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    • 24. 发明授权
    • Magnetostrictive/electrostrictive thin film memory
    • 磁致伸缩/电致伸缩薄膜记忆
    • US5239504A
    • 1993-08-24
    • US684635
    • 1991-04-12
    • Michael J. BradyStephane S. DanaRichard J. Gambino
    • Michael J. BradyStephane S. DanaRichard J. Gambino
    • G11B11/10G11B5/00G11B5/49G11B11/105G11B11/11G11C11/14
    • G11B5/00G11B11/10504G11B11/11G11C11/14G11B5/4907G11B5/4938
    • A data storage system is described which includes a magnetostrictive, anisotropic, ferromagnetic film whose domains exhibit a preferred orientation and are initially poled in one direction along the preferred orientation. A field is applied in opposition to the one direction, the field being insufficient to cause a switching of the poled domains. An electrostrictive film is placed in contact with the ferromagnetic film and a writing system is provided to actuate the electrostrictive film to impart stresses to the ferromagnetic film at selected locations. The induced stresses reduce the anisotropy energy of the ferromagnetic film at the selected locations and enable the domains thereat to become poled in accordance with the applied field. In one version of the invention, the writing means comprises a directed energy beam such as a laser or electron beam. In another version, the writing system employs surface acoustic waves in combination with a scanned energy beam.
    • 描述了一种数据存储系统,其包括磁致伸缩,各向异性的铁磁膜,其磁畴表现出优选的取向,并且沿着优选的取向开始沿一个方向极化。 与一个方向相反地施加一个场,该场不足以引起极化域的切换。 将电致伸缩膜放置成与铁磁膜接触,并且提供书写系统来致动电致伸缩膜以在选定位置向强磁性膜赋予应力。 感应应力降低了所选择的位置处的铁磁性膜的各向异性能,并且使得其上的畴根据所施加的场而变得极化。 在本发明的一个版本中,写入装置包括诸如激光或电子束的定向能量束。 在另一个版本中,书写系统使用表面声波与扫描能量束组合。