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21. 发明授权

US09344148B2 Input/output signal processing circuit and input/output signal processing method 有权
标题翻译：输入/输出信号处理电路和输入/输出信号处理方法
公开(公告)号：US09344148B2
公开(公告)日：2016-05-17
申请号：US14755686
申请日：2015-06-30
申请人： Yi-Min Shiu , Chao-Chi Chen , Pei-Sheng Tsu
发明人： Yi-Min Shiu , Chao-Chi Chen , Pei-Sheng Tsu
IPC分类号： H03K9/06 , H04B3/54 , G11C5/14 , G11C11/4096 , G11C11/4074
CPC分类号： H04B3/54 , G06F1/26 , G06F13/4282 , G09G2300/0408 , G09G2310/0289 , G11C5/14 , G11C11/4074 , G11C11/4096
摘要： The present invention discloses an input/output (I/O) signal processing circuit and processing method. The I/O signal processing circuit includes a level adjustable I/O circuit and an adjustment circuit. The I/O signal processing circuit includes an output driver and/or an input comparator. The output driver transmits an output signal via a signal transmission line according to an output data. The output driver has an adjustable high operation voltage level and an adjustable low operation voltage level, which determine a high level and a low level of the output signal, respectively. The input comparator receives an input signal via the signal transmission line and comparing the input signal with an adjustable reference voltage, so as to generate an input data. The adjustment circuit generates an adjustment signal according to voltage drop related information, to correspondingly adjust the adjustable high and low operation voltage level and/or the adjustable reference voltage.
摘要翻译：本发明公开了一种输入/输出（I / O）信号处理电路及其处理方法。 I / O信号处理电路包括电平可调I / O电路和调整电路。 I / O信号处理电路包括输出驱动器和/或输入比较器。输出驱动器根据输出数据通过信号传输线传输输出信号。输出驱动器具有可调节的高工作电压电平和可调节的低工作电压电平，分别决定输出信号的高电平和低电平。输入比较器经由信号传输线接收输入信号，并将输入信号与可调参考电压进行比较，以产生输入数据。调整电路根据电压降相关信息生成调整信号，相应地调整可调高低电平操作电压和/或可调参考电压。

22. 发明申请

US20130065328A1 FOCUS CONTROL METHOD FOR PHOTOLITHOGRAPHY 有权
标题翻译：聚焦控制方法
公开(公告)号：US20130065328A1
公开(公告)日：2013-03-14
申请号：US13227805
申请日：2011-09-08
申请人： Jen-Pan WANG , Chien-Hsuan Liu , Ching-Hsien Chen , Chao-Chi Chen
发明人： Jen-Pan WANG , Chien-Hsuan Liu , Ching-Hsien Chen , Chao-Chi Chen
IPC分类号： H01L21/66 , G03B27/52
CPC分类号： G03F7/70641 , G03F7/70341 , G03F9/7026 , G03F9/7034 , G03F9/7053
摘要： A method comprises providing a semiconductor substrate having at least one layer of a material over the substrate. A sound is applied to the substrate, such that a sound wave is reflected by a top surface of the layer of material The sound wave is detected using a sensor. A topography of the top surface is determined based on the detected sound wave. The determined topography is used to control an immersion lithography process.
摘要翻译：一种方法包括提供在衬底上具有至少一层材料的半导体衬底。对基板施加声音，使得声波被材料层的顶表面反射。使用传感器检测声波。基于检测到的声波来确定顶面的形貌。确定的地形用于控制浸没光刻工艺。

23. 发明授权

US07711002B2 Transcoding SMS-based streamed messages to SIP-based IP signals in wireless and wireline networks 失效
标题翻译：将基于SMS的流式消息转换为无线和有线网络中的基于SIP的IP信号
公开(公告)号：US07711002B2
公开(公告)日：2010-05-04
申请号：US10183031
申请日：2002-06-25
申请人： Atanu Mukherjee , Chao-Chi Chen , Francois Frederic Ozog
发明人： Atanu Mukherjee , Chao-Chi Chen , Francois Frederic Ozog
IPC分类号： H04L12/26
CPC分类号： H04W4/18 , H04L29/06 , H04L29/06027 , H04L29/12009 , H04L29/12207 , H04L51/04 , H04L51/38 , H04L61/20 , H04L65/1006 , H04L65/103 , H04L65/104 , H04L65/1043 , H04L67/04 , H04L67/18 , H04L67/24 , H04L67/26 , H04L67/28 , H04L67/2823 , H04L67/2828 , H04L67/2842 , H04L67/303 , H04L69/08 , H04L69/24 , H04W4/12 , H04W4/14 , H04W8/10 , H04W80/00 , H04W80/10 , H04W88/16 , H04W88/181 , H04W88/184 , H04W92/02
摘要： A communication gateway for communicating presence information between a connectionless packet-switched signaling network and an Internet Protocol (IP) network includes a message bearer configured to receive and send messages over a connectionless packet-switched signaling network and a translator, in communication with the message bearer, operable to translate messages received from the connectionless packet-switched signaling network into messages suitable for transport over an IP network and operable to translate messages received from the IP network into messages suitable for transport over the connectionless packet-switched signaling network.
摘要翻译：用于在无连接分组交换信令网络和因特网协议（IP）网络之间传送存在信息的通信网关包括被配置为通过无连接分组交换信令网络和翻译器与消息通信来接收和发送消息的消息承载承载，可操作以将从无连接分组交换信令网络接收的消息转换成适合于通过IP网络传输的消息，并且可操作以将从IP网络接收的消息转换为适合于通过无连接分组交换信令网络传输的消息。

24. 发明授权

US07425486B2 Method for forming a trench capacitor 有权
标题翻译：形成沟槽电容器的方法
公开(公告)号：US07425486B2
公开(公告)日：2008-09-16
申请号：US11285449
申请日：2005-11-21
申请人： Chao-Chi Chen , Chuan-Ping Hou
发明人： Chao-Chi Chen , Chuan-Ping Hou
IPC分类号： H01L21/8242 , H01L21/20 , H01L21/30
CPC分类号： H01L27/1087 , H01L27/10829 , H01L29/945
摘要： A method for forming a trench capacitor is presented in the following process steps. A trench is formed on a semiconductor substrate. A first trench dielectric is deposited into the trench without reaching a full height thereof. An etch stop layer is formed on the first trench dielectric and along inner surfaces of the trench. A second trench dielectric is deposited on the etch stop layer. The second trench dielectric and the etch stop layer are removed to expose the first trench dielectric in the trench. A conductive layer is formed on the first trench dielectric in the trench, such that the conductive layer, the first trench dielectric and the semiconductor substrate function as a trench capacitor.
摘要翻译：用于形成沟槽电容器的方法在以下工艺步骤中呈现。在半导体衬底上形成沟槽。第一沟槽电介质沉积到沟槽中而不达到其整个高度。蚀刻停止层形成在第一沟槽电介质上并且沿着沟槽的内表面。第二沟槽电介质沉积在蚀刻停止层上。去除第二沟槽电介质和蚀刻停止层以暴露沟槽中的第一沟槽电介质。导电层形成在沟槽中的第一沟槽电介质上，使得导电层，第一沟槽电介质和半导体衬底用作沟槽电容器。

25. 发明申请

US20050218463A1 Halogen gettering method for forming field effect transistor (FET) device 失效
标题翻译：用于形成场效应晶体管（FET）器件的卤素吸除方法
公开(公告)号：US20050218463A1
公开(公告)日：2005-10-06
申请号：US10813786
申请日：2004-03-30
申请人： Ching-Chen Hao , Chao-Chi Chen , Chih-Heng Shen , Chi-Hsun Hsieh
发明人： Ching-Chen Hao , Chao-Chi Chen , Chih-Heng Shen , Chi-Hsun Hsieh
IPC分类号： H01L21/00 , H01L21/28 , H01L21/8234 , H01L29/51
CPC分类号： H01L21/28202 , H01L21/28211 , H01L21/823462 , H01L29/513
摘要： A thermal oxidation method for forming a gate dielectric layer for use within a field effect transistor device employs a thermal oxidizing atmosphere comprising a halogen getter material. By employing the halogen getter material, the field effect transistor device is formed with enhanced performance, in particular with respect to negative bias temperature instability lifetime.
摘要翻译：用于形成在场效应晶体管器件内使用的栅极电介质层的热氧化方法采用包含卤素吸气材料的热氧化气氛。通过采用卤素吸气剂材料，场效晶体管器件形成具有增强的性能，特别是相对于负偏压温度不稳定寿命。

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