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21. 发明授权

US07674352B2 System and method for depositing a gaseous mixture onto a substrate surface using a showerhead apparatus 失效
标题翻译：使用喷头装置将气态混合物沉积到基材表面上的系统和方法
公开(公告)号：US07674352B2
公开(公告)日：2010-03-09
申请号：US11564198
申请日：2006-11-28
申请人： David Bour , Lori Washington , Sandeep Nijhawan , Ronald Stevens , Jacob Smith , Alexander Tam , Nyi Oo Myo , Steve Park , Rosemary Twist , Garry Kwong , Jie Su
发明人： David Bour , Lori Washington , Sandeep Nijhawan , Ronald Stevens , Jacob Smith , Alexander Tam , Nyi Oo Myo , Steve Park , Rosemary Twist , Garry Kwong , Jie Su
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/45514 , C23C16/45572 , C23C16/45574
摘要： A gaseous mixture is deposited onto a substrate surface using a showerhead. A first plenum of the showerhead has a plurality of channels fluidicly coupled with an interior of a processing chamber. A second plenum gas flows through a plurality of tubes extending from a second plenum of the showerhead through the channels into the interior of the processing chamber. The diameter of the tubes is smaller than the diameter of the channels such that a first plenum gas flows into the interior of the processing chamber through a space defined between the outer surface of the tubes and the surface of the channels. The length and diameter of the tubes determine the level of distribution and the molar ratio of the first gas and the second gas in the gaseous mixture that is deposited on the surface of the substrate.
摘要翻译：使用喷头将气体混合物沉积到基底表面上。喷头的第一增压室具有与处理室的内部流体耦合的多个通道。第二增压气体流过从喷头的第二增压室通过通道延伸到处理室内部的多个管。管的直径小于通道的直径，使得第一增压气体通过限定在管的外表面和通道表面之间的空间流入处理室的内部。管的长度和直径确定沉积在基底表面上的气态混合物中的分布水平和第一气体与第二气体的摩尔比。

22. 发明申请

US20090194026A1 PROCESSING SYSTEM FOR FABRICATING COMPOUND NITRIDE SEMICONDUCTOR DEVICES 审中-公开
标题翻译：用于制备化合物氮化物半导体器件的处理系统
公开(公告)号：US20090194026A1
公开(公告)日：2009-08-06
申请号：US12023572
申请日：2008-01-31
申请人： BRIAN H. BURROWS , Lori D. Washington , Ronald Stevens , Kenric T. Choi , Anthony F. White , Roger N. Anderson , Sandeep Nijhawan , Joshua J. Podesta , Alexander Tam
发明人： BRIAN H. BURROWS , Lori D. Washington , Ronald Stevens , Kenric T. Choi , Anthony F. White , Roger N. Anderson , Sandeep Nijhawan , Joshua J. Podesta , Alexander Tam
IPC分类号： C23C16/54
CPC分类号： C23C16/54 , C30B25/08 , C30B29/403 , C30B35/00 , H01L21/67017 , H01L21/67115 , H01L21/67161 , H01L21/67207 , H01L21/68764 , H01L21/68771
摘要： One embodiment of a processing system for fabricating compound nitride semiconductor devices comprises one or more processing chamber operable with form a compound nitride semiconductor layer on a substrate, a transfer chamber coupled with the processing chamber, a loadlock chamber coupled with the transfer chamber, and a load station coupled with the loadlock chamber, wherein the load station comprises a conveyor tray movable to convey a carrier plate loaded with one or more substrates into the loadlock chamber. Compared to a single chamber reactor, the multi-chamber processing system expands the potential complexity and variety of compound structures. Additionally, the system can achieve higher quality and yield by specialization of individual chambers for specific epitaxial growth processes. Throughput is increased by simultaneous processing in multiple chambers.
摘要翻译：用于制造复合氮化物半导体器件的处理系统的一个实施例包括可在衬底上形成复合氮化物半导体层的可操作的一个或多个处理室，与处理室耦合的传送室，与传送室耦合的负载锁定室，以及加载站与负载锁定室耦合，其中装载站包括可移动以将装载有一个或多个基板的承载板输送到负载锁定室中的输送器托盘。与单室反应器相比，多室处理系统扩大了复合结构的潜在复杂性和多样性。此外，该系统可以通过专用于特定外延生长工艺的各个室来实现更高的质量和产量。通过在多个室中同时处理来提高吞吐量。

23. 发明申请

US20080314311A1 HVPE SHOWERHEAD DESIGN 审中-公开
标题翻译： HVPE淋浴设计
公开(公告)号：US20080314311A1
公开(公告)日：2008-12-25
申请号：US11767520
申请日：2007-06-24
申请人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Jacob Grayson , Kenric T. Choi , Sumedh Acharya , Sandeep Nijhawan , Olga Kryliouk , Yuriy Melnik
发明人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Jacob Grayson , Kenric T. Choi , Sumedh Acharya , Sandeep Nijhawan , Olga Kryliouk , Yuriy Melnik
IPC分类号： C30B25/14 , C23C16/34
CPC分类号： C23C16/4488 , C23C16/45502 , C23C16/45512 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/45578 , C30B25/14 , C30B29/403 , Y10T117/10
摘要： A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.
摘要翻译：提供了可用于沉积工艺的方法和装置，例如金属氮化物膜的氢化物气相外延（HVPE）沉积。第一组通道可以引入含金属的前体气体。第二组通道可以提供含氮前体气体。第一组和第二组通道可以散布，以分离含金属的前体气体和含氮前体气体，直到它们到达基底。惰性气体也可以通过通道向下流动，以帮助保持分离并限制通道处或附近的反应，从而防止通道上的不希望的沉积。

24. 发明申请

US20070256635A1 UV activation of NH3 for III-N deposition 审中-公开
标题翻译： NH3用于III-N沉积的UV活化
公开(公告)号：US20070256635A1
公开(公告)日：2007-11-08
申请号：US11416333
申请日：2006-05-02
申请人： David Bour , Lori Washington , Sandeep Nijhawan , Ronald Stevens , Jacob Smith
发明人： David Bour , Lori Washington , Sandeep Nijhawan , Ronald Stevens , Jacob Smith
IPC分类号： C23C16/00
CPC分类号： C23C16/34 , C23C16/45565 , C23C16/482
摘要： Systems are disclosed for fabricating compound nitride semiconductor structures. The systems include a housing defining a processing chamber, a substrate holder disposed within the processing chamber, an NH3 source, a group-III precursor source, an ultraviolet source, and a CVD showerhead disposed over the substrate holder. The showerhead has a first plenum fluidicly coupled with the NH3 source, with the first plenum having channels fluidicly coupled with an interior of the processing chamber. The first plenum is optically coupled with the ultraviolet light source at an ultraviolet wavelength to receive light transmitted by the ultraviolet light source within the first plenum. The CVD showerhead also has a second plenum fluidicly coupled with the group-III precursor source, with the second plenum having channels fluidicly coupled with the interior of the processing chamber.
摘要翻译：公开了用于制造复合氮化物半导体结构的系统。这些系统包括限定处理室的壳体，设置在处理室内的衬底保持器，NH 3源，III族前体源，紫外线源和设置在衬底上的CVD喷头持有人喷头具有与NH 3源流体耦合的第一增压室，第一增压室具有与处理室的内部流体耦合的通道。第一增压室与紫外光源以紫外线波长光学耦合，以接收由第一增压室内的紫外光源透射的光。 CVD喷头还具有与III族前体源流体耦合的第二增压室，第二增压室具有与处理室内部流体耦合的通道。

25. 发明申请

US20070240631A1 Epitaxial growth of compound nitride semiconductor structures 审中-公开
标题翻译：复合氮化物半导体结构的外延生长
公开(公告)号：US20070240631A1
公开(公告)日：2007-10-18
申请号：US11404516
申请日：2006-04-14
申请人： Sandeep Nijhawan , David Bour , Lori Washington , Jacob Smith , Ronald Stevens , David Eaglesham
发明人： Sandeep Nijhawan , David Bour , Lori Washington , Jacob Smith , Ronald Stevens , David Eaglesham
IPC分类号： C30B15/00 , C30B23/00 , G06F7/00 , C30B28/14
CPC分类号： C30B25/14 , C30B29/403 , C30B35/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67155
摘要： Apparatus and methods are described for fabricating a compound nitride semiconductor structure. Group-III and nitrogen precursors are flowed into a first processing chamber to deposit a first layer over a substrate with a thermal chemical-vapor-deposition process. The substrate is transferred from the first processing chamber to a second processing chamber. Group-III and nitrogen precursors are flowed into the second processing chamber to deposit a second layer over the first layer with a thermal chemical-vapor-deposition process. The first and second group-III precursors have different group-III elements.
摘要翻译：描述了用于制造复合氮化物半导体结构的装置和方法。 III族和氮气前体流入第一处理室，以通过热化学气相沉积工艺在衬底上沉积第一层。衬底从第一处理室转移到第二处理室。 III族和氮气前体流入第二处理室以通过热化学气相沉积工艺在第一层上沉积第二层。第一和第二III族前体具有不同的III族元素。

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