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21. 发明授权

US5676770A Low leakage flux, non-oriented electromagnetic steel sheet, and core and compact transformer using the same 失效
标题翻译：低漏磁通，无取向电磁钢板，以及使用其的铁芯和紧凑型变压器
公开(公告)号：US5676770A
公开(公告)日：1997-10-14
申请号：US570288
申请日：1995-12-11
申请人： Keiji Sato , Kouji Yano , Minoru Takashima , Masaki Kawano , Takashi Obara
发明人： Keiji Sato , Kouji Yano , Minoru Takashima , Masaki Kawano , Takashi Obara
IPC分类号： C21D8/12 , C22C38/00 , C22C38/04 , C22C38/60 , H01F1/147
CPC分类号： H01F1/14775 , C21D8/1233
摘要： This invention relates to a non-oriented electromagnetic steel sheet with low leakage flux for a compact transformer and a method for making the same. After stress relief annealing, the magnetic permeability .mu..sub.C of the sheet in the direction transverse to the sheet rolling direction is.mu..sub.C .gtoreq.about 2.5.times.10.sup.-3 (H/m) and magnetic permeability .mu..sub.D of the sheet in the direction 45.degree. to the sheet rolling direction is .mu..sub.D .gtoreq.about 1.5.times.10.sup.-3 (H/m).
摘要翻译：本发明涉及一种用于紧凑型变压器的具有低漏磁通量的无取向电磁钢板及其制造方法。在应力消除退火之后，片材在与片材滚动方向横切的方向上的磁导率μC为片材在45°方向上的磁导率μC为大约2.5×10 -3（H / m）和磁导率μD DEG对于轧制方向为μD> / =约1.5×10 -3（H / m）。

22. 发明授权

US5334102A Control system for continuously variable transmission 失效
标题翻译：无级变速器控制系统
公开(公告)号：US5334102A
公开(公告)日：1994-08-02
申请号：US957806
申请日：1992-10-08
申请人： Keiji Sato
发明人： Keiji Sato
IPC分类号： F16H9/00 , F16H61/02 , F16H61/12 , F16H61/662 , F16H61/06 , F16H61/18
CPC分类号： F16H61/66259 , F16H61/12 , F16H2061/1232 , F16H2061/1268
摘要： A control system for a belt-type continuously variable transmission of a motor vehicle, having a primary and a secondary control valve for varying the transmission ratio. The primary control valve receives an electric signal from a control unit to vary a primary hydraulic pressure. The primary control valve produces a primary pressure which causes the transmission to take an intermediate transmission ratio when the electric signal is not transmitted due to a failure such as breakage of a cable. Thus, dangerous situations of the vehicle are prevented, and the vehicle can reliably start in a relatively low speed range of the transmission.
摘要翻译：一种用于机动车辆的带式无级变速器的控制系统，具有用于改变传动比的初级和次级控制阀。主控制阀接收来自控制单元的电信号以改变初级液压。主控制阀产生一个初级压力，当由于诸如电缆断裂的故障而不传输电信号时，使传动变为中间传动比。因此，防止车辆的危险情况，并且车辆可以在变速器的相对低的速度范围内可靠地起动。

23. 发明授权

US5083982A System for controlling a continuously variable transmission of a motor vehicle 失效
标题翻译：控制电机连续可变变速器的系统
公开(公告)号：US5083982A
公开(公告)日：1992-01-28
申请号：US678791
申请日：1991-04-01
申请人： Keiji Sato
发明人： Keiji Sato
IPC分类号： F16H9/00 , F16H59/72 , F16H61/00 , F16H61/02 , F16H61/28 , F16H61/662 , F16K31/06 , H01H47/22
CPC分类号： F16H61/0251 , F16H61/66259 , H01H47/22 , F16H2061/0255 , F16H59/72 , F16H61/662 , Y10T477/62429
摘要： A control unit of a CVT is provided to produce a basic exciting current for the dither exciting current fed to a solenoid of the solenoid operated control valve. A dither is added to the basic exciting current for producing the dither exciting current. A positive deviation and a negative deviation of the dither exciting current from the basic exciting current in one cycle of the dither is integrated for producing integrals. A correction value which renders the sum of said integrals zero is produced. The correction value is added to the dither so that a corrected dither exciting current is produced.
摘要翻译：提供CVT的控制单元以产生供给到电磁操作控制阀的螺线管的抖动励磁电流的基本励磁电流。在产生抖动激励电流的基本激励电流中加入抖动。将抖动激励电流与抖动的一个周期中的基本励磁电流的正偏差和负偏差集成用于产生积分。产生使所述积分零的和的校正值。校正值被加到抖动，从而产生校正的抖动激励电流。

24. 发明授权

US09030561B2 Image calibration method and image calibration device 有权
标题翻译：图像校准方法和图像校准装置
公开(公告)号：US09030561B2
公开(公告)日：2015-05-12
申请号：US13807440
申请日：2011-06-29
申请人： Keiji Sato
发明人： Keiji Sato
IPC分类号： H04N7/18 , H04N5/357 , H04N17/00 , G06T7/00 , G06T3/00
CPC分类号： H04N7/181 , G06T3/00 , G06T7/80 , G06T2207/30204 , G06T2207/30252 , H04N5/3572 , H04N17/002
摘要： To alleviate the strictness degree required for a relative positional relationship between a calibration index and a vehicle in an image calibration method and an image calibration device. The image calibration device includes a calibration index 20, four cameras 10, a distortion correction processing unit 30, a viewpoint transformation processing unit 40, and a calibration processing unit 50. The calibration index 20 includes two mutually parallel lines and a distance between which is known and one line orthogonal to the two lines. The cameras 10 take peripheral area images S1 to S4 of peripheral areas R1 to R4 including the calibration index 20. The distortion correction processing unit 30 corrects the peripheral area images S1 to S4 by using internal parameters M to obtain distortion-corrected images P1 to P4. The viewpoint transformation processing unit 40 performs viewpoint transformation processing on the distortion-corrected images P1 to P4 by using external parameters N to obtain a viewpoint-transformed composite image Q0. The calibration processing unit 50 performs calibration in the viewpoint transformation processing. The calibration processing unit 50 includes an internal parameter correction unit 51 and an external parameter correction unit 52. The internal parameter correction unit 51 corrects the internal parameters M. The external parameter correction unit 52 corrects the external parameters N.
摘要翻译：为了减轻图像校准方法和图像校准装置中的校准索引和车辆之间的相对位置关系所需的严格程度。图像校准装置包括校准索引20，四个照相机10，失真校正处理单元30，视点变换处理单元40和校准处理单元50.校准索引20包括两条相互平行的线，其间距离已知和一行正交于两条线。相机10拍摄包括校准索引20的外围区域R1至R4的周边区域图像S1至S44.失真校正处理单元30通过使用内部参数M来校正外围区域图像S1至S4以获得失真校正图像P1至P4 。视点变换处理部40通过使用外部参数N对失真校正图像P1〜P4进行视点变换处理，得到视点变换合成图像Q0。校准处理单元50在视点变换处理中执行校准。校准处理单元50包括内部参数校正单元51和外部参数校正单元52.内部参数校正单元51校正内部参数M.外部参数校正单元52校正外部参数N.

25. 发明申请

US20120153779A1 ELECTRONIC COMPONENT 审中-公开
标题翻译：电子元件
公开(公告)号：US20120153779A1
公开(公告)日：2012-06-21
申请号：US13308896
申请日：2011-12-01
申请人： Keiji Sato , Hitoshi Takeuchi , Takahiko Nakamura , Kiyoshi Aratake , Masashi Numata
发明人： Keiji Sato , Hitoshi Takeuchi , Takahiko Nakamura , Kiyoshi Aratake , Masashi Numata
IPC分类号： H01L41/053 , H05K5/06
CPC分类号： H03H9/1021 , H01L2924/0002 , H03H9/02133 , H01L2924/00
摘要： An electronic component includes a glass substrate, a lid that is bonded to the glass substrate, an internal electrode, an external electrode, and a through electrode that is disposed in a through hole passing through the glass substrate and electrically connects the internal electrode to the external electrode. A sputtered metal layer is formed on the end face of a core member of the through electrode, which is made of a metal, by sputtering.
摘要翻译：电子部件包括玻璃基板，与玻璃基板接合的盖，内部电极，外部电极和贯通电极，所述内部电极，外部电极和贯通电极配置在穿过玻璃基板的通孔中，并将内部电极电连接到外部电极。通过溅射在金属制的贯通电极芯体的端面上形成溅射金属层。

26. 发明授权

US07906429B2 Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof 有权
标题翻译：配线材料，使用布线材料配线的半导体装置及其制造方法
公开(公告)号：US07906429B2
公开(公告)日：2011-03-15
申请号：US11825678
申请日：2007-07-09
申请人： Toru Takayama , Keiji Sato , Shunpei Yamazaki
发明人： Toru Takayama , Keiji Sato , Shunpei Yamazaki
IPC分类号： H01L21/4763
CPC分类号： H01L33/62 , C23C14/165 , C23C14/3414 , H01L21/2855 , H01L23/552 , H01L27/124 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×1010 dyn/cm2 to 1×1010 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.3 ppm, preferably equal to or less than 0.1 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ·cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.
摘要翻译：实现了具有良好的TFT特性的半导体器件。通过使用高纯度靶作为靶，使用单一气体氩（Ar）作为溅射气体，将基板温度设定为300℃以下，将溅射气体压力设定为1.0Pa〜3.0 Pa时，膜的膜应力为-1×1010dyn / cm 2〜1×1010dyn / cm 2。通过这样使用导电膜，其中膜中所含的钠的量等于或小于0.3ppm，优选等于或小于0.1ppm，并且具有低电阻率（等于或小于40μ＆OHgr· cm），作为栅极布线材料和TFT的其它布线的材料，可以提高设置有TFT的半导体器件的操作性能和可靠性。

27. 发明授权

US07523619B2 Indoor and outdoor unit communication via signal from a power line 失效
标题翻译：通过来自电力线的信号进行室内和室外单元通信
公开(公告)号：US07523619B2
公开(公告)日：2009-04-28
申请号：US10823780
申请日：2004-04-14
申请人： Yasuyuki Kojima , Noboru Akiyama , Takeshi Onaka , Tatsumi Yamauchi , Koichi Taniguchi , Koichi Tokushige , Noriyuki Bunkou , Keiji Sato
发明人： Yasuyuki Kojima , Noboru Akiyama , Takeshi Onaka , Tatsumi Yamauchi , Koichi Taniguchi , Koichi Tokushige , Noriyuki Bunkou , Keiji Sato
IPC分类号： F25B49/00 , G05D23/00 , G01M1/38
CPC分类号： F24F1/0003 , F24F11/30 , F24F11/54
摘要： An air conditioning system is arranged to use a power line for communication. The air conditioning system includes one or more indoor units, one or more outdoor units, and a system controller for controlling the indoor units or outdoor units and executes communications between the indoor units and the outdoor units as overlapping a signal on the power line for supplying electric power. The outdoor units are connected with the system controller through a leased communication line. The indoor unit provides a power line communication device being connected with the power line. The outdoor unit provides a leased communication device being connected with the leased communication line. A bridge is also provided for connecting the leased communication line and the power line. The control information is exchanged mutually between the indoor units, the outdoor units and the system controller through the power line.
摘要翻译：一个空调系统被设置为使用电力线进行通信。空调系统包括一个或多个室内单元，一个或多个室外单元，以及用于控制室内单元或室外单元的系统控制器，并且执行室内单元和室外单元之间的通信，以与用于供应的电力线上的信号重叠电力。室外机通过租用通信线与系统控制器连接。室内机提供与电力线连接的电力线通信装置。户外单元提供与租用通信线路连接的租用通信设备。还提供了用于连接租用通信线路和电力线路的桥梁。控制信息通过电力线在室内机，室外机和系统控制器之间相互交换。

28. 发明授权

US07474070B2 Electric power steering apparatus 有权
标题翻译：电动助力转向装置
公开(公告)号：US07474070B2
公开(公告)日：2009-01-06
申请号：US11709024
申请日：2007-02-22
申请人： Yasushi Miyazawa , Keiji Sato
发明人： Yasushi Miyazawa , Keiji Sato
IPC分类号： H02P7/00 , H02K17/32 , B62D5/00
CPC分类号： B62D5/049 , B62D6/10 , G01L25/003
摘要： A torque detection portion includes a first arm having a detection coil L1 and a resistor R1, and a second arm having a detection coil L2 and a resistor R2. When a test mode is set, a reference voltage Vref having an abnormal value is outputted to a monitoring portion 13. An abnormal condition is intentionally caused in the monitoring portion 13. A main torque signal Vtm is compared with a sub torque signal Vts in the monitoring portion 13. When the reference voltage Vref set in the monitoring portion 13 has the abnormal value, a sub torque signal Vts having a level of 0 (Vts=0) is forcibly outputted in a normal condition. Then the signal Vtm is equal to the signal Vts, the monitoring portion 13 determines that a shortcircuit occurs between a main torque signal line and a sub torque signal line.
摘要翻译：扭矩检测部分包括具有检测线圈L1和电阻器R1的第一臂和具有检测线圈L2和电阻器R2的第二臂。当设置测试模式时，具有异常值的参考电压Vref被输出到监视部分13.在监视部分13中有意地引起异常状况。将主转矩信号Vtm与副转矩信号Vts进行比较在监视部13中设定的基准电压Vref为异常值的情况下，在正常状态下强制输出0（Vts = 0）的副转矩信号Vts。然后信号Vtm等于信号Vts，监视部分13确定在主转矩信号线和副转矩信号线之间发生短路。

29. 发明申请

US20080014666A1 Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof 有权
标题翻译：配线材料，使用布线材料配线的半导体装置及其制造方法
公开(公告)号：US20080014666A1
公开(公告)日：2008-01-17
申请号：US11825678
申请日：2007-07-09
申请人： Toru Takayama , Keiji Sato , Shunpei Yamazaki
发明人： Toru Takayama , Keiji Sato , Shunpei Yamazaki
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , C23C14/165 , C23C14/3414 , H01L21/2855 , H01L23/552 , H01L27/124 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×1010 dyn/cm2 to 1×1010 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.3 ppm, preferably equal to or less than 0.1 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ·cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.
摘要翻译：实现了具有良好的TFT特性的半导体器件。通过使用高纯度靶作为靶，使用单一气体氩（Ar）作为溅射气体，将基板温度设定为300℃以下，将溅射气体压力设定为1.0Pa〜3.0 Pa，薄膜的薄膜应力由-1×10 10 /秒±2至1×10 10 dyn / cm 2进行， / SUP>。通过这样使用导电膜，其中膜中所含的钠的量等于或小于0.3ppm，优选等于或小于0.1ppm，并具有低电阻率（等于或小于40μΩ·cm ），作为栅极布线材料和TFT的其他配线的材料，可以提高设置有TFT的半导体器件的操作性能和可靠性。

30. 发明申请

US20070224791A1 Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof 有权
标题翻译：配线材料，使用布线材料配线的半导体装置及其制造方法
公开(公告)号：US20070224791A1
公开(公告)日：2007-09-27
申请号：US11786880
申请日：2007-04-13
申请人： Toru Takayama , Keiji Sato , Shunpei Yamazaki
发明人： Toru Takayama , Keiji Sato , Shunpei Yamazaki
IPC分类号： H01L21/3205
CPC分类号： C23C14/185 , G02F2001/136295 , H01L21/2855 , H01L27/124 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L2029/7863 , H01L2924/0002 , H01L2924/00
摘要： By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature at 300° C. or less, setting the sputtering power from 1 kW to 9 kW, and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×1010 dyn/cm2 to 1 x 10 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.03 ppm, preferably equal to or less than 0.01 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ•cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.
摘要翻译：通过使用高纯度靶作为目标，使用单一气体氩（Ar）作为溅射气体，将衬底温度设定在300℃以下，将溅射功率设定为1kW至9kW，并设定溅射气体压力为1.0Pa至3.0Pa，膜的膜应力由-1×10 10 / cm 2至1×10 5 / SUP> dyn / cm 2。通过这样使用导电膜，其中膜中所含的钠的量等于或小于0.03ppm，优选等于或小于0.01ppm，并具有低电阻率（等于或小于40μΩ·cm ），作为栅极布线材料和TFT的其他配线的材料，可以提高设置有TFT的半导体器件的操作性能和可靠性。

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