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    • 25. 发明授权
    • Semiconductor memory device and bit line connecting method thereof
    • 半导体存储器件及其位线连接方法
    • US06483765B2
    • 2002-11-19
    • US09750219
    • 2000-12-29
    • Jong Hee Han
    • Jong Hee Han
    • G11C800
    • G11C7/06G11C7/18
    • The present invention discloses a semiconductor memory device and bit line connection method thereof. A control signal for connecting bit line sense amplifiers drives at a high voltage level of Vpp and thereafter is limited as to when it can transition to a power voltage Vdd level or a ground voltage level, thereby reducing a power consumption in data read, write and refresh operations. Accordingly, power consumption of the semiconductor memory device is reduced, in particular, for a memory device that supports a self refresh mode or an automatic refresh mode.
    • 本发明公开了一种半导体存储器件及其位线连接方法。 用于连接位线读出放大器的控制信号以Vpp的高电压电平驱动,此后受限于可以转换到电源电压Vdd电平或接地电压电平,从而降低数据读取,写入和写入的功耗 刷新操作。 因此,减少了半导体存储器件的功耗,特别是对于支持自刷新模式或自动刷新模式的存储器件。