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    • 22. 发明申请
    • SEMICONDUCTOR LASER DEVICE
    • 半导体激光器件
    • WO1996012328A1
    • 1996-04-25
    • PCT/JP1995002118
    • 1995-10-16
    • MITSUI PETROCHEMICAL INDUSTRIES, LTD.OKUBO, AtsushiYAMADA, YoshikazuFUJIMOTO, TsuyoshiOKADA, SatoruNAITO, YumiMURO, Kiyofumi
    • MITSUI PETROCHEMICAL INDUSTRIES, LTD.
    • H01S03/18
    • B82Y20/00H01S5/204H01S5/222H01S5/2231H01S5/2238H01S5/3432
    • On a buffer layer (32) composed of n-GaAs are formed, as shown in the Fig., a clad layer (31) composed of n-AlGaAs; a waveguide layer (30); a carrier block layer (29); a side barrier layer (28) composed of non-doped AlGaAs; an active layer (27) including two quantum well layers of non-doped GaAs and a barrier layer of AlGaAs; a side barrier layer (26) composed of non-doped AlGaAs; a carrier block layer (25) composed of p-AlGaAs; a waveguide layer (23), a clad layer (22); and a cap layer (21) composed of p-GaAs in the order mentioned. In the waveguide layer (23) are formed current constriction layers (24), having a low refractive index resulting from its aluminum content more than that in the waveguide layer (23), which sandwich a striped active region (34). Thus, a difference in the refractive index appears between the active region (34) and a buried region (33) in which the current constriction layers (24) exist, thereby to form a refractive index waveguide structure. There is thus obtained a semiconductor laser device of the refractive index waveguide type that features a high output and can be easily fabricated.
    • 如图所示,在由n-GaAs构成的缓冲层(32)上形成由n-AlGaAs构成的覆层(31); 波导层(30); 载体阻挡层(29); 由非掺杂AlGaAs构成的侧面阻挡层(28) 包括两个非掺杂GaAs量子阱层和AlGaAs阻挡层的有源层(27); 由非掺杂AlGaAs构成的侧面阻挡层(26) 由p-AlGaAs构成的载流子阻挡层(25); 波导层(23),覆层(22); 和由p-GaAs组成的覆盖层(21)。 在波导层(23)中形成有电流收缩层(24),其具有由铝的含量高于夹在条形有源区域(34)中的波导层(23)中的低折射率的低折射率。 因此,在有源区域(34)和存在电流收缩层(24)的埋入区域(33)之间出现折射率差异,从而形成折射率波导结构。 由此获得了折射率波导型的半导体激光器件,该半导体激光器具有高输出特性并且可以容易地制造。
    • 23. 发明申请
    • LITHIUM ION-CONDUCTIVE GLASS FILM AND THIN CARBON DIOXIDE GAS SENSOR USING THE SAME FILM
    • 锂离子导电玻璃膜和二氧化碳气体传感器使用相同的膜
    • WO1995034515A1
    • 1995-12-21
    • PCT/JP1995001181
    • 1995-06-13
    • MITSUI PETROCHEMICAL INDUSTRIES, LTD.SHINDO, Kiyotaka
    • MITSUI PETROCHEMICAL INDUSTRIES, LTD.
    • C03C04/18
    • C03C8/24C03C4/18G01N27/4074G01N33/004
    • A lithium ion-conductive glass film containing 20-80 mol% Li2O. It has a dense structure capable of shutting off a gas, and can be used as a solid electrolyte for a dioxide gas sensor. A thin carbon dioxide gas sensor characterized in that it includes this lithium ion-conductive glass film as a solid electrolyte. This sensor is capable of completely eliminating noise, which occurs due to the permeation of a gas therethrough, owing to the lithium ion-conductive glass film having a dense structure, and improving the accuracy of a measurement value of dioxide gas concentration. Since the lithium ion-conductive glass of this sensor is formed to a film structure, the internal resistance of the sensor is low, and the sensor is operated at a low operating temperature, and has a high response speed. Therefore, this sensor permits the use of a smaller heater than those used in the conventional sensor of this kind, and it becomes compact even when it is integrated with a heater. In the thin carbon dioxide gas sensor according to the present invention using an oxygen ion-conductive ceramic material for a substrate or a film, the oxygen ion-conductive ceramic material shuts off ions other than oxygen ions. Accordingly, the concentration of a carbon dioxide gas can be measured by inserting this carbon dioxide gas sensor as a whole into an object gas to be examined.
    • 含有20-80mol%Li2O的锂离子传导性玻璃膜。 它具有能够关闭气体的致密结构,可用作二氧化碳气体传感器的固体电解质。 一种薄的二氧化碳气体传感器,其特征在于它包括作为固体电解质的该锂离子传导性玻璃膜。 由于具有致密结构的锂离子传导性玻璃膜,该传感器能够完全消除由于气体渗透而发生的噪声,并且提高了二氧化碳气体浓度的测量值的精度。 由于该传感器的锂离子传导性玻璃被形成为膜结构,所以传感器的内部电阻低,并且传感器在低工作温度下工作,并且具有高响应速度。 因此,该传感器允许使用比常规传感器中使用的更小的加热器,并且即使当其与加热器集成时也变得紧凑。 在使用氧离子传导性陶瓷材料作为基板或薄膜的本发明的薄型二氧化碳气体传感器中,氧离子传导性陶瓷材料切断氧离子以外的离子。 因此,二氧化碳气体的浓度可以通过将该二氧化碳气体传感器整体插入待检查对象气体来测定。