专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US07790582B2 Method for fabricating polysilicon liquid crystal display device 有权
标题翻译：制造多晶硅液晶显示装置的方法
公开(公告)号：US07790582B2
公开(公告)日：2010-09-07
申请号：US11798474
申请日：2007-05-14
申请人： Kum-Mi Oh
发明人： Kum-Mi Oh
IPC分类号： H01L21/02
CPC分类号： H01L29/66757 , H01L29/66765
摘要： A method for fabricating a polysilicon liquid crystal display device includes: forming a first amorphous silicon layer on a substrate; forming a photoresist pattern on the first amorphous silicon layer; forming a second amorphous silicon layer over the photoresist pattern and the first amorphous silicon layer; defining a channel region on the first amorphous silicon layer; crystallizing the first and second silicon layers; forming an active layer by patterning the crystallized silicon layers; forming a first insulating layer on the active layer; forming a gate electrode on the first insulating layer; forming source and drain electrodes electrically connected to the active layer; and forming a pixel electrode electrically connected to the drain electrode.
摘要翻译：一种制造多晶硅液晶显示装置的方法，包括：在基板上形成第一非晶硅层; 在所述第一非晶硅层上形成光致抗蚀剂图案; 在所述光致抗蚀剂图案和所述第一非晶硅层上形成第二非晶硅层; 限定所述第一非晶硅层上的沟道区; 使第一和第二硅层结晶; 通过图案化结晶的硅层形成有源层; 在所述有源层上形成第一绝缘层; 在所述第一绝缘层上形成栅电极; 形成与所述有源层电连接的源极和漏极; 以及形成与漏电极电连接的像素电极。

22. 发明授权

US07488979B2 Liquid crystal display device including driving circuit and method of fabricating the same 有权
标题翻译：包括驱动电路的液晶显示装置及其制造方法
公开(公告)号：US07488979B2
公开(公告)日：2009-02-10
申请号：US12010873
申请日：2008-01-30
申请人： Kum-Mi Oh , Kwang-Sik Hwang
发明人： Kum-Mi Oh , Kwang-Sik Hwang
IPC分类号： H01L29/04
CPC分类号： G02F1/13454 , H01L27/1255 , H01L27/1288 , H01L29/78621 , Y10S148/15
摘要： A method of fabricating an array substrate structure for a liquid crystal display device includes defining a display area and a non-display area on a substrate, the display area having a pixel TFT portion and a pixel electrode area, and the non-display area having an n-type driving TFT portion and a p-type driving TFT portion; forming a first gate electrode in the display area, a second and a third gate electrodes and a first capacitor electrode in the non-display area; an amorphous silicon layer on the substrate; crystallizing the amorphous silicon layer to a polycrystalline silicon layer and doping specific portions of the polycrystalline silicon layer with plurality of impurity concentrations; and forming a first semiconductor layer in the display area, a second and a third semiconductor layers and a second capacitor electrode in the non-display area.
摘要翻译：制造液晶显示装置的阵列基板结构的方法包括在基板上限定显示区域和非显示区域，所述显示区域具有像素TFT部分和像素电极区域，并且所述非显示区域具有 n型驱动TFT部分和p型驱动TFT部分; 在显示区域中形成第一栅电极，在非显示区域中形成第二和第三栅电极和第一电容器电极; 衬底上的非晶硅层; 将所述非晶硅层结晶到多晶硅层并掺杂多晶杂质浓度的所述多晶硅层的特定部分; 以及在所述显示区域中形成第一半导体层，在所述非显示区域中形成第二和第三半导体层和第二电容器电极。

23. 发明授权

US07410842B2 Method for fabricating thin film transistor of liquid crystal display device 有权
标题翻译：制造液晶显示装置薄膜晶体管的方法
公开(公告)号：US07410842B2
公开(公告)日：2008-08-12
申请号：US11211212
申请日：2005-08-19
申请人： Kum-Mi Oh
发明人： Kum-Mi Oh
IPC分类号： H01L21/70
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/78621
摘要： A method for fabricating a thin film transistor for an LCD device is presented that uses six mask processes. Portions of a semiconductor layer formed on a substrate are doped with first and second impurities in different regions. A conductive layer is deposited and the conductive and semiconductor layers patterned together by diffraction exposure using a diffraction pattern mask to define source and drain regions and an activate region. Ashing is performed and portions of the conductive layer removed to form the source, drain and channel. A gate insulating layer is formed on the substrate and gates are formed on the gate insulating layer. A passivation film is formed on the substrate and a pixel contact hole exposing one of the drains is etched. A pixel electrode is then deposited such that the pixel electrode is connected to the drain through the pixel contact hole.
摘要翻译：提出了一种用于制造用于LCD装置的薄膜晶体管的方法，其使用六个掩模工艺。在基板上形成的半导体层的部分在不同的区域掺杂有第一和第二杂质。沉积导电层，并且使用衍射图案掩模通过衍射曝光将导电和半导体层图案化在一起，以限定源极和漏极区域以及激活区域。执行灰化并去除导电层的部分以形成源极，漏极和沟道。在基板上形成栅极绝缘层，在栅极绝缘层上形成栅极。在衬底上形成钝化膜，并且蚀刻暴露其中一个漏极的像素接触孔。然后沉积像素电极，使得像素电极通过像素接触孔连接到漏极。

24. 发明申请

US20070218576A1 Method for fabricating polysilicon liquid crystal display device 有权
标题翻译：制造多晶硅液晶显示装置的方法
公开(公告)号：US20070218576A1
公开(公告)日：2007-09-20
申请号：US11798474
申请日：2007-05-14
申请人： Kum-Mi Oh
发明人： Kum-Mi Oh
IPC分类号： H01L21/02
CPC分类号： H01L29/66757 , H01L29/66765
摘要： A method for fabricating a polysilicon liquid crystal display device includes: forming a first amorphous silicon layer on a substrate; forming a photoresist pattern on the first amorphous silicon layer; forming a second amorphous silicon layer over the photoresist pattern and the first amorphous silicon layer; defining a channel region on the first amorphous silicon layer; crystallizing the first and second silicon layers; forming an active layer by patterning the crystallized silicon layers; forming a first insulating layer on the active layer; forming a gate electrode on the first insulating layer; forming source and drain electrodes electrically connected to the active layer; and forming a pixel electrode electrically connected to the drain electrode.
摘要翻译：一种制造多晶硅液晶显示装置的方法，包括：在基板上形成第一非晶硅层; 在所述第一非晶硅层上形成光致抗蚀剂图案; 在所述光致抗蚀剂图案和所述第一非晶硅层上形成第二非晶硅层; 限定所述第一非晶硅层上的沟道区; 使第一和第二硅层结晶; 通过图案化结晶的硅层形成有源层; 在所述有源层上形成第一绝缘层; 在所述第一绝缘层上形成栅电极; 形成与所述有源层电连接的源极和漏极; 以及形成与漏电极电连接的像素电极。

25. 发明申请

US20110227850A1 TOUCH SENSING TYPE LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：触摸感应式液晶显示装置及其制造方法
公开(公告)号：US20110227850A1
公开(公告)日：2011-09-22
申请号：US13050990
申请日：2011-03-18
申请人： Kum-Mi Oh , Yong-Su An , Kyoung-Jin Nam , Han-Seok Lee
发明人： Kum-Mi Oh , Yong-Su An , Kyoung-Jin Nam , Han-Seok Lee
IPC分类号： G06F3/041 , H01J9/24 , H01J9/02
CPC分类号： G06F3/0412 , G02F1/13338 , G02F1/134363 , G02F2001/134372 , G02F2202/22 , G06F3/044 , G06F2203/04107
摘要： A touch sensing type liquid crystal display device includes an array substrate includes an array substrate including a first substrate, a common electrode, a pixel electrode, and a touch sensing unit; a color filter substrate including a second substrate and facing the array substrate; an anti-static layer on an outer side of the second substrate and including an inorganic material and conductive particles; and a liquid crystal layer between the first substrate and an inner side of the second substrate.
摘要翻译：一种触摸感应型液晶显示装置，包括具有包括第一基板，公共电极，像素电极和触摸感测单元的阵列基板的阵列基板。彩色滤光片基板，包括第二基板并面对阵列基板; 在所述第二基板的外侧上的防静电层，并且包括无机材料和导电颗粒; 以及在第一基板和第二基板的内侧之间的液晶层。

26. 发明申请

US20090219531A1 Detecting device and method for detecting unevenness of a glass substrate 有权
标题翻译：用于检测玻璃基板的不均匀性的检测装置和方法
公开(公告)号：US20090219531A1
公开(公告)日：2009-09-03
申请号：US12314699
申请日：2008-12-15
申请人： Kum-Mi Oh , Yong-Won Zeon
发明人： Kum-Mi Oh , Yong-Won Zeon
IPC分类号： G01N21/21 , G02F1/13
CPC分类号： G01B11/306 , G01N21/958
摘要： A detecting device of unevenness of a glass substrate includes a light source emitting a light; a polarizer polarizing the light; a standard cell including opposing outer surfaces, the glass substrate attached to one of the opposing outer surfaces, the polarized light passing through the standard cell and the glass substrate; an analyzer detecting and analyzing the light passing through the standard cell and the glass substrate.
摘要翻译：玻璃基板的不均匀的检测装置包括发光的光源; 偏振光的偏光镜; 包括相对的外表面的标准单元，附接到相对的外表面中的一个的玻璃基板，穿过标准单元和玻璃基板的偏振光; 检测并分析通过标准单元和玻璃基板的光的分析器。

27. 发明授权

US07235416B2 Method for fabricating polysilicon liquid crystal display device 有权
公开(公告)号：US07235416B2
公开(公告)日：2007-06-26
申请号：US11002649
申请日：2004-12-03
申请人： Kum-Mi Oh
发明人： Kum-Mi Oh
IPC分类号： H01L21/00
CPC分类号： H01L29/66757 , H01L29/66765
摘要： A method for fabricating a polysilicon liquid crystal display device includes: forming a first amorphous silicon layer on a substrate; forming a photoresist pattern on the first amorphous silicon layer; forming a second amorphous silicon layer over the photoresist pattern and the first amorphous silicon layer; defining a channel region on the first amorphous silicon layer; crystallizing the first and second silicon layers; forming an active layer by patterning the crystallized silicon layers; forming a first insulating layer on the active layer; forming a gate electrode on the first insulating layer; forming source and drain electrodes electrically connected to the active layer; and forming a pixel electrode electrically connected to the drain electrode.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式