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21. 发明授权

US07737430B2 Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission 失效
公开(公告)号：US07737430B2
公开(公告)日：2010-06-15
申请号：US11553784
申请日：2006-10-27
申请人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
IPC分类号： H01L29/06
CPC分类号： H01L33/08 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/14 , H01L2224/05541 , H01L2224/05005
摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.

22. 发明授权

US08994071B2 Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms 有权
标题翻译：利用铟耗尽机制在含铟衬底上生长的半导体器件
公开(公告)号：US08994071B2
公开(公告)日：2015-03-31
申请号：US13264509
申请日：2010-04-30
申请人： Thomas J. Miller , Michael A. Haase , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Xiaoguang Sun
IPC分类号： H01L29/22 , H01L33/28 , H01L33/00 , H01L21/02 , H01L33/08 , H01L33/50
CPC分类号： H01L33/0087 , H01L21/02392 , H01L21/02463 , H01L21/02466 , H01L21/02469 , H01L21/0256 , H01L21/02568 , H01L21/02576 , H01L21/02631 , H01L33/08 , H01L33/28 , H01L33/502
摘要： We have observed anomalous behavior of II-VI semiconductor devices grown on certain semiconductor substrates, and have determined that the anomalous behavior is likely the result of indium atoms from the substrate migrating into the II-V layers during growth. The indium can thus become an unintended dopant in one or more of the II-VI layers grown on the substrate, particularly layers that are close to the growth substrate, and can detrimentally impact device performance. We describe a variety of semiconductor constructions and techniques effective to deplete the migrating indium within a short distance in the growth layers, or to substantially prevent indium from migrating out of the substrate, or to otherwise substantially isolate functional II-VI layers from the migrating indium, so as to maintain good device performance.
摘要翻译：我们已经观察到在某些半导体衬底上生长的II-VI半导体器件的异常行为，并且已经确定异常行为可能是在生长期间从衬底中的铟原子迁移到II-V层的结果。因此，铟可以成为在衬底上生长的一个或多个II-VI层中的非预期掺杂剂，特别是靠近生长衬底的层，并且可能不利地影响器件性能。我们描述了在生长层中短时间内有效去除迁移铟的各种半导体结构和技术，或者基本上防止铟从衬底迁移出来，或以其他方式实质上将功能性II-VI层与迁移铟，以保持良好的设备性能。

23. 发明授权

US08338838B2 Down-converted light source with uniform wavelength emission 有权
标题翻译：具有均匀波长发射的下变频光源
公开(公告)号：US08338838B2
公开(公告)日：2012-12-25
申请号：US12810052
申请日：2008-12-09
申请人： Xiaoguang Sun , Michael A. Haase , Thomas J. Miller , Terry L. Smith , Tommie W. Kelley , Catherine A. Leatherdale
发明人： Xiaoguang Sun , Michael A. Haase , Thomas J. Miller , Terry L. Smith , Tommie W. Kelley , Catherine A. Leatherdale
IPC分类号： H01L33/00
CPC分类号： H01L27/156 , H01L33/0079 , H01L33/505
摘要： An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.
摘要翻译：光源的布置附着到半导体波长转换器。每个光源以相应的峰值波长发光，并且光源的布置的特征在于峰值波长的第一范围。半导体波长转换器的特征在于通过光源的排列泵浦时的第二峰值波长范围。峰值波长的第二范围比峰值波长的第一范围窄。半导体波长转换器的特征在于具有比光源的最长峰值波长长的波长的吸收边。波长转换器还可以用于减小来自扩展光源的输出中的波长变化。

24. 发明申请

US20120097921A1 Cadmium-free Re-Emitting Semiconductor Construction 失效
标题翻译：无镉重发半导体结构
公开(公告)号：US20120097921A1
公开(公告)日：2012-04-26
申请号：US13379858
申请日：2010-06-25
申请人： Terry L. Smith , Michael A. Haase , Thomas J. Miller , Xiaoguang Sun
发明人： Terry L. Smith , Michael A. Haase , Thomas J. Miller , Xiaoguang Sun
IPC分类号： H01L33/04
CPC分类号： H01L33/08 , H01L33/26 , H01L33/502
摘要： Disclosed re-emitting semiconductor constructions (RSCs) may provide full-color RGB or white-light emitting devices that are free of cadmium. Some embodiments may include a potential well that comprises a III-V semiconductor and that converts light of a first photon energy to light of a smaller photon energy, and a window that comprises a II-VI semiconductor having a band gap energy greater than the first photon energy. Some embodiments may include a potential well that converts light having a first photon energy to light having a smaller photon energy and that comprises a II-VI semiconductor that is substantially Cd-free. Some embodiments may include a potential well that comprises a first III-V semiconductor and that converts light having a first photon energy to light having a smaller photon energy, and a window that comprises a second III-V semiconductor and that has a band gap energy greater than the first photon energy.
摘要翻译：公开的再发射半导体结构（RSC）可以提供不含镉的全色RGB或白光发射器件。一些实施例可以包括包含III-V半导体并且将第一光子能量的光转换成较小光子能量的光的势阱，以及包括具有大于第一光子能级的带隙能量的II-VI半导体的窗口光子能量。一些实施例可以包括将具有第一光子能量的光转换成具有较小光子能量的光并且包括基本上不含Cd的II-VI半导体的势阱。一些实施例可以包括包括第一III-V半导体并且将具有第一光子能量的光转换成具有较小光子能量的光的势阱，以及包括第二III-V半导体并且具有带隙能量大于第一光子能量。

25. 发明授权

US08148741B2 Polychromatic LED's and related semiconductor devices 有权
标题翻译：多色LED及相关半导体器件
公开(公告)号：US08148741B2
公开(公告)日：2012-04-03
申请号：US12781227
申请日：2010-05-17
申请人： Thomas J. Miller , Michael A. Haase , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Xiaoguang Sun
IPC分类号： H01L33/00
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/0008 , H01L33/06
摘要： A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum wells. The semiconductor device is typically an LED, and may be a white or near-white light LED. The semiconductor device may additionally comprise a third potential well not located within a pn junction. The semiconductor device may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the second or third quantum wells. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.
摘要翻译：提供了一种半导体器件，其包括位于pn结内的第一势阱和不位于pn结内的第二势阱。势阱可能是量子阱。半导体器件通常是LED，并且可以是白色或近白色的光LED。半导体器件还可以包括不位于pn结内的第三势阱。半导体器件还可以包括围绕或紧密或紧邻第二或第三量子阱的吸收层。此外，提供了包括根据本发明的半导体器件的图形显示装置和照明装置。

26. 发明授权

US07902543B2 Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission 有权
标题翻译：适应短波长的LED用于多色，宽带或“白色”发射
公开(公告)号：US07902543B2
公开(公告)日：2011-03-08
申请号：US12715957
申请日：2010-03-02
申请人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
IPC分类号： H01L29/06
CPC分类号： H01L33/08 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/14 , H01L2224/05541 , H01L2224/05005
摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.
摘要翻译：提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。势阱通常是量子阱。适配的LED可以是白色或近白色的LED灯。再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。

27. 发明申请

US20100224889A1 Polychromatic LED's and Related Semiconductor Devices 有权
标题翻译：多色LED和相关半导体器件
公开(公告)号：US20100224889A1
公开(公告)日：2010-09-09
申请号：US12781227
申请日：2010-05-17
申请人： Thomas J. Miller , Michael A. Haase , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Xiaoguang Sun
IPC分类号： H01L33/08 , H01L33/04
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/0008 , H01L33/06
摘要： A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum wells. The semiconductor device is typically an LED, and may be a white or near-white light LED. The semiconductor device may additionally comprise a third potential well not located within a pn junction. The semiconductor device may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the second or third quantum wells. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.
摘要翻译：提供了一种半导体器件，其包括位于pn结内的第一势阱和不位于pn结内的第二势阱。势阱可能是量子阱。半导体器件通常是LED，并且可以是白色或近白色的LED。半导体器件还可以包括不位于pn结内的第三势阱。半导体器件还可以包括围绕或紧密或紧邻第二或第三量子阱的吸收层。此外，提供了包括根据本发明的半导体器件的图形显示装置和照明装置。

28. 发明授权

US07745814B2 Polychromatic LED's and related semiconductor devices 无效
标题翻译：多色LED及相关半导体器件
公开(公告)号：US07745814B2
公开(公告)日：2010-06-29
申请号：US11009241
申请日：2004-12-09
申请人： Thomas J. Miller , Michael A. Haase , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Xiaoguang Sun
IPC分类号： H01L29/06 , H01L27/15
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/0008 , H01L33/06
摘要： A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum wells. The semiconductor device is typically an LED, and may be a white or near-white light LED. The semiconductor device may additionally comprise a third potential well not located within a pn junction. The semiconductor device may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the second or third quantum wells. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.
摘要翻译：提供了一种半导体器件，其包括位于pn结内的第一势阱和不位于pn结内的第二势阱。势阱可能是量子阱。半导体器件通常是LED，并且可以是白色或近白色的LED。半导体器件还可以包括不位于pn结内的第三势阱。半导体器件还可以包括围绕或紧密或紧邻第二或第三量子阱的吸收层。此外，提供了包括根据本发明的半导体器件的图形显示装置和照明装置。

29. 发明申请

US20160139337A1 Dual-Ended Optical Fiber Pathway 审中-公开
标题翻译：双端光纤通道
公开(公告)号：US20160139337A1
公开(公告)日：2016-05-19
申请号：US14231000
申请日：2014-03-31
申请人： Michael J. Hines , Jie Li , Xiaoguang Sun , Adam Hokansson , Robert J. Blakley , Robert Mattern, JR.
发明人： Michael J. Hines , Jie Li , Xiaoguang Sun , Adam Hokansson , Robert J. Blakley , Robert Mattern, JR.
IPC分类号： G02B6/26 , G01K11/32 , G02B6/255 , G02B6/02 , G02B6/028
CPC分类号： G02B6/262 , G01K11/32 , G02B6/02042 , G02B6/0281 , G02B6/2551
摘要： In an optical fiber turnaround, first and second optical fiber cores are configured to transmit light bidirectionally along a transmission axis between proximal and distal ends of the first and second optical fiber cores. A reflector component is positioned at the distal ends of the first and second optical fiber cores. The first core, second core, and reflector component are configured to provide a bidirectional routing path, wherein light energy travels from the proximal end of one of the first and second cores towards the reflector component, and travels back from the reflector component along the other of the first and second cores.
摘要翻译：在光纤周转中，第一和第二光纤芯被配置为沿第一和第二光纤芯的近端和远端之间的透射轴双向透射光。反射器部件位于第一和第二光纤芯的远端。第一核心，第二核心和反射器部件被配置为提供双向路由路径，其中光能量从第一和第二核心之一的近端朝向反射器部件行进，并且沿着另一个从反射器部件返回的第一和第二芯。

30. 发明申请

US20090269076A1 SYSTEMS AND METHODS FOR OPTICAL RECEIVER DECISION THRESHOLD OPTIMIZATION 有权
标题翻译：光接收机决策阈值优化的系统与方法
公开(公告)号：US20090269076A1
公开(公告)日：2009-10-29
申请号：US12111719
申请日：2008-04-29
申请人： Qingzhong CAI , Xiaoguang Sun , Gabriel E. Cardona
发明人： Qingzhong CAI , Xiaoguang Sun , Gabriel E. Cardona
IPC分类号： H04B10/06 , H04B10/00
CPC分类号： H04B10/695
摘要： The present invention provides systems and methods for a receiver threshold optimization loop to provide self-contained automatic adjustment in a compact module, such as a pluggable optical transceiver. The receiver threshold optimization loop utilizes a performance metric associated with the receiver, such as FEC, to optimize performance of the receiver. The receiver is optimized through a change in the receiver threshold responsive to the performance metric. Advantageously, the present invention provides improved receiver performance through a continuous adjustment that is self-contained within the receiver, such as within a pluggable optical transceiver compliant to a multi-source agreement (MSA). The receiver threshold optimization loop can include a fine and a coarse sweep of adjustment from an initial setting.
摘要翻译：本发明提供了一种用于接收器阈值优化回路的系统和方法，以在诸如可插拔光收发器之类的紧凑模块中提供自包含的自动调整。接收机阈值优化循环利用与接收机（例如FEC）相关联的性能度量来优化接收机的性能。响应于性能指标，通过接收机阈值的变化来优化接收机。有利地，本发明通过在接收机内自包含的连续调整来提供改进的接收机性能，例如在符合多源协议（MSA）的可插拔光收发器内。接收器阈值优化环路可以包括从初始设置的精细和粗略的调整扫描。

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