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21. 发明授权

US08384006B2 Image pickup apparatus 有权
标题翻译：摄像设备
公开(公告)号：US08384006B2
公开(公告)日：2013-02-26
申请号：US13326152
申请日：2011-12-14
申请人： Yuichiro Yamashita , Yusuke Onuki
发明人： Yuichiro Yamashita , Yusuke Onuki
IPC分类号： H01L27/00
CPC分类号： H04N5/3765 , H04N5/361
摘要： An apparatus includes pixels each having a transistor that transfers a charge of a photoelectric conversion unit, an amplification unit that receives the transferred charge, a scanning unit that supplies, to the transistor, a conductive pulse, a non-conductive pulse, and an intermediate-level pulse having a peak value between the conductive pulse and the non-conductive pulse, a generating unit that generates an image signal using a signal based on a charge transferred in response to the conductive and intermediate-level pulses, and a control unit that changes at least one of a pulse width of the intermediate-level pulse and the peak value in accordance with information on the detected temperature. The conductive and intermediate-level pulses are supplied to the transistor during a light shielding period of the photoelectric conversion unit.
摘要翻译：一种装置，包括各自具有传输光电转换单元的电荷的晶体管，接收所传送的电荷的放大单元，向晶体管提供导通脉冲，非导通脉冲和中间电路的扫描单元具有导通脉冲和非导通脉冲之间的峰值的高电平脉冲，产生单元，其使用基于响应于导电和中间电平脉冲传送的电荷的信号产生图像信号;以及控制单元，根据关于检测到的温度的信息来改变中间电平脉冲的脉冲宽度和峰值中的至少一个。在光电转换单元的光屏蔽周期期间，将导电和中间级脉冲提供给晶体管。

22. 发明授权

US08101899B2 Image pickup apparatus 有权
标题翻译：摄像设备
公开(公告)号：US08101899B2
公开(公告)日：2012-01-24
申请号：US12574618
申请日：2009-10-06
申请人： Yuichiro Yamashita , Yusuke Onuki
发明人： Yuichiro Yamashita , Yusuke Onuki
IPC分类号： H01L27/00
CPC分类号： H04N5/3765 , H04N5/361
摘要： An apparatus includes pixels each having a transistor that transfers a charge of a photoelectric conversion unit, an amplification unit that receives the transferred charge, a scanning unit that supplies, to the transistor, a conductive pulse, a non-conductive pulse, and an intermediate-level pulse having a peak value between the conductive pulse and the non-conductive pulse, a generating unit that generates an image signal using a signal based on a charge transferred in response to the conductive and intermediate-level pulses, and a control unit that changes at least one of a pulse width of the intermediate-level pulse and the peak value in accordance with information on the detected temperature. The conductive and intermediate-level pulses are supplied to the transistor during a light shielding period of the photoelectric conversion unit.
摘要翻译：一种装置，包括各自具有传输光电转换单元的电荷的晶体管，接收所传送的电荷的放大单元，向晶体管提供导通脉冲，非导通脉冲和中间电路的扫描单元具有导通脉冲和非导通脉冲之间的峰值的高电平脉冲，产生单元，其使用基于响应于导电和中间电平脉冲传送的电荷的信号产生图像信号;以及控制单元，根据关于检测到的温度的信息来改变中间电平脉冲的脉冲宽度和峰值中的至少一个。在光电转换单元的光屏蔽周期期间，将导电和中间级脉冲提供给晶体管。

23. 发明申请

US20100090092A1 IMAGE PICKUP APPARATUS 有权
标题翻译：图像拾取装置
公开(公告)号：US20100090092A1
公开(公告)日：2010-04-15
申请号：US12574618
申请日：2009-10-06
申请人： Yuichiro Yamashita , Yusuke Onuki
发明人： Yuichiro Yamashita , Yusuke Onuki
IPC分类号： H01L27/00
CPC分类号： H04N5/3765 , H04N5/361
摘要： An apparatus includes pixels each having a transistor that transfers a charge of a photoelectric conversion unit, an amplification unit that receives the transferred charge, a scanning unit that supplies, to the transistor, a conductive pulse, a non-conductive pulse, and an intermediate-level pulse having a peak value between the conductive pulse and the non-conductive pulse, a generating unit that generates an image signal using a signal based on a charge transferred in response to the conductive and intermediate-level pulses, and a control unit that changes at least one of a pulse width of the intermediate-level pulse and the peak value in accordance with information on the detected temperature. The conductive and intermediate-level pulses are supplied to the transistor during a light shielding period of the photoelectric conversion unit.
摘要翻译：一种装置，包括各自具有传输光电转换单元的电荷的晶体管，接收所传送的电荷的放大单元，向晶体管提供导通脉冲，非导通脉冲和中间电路的扫描单元具有导通脉冲和非导通脉冲之间的峰值的高电平脉冲，产生单元，其使用基于响应于导电和中间电平脉冲传送的电荷的信号产生图像信号;以及控制单元，根据关于检测到的温度的信息来改变中间电平脉冲的脉冲宽度和峰值中的至少一个。在光电转换单元的光屏蔽周期期间，将导电和中间级脉冲提供给晶体管。

24. 发明申请

US20090284632A1 DRIVING METHOD OF SOLID-STATE IMAGING APPARATUS AND SOLID-STATE IMAGING APPARATUS 有权
标题翻译：固态成像装置和固态成像装置的驱动方法
公开(公告)号：US20090284632A1
公开(公告)日：2009-11-19
申请号：US12437821
申请日：2009-05-08
申请人： Yusuke Onuki , Yuichiro Yamashita
发明人： Yusuke Onuki , Yuichiro Yamashita
IPC分类号： H04N5/335
CPC分类号： H04N5/3592 , H01L27/14609 , H04N5/353 , H04N5/374
摘要： A solid-state imaging apparatus comprises a pixel portion including a plurality of pixels, wherein each pixel including a photoelectric conversion portion, an accumulation portion for accumulating the charge, a first transfer portion connecting the photoelectric conversion portion to the accumulation portion, a second transfer portion connecting the accumulation portion to a floating diffusion portion, and a third transfer portion connecting the photoelectric conversion portion to a power source, and wherein, from a state where no potential barrier is formed in the second transfer portion, a potential barrier is formed in the second transfer portion under a condition that a potential barrier is formed in the first transfer portion and no potential barrier is formed in the third transfer portion, and then a potential barrier is formed in the third transfer portion, thereby the operation of accumulating charges in the pixels is started.
摘要翻译：固体摄像装置包括像素部分，其包括多个像素，其中每个像素包括光电转换部分，用于累积电荷的累加部分，将光电转换部分连接到累积部分的第一传送部分，第二传输将所述累积部分连接到浮动扩散部分的部分，以及将所述光电转换部分连接到电源的第三传送部分，并且其中，从在所述第二传送部分中没有形成势垒的状态，形成势垒第二转印部分在第一转印部分中形成势垒并且在第三转印部分中没有形成势垒的条件下形成第二转印部分，然后在第三转印部分中形成势垒，由此在第像素启动。

25. 发明申请

US20130089975A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20130089975A1
公开(公告)日：2013-04-11
申请号：US13610142
申请日：2012-09-11
申请人： Yusuke Onuki , Takehito Okabe , Hideaki Ishino
发明人： Yusuke Onuki , Takehito Okabe , Hideaki Ishino
IPC分类号： H01L21/28
CPC分类号： H01L21/28247 , H01L27/14649 , H01L27/14689 , H01L29/6656 , H01L29/7833
摘要： A method for manufacturing a semiconductor device having a MOS transistor, includes forming a gate electrode material layer on a first insulating film formed on a semiconductor substrate, forming an etching mask on the gate electrode material layer, forming a gate electrode by patterning the gate electrode material layer such that a protective film that protects at least a lower portion of a side face of the gate electrode and a portion of the first insulating film, which is adjacent to the side face, is formed while the gate electrode material layer is patterned, forming a second insulating film on the semiconductor substrate on which the gate electrode is formed, and forming an interlayer insulation film on the second insulating film.
摘要翻译：一种制造具有MOS晶体管的半导体器件的方法，包括在形成在半导体衬底上的第一绝缘膜上形成栅电极材料层，在栅电极材料层上形成蚀刻掩模，通过图案化栅电极形成栅电极材料层，使得在对栅电极材料层进行图案化的同时形成保护栅电极的侧面的至少下部和与侧面相邻的第一绝缘膜的一部分的保护膜，在其上形成有栅电极的半导体衬底上形成第二绝缘膜，并在第二绝缘膜上形成层间绝缘膜。

26. 发明授权

US08551873B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08551873B2
公开(公告)日：2013-10-08
申请号：US13610142
申请日：2012-09-11
申请人： Yusuke Onuki , Takehito Okabe , Hideaki Ishino
发明人： Yusuke Onuki , Takehito Okabe , Hideaki Ishino
IPC分类号： H01L21/28
CPC分类号： H01L21/28247 , H01L27/14649 , H01L27/14689 , H01L29/6656 , H01L29/7833
摘要： A method for manufacturing a semiconductor device having a MOS transistor, includes forming a gate electrode material layer on a first insulating film formed on a semiconductor substrate, forming an etching mask on the gate electrode material layer, forming a gate electrode by patterning the gate electrode material layer such that a protective film that protects at least a lower portion of a side face of the gate electrode and a portion of the first insulating film, which is adjacent to the side face, is formed while the gate electrode material layer is patterned, forming a second insulating film on the semiconductor substrate on which the gate electrode is formed, and forming an interlayer insulation film on the second insulating film.
摘要翻译：一种制造具有MOS晶体管的半导体器件的方法，包括在形成在半导体衬底上的第一绝缘膜上形成栅电极材料层，在栅电极材料层上形成蚀刻掩模，通过图案化栅电极形成栅电极材料层，使得在对栅电极材料层进行图案化的同时形成保护栅电极的侧面的至少下部和与侧面相邻的第一绝缘膜的一部分的保护膜，在其上形成有栅电极的半导体衬底上形成第二绝缘膜，并在第二绝缘膜上形成层间绝缘膜。

27. 发明授权

US08501520B2 Manufacturing method for a solid-state image sensor 有权
标题翻译：固态图像传感器的制造方法
公开(公告)号：US08501520B2
公开(公告)日：2013-08-06
申请号：US12697420
申请日：2010-02-01
申请人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
发明人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
IPC分类号： H01L51/40
CPC分类号： H01L27/14689 , H01L21/26513 , H01L21/324 , H01L27/14621 , H01L27/14643 , H01L27/14698
摘要： A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.
摘要翻译：一种固态图像传感器的制造方法，该方法包括以下步骤：利用第一掩模，通过用第一导电类型的杂质的离子注入半导体衬底，在光电转换单元中形成电荷存储区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 通过使用第二掩模将具有第二导电类型的杂质的离子注入半导体衬底来形成电荷存储区域的表面区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 以及在形成表面区域的步骤之后依次形成在小于800℃的温度下覆盖光电转换单元的抗反射膜。

28. 发明申请

US20100203667A1 MANUFACTURING METHOD FOR A SOLID-STATE IMAGE SENSOR 有权
标题翻译：一种固态图像传感器的制造方法
公开(公告)号：US20100203667A1
公开(公告)日：2010-08-12
申请号：US12697420
申请日：2010-02-01
申请人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
发明人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
IPC分类号： H01L31/18 , H01L21/265
CPC分类号： H01L27/14689 , H01L21/26513 , H01L21/324 , H01L27/14621 , H01L27/14643 , H01L27/14698
摘要： A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.
摘要翻译：一种固态图像传感器的制造方法，该方法包括以下步骤：利用第一掩模，通过用第一导电类型的杂质的离子注入半导体衬底，在光电转换单元中形成电荷存储区; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 通过使用第二掩模将具有第二导电类型的杂质的离子注入半导体衬底来形成电荷存储区域的表面区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 以及在形成表面区域的步骤之后依次形成在小于800℃的温度下覆盖光电转换单元的抗反射膜。

29. 发明申请

US20120312432A1 METALLIC MATERIAL AS A SOLID SOLUTION HAVING A BODY-CENTERED CUBIC (BCC) STRUCTURE, AN ORIENTATION OF CRYSTAL AXIS <001> OF WHICH IS CONTROLLED, AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：金属材料作为具有体中央立方体（BCC）结构的固体溶液，被控制的晶体轴的方向及其制造方法
公开(公告)号：US20120312432A1
公开(公告)日：2012-12-13
申请号：US13580722
申请日：2011-02-28
申请人： Hiroshi Fukutomi , Kazuto Okayasu , Yusuke Onuki
发明人： Hiroshi Fukutomi , Kazuto Okayasu , Yusuke Onuki
IPC分类号： C21D8/00
CPC分类号： C21D8/12 , B21B3/02 , C21D7/13 , C21D8/1205 , C21D8/1222 , C21D2201/05 , C22C38/004 , C22C38/02 , C22C38/06
摘要： An orientation of crystal axis of the metallic material as a solid solution having a structure of body-centered cubic (BCC) is arranged along a work surface of the metallic material by hot rolling process in a temperature range of structuring the metallic material to be BCC single phase solid solution. For example, Fe-Si alloy as the metallic material is heated in the temperature range for BCC single phase solid solution, and processed so as to arrange the orientation of crystal axis along the work surface by pressing the BCC single phase solid solution in a strain rate to maintain work condition for controlling motion of dislocation by atmosphere of solute atom generated in BCC single solid solution and migrating grain boundary by strain energy stored in a crystal grain as driving force.
摘要翻译：在金属材料的结构的温度范围内，通过热轧工艺沿着金属材料的工作表面布置作为具有体心立方（BCC）结构的固溶体的金属材料的晶轴<001>的取向，成为BCC单相固溶体。例如，作为金属材料的Fe-Si合金在BCC单相固溶体的温度范围内被加热，进行加工，以通过压制BCC单相固溶体沿着工作面排列晶轴<001>的取向在应变速率下保持工作条件，以控制由BCC单固溶体中产生的溶质原子大气中的位错运动和通过存储在晶粒中的应变能迁移晶界作为驱动力。

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