode and a memory material, something which can be detrimental to both. A functional material with the above-mentioned properties shall serve to offset any adverse effect of a migration of this kind, leading to an improvement in the fatigue resistance of the memory cell. The memory circuit being used in a matrix-addressable memory device where the memory cells are formed in distinct portions in a global layer of a ferroelectric or electret thin-film memory material, particularly a polymer material.
摘要翻译：铁电或驻极体记忆电路，特别是具有改善的耐疲劳性的铁电或驻极体记忆电路，包括具有与第一和第二电极接触的聚合物或低聚物记忆材料的铁电或驻极体记忆体，至少一个电极至少包括一种功能材料，其能够物理和/或化学地掺入包含在电极或记忆材料中的原子或分子物质，并且显示在电极和记忆材料之间以移动带电和/或中性粒子的形式迁移的倾向可能对两者都有害的东西。具有上述性能的功能材料应用于抵消这种迁移的任何不利影响，导致记忆单元的耐疲劳性的提高。存储器电路用在矩阵寻址存储器件中，其中存储器单元形成在铁电或驻极体薄膜存储器材料，特别是聚合物材料的全局层中的不同部分中。

23. 发明授权

US06776806B2 METHOD FOR GENERATING ELECTRICALLY CONDUCTING AND/OR SEMICONDUCTING STRUCTURES IN TWO OR THREE DIMENSIONS, A METHOD FOR ERASING THE SAME STRUCTURES AND AN ELECTRIC FIELD GENERATOR/MODULATOR FOR USE WITH THE METHOD FOR GENERATING 失效
标题翻译：用于在两个或三个尺寸上产生电导体和/或半导体结构的方法，用于消除相同结构的方法和用于生成方法的电场发生器/调制器
公开(公告)号：US06776806B2
公开(公告)日：2004-08-17
申请号：US09978043
申请日：2001-10-17
申请人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
发明人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
IPC分类号： H01L21306
CPC分类号： H01L51/0001 , H01L21/768 , H01L21/76888 , H01L21/76894 , H01L21/8221 , H01L51/0024 , H01L2924/0002 , Y10T29/41 , H01L2924/00
摘要： A method for generating electrically conducting and/or semiconducting structures in three dimensions in a matrix that includes two or more materials in spatially separated material structures is disclosed. An electric field is applied to the separate material structure and the field is modulated spatially according to a protocol. The protocol represents a predetermined pattern of electrically conducting and/or semiconducting structures that are generated in the material structure in response to the field. The matrix composed by the material structures includes structures of this kind in three dimensions.
摘要翻译：公开了一种用于在包括空间分离的材料结构中的两种或更多种材料的基体中产生三维导电和/或半导体结构的方法。电场被施加到单独的材料结构，并且根据协议对场进行空间调制。该协议表示响应于场而在材料结构中产生的导电和/或半导体结构的预定图案。由材料结构构成的矩阵在三维中包括这种结构。

24. 发明授权

US06724511B2 Matrix-addressable optoelectronic apparatus and electrode means in the same 失效
标题翻译：矩阵寻址光电子器件和电极装置相同
公开(公告)号：US06724511B2
公开(公告)日：2004-04-20
申请号：US10292661
申请日：2002-11-13
申请人： Hans Gude Gudesen , Geirr I. Leistad , Per-Erik Nordal
发明人： Hans Gude Gudesen , Geirr I. Leistad , Per-Erik Nordal
IPC分类号： G02F100
CPC分类号： G11C11/42 , G02F1/134336 , H01L27/156 , H01L27/307 , H01L27/3281 , H01L2251/5392
摘要： In a matrix-addressable optoelectronic apparatus which includes a functional medium in the form of an optoelectronically active material provided in a global layer in sandwich between a first and second electrode with parallel strip-like electrodes wherein the electrodes of the second electrode are oriented at an angle to the electrodes of the first electrode, functional elements are formed in the active material where respective electrodes overlap and correspond to optically active pixels in a display device or pixels in an optical detector, depending upon the active material used. In each of the first and second electrode, the electrodes are provided in a dense parallel configuration and mutually insulated by a thin film with a thickness that is only a fraction of the width of the electrodes.
摘要翻译：在一种矩阵寻址光电子装置中，该光电子装置包括在具有平行条状电极的第一和第二电极之间夹层的全局层中设置为光电活性材料形式的功能介质，其中第二电极的电极定向为取决于所使用的活性材料，在活性材料中形成功能元件，其中各个电极重叠并对应于显示装置中的光学有源像素或光学检测器中的像素。在第一和第二电极中的每一个中，电极以致密的平行构造设置，并且通过薄膜相互绝缘，厚度仅为电极宽度的一部分。

25. 发明授权

US06403396B1 Method for generation of electrically conducting or semiconducting structures in three dimensions and methods for erasure of the same structures 失效
标题翻译：用于在三维中产生导电或半导体结构的方法以及用于擦除结构的方法
公开(公告)号：US06403396B1
公开(公告)日：2002-06-11
申请号：US09381995
申请日：1999-09-28
申请人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
发明人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
IPC分类号： H01L5140
CPC分类号： H01L51/0001 , H01L21/768 , H01L21/76888 , H01L21/76894 , H01L21/8221 , H01L51/0024 , H01L2924/0002 , Y10T29/41 , H01L2924/00
摘要： Electrically conducting and/or semiconducting structures are generated in three dimensions in a composite matrix including two or more materials provided in spatially separate and homogenous material structures. Materials undergo specific physical and/or chemical changes causing transition from electrically non-conducing to electrically conducting and semiconducting state. The material structures are radiated with a given intensity or frequency characteristic adapted to the specific response of the material. Spatially modulating the radiation according to a protocol representing a pattern of electrically conducing and semiconducting structures in the relevant material structures generates the two dimensional electrically conducting and semiconducting structures in the material structure. The composite matrix is provided with electrically conducting and semiconducting structures in three dimensions. Spectral ranges of the radiation include gamma, x-ray, ultraviolet, visible light, inferred, and microwave. Particle radiation used for irradiation includes elementary particles including protons, neutrons, electrons, ions, molecules, and material aggregates.
摘要翻译：导电和/或半导体结构在三维生成复合基质中，包括在空间上分离和均匀的材料结构中提供的两种或多种材料。材料经历特定的物理和/或化学变化，导致从电导通到导电和半导体状态的转变。材料结构以适合材料的特定响应的给定强度或频率特性辐射。根据表示相关材料结构中导电和半导体结构的图案的协议对辐射进行空间调制，在材料结构中产生二维导电和半导体结构。复合矩阵在三维空间中提供导电和半导体结构。辐射的光谱范围包括γ，X射线，紫外线，可见光，推测和微波。用于照射的粒子辐射包括包括质子，中子，电子，离子，分子和材料聚集体的基本粒子。

26. 发明授权

US6005791A Optical logic element and optical logic device 失效
标题翻译：光逻辑元件和光逻辑器件
公开(公告)号：US6005791A
公开(公告)日：1999-12-21
申请号：US11522
申请日：1998-03-02
申请人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
发明人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
IPC分类号： G02F3/00 , G02F3/02 , G11C7/00 , G11C11/56 , G11C13/00 , G11C13/02 , G11C13/04
CPC分类号： G11C13/0014 , B82Y10/00 , G02F3/02 , G11C11/5664 , G11C13/00 , G11C13/0016 , G11C13/04 , G11C7/005
摘要： Addressable optical logic elements contain an optical memory substance, wherein, under the influence of an impressed magnetic, electromagnetic or electrical field or supplied energy, the memory substance can transfer from one physical or chemical state to a second physical or chemical state, wherein a physical or chemical state is assigned a specific logic value, and wherein a change in the logic element's physical or chemical state causes a change in the logic value and is implemented by the logic element being accessed and addressed magnetically, electromagnetically, electrically or optically for writing, reading, storing, erasing and switching of an assigned logic value.The optical logic device is especially usable for storing data or performing logic and arithmetic operations, wherein the device includes a plurality of optical logic elements, wherein the optical logic elements particularly are multistate, multistable optical logic elements, and even more particularly proximity-addressable optical logic elements, including an optical memory substance, wherein, under the influence of an impressed magnetic, electromagnetic or electrical field or supplied energy, the memory substance can transfer from one physical or chemical state to a second physical or chemical state, wherein a physical or chemical state is assigned a specific logic value, and wherein a change in the logic element's physical or chemical state causes a change in the logic value and is implemented by the logic element being accessed and addressed magnetically, electromagnetically, electrically or optically for writing, reading, storing, erasing and switching of an assigned logic value.
摘要翻译： PCT No.PCT / NO97 / 00154 Sec。 371日期1998年3月2日 102（e）1998年3月2日PCT 1997年6月12日PCT公布。公开号WO97 / 48009 日期1997年12月18日适用的光学逻辑元件包含光学记忆物质，其中在受到外加的磁场，电磁场或电场或供应的能量的影响下，记忆物质可以从一个物理或化学状态转移到第二物理或化学状态，其中物理或化学状态被分配特定逻辑值，并且其中所述逻辑元件的物理或化学状态的变化导致所述逻辑值的改变，并且被所述逻辑元件实现，并被磁性地，电磁地，电或光学地用于写入，读取，存储，擦除和切换分配的逻辑值。光学逻辑器件特别可用于存储数据或执行逻辑和算术运算，其中该器件包括多个光学逻辑元件，其中光学逻辑元件特别是多状态，多态光学逻辑元件，甚至更具体地是接近寻址光学逻辑元件，包括光学记忆物质，其中在受到外加的磁场，电磁场或电场或所提供的能量的影响下，存储物质可以从一个物理或化学状态转移到第二物理或化学状态，其中物理或化学状态被分配一个特定的逻辑值，并且其中逻辑元件的物理或化学状态的改变导致逻辑值的变化，并且被逻辑元件实现，被逻辑元件被磁性，电磁学，电学地或光学地用于写入，读取，存储，擦除和切换分配的逻辑值。

27. 发明授权

US07248524B2 Operating temperature optimization in a ferroelectric or electret memory 失效
标题翻译：在铁电或驻极体记忆中的工作温度优化
公开(公告)号：US07248524B2
公开(公告)日：2007-07-24
申请号：US11168375
申请日：2005-06-29
申请人： Per-Erik Nordal , Geirr I. Leistad , Per Bröms , Hans Gude Gudesen
发明人： Per-Erik Nordal , Geirr I. Leistad , Per Bröms , Hans Gude Gudesen
IPC分类号： G11C7/04
CPC分类号： G11C29/021 , G11C11/22 , G11C29/02 , G11C29/028 , G11C2029/5002
摘要： In a heating and temperature control system for a data storage apparatus comprising at least one matrix-addressable ferroelectric or electret memory device, Joule heating means are provided in the memory device, a temperature determining means is connected with controller circuitry and the controller circuitry is connected with an external power supply, which controlled by the former powers the Joule heating means to achieve a selected operating temperature. In a method for operating the heating and temperature control system an ambient or instant temperature of the memory device is determined and compared with the set nominal optimal temperature, and the difference between these temperatures is used in a predefined algorithm for establishing control parameters for the application of power to the Joule heating means to achieve the selected operating temperature in the memory device during an addressing operation thereto.
摘要翻译：在包括至少一个可矩阵寻址的铁电或驻极体存储装置的数据存储装置的加热和温度控制系统中，在存储装置中提供焦耳加热装置，温度确定装置与控制器电路连接，并且控制器电路被连接具有外部电源，由前者的焦炭控制，焦耳加热意味着实现选定的工作温度。在用于操作加热和温度控制系统的方法中，确定存储器件的环境温度或即时温度并将其与设定的标称最佳温度进行比较，并且在用于建立应用的控制参数的预定义算法中使用这些温度之间的差异的焦耳加热装置的功率，以在其寻址操作期间实现存储装置中的选定的工作温度。

28. 发明授权

US07126176B2 Memory cell 失效
标题翻译：存储单元
公开(公告)号：US07126176B2
公开(公告)日：2006-10-24
申请号：US10504860
申请日：2003-02-11
申请人： Hans Gude Gudesen , Per-Erik Nordal
发明人： Hans Gude Gudesen , Per-Erik Nordal
IPC分类号： H01L29/76
CPC分类号： H01L29/8615 , B82Y10/00 , G11C11/22 , H01L27/11502
摘要： In a ferroelectret or electret memory cell a polymeric memory material is a blend of two or more polymeric materials, the polymeric material being provided contacting first and second electrodes. Each electrode is a composite multilayer having a first highly conducting layer and a conducting polymer layer, the latter forming a contact between the former and the memory material.
摘要翻译：在铁电或驻极体记忆体中，聚合物记忆材料是两种或更多种聚合物材料的混合物，所述聚合物材料与第一和第二电极接触。每个电极是具有第一高导电层和导电聚合物层的复合多层，后者形成前者和记忆材料之间的接触。

29. 发明授权

US06937499B2 Non-destructive readout 失效
标题翻译：无损读出
公开(公告)号：US06937499B2
公开(公告)日：2005-08-30
申请号：US10468888
申请日：2002-02-15
申请人： Per-Erik Nordal , Hans Gude Gudesen , Geirr I. Leistad
发明人： Per-Erik Nordal , Hans Gude Gudesen , Geirr I. Leistad
IPC分类号： G11C7/12 , G11C11/16 , G11C11/22 , G11C11/401
CPC分类号： G11C11/22 , G11C11/16
摘要： In a method for determining the logic state of memory cells in a passive matrix-addressable data storage device with word and bit lines, components of current response are detected and correlated with a probing voltage, and a time-dependent potential is applied on selected word and bit lines or groups thereof, said potentials being mutually coordinated in magnitude and time such that the resulting voltages across all or some of the non-addressed cells at the crossing points between inactive word lines and active bit lines are brought to contain only negligible voltage components that are temporally correlated with the probing voltage. A first apparatus according to the invention for performing the method provides sequential readout of all memory cells on an active word line (AWL) by means of detection circuits (3; 4). An active word line (AWL) is selected by a multiplexer (7), while inactive word lines (IWL) are clamped to ground during readout. A second apparatus for performing the method is rather similar, but has only a single detection circuit (3, 4). An active word line (AWL) is selected by multiplexer (7) and a bit line (ABL) is selected by a multiplexer (9) provided between one end of the bit lines (BL) and the input of the detection circuit (3, 4), while inactive word and bit lines (IWL; IBL) are clamped to ground during readout.
摘要翻译：在确定具有字和位线的无源矩阵可寻址数据存储设备中的存储器单元的逻辑状态的方法中，检测电流响应的分量并与探测电压相关联，并且将时间依赖电位施加到所选择的字所述电位在幅度和时间上相互协调，使得在非活动字线和有源位线之间的交叉点上的所有或一些非寻址单元的结果电压仅被包含可忽略的电压与探测电压暂时相关的分量。根据本发明的用于执行该方法的第一装置通过检测电路（3; 4）提供有源字线（AWL）上的所有存储单元的顺序读出。有源字线（AWL）由多路复用器（7）选择，而无效字线（IWL）在读出期间被钳位到地。用于执行该方法的第二装置相当类似，但是仅具有单个检测电路（3,4）。有源字线（AWL）由多路复用器（7）选择，位线（ABL）由设在位线（BL）的一端和检测电路（3）的输入端之间的多路复用器（9）选择， 4），而无效字和位线（IWL; IBL）在读出期间被钳位到地。

30. 发明授权

US06894392B1 Scaleable integrated data processing device 失效
标题翻译：可扩展的集成数据处理设备
公开(公告)号：US06894392B1
公开(公告)日：2005-05-17
申请号：US09463900
申请日：1999-06-02
申请人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
发明人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad
IPC分类号： G06F1/16 , G11C17/00 , H01L21/768 , H01L21/822 , H01L21/98 , H01L25/065 , H01L25/07 , H01L25/18 , H01L27/00 , H01L27/10 , H01L51/40 , H01L23/48
CPC分类号： H01L21/02686 , G11C5/02 , G11C17/06 , H01L21/02532 , H01L21/02689 , H01L21/2026 , H01L21/768 , H01L21/76888 , H01L21/76894 , H01L21/8221 , H01L27/0688 , H01L27/1021 , H01L27/105 , H01L27/1052 , H01L27/108 , H01L27/11 , H01L27/11502 , H01L51/0001 , H01L51/0024 , H01L2924/0002 , H01L2924/00
摘要： A scaleable integrated data processing device, particularly a microcomputer, comprises a processing unit with one or more processors and a storage unit with one or more memories. The data processing device is provided on a carrier substrate (S) and comprises mutually adjacent substantially parallel layers (P, M, MP) stacked up on each other, the processing unit and the storage unit being provided in one or more such layers and the separate layers formed with a selected number of processors and memories in selected combinations. In each layer are provided horizontal electrical conducting structures which constitute electrical internal connections in the layer and besides each layer comprises further electrical conducting structures which provide electrical connections to other layers and to the exterior of the data processing device. The integrated data processing device has a scaleable architecture, such that it in principle can be configured with an almost unlimited processor and memory capacity. Particularly can the data processing device implement various forms of scaleable parallel architectures integrated with optimal interconnectivity in three dimensions.
摘要翻译：可扩展集成数据处理装置，特别是微型计算机，包括具有一个或多个处理器的处理单元和具有一个或多个存储器的存储单元。数据处理装置设置在载体基板（S）上并且包括相互叠放的彼此相邻的基本上平行的层（P，M，MP），处理单元和存储单元设置在一个或多个这样的层中，并且以选定的组合形式具有选定数量的处理器和存储器的分离层。在每个层中提供水平导电结构，其构成该层中的电内部连接，而且每个层包括提供与其它层的电连接以及数据处理装置的外部的电连接。集成数据处理设备具有可扩展的架构，原则上可以配置几乎无限的处理器和存储器容量。特别地，数据处理设备可以实现在三维中集成最佳互连性的各种形式的可扩展并行架构。

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