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21. 发明授权

US07795617B2 Semiconductor device, IC card, IC tag, RFID, transponder, paper money, valuable securities, passport, electronic device, bag, and clothes 有权
标题翻译：半导体器件，IC卡，IC标签，RFID，应答器，纸币，有价值的证券，护照，电子设备，袋子和衣服
公开(公告)号：US07795617B2
公开(公告)日：2010-09-14
申请号：US11256267
申请日：2005-10-24
申请人： Jun Koyama , Hiroko Abe , Mikio Yukawa , Yuji Iwaki , Shunpei Yamazaki
发明人： Jun Koyama , Hiroko Abe , Mikio Yukawa , Yuji Iwaki , Shunpei Yamazaki
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00
CPC分类号： H01L27/285 , B82Y10/00 , G11C13/0014 , G11C13/0059 , H01L28/10
摘要： It is an object to provide a semiconductor device the data writing of which can be performed except in manufacturing and the counterfeiting of which by rewriting can be prevented. Furthermore, it is another object of the invention to provide a semiconductor device constituted by an organic memory having a simple structure at low cost. A memory cell is constituted by connecting a transistor in parallel or series to an organic element having an organic compound layer, and each memory cell is connected in series or parallel to constitute a NAND memory or a NOR memory. The organic element can change its electrical property irreversibly by application of a current or a voltage, irradiation of light, or the like.
摘要翻译：本发明的目的是提供一种半导体器件，除了制造之外，可以执行其数据写入，并且可以防止通过重写的伪造的伪造的半导体器件。此外，本发明的另一个目的是提供一种由具有简单结构的有机存储器以低成本构成的半导体器件。存储单元通过将具有有机化合物层的有机元件并联或串联连接的晶体管构成，并且每个存储单元串联或并联连接以构成NAND存储器或NOR存储器。有机元素可以通过施加电流或电压，光的照射等而不可逆地改变其电性质。

22. 发明授权

US08890407B2 Semiconductor device and light-emitting device 有权
标题翻译：半导体器件和发光器件
公开(公告)号：US08890407B2
公开(公告)日：2014-11-18
申请号：US13464969
申请日：2012-05-05
申请人： Hiroko Abe , Satoshi Seo , Shunpei Yamazaki
发明人： Hiroko Abe , Satoshi Seo , Shunpei Yamazaki
IPC分类号： H05B33/00 , H01L33/26 , H01L33/08 , H01L33/40 , G09G3/32 , H01L27/12 , G09G3/20
CPC分类号： H01L27/12 , G09G3/2022 , G09G3/3258 , G09G2300/0847 , G09G2310/0248 , G09G2310/0251 , H01L27/1214 , Y10S428/917
摘要： One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, a part of the electrode is exposed by the opening portion of the partition layer. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element and a transistor. The electrode and the transistor are connected electrically to each other. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, the second layer is exposed by the opening portion of the partition layer.
摘要翻译：本发明的半导体器件的一个特征是包括用作发光元件的电极的电极。电极包括第一层和第二层。此外，电极的端部被具有开口部分的隔离层覆盖。此外，电极的一部分被分隔层的开口部分露出。本发明的半导体器件的一个特征是包括用作发光元件和晶体管的电极的电极。电极和晶体管彼此电连接。电极包括第一层和第二层。此外，电极的端部被具有开口部分的隔离层覆盖。此外，第二层被分隔层的开口部分暴露。

23. 发明授权

US07793848B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US07793848B2
公开(公告)日：2010-09-14
申请号：US11587531
申请日：2005-11-28
申请人： Hiroko Abe , Mikio Yukawa , Ryoji Nomura , Satoshi Seo , Shunpei Yamazaki
发明人： Hiroko Abe , Mikio Yukawa , Ryoji Nomura , Satoshi Seo , Shunpei Yamazaki
IPC分类号： G06K19/06
CPC分类号： H01L27/10 , B82Y10/00 , G11C13/0004 , G11C13/0007 , G11C13/0014 , G11C17/16 , G11C2213/32 , G11C2213/77 , G11C2213/79 , H01L27/12 , H01L27/28 , H01L27/283 , H01L29/78645 , H01L51/0059
摘要： It is an object of the present invention to provide a semiconductor device having a memory circuit which is nonvolatile and able to be written additionally, an antenna which can be easily manufactured, and to provide a manufacturing method thereof. In addition, it is an object of the present invention to prevent unauthorized rewriting of information of a wireless chip and forgery of a wireless chip itself and to ensure a security of a wireless chip. In view of the foregoing, the present invention provides an IC tag in which information thereof is identified by wireless communication signal and also information of a memory in an IC tag (a memory which can not be rewritten) is identified by an optical reading device. A memory in an IC tag according to the present invention has an identification surface with which information can be identified by an optical reading device.
摘要翻译：本发明的目的是提供一种具有非易失性且能够被写入的存储电路的半导体器件，可容易地制造的天线，并提供其制造方法。此外，本发明的目的是防止无线芯片的信息的未经授权的重写和无线芯片本身的伪造并且确保无线芯片的安全性。鉴于上述情况，本发明提供了一种IC标签，其中通过无线通信信号识别信息，并且还通过光学读取装置识别IC标签（不能被重写的存储器）中的存储器的信息。根据本发明的IC标签中的存储器具有可由光学读取装置识别信息的识别表面。

24. 发明授权

US08248392B2 Light emitting device using light emitting element and driving method of light emitting element, and lighting apparatus 有权
标题翻译：使用发光元件的发光装置和发光元件的驱动方法以及照明装置
公开(公告)号：US08248392B2
公开(公告)日：2012-08-21
申请号：US11197371
申请日：2005-08-05
申请人： Shunpei Yamazaki , Satoshi Seo , Hiroko Abe
发明人： Shunpei Yamazaki , Satoshi Seo , Hiroko Abe
IPC分类号： G09G5/00
CPC分类号： G09G3/3258 , G09G2300/0842 , G09G2300/0861 , G09G2300/0885 , G09G2310/0251 , G09G2320/0233 , G09G2320/029 , G09G2320/041 , G09G2320/043 , H05B33/0896
摘要： It is an object of the present invention to provide a light-emitting device including a light-emitting element with smaller luminance degradation by contriving a driving means. In addition, it is an object of the present invention to provide a driving method for reducing luminance degradation of a light-emitting element.In the present invention, the current density J of a current flowing in a light-emitting element is increased with time in accordance with the following formula (1), where J0 is an initialization of current density in the light-emitting element, t is an emitting time, and k and β are individually a positive parameter determined by characteristics of the light-emitting element. J=J0·exp [(k·t)β] (1)
摘要翻译：本发明的目的是提供一种发光装置，其包括通过设计驱动装置而具有较低亮度劣化的发光元件。此外，本发明的目的是提供一种用于降低发光元件的亮度劣化的驱动方法。在本发明中，根据下式（1），流过发光元件的电流的电流密度J随时间增加，其中J0是发光元件中的电流密度的初始化，t是发射时间，k和＆bgr; 分别是由发光元件的特性确定的正参数。 J = J0·exp [（k·t）＆bgr;]（1）

25. 发明授权

US08174178B2 Semiconductor device and light-emitting device 有权
标题翻译：半导体器件和发光器件
公开(公告)号：US08174178B2
公开(公告)日：2012-05-08
申请号：US12727386
申请日：2010-03-19
申请人： Hiroko Abe , Satoshi Seo , Shunpei Yamazaki
发明人： Hiroko Abe , Satoshi Seo , Shunpei Yamazaki
IPC分类号： H01J33/00
CPC分类号： H01L27/12 , G09G3/2022 , G09G3/3258 , G09G2300/0847 , G09G2310/0248 , G09G2310/0251 , H01L27/1214 , Y10S428/917
摘要： The present invention provides a semiconductor device by which a light-emitting device that is unlikely to cause defects such as a short circuit, can be manufactured. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, a part of the electrode is exposed by the opening portion of the partition layer. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element and a transistor. The electrode and the transistor are connected electrically to each other. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, the second layer is exposed by the opening portion of the partition layer.
摘要翻译：本发明提供一种可以制造不太可能引起诸如短路等缺陷的发光装置的半导体装置。本发明的半导体器件的一个特征是包括用作发光元件的电极的电极。电极包括第一层和第二层。此外，电极的端部被具有开口部分的隔离层覆盖。此外，电极的一部分被分隔层的开口部分露出。本发明的半导体器件的一个特征是包括用作发光元件和晶体管的电极的电极。电极和晶体管彼此电连接。电极包括第一层和第二层。此外，电极的端部被具有开口部分的隔离层覆盖。此外，第二层被分隔层的开口部分暴露。

26. 发明授权

US07683532B2 Semiconductor device and light emitting device 有权
标题翻译：半导体器件和发光器件
公开(公告)号：US07683532B2
公开(公告)日：2010-03-23
申请号：US11254394
申请日：2005-10-20
申请人： Hiroko Abe , Satoshi Seo , Shunpei Yamazaki
发明人： Hiroko Abe , Satoshi Seo , Shunpei Yamazaki
IPC分类号： H05B33/00
CPC分类号： H01L27/12 , G09G3/2022 , G09G3/3258 , G09G2300/0847 , G09G2310/0248 , G09G2310/0251 , H01L27/1214 , Y10S428/917
摘要： The present invention provides a semiconductor device by which a light-emitting device that is unlikely to cause defects such as a short circuit, can be manufactured. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, a part of the electrode is exposed by the opening portion of the partition layer. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element and a transistor. The electrode and the transistor are connected electrically to each other. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, the second layer is exposed by the opening portion of the partition layer.
摘要翻译：本发明提供一种可以制造不太可能引起诸如短路等缺陷的发光装置的半导体装置。本发明的半导体器件的一个特征是包括用作发光元件的电极的电极。电极包括第一层和第二层。此外，电极的端部被具有开口部分的隔离层覆盖。此外，电极的一部分被分隔层的开口部分露出。本发明的半导体器件的一个特征是包括用作发光元件和晶体管的电极的电极。电极和晶体管彼此电连接。电极包括第一层和第二层。此外，电极的端部被具有开口部分的隔离层覆盖。此外，第二层被分隔层的开口部分暴露。

27. 发明申请

US20060097623A1 Semiconductor device and light emitting device 有权
标题翻译：半导体器件和发光器件
公开(公告)号：US20060097623A1
公开(公告)日：2006-05-11
申请号：US11254394
申请日：2005-10-20
申请人： Hiroko Abe , Satoshi Seo , Shunpei Yamazaki
发明人： Hiroko Abe , Satoshi Seo , Shunpei Yamazaki
IPC分类号： H01L27/00 , H01J1/62
CPC分类号： H01L27/12 , G09G3/2022 , G09G3/3258 , G09G2300/0847 , G09G2310/0248 , G09G2310/0251 , H01L27/1214 , Y10S428/917
摘要： The present invention provides a semiconductor device by which a light-emitting device that is unlikely to cause defects such as a short circuit, can be manufactured. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, a part of the electrode is exposed by the opening portion of the partition layer. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element and a transistor. The electrode and the transistor are connected electrically to each other. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, the second layer is exposed by the opening portion of the partition layer.
摘要翻译：本发明提供一种可以制造不太可能引起诸如短路等缺陷的发光装置的半导体装置。本发明的半导体器件的一个特征是包括用作发光元件的电极的电极。电极包括第一层和第二层。此外，电极的端部被具有开口部分的隔离层覆盖。此外，电极的一部分被分隔层的开口部分露出。本发明的半导体器件的一个特征是包括用作发光元件和晶体管的电极的电极。电极和晶体管彼此电连接。该电极包括第一层和第二层。此外，电极的端部被具有开口部分的隔离层覆盖。此外，第二层被分隔层的开口部分暴露。

28. 发明申请

US20060033452A1 Light emitting device using light emitting element and driving method of light emitting element, and lighting apparatus 有权
标题翻译：使用发光元件的发光装置和发光元件的驱动方法以及照明装置
公开(公告)号：US20060033452A1
公开(公告)日：2006-02-16
申请号：US11197371
申请日：2005-08-05
申请人： Shunpei Yamazaki , Satoshi Seo , Hiroko Abe
发明人： Shunpei Yamazaki , Satoshi Seo , Hiroko Abe
IPC分类号： H05B37/02
CPC分类号： G09G3/3258 , G09G2300/0842 , G09G2300/0861 , G09G2300/0885 , G09G2310/0251 , G09G2320/0233 , G09G2320/029 , G09G2320/041 , G09G2320/043 , H05B33/0896
摘要： It is an object of the present invention to provide a light-emitting device including a light-emitting element with smaller luminance degradation by contriving a driving means. In addition, it is an object of the present invention to provide a driving method for reducing luminance degradation of a light-emitting element. In the present invention, the current density J of a current flowing in a light-emitting element is increased with time in accordance with the following formula (1), where J0 is an initialization of current density in the light-emitting element, t is an emitting time, and k and β are individually a positive parameter determined by characteristics of the light-emitting element. J=J0·exp [(k·t)β] (1)
摘要翻译：本发明的目的是提供一种发光装置，其包括通过设计驱动装置而具有较低亮度劣化的发光元件。此外，本发明的目的是提供一种用于降低发光元件的亮度劣化的驱动方法。在本发明中，根据下式（1），流过发光元件的电流的电流密度J随时间增加，其中J <0>是电流密度的初始化发光元件t是发光时间，k和β分别是由发光元件的特性确定的正参数。 <？in-line-formula description =“In-line Formulas”end =“lead”？> J = J .exp [（kt））<？in-line-formula description =“In-line Formulas”end =“tail”？>

29. 发明申请

US20100244003A1 Semiconductor Device and Light-Emitting Device 有权
标题翻译：半导体器件和发光器件
公开(公告)号：US20100244003A1
公开(公告)日：2010-09-30
申请号：US12727386
申请日：2010-03-19
申请人： Hiroko Abe , Satoshi Seo , Shunpei Yamazaki
发明人： Hiroko Abe , Satoshi Seo , Shunpei Yamazaki
IPC分类号： H01L51/50 , H01L33/00
CPC分类号： H01L27/12 , G09G3/2022 , G09G3/3258 , G09G2300/0847 , G09G2310/0248 , G09G2310/0251 , H01L27/1214 , Y10S428/917
摘要： The present invention provides a semiconductor device by which a light-emitting device that is unlikely to cause defects such as a short circuit, can be manufactured. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, a part of the electrode is exposed by the opening portion of the partition layer. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element and a transistor. The electrode and the transistor are connected electrically to each other. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, the second layer is exposed by the opening portion of the partition layer.
摘要翻译：本发明提供一种可以制造不太可能引起诸如短路等缺陷的发光装置的半导体装置。本发明的半导体器件的一个特征是包括用作发光元件的电极的电极。电极包括第一层和第二层。此外，电极的端部被具有开口部分的隔离层覆盖。此外，电极的一部分被分隔层的开口部分露出。本发明的半导体器件的一个特征是包括用作发光元件和晶体管的电极的电极。电极和晶体管彼此电连接。电极包括第一层和第二层。此外，电极的端部被具有开口部分的隔离层覆盖。此外，第二层被分隔层的开口部分暴露。

30. 发明授权

US07505487B2 Laser oscillator including phosphorescent material 有权
标题翻译：激光振荡器包括磷光材料
公开(公告)号：US07505487B2
公开(公告)日：2009-03-17
申请号：US10822005
申请日：2004-04-12
申请人： Hiroko Abe , Akihisa Shimomura , Satoshi Seo , Shunpei Yamazaki
发明人： Hiroko Abe , Akihisa Shimomura , Satoshi Seo , Shunpei Yamazaki
IPC分类号： H01S3/30
CPC分类号： H01S5/041 , H01S3/14 , H01S3/1628
摘要： To provide a laser oscillator that has an oscillation wavelength in a visible region, and can enhance a conversion efficiency of photon output, and further suppress power consumption. The laser oscillator comprises a light emitting element formed on a substrate, and an optical resonator. The light emitting element includes a luminescent layer, an anode and a cathode, in which the luminescent layer is interposed between the anode and the cathode. The luminescent layer comprises a host material and a phosphorescent material, which is dispersed into the host material at a concentration of not smaller than 10 wt %. The anode and the cathode comprises a light transmitting property. In luminescence from the excimer state of the phosphorescent material, unidirectional light that intersects with the luminescent layer is amplified by the optical resonator.
摘要翻译：提供在可见光区域具有振荡波长的激光振荡器，能够提高光子输出的转换效率，进一步抑制功耗。激光振荡器包括形成在基板上的发光元件和光谐振器。发光元件包括发光层，阳极和阴极，发光层置于阳极和阴极之间。发光层包括以不小于10重量％的浓度分散在主体材料中的主体材料和磷光材料。阳极和阴极包括透光性。在来自磷光材料的准分子状态的发光中，与发光层相交的单向光被光学谐振器放大。

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