专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20050028736A1 Gas temperature control for a plasma process 失效
标题翻译：等离子体工艺的气体温度控制
公开(公告)号：US20050028736A1
公开(公告)日：2005-02-10
申请号：US10940019
申请日：2004-09-14
申请人： Maolin Long
发明人： Maolin Long
IPC分类号： C23C16/452 , H01J37/32 , C23C16/00
CPC分类号： H01J37/3244 , C23C16/452
摘要： A method and system for controlling the temperatures of at least one gas in a plasma processing environment prior to the at least one gas entering a process chamber. This temperature control may vary at different spatial regions of a showerhead assembly (either an individual gas species or mixed gas species). According to one embodiment, an in-line heat exchanger alters (i.e., increases or decreases) the temperature of passing gas species (either high- or low-density) prior to entering a process chamber, temperature change of the gases is measured by determining a temperature of the gas both upon entrance into the in-line heat exchanger assembly and upon exit.
摘要翻译：一种用于在所述至少一种气体进入处理室之前控制等离子体处理环境中的至少一种气体的温度的方法和系统。该温度控制可以在喷头组件（单独的气体种类或混合气体种类）的不同空间区域中变化。根据一个实施例，直列式热交换器在进入处理室之前改变（即，增加或减少）通过的气体种类（高或低密度）的温度，气体的温度变化通过确定气体在进入直列热交换器组件时和出口时的温度。

22. 发明授权

US06811651B2 Gas temperature control for a plasma process 失效
标题翻译：等离子体工艺的气体温度控制
公开(公告)号：US06811651B2
公开(公告)日：2004-11-02
申请号：US10173671
申请日：2002-06-19
申请人： Maolin Long
发明人： Maolin Long
IPC分类号： C23C1600
CPC分类号： H01J37/3244 , C23C16/452
摘要： A method and system for controlling the temperatures of at least one gas in a plasma processing environment prior to the at least one gas entering a process chamber. This temperature control may vary at different spatial regions of a showerhead assembly (either an individual gas species or mixed gas species). According to one embodiment, an in-line heat exchanger alters (i.e., increases or decreases) the temperature of passing gas species (either high- or low-density) prior to entering a process chamber, temperature change of the gases is measured by determining a temperature of the gas both upon entrance into the in-line heat exchanger assembly and upon exit.
摘要翻译：一种用于在所述至少一种气体进入处理室之前控制等离子体处理环境中的至少一种气体的温度的方法和系统。该温度控制可以在喷头组件（单独的气体种类或混合气体种类）的不同空间区域中变化。根据一个实施例，直列式热交换器在进入处理室之前改变（即，增加或减少）通过的气体种类（高或低密度）的温度，气体的温度变化通过确定气体在进入直列热交换器组件时和出口时的温度。

23. 发明授权

US09336996B2 Plasma processing systems including side coils and methods related to the plasma processing systems 有权
标题翻译：等离子体处理系统包括侧线圈和与等离子体处理系统有关的方法
公开(公告)号：US09336996B2
公开(公告)日：2016-05-10
申请号：US13034332
申请日：2011-02-24
申请人： Maolin Long , Alex Paterson
发明人： Maolin Long , Alex Paterson
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32 , H05H1/46
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32119 , H01J37/32165 , H01J37/32431 , H01J37/3244 , H01J37/32458 , H01J37/32513 , H01J37/32651 , H01J37/32715 , H01J2237/332 , H01J2237/334 , H05H1/46 , H05H2001/4652 , H05H2001/4667
摘要： A plasma processing system for generating plasma to process a wafer. The plasma processing system includes a set of top coils for initiating the plasma, a set of side coils for affecting distribution of the plasma, and a chamber structure for containing the plasma. The chamber structure includes a chamber wall and a dielectric member. The dielectric member includes a top, a vertical wall, and a flange. The top is connected through the vertical wall to the flange, and is connected through the vertical wall and the flange to the chamber wall. The set of top coils is disposed above the top. The set of side coils surrounds the vertical wall. A vertical inner surface of the vertical wall is configured to be exposed to the plasma. The inner diameter of the vertical wall is smaller than the inner diameter of the chamber wall.
摘要翻译：一种用于产生等离子体以处理晶片的等离子体处理系统。等离子体处理系统包括一组用于启动等离子体的顶部线圈，用于影响等离子体分布的一组侧线圈，以及用于容纳等离子体的室结构。室结构包括室壁和电介质构件。电介质构件包括顶部，垂直壁和凸缘。顶部通过垂直壁连接到法兰上，并通过垂直壁和法兰连接到室壁。顶部线圈组设置在顶部上方。侧面线圈组围绕垂直壁。垂直壁的垂直内表面被配置为暴露于等离子体。垂直壁的内径小于室壁的内径。

24. 发明申请

US20120273130A1 Internal Faraday Shield Having Distributed Chevron Patterns and Correlated Positioning Relative to External Inner and Outer TCP Coil 有权
标题翻译：内部法拉第屏蔽具有相对于外部内部和外部TCP线圈分布的雪佛龙模式和相关定位
公开(公告)号：US20120273130A1
公开(公告)日：2012-11-01
申请号：US13198683
申请日：2011-08-04
申请人： John Drewery , Maolin Long , Alex Paterson
发明人： John Drewery , Maolin Long , Alex Paterson
IPC分类号： H01L21/3065 , H05K9/00
CPC分类号： H01J37/32651 , H01J37/321 , H01J37/32633
摘要： Plasma processing chambers having internal Faraday shields with defined groove configurations, are defined. In one example, the chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber, where the dielectric window disposed over the electrostatic chuck. Also included is a Faraday shield disposed inside of the chamber and defined between the electrostatic chuck and the dielectric window. The Faraday shield includes an inner zone having an inner radius range, a middle zone having a middle radius range, an outer zone having an outer radius range, where the inner zone is adjacent to the middle zone, and the middle zone being adjacent to the outer zone. Further defining the Faraday shield is a first set of radial slots (A) extending through the inner zone, the middle zone, and the outer zone, a second set of radial slots (C) extending through only the outer zone; and a third set of radial slots (B) extending through the middle zone and outer zone. In this configuration, the first, second and third radial slots are arranged radially around the Faraday shield in a repeating pattern of slots A, C, B, and C.
摘要翻译：定义了具有限定凹槽结构的具有内部法拉第屏蔽的等离子体处理室。在一个示例中，腔室包括用于接收衬底的静电吸盘和连接到室的顶部的介电窗口，其中介电窗设置在静电吸盘上方。还包括设置在室内部并限定在静电卡盘和电介质窗口之间的法拉第屏蔽。法拉第屏蔽包括具有内半径范围的内区域，具有中间半径范围的中间区域，具有外半径范围的外区域，其中内区域与中间区域相邻，中间区域邻近外部区域进一步限定法拉第屏蔽是延伸穿过内部区域，中间区域和外部区域的第一组径向狭槽（A），仅延伸穿过外部区域的第二组径向狭槽（C）; 以及延伸穿过中间区域和外部区域的第三组径向狭槽（B）。在这种构造中，第一，第二和第三径向狭缝围绕法拉第屏蔽件以狭槽A，C，B和C的重复图案径向布置。

25. 发明申请

US20120217222A1 PLASMA PROCESSING SYSTEMS INCLUDING SIDE COILS AND METHODS RELATED TO THE PLASMA PROCESSING SYSTEMS 有权
标题翻译：包括侧线的等离子体处理系统和与等离子体处理系统相关的方法
公开(公告)号：US20120217222A1
公开(公告)日：2012-08-30
申请号：US13034332
申请日：2011-02-24
申请人： Maolin Long , Alex Paterson
发明人： Maolin Long , Alex Paterson
IPC分类号： C23F1/08 , C23F1/00 , C23C16/52 , C23C16/458 , C23C16/50
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32119 , H01J37/32165 , H01J37/32431 , H01J37/3244 , H01J37/32458 , H01J37/32513 , H01J37/32651 , H01J37/32715 , H01J2237/332 , H01J2237/334 , H05H1/46 , H05H2001/4652 , H05H2001/4667
摘要： A plasma processing system for generating plasma to process a wafer. The plasma processing system includes a set of top coils for initiating the plasma, a set of side coils for affecting distribution of the plasma, and a chamber structure for containing the plasma. The chamber structure includes a chamber wall and a dielectric member. The dielectric member includes a top, a vertical wall, and a flange. The top is connected through the vertical wall to the flange, and is connected through the vertical wall and the flange to the chamber wall. The set of top coils is disposed above the top. The set of side coils surrounds the vertical wall. A vertical inner surface of the vertical wall is configured to be exposed to the plasma. The inner diameter of the vertical wall is smaller than the inner diameter of the chamber wall.
摘要翻译：一种用于产生等离子体以处理晶片的等离子体处理系统。等离子体处理系统包括一组用于启动等离子体的顶部线圈，用于影响等离子体分布的一组侧线圈，以及用于容纳等离子体的室结构。室结构包括室壁和电介质构件。电介质构件包括顶部，垂直壁和凸缘。顶部通过垂直壁连接到法兰上，并通过垂直壁和法兰连接到室壁。顶部线圈组设置在顶部上方。侧面线圈组围绕垂直壁。垂直壁的垂直内表面被配置为暴露于等离子体。垂直壁的内径小于室壁的内径。

26. 发明申请

US20060075967A1 Magnetic-field concentration in inductively coupled plasma reactors 审中-公开
标题翻译：电感耦合等离子体反应堆中的磁场浓度
公开(公告)号：US20060075967A1
公开(公告)日：2006-04-13
申请号：US10963030
申请日：2004-10-12
申请人： Siqing Lu , Canfeng Lai , Qiwei Liang , Maolin Long , Irene Chou , Jason Bloking , Steven Kim , Ellie Yieh
发明人： Siqing Lu , Canfeng Lai , Qiwei Liang , Maolin Long , Irene Chou , Jason Bloking , Steven Kim , Ellie Yieh
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： H01J37/321 , C23C16/045 , C23C16/401 , C23C16/507 , H05B6/26
摘要： A substrate processing system is provided with a housing defining a process chamber. A substrate holder is disposed within the process chamber and configured to support a substrate during substrate processing. A gas delivery system is configured to introduce a gas into the process chamber. A pressure-control system is provided for maintaining a selected pressure within the process chamber. A high-density-plasma generating system is operatively coupled with the process chamber and includes a coil for inductively coupling energy into a plasma formed within the process chamber. It also includes magneto-dielectric material proximate the coil for concentrating a magnetic field generated by the coil. A controller is also provided for controlling the gas-delivery system, the pressure-control system, and the high-density-plasma generating system.
摘要翻译：衬底处理系统设置有限定处理室的壳体。衬底保持器设置在处理室内并且构造成在衬底处理期间支撑衬底。气体输送系统构造成将气体引入处理室。提供压力控制系统以保持处理室内的选定压力。高密度等离子体发生系统与处理室可操作地耦合，并且包括用于将能量感应耦合到处理室内形成的等离子体中的线圈。它还包括靠近线圈的磁电介质材料，用于集中由线圈产生的磁场。还提供用于控制气体输送系统，压力控制系统和高密度等离子体产生系统的控制器。

27. 发明授权

US06916401B2 Adjustable segmented electrode apparatus and method 失效
标题翻译：可调分段电极装置及方法
公开(公告)号：US06916401B2
公开(公告)日：2005-07-12
申请号：US10339597
申请日：2003-01-10
申请人： Maolin Long
发明人： Maolin Long
IPC分类号： H01J37/32 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32009 , H01J37/32532 , H01J37/32568 , H01J37/32623
摘要： A segmented electrode apparatus for use in plasma processing in a plasma chamber or as part of a plasma processing system. The apparatus is composed of a plurality of electrode segments each having an upper surface, a lower surface and a periphery. The lower surfaces of the electrode segments define an electrode segment plane. Further included in the electrode is a plurality of displaceable insulating ring assemblies with a conductive shielding layer in each of them. Each assembly has an insulating body with an upper and lower portion and surrounds a corresponding one of the electrode segments at the electrode segment periphery. Each insulating ring assembly is arranged adjacent another insulating ring assembly and is displaceable with respect thereto and to the corresponding electrode segment. Also included in the electrode apparatus is a plurality of displacement actuators connected to the chamber and to the plurality of insulating ring assemblies at the insulating body upper portions. The displacement actuators are used to displace at least one of the insulating ring assemblies relative to the corresponding one of the electrode segments so as to cause the lower portion of at least one insulating body to move in a direction perpendicular to the electrode segment plane.
摘要翻译：用于等离子体室中的等离子体处理或等离子体处理系统的一部分的分段电极装置。该装置由多个电极段组成，每个电极段具有上表面，下表面和周边。电极段的下表面限定电极段平面。还包括在电极中的是多个位移绝缘环组件，其中每个具有导电屏蔽层。每个组件具有绝缘体，其具有上部和下部，并且在电极段周边处围绕相应的一个电极段。每个绝缘环组件被布置在另一个绝缘环组件附近并且可相对于其移动并且相应于电极段。还包括在电极装置中的是多个位移致动器，其连接到室和在绝缘体上部处的多个绝缘环组件。位移致动器用于相对于相应的一个电极段移动绝缘环组件中的至少一个，以使至少一个绝缘体的下部在垂直于电极段平面的方向上移动。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式