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    • 21. 发明授权
    • Magnetic memory device and method for reading the same
    • 磁记忆装置及其读取方法
    • US07489577B2
    • 2009-02-10
    • US11808967
    • 2007-06-14
    • Yoshihiro SatoMasaki Aoki
    • Yoshihiro SatoMasaki Aoki
    • G11C7/02
    • G11C11/16
    • A magnetic memory device comprises a plurality of bit lines BL; memory cells MC disposed at the respective plurality of bit lines, and each including a magnetoresistive effect element MTJ whose resistance value is changed with changes of magnetization direction, and a select transistor Tr connected to the magnetoresistive effect element MTJ, the magnetoresistive effect element MC having one terminal connected to the bit line BL and the other terminal connected to a first signal line GND via the select transistor; dummy cells DC disposed at the respective plurality of bit lines BL, and each including a resistance element R of a constant resistance value, the resistance element having one terminal connected to the bit line BL and the other terminal connected to a second signal line SIGD; and a voltage sense amplifier SA connected to the plurality of bit lines BL.
    • 磁存储器件包括多个位线BL; 存储单元MC设置在相应的多个位线处,并且每个存储单元MC包括电阻值随着磁化方向的变化而变化的磁阻效应元件MTJ以及连接到磁阻效应元件MTJ的选择晶体管Tr,磁阻效应元件MC具有 一个端子连接到位线BL,另一个端子经由选择晶体管连接到第一信号线GND; 设置在各个位线BL上的虚设单元DC,并且每个都包括具有恒定电阻值的电阻元件R,该电阻元件具有连接到位线BL的一个端子,而另一个端子连接到第二信号线SIGD; 以及连接到多个位线BL的电压检测放大器SA。