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21. 发明授权

US08057603B2 Method of cleaning substrate processing chamber, storage medium, and substrate processing chamber 有权
标题翻译：基板处理室，存储介质和基板处理室的清洗方法
公开(公告)号：US08057603B2
公开(公告)日：2011-11-15
申请号：US11671223
申请日：2007-02-05
申请人： Masanobu Honda , Yutaka Matsui
发明人： Masanobu Honda , Yutaka Matsui
IPC分类号： B08B7/00 , B08B7/04
CPC分类号： B08B7/0035 , H01J37/32862 , Y10S438/905
摘要： A method of cleaning a substrate processing chamber that enables formation of an oxide film on a surface of a processing chamber inside component to be prevented. A substrate processing chamber 11 has therein a processing space S into which a wafer W is transferred and carries out reactive ion etching on the wafer W in the processing space S. The substrate processing chamber 11 has an upper electrode plate 38 that comprises silicon and a lower surface of which is exposed to the processing space S. A dry cleaning is carried out on the upper electrode plate 38 using oxygen radicals produced from oxygen gas introduced into the processing space S. An oxide removal processing is carried out on the upper electrode plate 38 using fluorine ions and fluorine radicals produced from carbon tetrafluoride gas introduced into the processing space S.
摘要翻译：一种能够防止在处理室内部组件的表面上形成氧化膜的基板处理室的清洗方法。衬底处理室11中具有转移晶片W的处理空间S，并且在处理空间S中对晶片W进行反应离子蚀刻。衬底处理室11具有上电极板38，上电极板38包括硅和其下表面暴露于处理空间S.使用从引入到处理空间S中的氧气产生的氧自由基，在上电极板38上进行干洗。在上电极板上进行氧化物去除处理 38使用从引入到处理空间S中的四氟化碳气体产生的氟离子和氟自由基。

22. 发明授权

US07883632B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07883632B2
公开(公告)日：2011-02-08
申请号：US11689065
申请日：2007-03-21
申请人： Masanobu Honda , Yutaka Matsui , Manabu Sato
发明人： Masanobu Honda , Yutaka Matsui , Manabu Sato
IPC分类号： G06F19/00 , C23C14/32 , C23C14/00
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/3255 , H01J37/32706 , H01J37/32862 , H01J37/32926 , H01L21/02532 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.
摘要翻译：一种使聚合物能够从电绝缘电极移除的等离子体处理装置。等离子体处理装置的基座设置在其中具有处理空间的基板处理室中。射频电源连接到基座。上电极板与基板处理室的壁和基座电绝缘。直流电源连接到上电极板。等离子体处理装置的控制器根据要执行的RIE处理的处理条件确定施加到上电极板的负DC电压的值。

23. 发明申请

US20100027160A1 DISK DRIVE INCLUDING A SHROUD FOR REMOVING DEBRIS FROM A HEAD-SLIDER 有权
标题翻译：磁盘驱动器，其中包括从主机上卸下DEBRIS的SHROUD
公开(公告)号：US20100027160A1
公开(公告)日：2010-02-04
申请号：US12512923
申请日：2009-07-30
申请人： Kazuhisa Murakami , Teruyoshi Higashiya , Mitsuhiko Oguchi , Masanobu Honda
发明人： Kazuhisa Murakami , Teruyoshi Higashiya , Mitsuhiko Oguchi , Masanobu Honda
IPC分类号： G11B33/14
CPC分类号： G11B5/41
摘要： A disk drive. The disk drive includes a head-slider, an actuator, a ramp and a shroud. The head-slider is configured to fly above the disk. The actuator is configured to support the head-slider and to swing about a pivot shaft to move the head-slider in a radial direction of the disk. The actuator may also be configured to rest on the ramp in a stand-by position. The shroud includes an inner peripheral side surface and an outer peripheral side surface. The shroud is configured to control an air-stream which flows in a direction from the pivot shaft toward the head-slider. The inner peripheral side surface and the outer peripheral side surface are configured to blast the head-slider with the air-stream upon spinning the disk when the head-slider is positioned away from the disk in the stand-by position.
摘要翻译：磁盘驱动器磁盘驱动器包括磁头滑动器，致动器，斜坡和护罩。磁头滑块配置为在磁盘上方飞。致动器构造成支撑头部滑动件并围绕枢轴摆动以沿着盘的径向方向移动头部滑块。致动器还可以被配置为在待机位置上搁置在斜坡上。护罩包括内周侧表面和外周侧表面。护罩构造成控制沿着从枢轴向头部滑块的方向流动的气流。内周侧表面和外周侧表面被配置为当磁头滑动件在待机位置远离盘定位时，在旋转盘时，利用气流喷射头滑块。

24. 发明申请

US20100024983A1 PLASMA ETCHING UNIT 有权
标题翻译：等离子体蚀刻单元
公开(公告)号：US20100024983A1
公开(公告)日：2010-02-04
申请号：US12578007
申请日：2009-10-13
申请人： Masanobu Honda , Kazuya Nagaseki , Koichiro Inazawa , Shoichiro Matsuyama , Hisataka Hayashi
发明人： Masanobu Honda , Kazuya Nagaseki , Koichiro Inazawa , Shoichiro Matsuyama , Hisataka Hayashi
IPC分类号： H01L21/3065
CPC分类号： H01J37/32082 , H01J37/3266 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.
摘要翻译：本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板具有有机材料膜和无机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过电场的手段，通过等离子体选择性地等离子体蚀刻衬底相对于无机材料膜的有机材料膜; 其中在所述蚀刻步骤中施加到所述至少一个所述电极的所述高频电力的频率为50〜150MHz。

25. 发明授权

US07655572B2 Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, control program and computer storage medium 失效
标题翻译：半导体器件制造方法，半导体器件制造装置，控制程序和计算机存储介质
公开(公告)号：US07655572B2
公开(公告)日：2010-02-02
申请号：US11551495
申请日：2006-10-20
申请人： Akinori Kitamura , Masanobu Honda , Nozomi Hirai , Masahiro Nakamura , Tatsuya Sugimoto
发明人： Akinori Kitamura , Masanobu Honda , Nozomi Hirai , Masahiro Nakamura , Tatsuya Sugimoto
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/31144 , H01L21/76802
摘要： Photoresist film is used as a mask, plasma etching of a SiO2 film is selectively performed to a photoresist film, and a hole is formed. An etching gas comprising unsaturated fluorocarbon gas containing oxygen expressed with CxFyO (y/x is 1-1.5 at an integer in x, as for 4 or 5, and y) is used for the plasma etching. C4F4O gas and C4F6O gas are used for the unsaturated fluorocarbon gas containing oxygen, for example.
摘要翻译：将光致抗蚀剂膜用作掩模，对光致抗蚀剂膜选择性地进行SiO 2膜的等离子体蚀刻，形成孔。包含用C x F y O表示的含有不饱和碳氟化合物气体的蚀刻气体（y / x为整数×，为4或5，y为1-1.5）用于等离子体蚀刻。例如，C4F4O气体和C4F6O气体用于含氧的不饱和碳氟化合物气体。

26. 发明申请

US20090203219A1 PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS AND COMPUTER-READABLE STORAGE MEDIUM 审中-公开
标题翻译：等离子体蚀刻方法，等离子体蚀刻装置和计算机可读存储介质
公开(公告)号：US20090203219A1
公开(公告)日：2009-08-13
申请号：US12369961
申请日：2009-02-12
申请人： Shoichiro MATSUYAMA , Masanobu Honda
发明人： Shoichiro MATSUYAMA , Masanobu Honda
IPC分类号： H01L21/3065
CPC分类号： H01L21/32137
摘要： A plasma etching method includes etching a silicon layer formed on a substrate to be processed through a patterned mask layer by using a plasma of a processing gas. The processing gas contains at least a CF3I gas, and during said etching the silicon layer, a radio frequency power is applied to a lower electrode mounting the substrate thereon such that a self-bias voltage Vdc for accelerating ions in the plasma is equal to or smaller than 200 V.
摘要翻译：等离子体蚀刻方法包括通过使用处理气体的等离子体通过图案化掩模层来蚀刻形成在待加工基板上的硅层。处理气体至少含有CF 3 I气体，并且在所述蚀刻期间，硅层将射频功率施加到将基板安装在其上的下电极，使得用于加速等离子体中的离子的自偏压Vdc等于或等于小于200 V.

27. 发明授权

US07501350B2 Plasma processing method 失效
标题翻译：等离子体处理方法
公开(公告)号：US07501350B2
公开(公告)日：2009-03-10
申请号：US11266232
申请日：2005-11-04
申请人： Masanobu Honda
发明人： Masanobu Honda
IPC分类号： H01L21/469 , H01L21/477
CPC分类号： H01L21/31116
摘要： Disclosed is a plasma processing method for processing a target object by using a plasma of a process gas containing a fluorocarbon compound. Used is a fluorocarbon compound having at least one triple bond within the molecule and at least one CF3 group bonded by a single bond to the carbon atom forming the triple bond with the adjacent carbon atom such as 1,1,1,4,4,4-hexafluoro-2-butyne or 1,1,1,4,4,5,5,5-octafluoro-2-pentyne.
摘要翻译：公开了一种通过使用含有氟碳化合物的处理气体的等离子体来处理目标物体的等离子体处理方法。使用的是在分子内具有至少一个三键的碳氟化合物，并且至少一个通过单键与碳原子键合的CF 3基团与相邻碳原子形成三键，例如1,1,1,4,4， 4-六氟-2-丁炔或1,1,1,4,4,5,5,5-八氟-2-戊炔。

28. 发明申请

US20070090093A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS, CONTROL PROGRAM AND COMPUTER STORAGE MEDIUM 失效
标题翻译：半导体器件制造方法，半导体器件制造设备，控制程序和计算机存储介质
公开(公告)号：US20070090093A1
公开(公告)日：2007-04-26
申请号：US11551495
申请日：2006-10-20
申请人： Akinori Kitamura , Masanobu Honda , Nozomi Hirai , Masahiro Nakamura , Tatsuya Sugimoto
发明人： Akinori Kitamura , Masanobu Honda , Nozomi Hirai , Masahiro Nakamura , Tatsuya Sugimoto
IPC分类号： C23F1/00 , H01L21/461 , H01L21/306 , B44C1/22
CPC分类号： H01L21/31116 , H01L21/31144 , H01L21/76802
摘要： Photoresist film is used as a mask, plasma etching of a SiO2 film is selectively performed to a photoresist film, and a hole is formed. An etching gas comprising unsaturated fluorocarbon gas containing oxygen expressed with CxFyO (y/x is 1-1.5 at an integer in x, as for 4 or 5, and y) is used for the plasma etching. C4F4O gas and C4F6O gas are used for the unsaturated fluorocarbon gas containing oxygen, for example.
摘要翻译：将光致抗蚀剂膜用作掩模，对光致抗蚀剂膜选择性地进行SiO 2膜的等离子体蚀刻，形成孔。包含用C x F y O表示的含有不饱和碳氟化合物气体的蚀刻气体（y / x为整数×，为4或5，y为1-1.5）用于等离子体蚀刻。用于含氧的不饱和碳氟化合物气体的C 4 N 4 O 4 O 4和C 4 F 6 O O气体，例如。

29. 发明申请

US20060213865A1 Method and device for plasma-etching organic material film 有权
标题翻译：等离子体蚀刻有机材料膜的方法和装置
公开(公告)号：US20060213865A1
公开(公告)日：2006-09-28
申请号：US10538064
申请日：2003-12-25
申请人： Masanobu Honda , Shoichiro Matsuyama , Kazuya Nagaseki , Hisataka Hayashi
发明人： Masanobu Honda , Shoichiro Matsuyama , Kazuya Nagaseki , Hisataka Hayashi
IPC分类号： C23F1/00 , H01L21/306 , B44C1/22
CPC分类号： H01L21/31138 , H01J37/32522 , H01J37/32633 , H01J37/32642 , H01J37/32688 , H01J2237/3341
摘要： A support electrode (2) and a counter electrode (16) constituting parallel plate electrodes are disposed in a process vessel (1). A substrate (W) with an organic material film formed thereon is supported by the support electrode (2). A high-frequency power of a frequency of 40 MHz or above for generating the plasma is applied to the support electrode (2), so that a high-frequency electric field is formed between the support electrode (2) and the counter electrode (16). A process gas is supplied into the process vessel (1) to generate plasma of the process gas by the high-frequency electric field. The organic material film on the substrate (W) is etched with the plasma, with an organic material film serving as a mask. The process gas includes an ionization accelerating gas, such as Ar, that is ionized from a ground state or metastable state with an ionization energy of 10 eV or below and has a maximum ionization cross-section of 2×1016 cm2 or above.
摘要翻译：构成平行板电极的支撑电极（2）和对置电极（16）设置在处理容器（1）中。形成有有机材料膜的基板（W）由支撑电极（2）支撑。在支撑电极（2）上施加用于产生等离子体的频率为40MHz以上的高频电力，使得在支撑电极（2）和对电极（16）之间形成高频电场）。将处理气体供给到处理容器（1）中，以通过高频电场产生处理气体的等离子体。用等离子体对基板（W）上的有机材料膜进行蚀刻，将有机材料膜用作掩模。工艺气体包括电离加速气体，例如Ar，其离子化能为10eV或更低的基态或亚稳态离子化，并且具有最大离子化横截面积为2×10 16 cm 2以上。

30. 发明申请

US20050082256A1 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US20050082256A1
公开(公告)日：2005-04-21
申请号：US10960538
申请日：2004-10-08
申请人： Masanobu Honda , Kazuya Nagaseki , Hisataka Hayashi
发明人： Masanobu Honda , Kazuya Nagaseki , Hisataka Hayashi
IPC分类号： C23F1/00 , H01L21/3065 , H01L21/311
CPC分类号： H01J37/32688 , H01J2237/3347 , H01L21/31138 , H01L21/31144
摘要： The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and plasma-etching the organic-material film of the substrate by means of the plasma partway in order to form a groove having a flat bottom. A frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.
摘要翻译：本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板具有有机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过电场的方法，以及通过等离子体中途等离子体刻蚀基板的有机材料膜以形成具有平坦底部的凹槽。在蚀刻步骤中，施加到至少一个电极的高频电力的频率为50〜150MHz。

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