会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 21. 发明授权
    • Coupling apparatus for structural members
    • 结构件联轴器
    • US07674064B2
    • 2010-03-09
    • US12325571
    • 2008-12-01
    • Tetsuya NakamuraAkira Horimoto
    • Tetsuya NakamuraAkira Horimoto
    • F16B21/02
    • F16B7/0406Y10T403/32032Y10T403/32803Y10T403/7005Y10T403/7007
    • The coupling apparatus for structural members includes a paired couplers for coupling structural members with each other, and each coupler includes a cylindrical main body, engaging projections spaced apart from each other at predetermined intervals in a circumferential direction at an end of the body and projecting along the center line of the body, and engaging hooks projecting in one circumferential direction at the projecting end portions of the projections. At least one coupler further includes a coupling direction changing mechanism which couples the at least one coupler with a predetermined position of a structural member corresponding thereto so that the center line of the body of the at least one coupler can be orientated in a desired direction.
    • 用于结构构件的联接装置包括用于将结构构件彼此连接的成对的联接器,并且每个联接器包括圆柱形主体,在主体的端部沿圆周方向以预定间隔彼此隔开的接合突起并沿着 主体的中心线,以及在突出部的突出端部沿一个圆周方向突出的接合钩。 至少一个联接器还包括联接方向改变机构,其将所述至少一个联接器与对应于其的结构构件的预定位置联接,使得所述至少一个联接器的主体的中心线可以沿期望的方向定向。
    • 22. 发明申请
    • SEMICONDUCTOR INTEGRATED DEVICE
    • 半导体集成器件
    • US20090224817A1
    • 2009-09-10
    • US12399152
    • 2009-03-06
    • Tetsuya NakamuraHideaki Ito
    • Tetsuya NakamuraHideaki Ito
    • H03L5/00
    • H03K3/35613
    • According to an aspect of the present invention, there is provided a semiconductor integrated device including: a level-shifting circuit including: a first and a second input nodes; and a first and a second output nodes; a first current mirror circuit connected with the first output node; a second current mirror circuit connected with the second output node; a first switch circuit series-connected with an input-side of first current mirror circuit; a second switch circuit series-connected with an input-side of the second current mirror circuit; a fifth switching element parallel-connected with the input-side of the first current mirror circuit; and a sixths switching element parallel-connected with the input-side of the second current mirror circuit.
    • 根据本发明的一个方面,提供一种半导体集成装置,包括:电平移动电路,包括:第一和第二输入节点; 以及第一和第二输出节点; 与第一输出节点连接的第一电流镜电路; 与第二输出节点连接的第二电流镜电路; 与第一电流镜电路的输入侧串联连接的第一开关电路; 与第二电流镜电路的输入侧串联连接的第二开关电路; 与第一电流镜电路的输入侧并联连接的第五开关元件; 以及与第二电流镜电路的输入侧并联的第六开关元件。
    • 30. 发明申请
    • Semiconductor device and manufacturing method thereof
    • 半导体装置及其制造方法
    • US20060284283A1
    • 2006-12-21
    • US11354854
    • 2006-02-16
    • Tetsuya NakamuraKazuyuki Sawada
    • Tetsuya NakamuraKazuyuki Sawada
    • H01L29/861H01L21/20
    • H01L21/26513H01L21/2658H01L21/823814H01L27/0629H01L29/66106H01L29/866
    • A -Zener diode includes a first conductivity type semiconductor region and a second conductivity type semiconductor region which form pn junction, an insulating film for covering the junction part of the semiconductor regions, a first electrode electrically connected with the first conductivity type semiconductor region, and a second electrode electrically connected with the second conductivity type semiconductor region. The second conductivity type semiconductor region has an impurity concentration distribution which is a combination of a first impurity concentration distribution having first diffusion depth and first peak concentration and a second impurity concentration distribution having second diffusion depth shallower than the first diffusion depth and second peak concentration higher than the first peak concentration. The first impurity concentration distribution is higher than the second impurity concentration distribution in concentration at the junction part.
    • A一齐二极管包括形成pn结的第一导电型半导体区域和第二导电型半导体区域,用于覆盖半导体区域的接合部分的绝缘膜,与第一导电类型半导体区域电连接的第一电极,以及 与第二导电类型半导体区域电连接的第二电极。 第二导电型半导体区域具有杂质浓度分布,其是具有第一扩散深度和第一峰值浓度的第一杂质浓度分布和具有比第一扩散深度浅的第二扩散深度和第二峰值浓度的第二杂质浓度分布的组合 比第一峰值浓度高。 第一杂质浓度分布高于接合部分浓度的第二杂质浓度分布。