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21. 发明授权

US07205559B2 Electron beam apparatus and device manufacturing method using same 失效
标题翻译：电子束装置及其制造方法
公开(公告)号：US07205559B2
公开(公告)日：2007-04-17
申请号：US10697647
申请日：2003-10-31
申请人： Muneki Hamashima , Takao Kato , Mamoru Nakasuji , Nobuharu Noji , Tohru Satake
发明人： Muneki Hamashima , Takao Kato , Mamoru Nakasuji , Nobuharu Noji , Tohru Satake
IPC分类号： A61N5/00 , G01K1/08 , H01J29/70
CPC分类号： F01N3/2828 , F01N2260/18 , F01N2330/06 , H01J37/06 , H01J37/28
摘要： An electron beam apparatus including an electron gun for directing a plurality of primary electron beams onto a sample, an objective lens for forming an electric field to accelerate a plurality of secondary electron beams emitted from the sample, and a separator for separating the plurality of secondary electron beams from a primary optical system and for directing the plurality of secondary electron beams into a secondary optical system for guiding to a detector outputting a detection signal of the secondary electron beams. A deflector deflects the secondary electron beams in the secondary optical system. The deflector is controlled to deflect the plurality of secondary electron beams synchronously with scanning of the plurality of primary electron beams, thereby preventing the plurality of secondary electron beams from moving on the detector in response to the scanning of the plurality of primary electron beams.
摘要翻译：一种电子束装置，包括用于将多个一次电子束引导到样品上的电子枪，用于形成电场以加速从样品发射的多个二次电子束的物镜，以及用于分离多个次级来自主光学系统的电子束和用于将多个二次电子束引导到二次光学系统中，用于引导到检测器输出二次电子束的检测信号。偏转器偏转二次光学系统中的二次电子束。控制偏转器以与多个一次电子束的扫描同步地偏转多个二次电子束，从而防止多个二次电子束响应于多个一次电子束的扫描在检测器上移动。

22. 发明授权

US07129485B2 Electron beam apparatus and method of manufacturing semiconductor device using the apparatus 失效
公开(公告)号：US07129485B2
公开(公告)日：2006-10-31
申请号：US10766041
申请日：2004-01-29
申请人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Masahiro Hatakeyama , Kenji Watanabe , Takao Kato , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima
发明人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Masahiro Hatakeyama , Kenji Watanabe , Takao Kato , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima
IPC分类号： G01N23/00
CPC分类号： B82Y10/00 , B82Y40/00 , G01N23/225 , H01J37/06 , H01J37/063 , H01J37/073 , H01J37/185 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/28 , H01J37/3174 , H01J2237/0435 , H01J2237/0635 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/2446 , H01J2237/24485 , H01J2237/24564 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817
摘要： The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.

23. 发明授权

US07095022B2 Electron beam apparatus and method of manufacturing semiconductor device using the apparatus 有权
公开(公告)号：US07095022B2
公开(公告)日：2006-08-22
申请号：US09985322
申请日：2001-11-02
申请人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Masahiro Hatakeyama , Kenji Watanabe , Takao Kato , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima
发明人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Masahiro Hatakeyama , Kenji Watanabe , Takao Kato , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima
IPC分类号： H01J37/26
CPC分类号： B82Y10/00 , B82Y40/00 , G01N23/225 , H01J37/06 , H01J37/063 , H01J37/073 , H01J37/185 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/28 , H01J37/3174 , H01J2237/0435 , H01J2237/0635 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/2446 , H01J2237/24485 , H01J2237/24564 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817
摘要： The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.

24. 发明申请

US20060054819A1 Electron beam apparatus and device manufacturing method using same 失效
公开(公告)号：US20060054819A1
公开(公告)日：2006-03-16
申请号：US11262844
申请日：2005-11-01
申请人： Mamoru Nakasuji , Takao Kato , Kenji Watanabe , Shoji Yoshikawa , Tohru Satake , Nobuharu Noji
发明人： Mamoru Nakasuji , Takao Kato , Kenji Watanabe , Shoji Yoshikawa , Tohru Satake , Nobuharu Noji
IPC分类号： G21K7/00
CPC分类号： B82Y10/00 , G01N23/225 , G01R31/307 , H01J37/242 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24507 , H01J2237/2817
摘要： An electron beam apparatus is provided for reliably measuring a potential contrast and the like at a high throughput in a simple structure. The electron beam apparatus for irradiating a sample, such as a wafer, formed with a pattern with an electron beam to evaluate the sample comprises an electron-optical column for accommodating an electron beam source, an objective lens, an E×B separator, and a secondary electron beam detector; a stage for holding the sample, and relatively moving the sample with respect to the electron-optical column; a working chamber for accommodating the stage and capable of controlling the interior thereof in a vacuum atmosphere; a loader for supplying a sample to the stage; a voltage applying mechanism for applying a voltage to the sample, and capable of applying at least two voltages to a lower electrode of the objective lens; and an alignment mechanism for measuring a direction in which dies are arranged on the sample. When the sample is evaluated, a direction in which the stage is moved is corrected to align with the direction in which the dies are arranged.

25. 发明授权

US07425703B2 Electron beam apparatus, a device manufacturing method using the same apparatus, a pattern evaluation method, a device manufacturing method using the same method, and a resist pattern or processed wafer evaluation method 有权
标题翻译：电子束装置，使用相同装置的装置制造方法，图案评价方法，使用相同方法的装置制造方法以及抗蚀剂图案或加工晶片评估方法
公开(公告)号：US07425703B2
公开(公告)日：2008-09-16
申请号：US11058216
申请日：2005-02-16
申请人： Mamoru Nakasuji , Tohru Satake , Nobuharu Noji , Takeshi Murakami , Kenji Watanabe , Toshifumi Kimba , Kenichi Suematsu
发明人： Mamoru Nakasuji , Tohru Satake , Nobuharu Noji , Takeshi Murakami , Kenji Watanabe , Toshifumi Kimba , Kenichi Suematsu
IPC分类号： G01N23/225
CPC分类号： H01J37/28 , G01N23/225 , H01J2237/0635 , H01J2237/2817
摘要： An object of the present invention is to provide an electron beam apparatus, in which a plurality of electron beams, e.g., four electron beams, is produced for one optical axis with a relatively high current achieved for each electron beam.Provided is an electron beam apparatus comprising: an electron beam emitter (32) having an electron gun (30), said electron gun (30) disposed along an optical axis (23) and operable to emit a plurality of off-axis electron beams along a direction defined by a certain angle with respect to the optical axis (23); a plurality of apertures (34) disposed at a location offset from the optical axis (23); and an electromagnetic lens (7) for forming a magnetic field between the electron gun (30) and the apertures (34) to control the plurality of off-axis electron beams emitted from the electron gun (30) so that the plurality of off-axis electron beams passes through the apertures (34).
摘要翻译：本发明的目的是提供一种电子束装置，其中为每个电子束获得的相对高的电流为一个光轴产生多个电子束，例如四个电子束。本发明提供一种电子束装置，包括：具有电子枪（30）的电子束发射器（32），所述电子枪（30）沿着光轴（23）设置并且可操作以沿着光轴发射多个离轴电子束相对于光轴（23）限定一定角度的方向; 设置在偏离光轴（23）的位置处的多个孔（34）; 以及用于在电子枪（30）和孔（34）之间形成磁场的电磁透镜（7），以控制从电子枪（30）发射的多个离轴电子束，轴电子束通过孔（34）。

26. 发明申请

US20070235644A1 Inspection system by charged particle beam and method of manufacturing devices using the same 有权
标题翻译：带电粒子束的检查系统及使用其的制造装置的方法
公开(公告)号：US20070235644A1
公开(公告)日：2007-10-11
申请号：US11806573
申请日：2007-06-01
申请人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Masahiro Hatakeyama , Toshifumi Kimba , Hiroshi Sobukawa , Shoji Yoshikawa , Takeshi Murakami , Kenji Watanabe , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Yuichiro Yamazaki , Takamitsu Nagai , Ichirota Nagahama
发明人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Masahiro Hatakeyama , Toshifumi Kimba , Hiroshi Sobukawa , Shoji Yoshikawa , Takeshi Murakami , Kenji Watanabe , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Yuichiro Yamazaki , Takamitsu Nagai , Ichirota Nagahama
IPC分类号： G01N23/00
CPC分类号： H01J29/70 , G01N23/225 , G01N23/2251 , G01N23/227 , H01J37/06 , H01J37/073 , H01J37/141 , H01J37/185 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/266 , H01J37/28 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/24564 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817 , H01L21/6719 , H01L21/67213
摘要： An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.
摘要翻译：电子束检查装置包括：电子光学装置70，具有用于从电子束源向一个电子束照射物体的电子 - 光学系统;以及用于检测由电子束投射的二次电子图像的检测器，光学系统; 用于相对于电子 - 光学系统保持和移动物体的平台系统50; 微型环境室20，用于向物体供应清洁气体，以防止灰尘与物体接触; 用于容纳平台装置的工作室31，工作室可控制为具有真空气氛; 设置在微环境室和工作室之间的至少两个装载室41,42适于独立控制以具有真空气氛; 以及用于通过装载室将物体传送到舞台系统的装载器60。

27. 发明授权

US07247848B2 Electron beam apparatus and method of manufacturing semiconductor device using the apparatus 失效
标题翻译：电子束装置及使用该装置制造半导体器件的方法
公开(公告)号：US07247848B2
公开(公告)日：2007-07-24
申请号：US10445826
申请日：2003-05-28
申请人： Mamoru Nakasuji , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi , Naoto Kihara , Hiroshi Nishimura
发明人： Mamoru Nakasuji , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi , Naoto Kihara , Hiroshi Nishimura
IPC分类号： H01L21/66 , G01N23/00 , H01J37/153
CPC分类号： H01J37/185 , G01N23/225 , G01N23/2251 , H01J37/06 , H01J37/073 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/28 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/24564 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817
摘要： The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.
摘要翻译：本发明提供了一种用于评价样品表面的电子束装置，其具有用于用一次电子束照射样品的初级电光系统，检测系统和用于引导从二次电子束发射的二次电子束通过将一次电子束照射到检测系统的样品表面。

28. 发明授权

US07223973B2 Apparatus for inspection with electron beam, method for operating same, and method for manufacturing semiconductor device using former 失效
公开(公告)号：US07223973B2
公开(公告)日：2007-05-29
申请号：US11037084
申请日：2005-01-19
申请人： Toshifumi Kimba , Tohru Satake , Tsutomu Karimata , Kenji Watanabe , Nobuharu Noji , Takeshi Murakami , Masahiro Hatakeyama , Mamoru Nakasuji , Hirosi Sobukawa , Shoji Yoshikawa , Shin Oowada , Mutsumi Saito
发明人： Toshifumi Kimba , Tohru Satake , Tsutomu Karimata , Kenji Watanabe , Nobuharu Noji , Takeshi Murakami , Masahiro Hatakeyama , Mamoru Nakasuji , Hirosi Sobukawa , Shoji Yoshikawa , Shin Oowada , Mutsumi Saito
IPC分类号： G01N23/225
CPC分类号： H01J37/222 , G01N23/225 , G01N23/2251 , H01J37/06 , H01J37/073 , H01J37/185 , H01J37/20 , H01J37/244 , H01J37/28 , H01J2237/0216 , H01J2237/082 , H01J2237/2002 , H01J2237/2007 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/24564 , H01J2237/2806 , H01J2237/2813 , H01J2237/2816 , H01J2237/2817 , H01L2224/48227 , H01L2924/01019 , H01L2924/01025 , H01L2924/01057 , H01L2924/01067 , H01L2924/01078 , H01L2924/10253 , H01L2924/12032 , H01L2924/3025 , H01L2924/00
摘要： A substrate inspection apparatus 1-1 (FIG. 1) of the present invention performs the following steps of: carrying a substrate “S” to be inspected into an inspection chamber 23-1; maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; moving successively said substrate by means of a stage 26-1 with at least one degree of freedom; irradiating an electron beam having a specified width; helping said electron beam reach to a surface of said substrate via a primary electron optical system 10-1; trapping secondary electrons emitted from said substrate via a secondary electron optical system 20-1 and guiding it to a detecting system 35-1; forming a secondary electron image in an image processing system based on a detection signal of a secondary electron beam obtained by said detecting system; detecting a defective location in said substrate based on the secondary electron image formed by said image processing system; indicating and/or storing said defective location in said substrate by CPU 37-1; and taking said completely inspected substrate out of the inspection chamber. Thereby, the defect inspection on the substrate can be performed successively with high level of accuracy and efficiency as well as with higher throughput.

29. 发明授权

US06593152B2 Electron beam apparatus and method of manufacturing semiconductor device using the apparatus 失效
公开(公告)号：US06593152B2
公开(公告)日：2003-07-15
申请号：US09985325
申请日：2001-11-02
申请人： Mamoru Nakasuji , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi , Naoto Kihara , Hiroshi Nishimura
发明人： Mamoru Nakasuji , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi , Naoto Kihara , Hiroshi Nishimura
IPC分类号： H01L2166
CPC分类号： H01J37/185 , G01N23/225 , G01N23/2251 , H01J37/06 , H01J37/073 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/28 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/24564 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817
摘要： The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.

30. 发明申请

US20060060790A1 System and method for evaluation using electron beam and manufacture of devices 失效
标题翻译：使用电子束进行评估的系统和方法以及器件的制造
公开(公告)号：US20060060790A1
公开(公告)日：2006-03-23
申请号：US10998160
申请日：2004-11-29
申请人： Mamoru Nakasuji , Tohru Satake , Takao Kato , Nobuharu Noji
发明人： Mamoru Nakasuji , Tohru Satake , Takao Kato , Nobuharu Noji
IPC分类号： H01J1/50 , H01T23/00
CPC分类号： H01J37/141 , B82Y10/00 , B82Y15/00 , H01J37/09 , H01J37/12 , H01J37/1474 , H01J37/28 , H01J2237/0453 , H01J2237/06316 , H01J2237/244 , H01J2237/2538 , H01J2237/2817
摘要： An electron beam apparatus having a longer life time of cathode, and allowing a plurality of electron beams to be arranged adequately around an optical axis and five or more electron beams to be formed from a single electron gun. The electron beams emitted from a cathode made of ZrO/W (tungsten zirconium oxide) or a cathode made of carbide of transition metal to the off-optical axis directions may be converged on a sample to scan it. The apparatus includes a plate for reducing a vacuum conductance defined between the electron gun chamber side and the sample side, and apertures are formed through the plate at locations offset from the optical axis allowing for the passage of the electron beams. In order to evaluate a pattern on the sample, the electron beam emitted from the electron gun is incident to the sample surface via an objective lens. The objective lens is composed of a flat electrode having an aperture centered on the optical axis and placed in parallel with the sample surface and an electromagnetic lens including a gap formed in a side facing to the sample. Further, in order to inspect a mask, spacing among a plurality of electron beams after having passed through the mask are extended by a magnifying lens and thus widely spaced electron beams are then converted into optical signal in a scintillator.
摘要翻译：一种电子束装置，具有较长的阴极使用寿命，并允许多个电子束在光轴周围适当布置，并可由单个电子枪形成五个或更多个电子束。从由ZrO / W（钨氧化锆）制成的阴极或由过渡金属的碳化物制成的阴极发射到离轴方向的电子束可以会聚在样品上以进行扫描。该装置包括用于减小限定在电子枪室侧和样品侧之间的真空电导的板，并且在偏离光轴的位置处穿过板形成允许电子束通过的孔。为了评估样品上的图案，从电子枪发射的电子束通过物镜入射到样品表面。物镜由平面电极构成，该平面电极具有以光轴为中心并且与样品表面平行放置的孔，以及包括在面向样品的一侧形成的间隙的电磁透镜。此外，为了检查掩模，在通过掩模之后的多个电子束之间的间隔通过放大透镜延伸，并且因此在闪烁体中将大量间隔的电子束转换成光信号。

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