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21. 发明授权

US09224757B2 DC-DC converter and manufacturing method thereof 有权
标题翻译： DC-DC转换器及其制造方法
公开(公告)号：US09224757B2
公开(公告)日：2015-12-29
申请号：US13307084
申请日：2011-11-30
申请人： Kei Takahashi , Yoshiaki Ito
发明人： Kei Takahashi , Yoshiaki Ito
IPC分类号： G05F1/569 , H01L27/12 , H02M3/158 , H02M3/335 , H02M1/00
CPC分类号： H01L27/1225 , H01L27/1251 , H02M3/158 , H02M3/33523 , H02M2001/0006
摘要： A DC-DC converter is driven by single high input voltage, and includes a voltage converter circuit and a control circuit. The increase of the occupied area of the DC-DC converter is suppressed. The DC-DC converter includes an input terminal to which input voltage is applied; a voltage converter circuit connected to the input terminal, and including a first transistor; a control circuit configured to control the voltage converter circuit, and including a second transistor including a silicon material in a channel formation region; and a third transistor provided between the input terminal and the control circuit, and configured to convert the input voltage into power supply voltage that is lower than the input voltage. The first transistor and the third transistor include an oxide semiconductor material in channel formation regions. The first transistor and the third transistor are stacked over the second transistor with an insulating film provided therebetween.
摘要翻译： DC-DC转换器由单个高输入电压驱动，并且包括电压转换器电路和控制电路。 DC-DC转换器的占用面积的增加被抑制。 DC-DC转换器包括施加输入电压的输入端子; 连接到所述输入端子的电压转换器电路，并且包括第一晶体管; 控制电路，被配置为控制所述电压转换器电路，并且包括在沟道形成区域中包括硅材料的第二晶体管; 以及第三晶体管，其设置在所述输入端子和所述控制电路之间，并且被配置为将所述输入电压转换为低于所述输入电压的电源电压。第一晶体管和第三晶体管包括沟道形成区域中的氧化物半导体材料。第一晶体管和第三晶体管堆叠在第二晶体管上，其间设置有绝缘膜。

22. 发明授权

US09070595B2 Display device and electronic device including the same 有权
公开(公告)号：US09070595B2
公开(公告)日：2015-06-30
申请号：US12945475
申请日：2010-11-12
申请人： Kei Takahashi , Shunpei Yamazaki
发明人： Kei Takahashi , Shunpei Yamazaki
IPC分类号： G09G3/30 , H01L27/12 , G09G3/32 , H01L27/32
摘要： A display device includes a pixel portion including a plurality of pixels each including a first transistor, a second transistor, and a light-emitting element, in which a gate of the first transistor is electrically connected to a scan line, one of a source and a drain of the first transistor is electrically connected to a signal line, and the other of them is electrically connected to a gate of the second transistor; one of a source and a drain of the second transistor is electrically connected to a power supply line and the other of them is electrically connected to the light-emitting element, and the first transistor includes an oxide semiconductor layer. A period when the display device displays a still image includes a period in which output of a signal to all the scan lines in the pixel portion is stopped.

23. 发明授权

US08933349B2 Electrical apparatus and manufacturing process of the same 有权
标题翻译：电气设备和制造工艺相同
公开(公告)号：US08933349B2
公开(公告)日：2015-01-13
申请号：US13485989
申请日：2012-06-01
申请人： Kei Takahashi , Hirohisa Kubota , Tamotsu Tetsuchikawara
发明人： Kei Takahashi , Hirohisa Kubota , Tamotsu Tetsuchikawara
IPC分类号： H01R13/502 , H05K5/00
CPC分类号： H05K5/0013
摘要： An electrical apparatus includes a first half case and a second half case. An end surface at an edge of the first half case and an end surface of the second half case are welded to each other. The first half case has an engaged portion inside thereof. The second half case has, inside thereof, an engaging portion which engages with the engaged portion so as to restrain relative movement of the first half case and the second half case in a direction in which the first half case and the second half case are separated. With this structure, strength of combination of the two half cases can be improved.
摘要翻译：电气设备包括第一半壳体和第二半壳体。第一半壳体的边缘处的端面和第二半壳体的端面彼此焊接。第一半壳体在其内部具有接合部分。第二半壳体在其内部具有与被接合部分接合的接合部分，以便限制第一半壳体和第二半壳体在第一半壳体和第二半壳体分离的方向上的相对运动。利用这种结构，可以提高两种情况的组合强度。

24. 发明授权

US08686413B2 Semiconductor device having oxide semiconductor transistor 有权
公开(公告)号：US08686413B2
公开(公告)日：2014-04-01
申请号：US12894911
申请日：2010-09-30
申请人： Shunpei Yamazaki , Kei Takahashi , Yoshiaki Ito
发明人： Shunpei Yamazaki , Kei Takahashi , Yoshiaki Ito
IPC分类号： H01L29/12 , H01L29/04 , H01L31/036
摘要： It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that overlaps with part of the first conductive layer and has a crystal region in a surface part, second and third conductive layers formed in contact with the oxide semiconductor layer, an insulating layer which covers the oxide semiconductor layer and the second and third conductive layers, and a fourth conductive layer over the insulating layer that overlaps with part of the oxide semiconductor layer.

25. 发明授权

US08421069B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08421069B2
公开(公告)日：2013-04-16
申请号：US12904579
申请日：2010-10-14
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/10 , H01L29/12 , H01L29/04 , H01L31/00 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L29/7869 , H01L21/84 , H01L23/552 , H01L23/60 , H01L23/66 , H01L25/16 , H01L27/0222 , H01L27/10873 , H01L27/12 , H01L27/1225 , H01L28/20 , H01L28/60 , H01L29/78609 , H01L2223/6677 , H01L2924/0002 , H01L2924/00
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized.
摘要翻译：目的是减少用于LSI，CPU或存储器的晶体管的漏电流和寄生电容。包括在LSI，CPU或存储器中的半导体集成电路使用使用氧化物半导体形成的晶体管来制造，所述氧化物半导体是通过从作为电子给体（供体）中除去作为电子给体（供体）的杂质而获得的内在或本质上的半导体氧化物半导体，并且具有比硅半导体更大的能隙，并且形成在半导体衬底上。通过形成在半导体衬底上的晶体管，并且包括具有充分降低的氢浓度的高度净化的氧化物半导体层，可以实现其由漏电流引起的功率消耗低的半导体器件。

26. 发明授权

US08330702B2 Pulse output circuit, display device, and electronic device 有权
标题翻译：脉冲输出电路，显示设备和电子设备
公开(公告)号：US08330702B2
公开(公告)日：2012-12-11
申请号：US12699929
申请日：2010-02-04
申请人： Hiroyuki Miyake , Kei Takahashi
发明人： Hiroyuki Miyake , Kei Takahashi
IPC分类号： G09G3/36
CPC分类号： H03K17/162 , G09G3/3648 , G09G3/3677 , G09G2300/0408 , G09G2300/0819 , G09G2310/0286 , G09G2310/0289 , G09G2320/043 , G09G2320/045 , G11C19/28 , G11C19/285 , H01L27/088 , H01L27/1288 , H01L29/04 , H01L29/78696 , H03K17/687
摘要： An object of the present invention is to suppress deterioration in the thin film transistor. A plurality of pulse output circuits each include first to eleventh thin film transistors is formed. The pulse output circuit is operated on the basis of a plurality of clock signals which control each transistor, the previous stage signal input from a pulse output circuit in the previous stage, the next stage signal input from a pulse output circuit in the next stage, and a reset signal. In addition, a microcrystalline semiconductor is used for a semiconductor layer serving as a channel region of each transistor. Therefore, degradation of characteristics of the transistor can be suppressed.
摘要翻译：本发明的目的是抑制薄膜晶体管的劣化。多个脉冲输出电路各自包括第一至第十一薄膜晶体管。脉冲输出电路基于控制每个晶体管的多个时钟信号，从前一级的脉冲输出电路输入的前级信号，下一级的脉冲输出电路输入的下一级信号，和复位信号。此外，微晶半导体用作用作每个晶体管的沟道区的半导体层。因此，可以抑制晶体管的特性的劣化。

27. 发明申请

US20120053258A1 RESIN COMPOSITION AND FOAMED MOLDED BODY 审中-公开
标题翻译：树脂组合物和发泡模体
公开(公告)号：US20120053258A1
公开(公告)日：2012-03-01
申请号：US13131118
申请日：2010-03-31
申请人： Shun Kayama , Minoru Tomita , Yukiko Shimizu , Terumitsu Kotani , Kei Takahashi
发明人： Shun Kayama , Minoru Tomita , Yukiko Shimizu , Terumitsu Kotani , Kei Takahashi
IPC分类号： C08L23/12 , C08L31/04 , C08L25/06 , C08L75/00 , C08L23/06 , C08K3/26 , C08L55/02
CPC分类号： C08K9/08
摘要： A first resin composition of the present invention is characterized by comprising (A) at least one thermoplastic resin selected from polypropylenes, polystyrenes, acrylonitrile-butadiene-styrene copolymers, polycarbonates, polyethylenes and thermoplastic elastomers, (B) filler such as a crushed shell material or the like, and (C) binder component. A second resin composition of the present invention is characterized by comprising (A′) thermoplastic resin such as an acrylonitrile-butadiene-styrene copolymer or the like and (B′) crushed shell material, wherein the elastic modulus thereof is 1750 to 2950 MPa. A third resin composition of the present invention is characterized by comprising (A″) thermoplastic resin and (B″) crushed shell material, wherein the surface hardness thereof measured using a durometer is 12 to 85. The resin compositions of the present invention can provide molded bodies excellent in gloss, mechanical strength, and dimensional stability.
摘要翻译：本发明的第一种树脂组合物的特征在于包含（A）至少一种选自聚丙烯，聚苯乙烯，丙烯腈 - 丁二烯 - 苯乙烯共聚物，聚碳酸酯，聚乙烯和热塑性弹性体的热塑性树脂，（B）填料如破碎壳材料（C）粘合剂成分。本发明的第二种树脂组合物的特征在于包含（A'）热塑性树脂如丙烯腈 - 丁二烯 - 苯乙烯共聚物等和（B'）破碎的壳材料，其弹性模量为1750至2950MPa。本发明的第三种树脂组合物的特征在于包含（A“）热塑性树脂和（B”）破碎的壳材料，其中使用硬度计测量的表面硬度为12至85.本发明的树脂组合物可提供成型体的光泽度，机械强度和尺寸稳定性优异。

28. 发明申请

US20120032606A1 Light-Emitting Device 有权
标题翻译：发光装置
公开(公告)号：US20120032606A1
公开(公告)日：2012-02-09
申请号：US13279531
申请日：2011-10-24
申请人： Ryota Fukumoto , Hiroyuki Miyake , Yoshifumi Tanada , Kei Takahashi
发明人： Ryota Fukumoto , Hiroyuki Miyake , Yoshifumi Tanada , Kei Takahashi
IPC分类号： H05B37/02
CPC分类号： G09G3/3225 , G09G2300/043 , G09G2300/0866 , G09G2320/0223 , G09G2330/025
摘要： The amplitude of a potential of a signal line is decreased and a scan line driver circuit is prevented from being excessively loaded. A light-emitting device includes a light-emitting element; a first power supply line having a first potential; a second power supply line having a second potential; a first transistor for controlling a connection between the first power supply line and the light-emitting element; a second transistor, which is controlled in accordance with a video signal, whether outputting the second potential applied from the second power supply line or not; a switching element for selecting either the first potential applied from the first power supply line or the output of the second transistor; and a third transistor for selecting whether the first potential or the output of the second transistor which is selected by the switch is applied to a gate of the first transistor.
摘要翻译：信号线的电位的幅度减小，防止扫描线驱动电路过载。发光装置包括发光元件; 具有第一电位的第一电源线; 具有第二电位的第二电源线; 用于控制第一电源线和发光元件之间的连接的第一晶体管; 根据视频信号控制的第二晶体管，是否输出从第二电源线施加的第二电位; 用于选择从第一电源线施加的第一电位或第二晶体管的输出的开关元件; 以及第三晶体管，用于选择由开关选择的第二晶体管的第一电位或输出是施加到第一晶体管的栅极。

29. 发明申请

US20110077313A1 FOAMABLE RESIN COMPOSITION AND FOAMED BODY 审中-公开
标题翻译：可泡沫树脂组合物和泡沫体
公开(公告)号：US20110077313A1
公开(公告)日：2011-03-31
申请号：US12995944
申请日：2009-05-25
申请人： Kei Takahashi , Terumitsu Kotani , Haruki Nishike , Hiroshi Kani , Katsumi Konno
发明人： Kei Takahashi , Terumitsu Kotani , Haruki Nishike , Hiroshi Kani , Katsumi Konno
IPC分类号： C08J9/00
CPC分类号： C08L3/04 , C08J9/0061 , C08J9/0066 , C08J2303/00 , C08J2423/00 , C08J2429/00 , C08J2467/00 , C08L3/06 , C08L3/10 , C08L23/02
摘要： A foamable resin composition according to the present invention comprises 10 parts by weight or less, preferably 0.5 to 8 parts by weight of a biodegradable resin and/or polyolefin resin, 10 to 30 parts by weight of water and 0.01 to 5 parts by weight of an inorganic filler, with respect to 100 parts by weight of a modified starch. The modified starch is preferably at least one of oxidized starches, esterified starches, acetylated starches and cationic starches. The foamable resin composition can maintain strength, etc., of the foamed body obtained at a practical level even though the amount of the biodegradable resin and/or polyolefin resin is reduced as much as possible, and has a cost advantage.
摘要翻译：根据本发明的可发泡树脂组合物包含10重量份或更少，优选0.5至8重量份的可生物降解的树脂和/或聚烯烃树脂，10至30重量份的水和0.01至5重量份的无机填料，相对于100重量份的改性淀粉。改性淀粉优选为氧化淀粉，酯化淀粉，乙酰化淀粉和阳离子淀粉中的至少一种。即使可生物降解的树脂和/或聚烯烃树脂的量尽可能地减少，发泡性树脂组合物也能够保持实用的发泡体的强度等，并且具有成本优势。

30. 发明授权

US07762747B2 Cermet insert and cutting tool 有权
标题翻译：金属陶瓷刀片和刀具
公开(公告)号：US07762747B2
公开(公告)日：2010-07-27
申请号：US11916329
申请日：2006-06-13
申请人： Toshiyuki Taniuchi , Masafumi Fukumura , Kei Takahashi , Tomoaki Shindo , Atsushi Komura , Hiroaki Takashima
发明人： Toshiyuki Taniuchi , Masafumi Fukumura , Kei Takahashi , Tomoaki Shindo , Atsushi Komura , Hiroaki Takashima
IPC分类号： B23B27/14 , C04B35/58
CPC分类号： C22C29/04 , B22F2005/001 , B22F2998/10 , B22F2999/00 , C22C27/04 , Y10T407/1924 , Y10T407/22 , Y10T407/27 , B22F3/02 , B22F3/10 , B22F2201/20 , B22F2201/11 , B22F2201/02
摘要： One aspect of this titanium carbonitride-based cermet insert has a microstructure including 75 to 90 area % of a hard phase and the balance as a binding phase, wherein the hard phase includes a first hard phase in which a core-having structure includes a TiCN phase and a peripheral portion includes a (Ti,W,Ta/Nb)CN phase, a second hard phase including a (Ti,W,Ta/Nb)CN phase, and a third hard phase including a TiCN phase, and the binding phase contains 18 to 33% of Co, 20 to 35% of Ni, 5% or less of Ti and Ta and/or Nb, and 40 to 60 mass % of W. In another aspect of this cermet insert, a total of an amount of Ti converted as carbonitride, an amount of Ta and/or Nb converted as carbide, and an amount of W converted as carbide is 70 to 95 mass %, an amount of W converted as carbide is 20 to 35 mass %, and Co and Ni are 5 to 30 mass %, this cermet insert has a microstructure including a hard phase containing (Ti,W,Ta/Nb)CN and a binding phase containing, as main components thereof, W and Co and/or Ni, and 40 to 65 mass % of the W is contained in the hard phase. This cutting tool includes a holder and the cermet insert described above held and fixed by the holder.
摘要翻译：这种基于碳氮化钛的金属陶瓷插入物的一个方面具有包括硬度相的75〜90面积％，作为结合相的余量的微观结构，其中硬质相包括第一硬质相，其中，核心结构包括TiCN 相和周边部分包括（Ti，W，Ta / Nb）CN相，包括（Ti，W，Ta / Nb）CN相的第二硬质相和包含TiCN相的第三硬质相，相中含有18〜33％的Co，20〜35％的Ni，5％以下的Ti和Ta和/或Nb，以及40〜60质量％的W。在该金属陶瓷插入体的另一方面， Ti转化为碳氮化物的量，作为碳化物转化的Ta和/或Nb的量，碳化物换算的W的量为70〜95质量％，碳化物换算的W的量为20〜35质量％，Co 和Ni为5〜30质量％，该金属陶瓷嵌入体具有包含（Ti，W，Ta / Nb）CN的硬质相和包含W和C的主要成分的结合相的组织 o和/或Ni，并且硬度相中包含W的40〜65质量％。该切削工具包括保持器和由保持器固定和固定的上述金属陶瓷刀片。

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