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    • 23. 发明授权
    • Method of manufacturing thin film diode
    • 制造薄膜二极管的方法
    • US6040201A
    • 2000-03-21
    • US931972
    • 1997-09-15
    • Yuichi AkibaMasafumi Ide
    • Yuichi AkibaMasafumi Ide
    • G02F1/1365H01L21/329H01L21/77H01L21/84H01L27/12H01L21/00
    • H01L45/00G02F1/1365H01L27/1214H01L29/6609
    • A method of manufacturing a thin film diode incorporated in a liquid crystal display, comprising a lower electrode connected with a signal electrode, an anodic oxidation film formed on the surface of the lower electrode, and an upper electrode formed so as to overlie the lower electrode via the anodic oxidation film and connected with a pixel electrode. The thin film diode is fabricated by forming a lower electrode material film made of a tantalum nitride film on a substrate, forming the lower electrode and the signal electrode by means of etching the lower electrode material film, forming the anodic oxidation film made of a tantalum oxide film on the surface of the lower electrode by means of the anodic oxidation treatment applied thereto, forming an upper electrode material film composed of a transparent and electrically conductive film on the entire surface of the substrate after an annealing applied in a vacuum, and forming the upper electrode and the pixel electrode by means of etching the upper electrode material film using a photoresist as an etching mask, after applying another annealing in a vacuum.
    • 一种制造结合在液晶显示器中的薄膜二极管的方法,包括与信号电极连接的下电极,形成在下电极表面上的阳极氧化膜和形成为覆盖在下电极上的上电极 通过阳极氧化膜并与像素电极连接。 通过在基板上形成由氮化钽膜制成的下电极材料膜,通过蚀刻下电极材料膜形成下电极和信号电极来制造薄膜二极管,形成由钽制成的阳极氧化膜 通过施加阳极氧化处理在下电极的表面上形成氧化膜,在真空中进行退火后,在基板的整个表面上形成由透明导电膜构成的上电极材料膜,以及形成 通过在真空中进行另一退火之后,使用光致抗蚀剂作为蚀刻掩模,通过蚀刻上电极材料膜,上电极和像素电极。
    • 24. 发明授权
    • Method of manufacturing thin film diode
    • 制造薄膜二极管的方法
    • US5866301A
    • 1999-02-02
    • US827715
    • 1997-04-08
    • Masafumi IdeSatoshi NakayamaTakashi Toida
    • Masafumi IdeSatoshi NakayamaTakashi Toida
    • G02F1/1365H01L21/02G02F1/1343
    • H01L28/40G02F1/1365
    • A method of manufacturing a thin film diode incorporated in a liquid crystal display, comprising a lower electrode connected with a signal electrode, an anodic oxidation film formed on the surface of the lower electrode, and an upper electrode formed so as to overlie the lower electrode via the anodic oxidation film and connected with a pixel electrode. The thin film diode is fabricated by forming a lower electrode material film on a substrate, forming the lower electrode and the signal electrode by means of etching the lower electrode material film, forming the anodic oxidation film on the surface of the lower electrode by means of the anodic oxidation treatment applied thereto, forming an upper electrode material film composed of a transparent and electrically conductive film on the entire surface of the substrate after a heat treatment applied in a vacuum, and forming the upper electrode and the pixel electrode by means of etching the upper electrode material film using a photoresist as an etching mask, after applying another heat treatment in a vacuum.
    • 一种制造结合在液晶显示器中的薄膜二极管的方法,包括与信号电极连接的下电极,形成在下电极表面上的阳极氧化膜和形成为覆盖在下电极上的上电极 通过阳极氧化膜并与像素电极连接。 薄膜二极管是通过在基板上形成下部电极材料膜而形成的,通过蚀刻下部电极材料膜形成下部电极和信号电极,在下部电极的表面上形成阳极氧化膜,借助于 对其进行阳极氧化处理,在真空中进行热处理之后,在基板的整个表面上形成由透明导电膜构成的上部电极材料膜,并通过蚀刻形成上部电极和像素电极 使用光致抗蚀剂作为蚀刻掩模的上部电极材料膜在真空中进行另外的热处理之后。
    • 25. 发明授权
    • Laser light source
    • 激光光源
    • US09136669B2
    • 2015-09-15
    • US13588546
    • 2012-08-17
    • Masafumi Ide
    • Masafumi Ide
    • H01S5/00H01S5/022G02F1/35G02F1/377H01S5/22
    • H01S5/02252G02F1/3544G02F1/377H01S5/0092H01S5/02256H01S5/02284H01S5/22
    • An object of the present invention is to provide a laser light source that includes a laser element and an optical element that are optically coupled efficiently and directly. A laser light source includes, a laser element which has a ridge part and emits laser light from a light emission part, an optical element which has a waveguide for guiding the laser light that is incident on an incidence part; and a substrate for joining the laser element and the optical element close so as to be optically coupled directly, and, in this laser light source, the laser element and the optical element are joined to the substrate in a state in which a position of the incidence part is shifted a predetermined distance upward or downward with respect to a position of the light emission part.
    • 本发明的目的是提供一种包括激光元件和光学元件的激光光源,所述激光元件和光学元件被有效且直接地光耦合。 激光光源包括具有脊部并且发射来自发光部的激光的激光元件,具有用于引导入射到入射部的激光的波导的光学元件, 以及用于将激光元件和光学元件接合以直接光学耦合的基板,并且在该激光光源中,激光元件和光学元件在基板的位置接合的状态下接合到基板 入射部分相对于发光部分的位置向上或向下偏移预定距离。
    • 27. 发明申请
    • LIGHT SOURCE DEVICE
    • 光源设备
    • US20120068609A1
    • 2012-03-22
    • US13305428
    • 2011-11-28
    • Masafumi IdeToru Takizawa
    • Masafumi IdeToru Takizawa
    • H05B37/02
    • G02B6/12007G02B6/12004G02B6/4215
    • In a light source device for combining light waves with at least three wavelengths and outputting thus combined light waves, an optical system element and an electrical system element are formed on a semiconductor substrate, thereby eliminating the necessity of optical members such as an optical connector, and saving space to place the optical members as well as reducing arrangement spacing. In addition, the space necessary for wiring in an electrical circuit is reduced. Therefore, an integration degree of each of the elements, the optical system element and the electrical system element, is enhanced. The optical system element and the electrical system element are formed in layers on the same conductor substrate, thereby reducing the area that is required in configuring a parallel establishment of the optical system element and the electrical system element.
    • 在用于组合具有至少三个波长的光波并输出这样组合的光波的光源装置中,在半导体衬底上形成光学系统元件和电气系统元件,由此消除了诸如光学连接器等光学部件的需要, 并节省空间以放置光学构件以及减少布置间隔。 此外,减少了在电路中布线所需的空间。 因此,提高了各元件,光学系统元件和电气系统元件的集成度。 光学系统元件和电气系统元件以相同的导体衬底上的层形成,从而减少了在配置光学系统元件和电气系统元件的并行建立所需的面积。