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21. 发明授权

US08389201B2 Positive resist composition and pattern forming process 有权
标题翻译：正抗蚀剂组成和图案形成工艺
公开(公告)号：US08389201B2
公开(公告)日：2013-03-05
申请号：US12786013
申请日：2010-05-24
申请人： Akinobu Tanaka , Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
发明人： Akinobu Tanaka , Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0395 , G03F7/0397
摘要： The present invention relates to a positive resist composition and to a pattern forming process using the same. The present invention provides: a positive resist composition having an enhanced etching resistance and an excellent resolution and being capable of providing an excellent pattern profile even at a substrate-side boundary face of resist, in photolithography for fine processing, and particularly in lithography adopting, as an exposure source, KrF laser, extreme ultraviolet rays, electron beam, X-rays, or the like; and a pattern forming process utilizing the positive resist composition.
摘要翻译：本发明涉及正性抗蚀剂组合物和使用其的图案形成方法。本发明提供：具有增强的抗蚀刻性和优异分辨率的正型抗蚀剂组合物，并且即使在抗蚀剂的基板侧边界面，也能够在光刻中进行精细加工，并且特别是在光刻中，作为曝光源，KrF激光，极紫外线，电子束，X射线等; 以及利用正性抗蚀剂组合物的图案形成工艺。

22. 发明授权

US08367295B2 Preparation process of chemically amplified resist composition 有权
标题翻译：化学增幅抗蚀剂组合物的制备工艺
公开(公告)号：US08367295B2
公开(公告)日：2013-02-05
申请号：US12110651
申请日：2008-04-28
申请人： Keiichi Masunaga , Takanobu Takeda , Tamotsu Watanabe , Satoshi Watanabe , Ryuji Koitabashi , Osamu Watanabe
发明人： Keiichi Masunaga , Takanobu Takeda , Tamotsu Watanabe , Satoshi Watanabe , Ryuji Koitabashi , Osamu Watanabe
IPC分类号： G03F7/004
CPC分类号： G03F7/0048 , G03F7/0382 , G03F7/0397
摘要： Provided are a preparation method of a resist composition which enables stabilization of a dissolution performance of a resist film obtained from the resist composition thus prepared; and a resist composition obtained by the preparation process and showing small lot-to-lot variations in degradation over time. The process of the present invention is for preparing a chemically amplified resist composition containing a binder, an acid generator, a nitrogenous basic substance and a solvent and it has steps of selecting, as the solvent, a solvent having a peroxide content not greater than an acceptable level, and mixing constituent materials of the resist composition in the selected solvent.
摘要翻译：提供一种抗蚀剂组合物的制备方法，其能够稳定由如此制备的抗蚀剂组合物获得的抗蚀剂膜的溶解性能; 以及通过制备方法获得的抗蚀剂组合物，并且随着时间的推移显示出小的批次间的劣化变化。本发明的方法是制备含有粘合剂，酸产生剂，含氮碱性物质和溶剂的化学放大型抗蚀剂组合物，其具有以下步骤：选择过氧化物含量不大于将所述抗蚀剂组合物的构成材料混合在所选择的溶剂中。

23. 发明申请

US20120196211A1 RESIST PATTERN FORMING PROCESS 有权
标题翻译：电阻图案形成过程
公开(公告)号：US20120196211A1
公开(公告)日：2012-08-02
申请号：US13362294
申请日：2012-01-31
申请人： Keiichi Masunaga , Takeru Watanabe , Satoshi Watanabe , Daisuke Domon
发明人： Keiichi Masunaga , Takeru Watanabe , Satoshi Watanabe , Daisuke Domon
IPC分类号： G03F1/76
CPC分类号： G03F7/40 , G03F7/0045 , G03F7/0392
摘要： A resist pattern is formed by coating a chemically amplified positive resist composition onto a substrate and prebaking to form a resist film, exposing to high-energy radiation, baking and developing with a developer to form a resist pattern, and heating the pattern for profile correction to such an extent that the line width may not undergo a change of at least 10%. An amount of a softening accelerator having a molecular weight of up to 800 is added to the resist composition comprising (A) a base resin, (B) an acid generator, (C) a nitrogen-containing compound, and (D) an organic solvent.
摘要翻译：通过将化学放大的正性抗蚀剂组合物涂布在基材上并预烘烤以形成抗蚀剂膜，暴露于高能量辐射，用显影剂烘烤和显影以形成抗蚀剂图案并加热图案以进行轮廓校正来形成抗蚀剂图案达到线宽可能不会经历至少10％的变化的程度。将一定量的分子量高达800的软化促进剂加入到抗蚀剂组合物中，该抗蚀剂组合物包含（A）基础树脂，（B）酸产生剂，（C）含氮化合物和（D）有机溶剂。

24. 发明申请

US20100291484A1 Negative resist composition, patterning process, and testing process and preparation process of negative resist composition 有权
标题翻译：负性抗蚀剂组成，图案化工艺，负极抗蚀剂组成的测试工艺及制备工艺
公开(公告)号：US20100291484A1
公开(公告)日：2010-11-18
申请号：US12662435
申请日：2010-04-16
申请人： Akinobu Tanaka , Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
发明人： Akinobu Tanaka , Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/30 , G03F7/322
摘要： There is disclosed a negative resist composition comprising at least (A) a base resin that is alkaline-soluble and is made alkaline-insoluble by action of an acid, and/or a combination of a base resin that is alkaline-soluble and is made alkaline-insoluble by reaction with a crosslinker by action of an acid, with a crosslinker, (B) an acid generator, and (C) a compound containing a nitrogen as a basic component, and forming a resist film having the film thickness X (nm) of 50 to 100 nm, wherein, in the case that the resist film is formed from the negative resist composition under the film-forming conditions for the pattern formation, a dissolution rate of the resist film into the alkaline developer used in the development treatment for the pattern formation is 0.0333X−1.0 (nm/second) or more and 0.0667X−1.6 (nm/second) or less. There can be a negative resist composition having excellent etching resistance and resolution and giving a good pattern profile even at the substrate's interface, a patterning process using the same, and a testing process and a preparation process of this negative resist composition.
摘要翻译：公开了一种负性抗蚀剂组合物，其至少包含（A）碱溶性碱性树脂，并且通过酸的作用而成为碱不溶性，和/或碱溶性碱性树脂的组合通过与交联剂的反应，通过与交联剂的反应，（B）酸产生剂和（C）含有氮作为碱性成分的化合物，并且形成具有膜厚度X（ nm）为50〜100nm，其中，在用于图案形成的成膜条件下，由抗蚀剂组合物形成抗蚀剂膜的情况下，抗蚀剂膜在显影剂中使用的碱性显影剂的溶解速度图案形成的处理为0.0333X-1.0（nm /秒）以上且0.0667X-1.6（nm /秒）以下。可以存在耐蚀性和分辨率优异的负光刻胶组合物，即使在基板的界面也能得到良好的图案图案，使用该抗蚀剂组合物的图案化工艺，以及该负型抗蚀剂组合物的测试方法和制备方法。

25. 发明申请

US20080274422A1 PREPARATION PROCESS OF CHEMICALLY AMPLIFIED RESIST COMPOSITION 有权
标题翻译：化学稳定组分的制备方法
公开(公告)号：US20080274422A1
公开(公告)日：2008-11-06
申请号：US12110651
申请日：2008-04-28
申请人： Keiichi Masunaga , Takanobu Takeda , Tamotsu Watanabe , Satoshi Watanabe , Ryuji Koitabashi , Osamu Watanabe
发明人： Keiichi Masunaga , Takanobu Takeda , Tamotsu Watanabe , Satoshi Watanabe , Ryuji Koitabashi , Osamu Watanabe
IPC分类号： G03F7/004
CPC分类号： G03F7/0048 , G03F7/0382 , G03F7/0397
摘要： Provided are a preparation method of a resist composition which enables stabilization of a dissolution performance of a resist film obtained from the resist composition thus prepared; and a resist composition obtained by the preparation process and showing small lot-to-lot variations in degradation over time. The process of the present invention is for preparing a chemically amplified resist composition containing a binder, an acid generator, a nitrogenous basic substance and a solvent and it has steps of selecting, as the solvent, a solvent having a peroxide content not greater than an acceptable level, and mixing constituent materials of the resist composition in the selected solvent.
摘要翻译：提供一种抗蚀剂组合物的制备方法，其能够稳定由如此制备的抗蚀剂组合物获得的抗蚀剂膜的溶解性能; 以及通过制备方法获得的抗蚀剂组合物，并且随着时间的推移显示出小的批次间的劣化变化。本发明的方法是制备含有粘合剂，酸产生剂，含氮碱性物质和溶剂的化学放大型抗蚀剂组合物，其具有以下步骤：选择过氧化物含量不大于将所述抗蚀剂组合物的构成材料混合在所选择的溶剂中。

26. 发明授权

US09244348B2 Chemically amplified negative resist composition and pattern forming process 有权
标题翻译：化学放大负光刻胶组合物和图案形成工艺
公开(公告)号：US09244348B2
公开(公告)日：2016-01-26
申请号：US13371999
申请日：2012-02-13
申请人： Keiichi Masunaga , Satoshi Watanabe , Yoshio Kawai , Luisa Bozano , Ratnam Sooriyakumaran
发明人： Keiichi Masunaga , Satoshi Watanabe , Yoshio Kawai , Luisa Bozano , Ratnam Sooriyakumaran
IPC分类号： G03F7/004 , G03F7/038
CPC分类号： G03F7/0382
摘要： A polymer comprising recurring units having an acid-eliminatable group on a side chain and aromatic ring-bearing cyclic olefin units is used to formulate a chemically amplified negative resist composition. Any size shift between the irradiated pattern and the formed resist which can arise in forming a pattern including isolated feature and isolated space portions is reduced, and a high resolution is obtained.
摘要翻译：使用包含在侧链上具有可酸消除基团的重复单元和含芳环的环烯烃单元的聚合物来配制化学放大的负性抗蚀剂组合物。降低了在形成包括隔离特征和隔离空间部分的图案中可能出现的照射图案和形成的抗蚀剂之间的任何尺寸偏移，并且获得高分辨率。

27. 发明授权

US08835097B2 Sulfonium salt, polymer, chemically amplified resist composition using said polymer, and resist patterning process 有权
标题翻译：使用所述聚合物的锍盐，聚合物，化学放大抗蚀剂组合物和抗蚀剂图案化工艺
公开(公告)号：US08835097B2
公开(公告)日：2014-09-16
申请号：US13476629
申请日：2012-05-21
申请人： Daisuke Domon , Keiichi Masunaga , Satoshi Watanabe
发明人： Daisuke Domon , Keiichi Masunaga , Satoshi Watanabe
IPC分类号： G03F7/004 , C07C309/12 , C07C309/19 , C07C309/22 , C08F20/28 , G03F7/039 , C08F220/38
CPC分类号： G03F7/0392 , C07C309/12 , C07C309/19 , C07C309/22 , C08F20/28 , C08F2220/382 , G03F7/0045 , G03F7/0397 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： There is disclosed a sulfonium salt shown by the following general formula (1). There can be a sulfonium salt capable of introducing an acid-generating unit generating an acid having an appropriate acid strength and not impairing adhesion with a substrate into a base polymer; a polymer using the said sulfonium salt; a chemically amplified resist composition using the said polymer as a base polymer; and a patterning process using the said chemically amplified resist composition.
摘要翻译：公开了由以下通式（1）表示的锍盐。可以是能够引入酸产生单元的锍盐，其产生具有适当的酸强度并且不损害与基材的粘合性的酸成为基础聚合物; 使用所述锍盐的聚合物; 使用所述聚合物作为基础聚合物的化学放大抗蚀剂组合物; 以及使用所述化学放大抗蚀剂组合物的图案化工艺。

28. 发明授权

US08426108B2 Chemically amplified positive resist composition for EB or EUV lithography and patterning process 有权
标题翻译：用于EB或EUV光刻和图案化工艺的化学放大的正性抗蚀剂组合物
公开(公告)号：US08426108B2
公开(公告)日：2013-04-23
申请号：US13027356
申请日：2011-02-15
申请人： Keiichi Masunaga , Satoshi Watanabe , Akinobu Tanaka , Daisuke Domon
发明人： Keiichi Masunaga , Satoshi Watanabe , Akinobu Tanaka , Daisuke Domon
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20
CPC分类号： G03F7/0392 , G03F7/0395 , G03F7/0397
摘要： A chemically amplified positive resist composition for EB or EUV lithography is provided comprising (A) a polymer or a blend of polymers wherein a film of the polymer or polymer blend is insoluble in alkaline developer, but turns soluble under the action of acid, (B) an acid generator, (C) a basic compound, and (D) a solvent. The basic compound (C) is a polymer comprising recurring units bearing a side chain having a secondary or tertiary amine structure as a basic active site and constitutes a part or the entirety of the polymer or polymers as component (A).
摘要翻译：提供了用于EB或EUV光刻的化学放大型正性抗蚀剂组合物，其包含（A）聚合物或聚合物共混物，其中聚合物或聚合物共混物的膜不溶于碱性显影剂，但在酸的作用下变得可溶，（B ）酸产生剂，（C）碱性化合物和（D）溶剂。碱性化合物（C）是包含具有作为碱性活性位点的具有仲胺结构或叔胺结构的侧链的重复单元并且构成作为组分（A）的聚合物或聚合物的一部分或全部的聚合物。

29. 发明申请

US20120219887A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：化学放大抗负荷组合物和模式过程
公开(公告)号：US20120219887A1
公开(公告)日：2012-08-30
申请号：US13407062
申请日：2012-02-28
申请人： Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
发明人： Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
IPC分类号： G03F7/20 , G03F7/004 , G03F1/76 , C08F214/18
CPC分类号： G03F7/0045 , C08F26/06 , C08F214/18 , C08F220/30 , G03F7/0046 , G03F7/0382 , G03F7/2041 , H01L21/0271 , Y10S430/114
摘要： A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition ensures an effective sensitivity, makes more uniform the distribution and diffusion of the acid generating component in a resist film, and suppresses deactivation of acid at the substrate interface. The pattern can be formed to a profile which is improved in LER and undercut.
摘要翻译：使用包含0.5-10摩尔％具有产酸能力的重复单元和50-99.5摩尔％的在碱性显影剂中溶解的重复单元的聚合物来配制化学放大的负性抗蚀剂组合物。当在光刻工艺中使用时，组合物确保有效的灵敏度，使酸产生组分在抗蚀剂膜中的分布和扩散更均匀，并抑制底物界面处酸的失活。该图案可以形成为在LER和底切方面得到改进的轮廓。

30. 发明申请

US20110200942A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION FOR EB OR EUV LITHOGRAPHY AND PATTERNING PROCESS 有权
标题翻译：用于EB或EUV光刻和图案处理的化学放大耐负荷组合物
公开(公告)号：US20110200942A1
公开(公告)日：2011-08-18
申请号：US13027446
申请日：2011-02-15
申请人： Keiichi Masunaga , Satoshi Watanabe , Akinobu Tanaka , Daisuke Domon
发明人： Keiichi Masunaga , Satoshi Watanabe , Akinobu Tanaka , Daisuke Domon
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0382 , G03F7/038
摘要： A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble polymer, (B) an acid generator, and (C) a nitrogen-containing compound as a basic component, the polymer (A) turning alkali insoluble under the catalysis of acid. A basic polymer having a secondary or tertiary amine structure on a side chain serves as components (A) and (C). Processing the negative resist composition by EB or EUV lithography process may form a fine size resist pattern with advantages including uniform diffusion of base, improved LER, controlled deactivation of acid at the substrate interface, and a reduced degree of undercut.
摘要翻译：提供一种化学放大型负性抗蚀剂组合物，其包含（A）碱溶性聚合物，（B）酸产生剂和（C）含氮化合物作为碱性成分，所述聚合物（A）在催化下使碱不溶的酸。在侧链上具有仲胺结构或叔胺结构的基本聚合物用作组分（A）和（C）。通过EB或EUV光刻工艺处理负光刻胶组合物可形成精细尺寸的抗蚀剂图案，其优点包括碱的均匀扩散，改进的LER，在底物界面处控制的酸的失活，以及降低的底切度。

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