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21. 发明授权

US07667998B2 Phase change memory device and method of forming the same 有权
标题翻译：相变存储器件及其形成方法
公开(公告)号：US07667998B2
公开(公告)日：2010-02-23
申请号：US11507573
申请日：2006-08-22
申请人： Won-Cheol Jeong , Se-Ho Lee , Jae-Hyun Park , Chang-Wook Jeong
发明人： Won-Cheol Jeong , Se-Ho Lee , Jae-Hyun Park , Chang-Wook Jeong
IPC分类号： G11C11/00 , H01L27/16 , H01L21/20
CPC分类号： G11C13/0069 , G11C13/0004 , G11C2013/008 , G11C2213/52 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144
摘要： A PRAM and method of forming the same are disclosed. In various embodiments, the PRAM includes a lower insulation layer formed on a semiconductor substrate, a phase change material pattern formed on the lower insulation layer and a heating electrode contacting the phase change material pattern. The heating electrode can be formed of a material having a positive temperature coefficient such that specific resistance of the material increases as a function of temperature.
摘要翻译：公开了一种PRAM及其制造方法。在各种实施例中，PRAM包括形成在半导体衬底上的下绝缘层，形成在下绝缘层上的相变材料图案和与相变材料图案接触的加热电极。加热电极可以由具有正温度系数的材料形成，使得材料的电阻率随着温度的升高而增加。

22. 发明申请

US20080008421A1 All-optical variable optical attenuator 审中-公开
标题翻译：全光可变光衰减器
公开(公告)号：US20080008421A1
公开(公告)日：2008-01-10
申请号：US11901297
申请日：2007-09-14
申请人： Su-Nam Lee , Se-Ho Lee , Ki-Ho Park , Seong-Jae Boo
发明人： Su-Nam Lee , Se-Ho Lee , Ki-Ho Park , Seong-Jae Boo
IPC分类号： G02B6/26
CPC分类号： G02B6/34 , G02B6/14 , G02B6/266 , G02B6/3594 , G02F1/3523 , G02F2203/48 , H01S3/06754 , H01S3/09415 , H01S3/1618
摘要： Disclosed is an all-optical variable optical attenuator. The all-optical variable optical attenuator includes a nonlinear optical fiber where a pair of long-period gratings is formed in a pre-determined pattern. Alternatively, the variable optical attenuator may include a pair of optical fibers where a long-period grating is formed in each optical fiber in a pre-determined pattern to form a pair of long-period gratings on the whole, and a nonlinear optical fiber fusion-spliced between one ends of the respective optical fibers. The core layer of the nonlinear optical fiber contains semiconductor particles having a size of nanometers, a metallic particle having a size of nanometers, or a rare-earth element.
摘要翻译：公开了一种全光可变光衰减器。全光可变光衰减器包括非线性光纤，其中以预定图案形成一对长周期光栅。或者，可变光衰减器可以包括一对光纤，其中在预定图案中在每个光纤中形成长周期光栅以形成一对整体的长周期光栅，并且非线性光纤熔接在相应光纤的一端之间切割。非线性光纤的芯层包含具有纳米尺寸的半导体颗粒，具有纳米尺寸的金属颗粒或稀土元素。

23. 发明申请

US20060284237A1 Phase change memory cells having a cell diode and a bottom electrode self-aligned with each other and methods of fabricating the same 有权
标题翻译：具有单元二极管和底部电极彼此自对准的相变存储单元及其制造方法
公开(公告)号：US20060284237A1
公开(公告)日：2006-12-21
申请号：US11389996
申请日：2006-03-27
申请人： Jae-Hyun Park , Jae-Hee Oh , Se-Ho Lee , Won-Cheol Jeong
发明人： Jae-Hyun Park , Jae-Hee Oh , Se-Ho Lee , Won-Cheol Jeong
IPC分类号： H01L29/76
CPC分类号： H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： Integrated circuit devices are provided having a vertical diode therein. The devices include an integrated circuit substrate and an insulating layer on the integrated circuit substrate. A contact hole penetrates the insulating layer. A vertical diode is in a lower region of the contact hole and a bottom electrode in the contact hole has a bottom surface on a top surface of the vertical diode. The bottom electrode is self-aligned with the vertical diode. A top surface area of the bottom electrode is less than a horizontal section area of the contact hole. Methods of forming the integrated circuit devices and phase change memory cells are also provided.
摘要翻译：在其中提供具有垂直二极管的集成电路器件。这些器件包括集成电路衬底和集成电路衬底上的绝缘层。接触孔穿透绝缘层。垂直二极管位于接触孔的下部区域中，接触孔中的底部电极在垂直二极管的顶面具有底面。底部电极与垂直二极管自对准。底部电极的顶表面积小于接触孔的水平截面面积。还提供了形成集成电路器件和相变存储器单元的方法。

24. 发明申请

US20050045915A1 Phase changeable layers including protruding portions in electrodes thereof and methods of forming same 有权
标题翻译：相变层包括电极中的突出部分及其形成方法
公开(公告)号：US20050045915A1
公开(公告)日：2005-03-03
申请号：US10692578
申请日：2003-10-24
申请人： Se-Ho Lee
发明人： Se-Ho Lee
IPC分类号： H01L27/115 , H01L27/24 , H01L29/739 , H01L45/00
CPC分类号： H01L45/06 , G11C2213/52 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1666
摘要： A structure in a phase changeable memory cell can include a bottom electrode having an interlayer dielectric layer thereon, the bottom electrode can have a recess therein that extends beyond a boundary between the bottom electrode and the interlayer dielectric. A phase changeable layer can be formed in the recess and include a protruding potion of the phase changeable layer that protrudes into the bottom electrode beyond the boundary. Related methods are also disclosed.
摘要翻译：相变存储单元中的结构可以包括在其上具有层间电介质层的底部电极，底部电极可以具有延伸超过底部电极和层间电介质之间的边界的凹部。可以在凹部中形成相变层，并且包括在边界之外突出到底部电极中的相变层的突出部分。还公开了相关方法。

25. 发明授权

US06841793B2 Phase-changeable devices having an insulating buffer layer and methods of fabricating the same 有权
标题翻译：具有绝缘缓冲层的相变装置及其制造方法
公开(公告)号：US06841793B2
公开(公告)日：2005-01-11
申请号：US10620830
申请日：2003-07-16
申请人： Se-Ho Lee
发明人： Se-Ho Lee
IPC分类号： H01L27/10 , G11C16/02 , H01L27/115 , H01L27/24 , H01L45/00 , H01L47/00
CPC分类号： G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1666
摘要： Phase-changeable devices and method of fabricating phase-changeable devices are provided. The phase-changeable devices have a first insulating layer disposed on a first electrode. A heater plug extends through the first insulating layer and contacts the first electrode. A buffer insulating layer region is disposed on the first insulating layer opposite the first electrode and a phase-changeable material region is disposed on the buffer insulating layer region. The phase-changeable material region may extend into the buffer insulating layer region. The phase-changeable material region contacts a surface of the heater plug. A second electrode disposed on the phase-changeable material region. Spacers may be provided on sidewalls of the buffer insulating layer region between the phase-changeable material region and the buffer insulating layer region. The buffer insulating layer region may have a thermal expansion coefficient between the thermal expansion coefficients of the first insulating layer and the phase-changeable material region.
摘要翻译：提供了相变装置和制造相变装置的方法。相变装置具有设置在第一电极上的第一绝缘层。加热器插头延伸穿过第一绝缘层并接触第一电极。缓冲绝缘层区域设置在与第一电极相对的第一绝缘层上，相变材料区域设置在缓冲绝缘层区域上。相变材料区域可以延伸到缓冲绝缘层区域中。相变材料区域接触加热器插头的表面。设置在相变材料区域上的第二电极。间隔件可以设置在相变材料区域和缓冲绝缘层区域之间的缓冲绝缘层区域的侧壁上。缓冲绝缘层区域可以具有在第一绝缘层和相变材料区域的热膨胀系数之间的热膨胀系数。

26. 发明授权

US09074048B2 Polyarylene sulfide and preparation method thereof 有权
标题翻译：聚芳硫醚及其制备方法
公开(公告)号：US09074048B2
公开(公告)日：2015-07-07
申请号：US13582859
申请日：2011-03-08
申请人： Sung-Gi Kim , Jae-Bong Lim , Se-Ho Lee
发明人： Sung-Gi Kim , Jae-Bong Lim , Se-Ho Lee
IPC分类号： C08G75/14 , C08G75/02 , C08J5/18 , C08G75/00
CPC分类号： C08G75/02 , C08G75/14 , C08J5/18 , C08J2381/04 , Y10T428/2982
摘要： This disclosure relates to polyarylene sulfide that may exhibit and maintain excellent properties and a method for preparing the same, wherein the polyarylene sulfide is in the form of pellet of 2 to 10 mm size immediately after melt polymerization, and has residual solvent content of 300 ppm or less, based on the total weight of resin.The polyarylene sulfide may exhibit and maintain excellent properties, particularly it does not generate foam in the product or stain on the surface, has excellent mechanical properties such as tensile strength, and the like, and thus, it may be usefully applied in the industrial field of preparing polyarylene sulfide and manufacturing a molded product using the same.
摘要翻译：本公开涉及可以显示和保持优异性能的聚芳硫醚及其制备方法，其中聚芳硫醚在熔融聚合后立即为粒径为2至10mm的颗粒形式，并且残留溶剂含量为300ppm 或更低，基于树脂的总重量。聚芳硫醚可以表现出并且保持优异的性能，特别是在产品中不产生泡沫或表面上的污渍，具有优异的机械性能如拉伸强度等，因此可用于工业领域制备聚芳硫醚并制造使用其的模塑产品。

27. 发明申请

US20120329984A1 POLYARYLENE SULFIDE AND PREPARATION METHOD THEREOF 有权
标题翻译：聚亚烷基硫醚及其制备方法
公开(公告)号：US20120329984A1
公开(公告)日：2012-12-27
申请号：US13582859
申请日：2011-03-08
申请人： Sung-Gi Kim , Jae-bong Lim , Se-Ho Lee
发明人： Sung-Gi Kim , Jae-bong Lim , Se-Ho Lee
IPC分类号： C08G75/14
CPC分类号： C08G75/02 , C08G75/14 , C08J5/18 , C08J2381/04 , Y10T428/2982
摘要： This disclosure relates to polyarylene sulfide that may exhibit and maintain excellent properties and a method for preparing the same, wherein the polyarylene sulfide is in the form of pellet of 2 to 10 mm size immediately after melt polymerization, and has residual solvent content of 300 ppm or less, based on the total weight of resin.The polyarylene sulfide may exhibit and maintain excellent properties, particularly it does not generate foam in the product or stain on the surface, has excellent mechanical properties such as tensile strength, and the like, and thus, it may be usefully applied in the industrial field of preparing polyarylene sulfide and manufacturing a molded product using the same.
摘要翻译：本公开涉及可以显示和保持优异性能的聚芳硫醚及其制备方法，其中聚芳硫醚在熔融聚合后立即为粒径为2至10mm的颗粒形式，并且残留溶剂含量为300ppm 或更低，基于树脂的总重量。聚芳硫醚可以表现出并且保持优异的性能，特别是在产品中不产生泡沫或表面上的污渍，具有优异的机械性能如拉伸强度等，因此可用于工业领域制备聚芳硫醚并制造使用其的模塑产品。

28. 发明授权

US08119478B2 Multi-bit phase-change random access memory (PRAM) with diameter-controlled contacts and methods of fabricating and programming the same 有权
标题翻译：具有直径控制触点的多位相变随机存取存储器（PRAM）及其制造和编程方法
公开(公告)号：US08119478B2
公开(公告)日：2012-02-21
申请号：US12640567
申请日：2009-12-17
申请人： Won-Cheol Jeong , Hyeong-Jun Kim , Se-Ho Lee , Jae-Hyun Park , Chang-Wook Jeong
发明人： Won-Cheol Jeong , Hyeong-Jun Kim , Se-Ho Lee , Jae-Hyun Park , Chang-Wook Jeong
IPC分类号： H01L21/336
CPC分类号： H01L45/06 , G11C11/56 , G11C11/5678 , G11C13/0004 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： A phase-change random-access memory (PRAM) device includes a chalcogenide element, the chalcogenide element comprising a material which can assume a crystalline state or an amorphous state upon application of a heating current. A first contact is connected to a first region of the chalcogenide element and has a first cross-sectional area. A second contact is connected to a second region of the chalcogenide element and having a second cross-sectional area. A first programmable volume of the chalcogenide material is defined in the first region of the chalcogenide element, a state of the first programmable volume being programmable according to a resistance associated with the first contact. A second programmable volume of the chalcogenide material is defined in the second region of the chalcogenide element, a state of the second programmable volume being programmable according to a second resistance associated with the second contact.
摘要翻译：相变随机存取存储器（PRAM）装置包括硫族化物元素，硫族化物元素包括在施加加热电流时可以呈现结晶状态或非晶状态的材料。第一触点连接到硫族化物元件的第一区域并且具有第一横截面积。第二接触件连接到硫族化物元件的第二区域并且具有第二横截面积。硫族化物材料的第一可编程体积被限定在硫族化物元素的第一区域中，第一可编程体积的状态可根据与第一接触相关联的电阻来编程。硫族化物材料的第二可编程体积被限定在硫族化物元素的第二区域中，第二可编程体积的状态可根据与第二接触相关联的第二电阻来编程。

29. 发明申请

US20100090194A1 MULTI-BIT PHASE-CHANGE RANDOM ACCESS MEMORY (PRAM) WITH DIAMETER-CONTROLLED CONTACTS AND METHODS OF FABRICATING AND PROGRAMMING THE SAME 有权
标题翻译：具有直径控制联系人的多位相变随机访问存储器（PRAM）及其制作和编程方法
公开(公告)号：US20100090194A1
公开(公告)日：2010-04-15
申请号：US12640567
申请日：2009-12-17
申请人： Won-Cheol Jeong , Hyeong-Jun Kim , Se-Ho Lee , Jae-Hyun Park , Chang-Wook Jeong
发明人： Won-Cheol Jeong , Hyeong-Jun Kim , Se-Ho Lee , Jae-Hyun Park , Chang-Wook Jeong
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , G11C11/56 , G11C11/5678 , G11C13/0004 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： A phase-change random-access memory (PRAM) device includes a chalcogenide element, the chalcogenide element comprising a material which can assume a crystalline state or an amorphous state upon application of a heating current. A first contact is connected to a first region of the chalcogenide element and has a first cross-sectional area. A second contact is connected to a second region of the chalcogenide element and having a second cross-sectional area. A first programmable volume of the chalcogenide material is defined in the first region of the chalcogenide element, a state of the first programmable volume being programmable according to a resistance associated with the first contact. A second programmable volume of the chalcogenide material is defined in the second region of the chalcogenide element, a state of the second programmable volume being programmable according to a second resistance associated with the second contact.
摘要翻译：相变随机存取存储器（PRAM）装置包括硫族化物元素，硫族化物元素包括在施加加热电流时可以呈现结晶状态或非晶状态的材料。第一触点连接到硫族化物元件的第一区域并且具有第一横截面积。第二接触件连接到硫族化物元件的第二区域并且具有第二横截面积。硫族化物材料的第一可编程体积被限定在硫族化物元素的第一区域中，第一可编程体积的状态可根据与第一接触相关联的电阻来编程。硫族化物材料的第二可编程体积被限定在硫族化物元素的第二区域中，第二可编程体积的状态可根据与第二接触相关联的第二电阻来编程。

30. 发明申请

US20080206921A1 METHODS OF FORMING PHASE CHANGEABLE LAYERS INCLUDING PROTRUDING PORTIONS IN ELECTRODES THEREOF 有权
标题翻译：形成相变层的方法，其中包括电极中的导电部分
公开(公告)号：US20080206921A1
公开(公告)日：2008-08-28
申请号：US12114443
申请日：2008-05-02
申请人： Se-Ho Lee
发明人： Se-Ho Lee
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , G11C2213/52 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1666
摘要： A method of forming a structure in a phase changeable memory cell can include forming a bottom electrode having an interlayer dielectric layer thereon, the bottom electrode having a recess therein that extends beyond a boundary between the bottom electrode and the interlayer dielectric. A phase changeable layer can be formed in the recess including a protruding potion of the phase changeable layer that protrudes into the bottom electrode beyond the boundary.
摘要翻译：在相变存储单元中形成结构的方法可以包括在其上形成具有层间电介质层的底部电极，其中底部电极具有延伸超过底部电极和层间电介质之间的边界的凹部。可以在凹部中形成相变层，该相变层包括在边界之外突出到底部电极中的相变层的突出部分。

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