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    • 23. 发明授权
    • Semiconductor pressure sensor with slanted resistors
    • 具有倾斜电阻的半导体压力传感器
    • US4400681A
    • 1983-08-23
    • US237474
    • 1981-02-23
    • Ronald E. BrownLamonte R. EdisonWilliam D. Higdon
    • Ronald E. BrownLamonte R. EdisonWilliam D. Higdon
    • G01L9/04G01L9/00H01L29/84G01L1/22
    • G01L9/0054
    • A diaphragm is formed in a silicon chip by etching a rectangular cavity in one side thereof and piezoresistive resistors are formed in the other surface of the chip to sense stress changes on the diaphragm due to pressure changes. At least one resistor is placed along the edge of the diaphragm where a sharp stress peak occurs. To avoid the problem of inaccurate placement of the resistor relative to the peak, the resistor is slanted with respect to the stress ridge at a small angle of 10.degree. to 20.degree.. This makes the resistor placement and cavity alignment much less critical thereby assuring greater uniformity of response from one sensor to another at the expense of signal size for a given pressure change on the device.
    • 通过在其一侧蚀刻矩形空腔而在硅芯片中形成隔膜,并且在芯片的另一表面中形成压阻电阻器,以感测由于压力变化导致的隔膜上的应力变化。 至少有一个电阻器沿着隔膜的边缘放置,其中出现尖锐的应力峰值。 为了避免电阻器相对于峰值放置不正确的问题,电阻器以10°至20°的小角度相对于应力脊倾斜。 这使得电阻器放置和腔体对准不那么重要,从而确保了对于设备上的给定压力变化的信号尺寸的代价,从一个传感器到另一个传感器的响应更大的均匀性。