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21. 发明申请

US20110254147A1 SEMICONDUCTOR EQUIPMENT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体设备及其制造方法
公开(公告)号：US20110254147A1
公开(公告)日：2011-10-20
申请号：US13173647
申请日：2011-06-30
申请人： Nobuyuki OTSUKA , Manabu Yanagihara , Shuichi Nagai , Daisuke Ueda
发明人： Nobuyuki OTSUKA , Manabu Yanagihara , Shuichi Nagai , Daisuke Ueda
IPC分类号： H01L23/44 , H01L21/54
CPC分类号： H01L23/427 , H01L21/50 , H01L21/54 , H01L23/045 , H01L23/10 , H01L2224/45124 , H01L2224/48 , H01L2224/73265 , H01L2924/01322 , H01L2924/10253 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： To provide a semiconductor equipment having high heat-transfer effect and breakdown voltage, and a method of manufacturing the same. The semiconductor equipment includes: a sealed container; a stem connected to the sealed container via a stem peripheral portion; and a semiconductor chip mounted on a top surface of the stem, inside the sealed container. The semiconductor chip is electrically connected to a lead provided to the stem, the stem peripheral portion, which is of a material that is different from the material of stem and the same as the material of the sealed container, is bonded along a periphery of the stem, and the sealed container is filled with a working fluid including at least one of ethanol, a perfluorocarbon, and a fluoroether.
摘要翻译：提供具有高传热效应和击穿电压的半导体设备及其制造方法。半导体设备包括：密封容器; 通过杆周边部连接到密封容器的杆; 以及安装在所述杆的顶表面上的所述密封容器内的半导体芯片。半导体芯片电连接到设置在杆上的引线，与外壳材料不同的材料的茎周边部分沿密封容器的材料粘结，并且密封容器中填充有包括乙醇，全氟化碳和氟醚中的至少一种的工作流体。

22. 发明申请

US20050205892A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050205892A1
公开(公告)日：2005-09-22
申请号：US11081622
申请日：2005-03-17
申请人： Manabu Yanagihara , Daisuke Ueda
发明人： Manabu Yanagihara , Daisuke Ueda
IPC分类号： H01L21/338 , H01L29/732 , H01L29/812
CPC分类号： H01L29/66871 , H01L29/812
摘要： The semiconductor device of the present invention includes a device formation region formed on a substrate and including at least one semiconductor region, and a first electrode and a second electrode formed spaced apart from each other on the device formation region. A semi-insulating film is formed to cover the surface of a portion of the semiconductor region, which portion is located between the first and second electrodes and in which portion a depletion layer extends when a reverse bias is applied between the first and second electrodes.
摘要翻译：本发明的半导体器件包括形成在衬底上并且包括至少一个半导体区域的器件形成区域，以及在器件形成区域上彼此间隔开形成的第一电极和第二电极。形成半绝缘膜以覆盖半导体区域的一部分的表面，该部分位于第一和第二电极之间，并且当在第一和第二电极之间施加反向偏压时耗尽层延伸。

23. 发明申请

US20080303162A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20080303162A1
公开(公告)日：2008-12-11
申请号：US12100245
申请日：2008-04-09
申请人： Hidetoshi Ishida , Manabu Yanagihara , Yasuhiro Uemoto , Daisuke Ueda
发明人： Hidetoshi Ishida , Manabu Yanagihara , Yasuhiro Uemoto , Daisuke Ueda
IPC分类号： H01L23/48
CPC分类号： H01L29/7787 , H01L29/0692 , H01L29/2003 , H01L29/402 , H01L29/405 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a layered structure including a first nitride semiconductor layer and a second nitride semiconductor layer that are sequentially formed over a substrate in this order. The second nitride semiconductor layer has a wider bandgap than the first nitride semiconductor layer. A first electrode and a second electrode are formed spaced apart from each other on the layered structure. A first insulating layer with a high breakdown field is formed in a region with electric field concentration between the first electrode and the second electrode over the layered structure. The first insulating layer has a higher breakdown field than air.
摘要翻译：半导体器件包括依次形成在衬底上的第一氮化物半导体层和第二氮化物半导体层的层状结构。第二氮化物半导体层具有比第一氮化物半导体层更宽的带隙。第一电极和第二电极在分层结构上彼此间隔开形成。在分层结构上，在第一电极和第二电极之间的电场浓度的区域中形成具有高击穿电场的第一绝缘层。第一绝缘层具有比空气更高的击穿场。

24. 发明授权

US07436237B2 Distortion reducing semiconductor switch 失效
标题翻译：失真减少半导体开关
公开(公告)号：US07436237B2
公开(公告)日：2008-10-14
申请号：US11138474
申请日：2005-05-27
申请人： Masahiro Hikita , Manabu Yanagihara , Daisuke Ueda
发明人： Masahiro Hikita , Manabu Yanagihara , Daisuke Ueda
IPC分类号： H03K17/16
CPC分类号： H03K17/6871 , H03K17/063
摘要： A semiconductor switch includes a first semiconductor circuit having a nonlinear characteristic, and a second semiconductor circuit having a nonlinear characteristic. Each of the first semiconductor circuit and the second semiconductor circuit is configured to at least one of allow and interrupt transmission of a signal. The first semiconductor circuit reduces the nonlinear characteristic of the second semiconductor circuit and the second semiconductor circuit reduces the nonlinear characteristic of the first semiconductor circuit.
摘要翻译：半导体开关包括具有非线性特性的第一半导体电路和具有非线性特性的第二半导体电路。第一半导体电路和第二半导体电路中的每一个被配置为允许和中断信号的传输中的至少一个。第一半导体电路降低了第二半导体电路的非线性特性，并且第二半导体电路降低了第一半导体电路的非线性特性。

25. 发明申请

US20050264341A1 Semiconductor switch 失效
标题翻译：半导体开关
公开(公告)号：US20050264341A1
公开(公告)日：2005-12-01
申请号：US11138474
申请日：2005-05-27
申请人： Masahiro Hikita , Manabu Yanagihara , Daisuke Ueda
发明人： Masahiro Hikita , Manabu Yanagihara , Daisuke Ueda
IPC分类号： H01P1/15 , H03K17/06 , H03K17/687 , H04B1/44
CPC分类号： H03K17/6871 , H03K17/063
摘要： The present invention, which aims at providing a semiconductor switch capable of reducing harmonic distortion, is made up of: an input terminal 101; an output terminal 102; a through FET 106 that is connected serially to the signal path between the input terminal 101 and the output terminal 102; a shunt FET 107 that is connected in between the output terminal 102 and the ground; and a distortion reducing circuit 120 that is connected in parallel with the through FET 106. In this semiconductor switch, the distortion reducing circuit 120 includes: a first diode 109 and a second diode 110 that are placed in parallel with each other; a first constant voltage source 111 and a second constant voltage source 112 that are placed in parallel with each other; and a FET 108.
摘要翻译：旨在提供能够减少谐波失真的半导体开关的本发明由输入端子101构成，输出端子102; 与输入端子101和输出端子102之间的信号路径串联连接的贯通FET106; 连接在输出端子102和地之间的并联FET107; 以及与通过FET 106并联连接的失真减小电路120。在该半导体开关中，失真减少电路120包括：彼此平行放置的第一二极管109和第二二极管110; 彼此平行放置的第一恒定电压源111和第二恒定电压源112; 和FET 108。

26. 发明授权

US07898002B2 Nitride semiconductor device and method for fabricating the same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US07898002B2
公开(公告)日：2011-03-01
申请号：US11890480
申请日：2007-08-07
申请人： Masahiro Hikita , Tetsuzo Ueda , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
发明人： Masahiro Hikita , Tetsuzo Ueda , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
IPC分类号： H01L21/337 , H01L21/335
CPC分类号： H01L29/7786 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/432 , H01L29/66462
摘要： A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer formed over the substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a larger band gap energy than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer and including a p-type nitride semiconductor with at least a single-layer structure; a gate electrode formed on the third nitride semiconductor layer; and a source electrode and a drain electrode formed in regions located on both sides of the gate electrode, respectively. The third nitride semiconductor layer has a thickness greater in a portion below the gate electrode than in a portion below the side of the gate electrode.
摘要翻译：氮化物半导体器件包括：衬底; 形成在所述基板上的第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更大的带隙能量的第二氮化物半导体层; 形成在所述第二氮化物半导体层上并且包括具有至少单层结构的p型氮化物半导体的第三氮化物半导体层; 形成在所述第三氮化物半导体层上的栅极; 以及分别形成在位于栅电极两侧的区域中的源电极和漏电极。所述第三氮化物半导体层的厚度比所述栅极电极侧的部分的厚度大。

27. 发明申请

US20100327293A1 FIELD-EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20100327293A1
公开(公告)日：2010-12-30
申请号：US12880704
申请日：2010-09-13
申请人： Masahiro Hikita , Tetsuzo Ueda , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
发明人： Masahiro Hikita , Tetsuzo Ueda , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
IPC分类号： H01L29/20
CPC分类号： H01L29/7786 , H01L29/0843 , H01L29/1066 , H01L29/2003 , H01L29/432 , H01L29/66462 , H01L29/7783
摘要： An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. A source electrode and a drain electrode are provided on the undoped AlGaN layer. A pn junction is formed in a gate region by a two dimensional electron gas generated at an interface between the undoped AlGaN layer and the undoped GaN layer and the p-type GaN layer, so that a gate voltage can be increased.
摘要翻译：依次形成AlN缓冲层，未掺杂的GaN层，未掺杂的AlGaN层，p型GaN层和重掺杂的p型GaN层。栅电极与重掺杂的p型GaN层形成欧姆接触。源电极和漏电极设置在未掺杂的AlGaN层上。通过在未掺杂的AlGaN层和未掺杂的GaN层和p型GaN层之间的界面处产生的二维电子气在栅极区域中形成pn结，从而可以提高栅极电压。

28. 发明授权

US07605441B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07605441B2
公开(公告)日：2009-10-20
申请号：US11730422
申请日：2007-04-02
申请人： Kazushi Nakazawa , Hiroaki Ueno , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
发明人： Kazushi Nakazawa , Hiroaki Ueno , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
IPC分类号： H01L27/095 , H01L21/28 , H01L29/47
CPC分类号： H01L29/872 , H01L29/2003 , H01L29/66212
摘要： A semiconductor device includes: a semiconductor layer made of a group-III nitride semiconductor and having a first surface and a second surface opposed to the first surface; a Schottky electrode formed on the first surface of the semiconductor layer; and an ohmic electrode electrically connected to the second surface of the semiconductor layer. The semiconductor layer has, in at least the upper portion thereof, highly-resistive regions selectively formed to have a high resistance.
摘要翻译：半导体器件包括：由III族氮化物半导体制成并具有与第一表面相对的第一表面和第二表面的半导体层; 形成在半导体层的第一表面上的肖特基电极; 以及与半导体层的第二表面电连接的欧姆电极。半导体层至少在其上部具有选择性地形成为具有高电阻的高电阻区域。

29. 发明申请

US20070126115A1 Package substrate 审中-公开
标题翻译：封装衬底
公开(公告)号：US20070126115A1
公开(公告)日：2007-06-07
申请号：US11593617
申请日：2006-11-07
申请人： Manabu Yanagihara , Hiroaki Ueno , Yasuhiro Uemoto , Tsuyoshi Tanaka
发明人： Manabu Yanagihara , Hiroaki Ueno , Yasuhiro Uemoto , Tsuyoshi Tanaka
IPC分类号： H01L23/34
CPC分类号： H05K3/28 , H01L21/563 , H01L23/3732 , H01L24/45 , H01L24/48 , H01L2224/13144 , H01L2224/16 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/83951 , H01L2224/8592 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01079 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H05K1/0209 , H05K2201/0179 , H05K2201/0323 , H05K2201/09045 , H01L2924/00 , H01L2224/85399 , H01L2224/05599
摘要： A package substrate has a substrate body on which an electronic component is mounted. The substrate body is formed at its top or back surface with a diamond film, a diamond-like carbon film or a carbon film.
摘要翻译：封装基板具有安装电子部件的基板主体。基板主体在其顶部或背面形成有金刚石膜，类金刚石碳膜或碳膜。

30. 发明授权

US07821030B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07821030B2
公开(公告)日：2010-10-26
申请号：US11363947
申请日：2006-03-01
申请人： Manabu Yanagihara , Kazushi Nakazawa , Tsuyoshi Tanaka
发明人： Manabu Yanagihara , Kazushi Nakazawa , Tsuyoshi Tanaka
IPC分类号： H01L29/205 , H01L29/78
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/7787 , H01L29/872
摘要： A semiconductor device includes a first semiconductor layer which is formed above a substrate, a Schottky electrode and an ohmic electrode which are formed on the first semiconductor layer to be spaced from each other and a second semiconductor layer which is formed to cover the first semiconductor layer with the Schottky electrode and the ohmic electrode exposed. The second semiconductor layer has a larger band gap than that of the first semiconductor layer.
摘要翻译：半导体器件包括形成在衬底上的第一半导体层，形成在第一半导体层上彼此间隔开的肖特基电极和欧姆电极以及形成为覆盖第一半导体层的第二半导体层肖特基电极和欧姆电极暴露。第二半导体层具有比第一半导体层更大的带隙。

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