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21. 发明申请

US20090033360A1 PROGRAMMABLE VIA DEVICES WITH AIR GAP ISOLATION 有权
标题翻译：可通过具有空气隔离的装置进行编程
公开(公告)号：US20090033360A1
公开(公告)日：2009-02-05
申请号：US11833354
申请日：2007-08-03
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
IPC分类号： H03K19/177 , H01L45/00
CPC分类号： H01L45/06 , H01L28/20 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable via device is provided. The programmable via device comprises a first dielectric layer; a heater over the first dielectric layer; an air gap separating at least a portion of the heater from the first dielectric layer; an isolation layer over the first dielectric layer covering at least a portion of the heater; a capping layer over a side of the isolation layer opposite the first dielectric layer; at least one programmable via extending through the capping layer and at least a portion of the isolation layer and in contact with the heater, the programmable via comprising at least one phase change material; a conductive cap over the programmable via; a second dielectric layer over a side of the capping layer opposite the isolation layer; a first conductive via and a second conductive via, each extending through the second dielectric layer, the capping layer and at least a portion of the isolation layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive cap.
摘要翻译：提供可编程的器件及其制造方法。在一个方面，提供了可编程通路装置。可编程通孔装置包括第一介电层; 第一介电层上的加热器; 将所述加热器的至少一部分与所述第一介电层分开的气隙; 覆盖所述加热器的至少一部分的所述第一介电层上的隔离层; 在所述隔离层的与所述第一介电层相对的一侧上的覆盖层; 至少一个可编程通道，其延伸穿过所述封盖层和所述隔离层的至少一部分并与所述加热器接触，所述可编程通孔包括至少一个相变材料; 可编程通孔上的导电盖; 在覆盖层的与隔离层相对的一侧上的第二电介质层; 第一导电通孔和第二导电通孔，每个延伸穿过第二介电层，封盖层和至少一部分隔离层并与加热器接触; 以及延伸穿过所述第二介电层并与所述导电盖接触的第三导电通孔。

22. 发明申请

US20090033358A1 PROGRAMMABLE VIA DEVICES IN BACK END OF LINE LEVEL 有权
标题翻译：通过线路后端的设备可编程
公开(公告)号：US20090033358A1
公开(公告)日：2009-02-05
申请号：US11833321
申请日：2007-08-03
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
IPC分类号： H01L45/00 , H03K19/177
CPC分类号： H01L28/65 , H01L28/20 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1683 , Y10S977/754
摘要： Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable via device is provided. The programmable via device comprises a first dielectric layer; at least one isolation layer over the first dielectric layer; a heater within the isolation layer; a capping layer over a side of the isolation layer opposite the first dielectric layer; at least one programmable via extending through the capping layer and at least a portion of the isolation layer and in contact with the heater, the programmable via comprising at least one phase change material; a conductive cap over the programmable via; a second dielectric layer over a side of the capping layer opposite the isolation layer; a first conductive via and a second conductive via, each extending through the second dielectric layer, the capping layer and at least a portion of the isolation layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive cap.
摘要翻译：提供可编程的器件及其制造方法。在一个方面，提供了可编程通路装置。可编程通孔装置包括第一介电层; 在所述第一介电层上方的至少一个隔离层; 隔离层内的加热器; 在所述隔离层的与所述第一介电层相对的一侧上的覆盖层; 至少一个可编程通道，其延伸穿过所述封盖层和所述隔离层的至少一部分并与所述加热器接触，所述可编程通孔包括至少一个相变材料; 可编程通孔上的导电盖; 在覆盖层的与隔离层相对的一侧上的第二电介质层; 第一导电通孔和第二导电通孔，每个延伸穿过第二介电层，封盖层和至少一部分隔离层并与加热器接触; 以及延伸穿过所述第二介电层并与所述导电盖接触的第三导电通孔。

23. 发明授权

US07633079B2 Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material 有权
标题翻译：使用外部加热相变材料的BEOL区域可编程保险丝/非易失性存储器结构
公开(公告)号：US07633079B2
公开(公告)日：2009-12-15
申请号：US11850742
申请日：2007-09-06
申请人： Kuang-Neng Chen , Bruce G. Elmegreen , Deok-Kee Kim , Chandrasekharan Kothandaraman , Lia Krusin-Elbaum , Chung H. Lam , Dennis M. Newns , Byeongju Park , Sampath Purushothaman
发明人： Kuang-Neng Chen , Bruce G. Elmegreen , Deok-Kee Kim , Chandrasekharan Kothandaraman , Lia Krusin-Elbaum , Chung H. Lam , Dennis M. Newns , Byeongju Park , Sampath Purushothaman
IPC分类号： H01L47/00
CPC分类号： H01L23/5256 , H01L27/2436 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1226 , H01L45/1286 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1675 , H01L2924/0002 , H01L2924/00
摘要： A programmable phase change material (PCM) structure includes a heater element formed at a BEOL level of a semiconductor device, the BEOL level including a low-K dielectric material therein; a first via in electrical contact with a first end of the heater element and a second via in electrical contact with a second end of the heater element, thereby defining a programming current path which passes through the first via, the heater element, and the second via; a PCM element disposed above the heater element, the PCM element configured to be programmed between a lower resistance crystalline state and a higher resistance amorphous state through the use of programming currents through the heater element; and a third via in electrical contact with the PCM element, thereby defining a sense current path which passes through the third via, the PCM element, the heater element, and the second via.
摘要翻译：可编程相变材料（PCM）结构包括形成在半导体器件的BEOL级的加热器元件，BEOL级包括其中的低K电介质材料; 与加热器元件的第一端电接触的第一通孔和与加热器元件的第二端电接触的第二通孔，从而限定通过第一通孔，加热元件和第二通孔的编程电流通路通过; 设置在所述加热器元件上方的PCM元件，所述PCM元件被配置为通过使用通过所述加热器元件的编程电流在较低电阻结晶状态和较高电阻非晶态之间被编程; 以及与PCM元件电接触的第三通孔，从而限定穿过第三通孔，PCM元件，加热器元件和第二通孔的感测电流路径。

24. 发明申请

US20090039331A1 PHASE CHANGE MATERIAL STRUCTURES 审中-公开
标题翻译：相变材料结构
公开(公告)号：US20090039331A1
公开(公告)日：2009-02-12
申请号：US11834851
申请日：2007-08-07
申请人： Lawrence A. Clevenger , Bruce G. Elmegreen , Deok-Kee Kim , Chandrasekharan Kothandaraman , Lia Krusin-Elbaum , Chung H. Lam , Dennis M. Newns
发明人： Lawrence A. Clevenger , Bruce G. Elmegreen , Deok-Kee Kim , Chandrasekharan Kothandaraman , Lia Krusin-Elbaum , Chung H. Lam , Dennis M. Newns
IPC分类号： H01L47/00 , G11C11/00
CPC分类号： G11C17/165 , G11C13/0004 , G11C13/0069 , G11C17/16 , G11C2013/0078 , G11C2013/008 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： Structures including a phase change material are disclosed. The structure may include a first electrode; a second electrode; a phase change material electrically connecting the first electrode and the second electrode for passing a current therethrough; and a tantalum nitride heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM).
摘要翻译：公开了包括相变材料的结构。该结构可以包括第一电极; 第二电极; 电连接第一电极和第二电极以使电流通过的相变材料; 以及围绕所述相变材料的氮化钽加热器层，用于通过向所述相变材料施加第二电流来将所述相变材料转换成非晶态绝缘状态和结晶导电状态。该结构可以用作保险丝或相变材料随机存取存储器（PRAM）。

25. 发明授权

US07750335B2 Phase change material structure and related method 有权
标题翻译：相变材料结构及相关方法
公开(公告)号：US07750335B2
公开(公告)日：2010-07-06
申请号：US11839724
申请日：2007-08-16
申请人： Lawrence A. Clevenger , Bruce G. Elmegreen , Deok-Kee Kim , Chandrasekharan Kothandaraman , Lia Krusin-Elbaum , Chung H. Lam , Dennis M. Newns
发明人： Lawrence A. Clevenger , Bruce G. Elmegreen , Deok-Kee Kim , Chandrasekharan Kothandaraman , Lia Krusin-Elbaum , Chung H. Lam , Dennis M. Newns
IPC分类号： H01L47/00
CPC分类号： H01L45/1683 , G11C13/0004 , G11C17/16 , G11C17/165 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/126 , H01L45/144 , H01L45/148
摘要： A structure including a phase change material and a related method are disclosed. The structure may include a first electrode; a second electrode; a third electrode; a phase change material electrically connecting the first, second and third electrodes for passing a first current through two of the first, second and third electrodes; and a refractory metal barrier heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM).
摘要翻译：公开了包括相变材料和相关方法的结构。该结构可以包括第一电极; 第二电极; 第三电极; 相变材料，电连接第一，第二和第三电极，用于使第一电流通过第一，第二和第三电极中的两个; 以及围绕所述相变材料的难熔金属阻挡加热器层，用于通过向相变材料施加第二电流来在非晶态绝缘状态和结晶导电状态之间转换相变材料。该结构可以用作保险丝或相变材料随机存取存储器（PRAM）。

26. 发明申请

US20090045388A1 PHASE CHANGE MATERIAL STRUCTURE AND RELATED METHOD 有权
标题翻译：相变材料结构及相关方法
公开(公告)号：US20090045388A1
公开(公告)日：2009-02-19
申请号：US11839724
申请日：2007-08-16
申请人： Lawrence A. Clevenger , Bruce G. Elmegreen , Deok-Kee Kim , Chandrasekharan Kothandaraman , Lia Krusin-Elbaum , Chung H. Lam , Dennis M. Newns
发明人： Lawrence A. Clevenger , Bruce G. Elmegreen , Deok-Kee Kim , Chandrasekharan Kothandaraman , Lia Krusin-Elbaum , Chung H. Lam , Dennis M. Newns
IPC分类号： H01L45/00
CPC分类号： H01L45/1683 , G11C13/0004 , G11C17/16 , G11C17/165 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/126 , H01L45/144 , H01L45/148
摘要： A structure including a phase change material and a related method are disclosed. The structure may include a first electrode; a second electrode; a third electrode; a phase change material electrically connecting the first, second and third electrodes for passing a first current through two of the first, second and third electrodes; and a refractory metal barrier heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM).
摘要翻译：公开了包括相变材料和相关方法的结构。该结构可以包括第一电极; 第二电极; 第三电极; 相变材料，电连接第一，第二和第三电极，用于使第一电流通过第一，第二和第三电极中的两个; 以及围绕所述相变材料的难熔金属阻挡加热器层，用于通过向相变材料施加第二电流来在非晶态绝缘状态和结晶导电状态之间转换相变材料。该结构可以用作保险丝或相变材料随机存取存储器（PRAM）。

27. 发明授权

US07545667B2 Programmable via structure for three dimensional integration technology 有权
标题翻译：可编程通孔结构，用于三维集成技术
公开(公告)号：US07545667B2
公开(公告)日：2009-06-09
申请号：US11393270
申请日：2006-03-30
申请人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Dennis M. Newns , Matthew R. Wordeman , Albert M. Young
发明人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Dennis M. Newns , Matthew R. Wordeman , Albert M. Young
IPC分类号： G11C11/00
CPC分类号： H01L45/144 , H01L23/5226 , H01L23/5252 , H01L23/5256 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1226 , H01L45/1286 , H01L2924/0002 , H01L2924/00
摘要： A programmable link structure for use in three dimensional integration (3DI) semiconductor devices includes a via filled at least in part with a phase change material (PCM) and a heating device proximate the PCM. The heating device is configured to switch the conductivity of a transformable portion of the PCM between a lower resistance crystalline state and a higher resistance amorphous state. Thereby, the via defines a programmable link between an input connection located at one end thereof and an output connection located at another end thereof.
摘要翻译：用于三维积分（3DI）半导体器件的可编程链路结构包括至少部分地填充有相变材料（PCM）和靠近PCM的加热装置的通孔。加热装置被配置为将PCM的可变形部分的电导率切换到较低电阻结晶状态和较高电阻无定形状态。因此，通路限定位于其一端的输入连接与位于其另一端的输出连接之间的可编程连接。

28. 发明授权

US07732798B2 Programmable via structure for three dimensional integration technology 有权
标题翻译：可编程通孔结构，用于三维集成技术
公开(公告)号：US07732798B2
公开(公告)日：2010-06-08
申请号：US12178921
申请日：2008-07-24
申请人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Dennis M. Newns , Matthew R. Wordeman , Albert M. Young
发明人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Dennis M. Newns , Matthew R. Wordeman , Albert M. Young
IPC分类号： H01L47/00
CPC分类号： H01L45/144 , H01L23/5226 , H01L23/5252 , H01L23/5256 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1226 , H01L45/1286 , H01L2924/0002 , H01L2924/00
摘要： A programmable link structure for use in three dimensional integration (3DI) semiconductor devices includes a via filled at least in part with a phase change material (PCM) and a heating device proximate the PCM. The heating device is configured to switch the conductivity of a transformable portion of the PCM between a lower resistance crystalline state and a higher resistance amorphous state. Thereby, the via defines a programmable link between an input connection located at one end thereof and an output connection located at another end thereof.
摘要翻译：用于三维积分（3DI）半导体器件的可编程链路结构包括至少部分地填充有相变材料（PCM）和靠近PCM的加热装置的通孔。加热装置被配置为将PCM的可变形部分的电导率切换到较低电阻结晶状态和较高电阻无定形状态。因此，通路限定位于其一端的输入连接与位于其另一端的输出连接之间的可编程连接。

29. 发明申请

US20090072213A1 Programmable Via Structure for Three Dimensional Integration Technology 有权
标题翻译：可编程通道结构三维集成技术
公开(公告)号：US20090072213A1
公开(公告)日：2009-03-19
申请号：US12178921
申请日：2008-07-24
申请人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Dennis M. Newns , Matthew R. Wordeman , Albert M. Young
发明人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Chung Hon Lam , Dennis M. Newns , Matthew R. Wordeman , Albert M. Young
IPC分类号： H01L47/00
CPC分类号： H01L45/144 , H01L23/5226 , H01L23/5252 , H01L23/5256 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1226 , H01L45/1286 , H01L2924/0002 , H01L2924/00
摘要： A programmable link structure for use in three dimensional integration (3DI) semiconductor devices includes a via filled at least in part with a phase change material (PCM) and a heating device proximate the PCM. The heating device is configured to switch the conductivity of a transformable portion of the PCM between a lower resistance crystalline state and a higher resistance amorphous state. Thereby, the via defines a programmable link between an input connection located at one end thereof and an output connection located at another end thereof
摘要翻译：用于三维积分（3DI）半导体器件的可编程链路结构包括至少部分地填充有相变材料（PCM）和靠近PCM的加热装置的通孔。加热装置被配置为将PCM的可变形部分的电导率切换到较低电阻结晶状态和较高电阻无定形状态。因此，通路限定位于其一端的输入连接与位于其另一端的输出连接之间的可编程连接

30. 发明授权

US08466444B2 Three-terminal cascade switch for controlling static power consumption in integrated circuits 有权
标题翻译：用于控制集成电路静态功耗的三端子级联开关
公开(公告)号：US08466444B2
公开(公告)日：2013-06-18
申请号：US13406096
申请日：2012-02-27
申请人： Lia Krusin-Elbaum , Dennis M. Newns , Matthew R. Wordeman
发明人： Lia Krusin-Elbaum , Dennis M. Newns , Matthew R. Wordeman
IPC分类号： H01L47/00
CPC分类号： H01L45/1226 , H01L27/24 , H01L45/06 , H01L45/1206 , H01L45/1233 , H01L45/1286 , H01L45/144 , H01L45/148
摘要： A switching circuit includes a plurality of three-terminal PCM switching devices connected between a voltage supply terminal and a sub-block of logic. Each of the switching devices includes a PCM disposed in contact between a first terminal and a second terminal, a heating device disposed in contact between the second terminal and a third terminal, the heating device positioned proximate the PCM, and configured to switch the conductivity of a transformable portion of the PCM between a lower resistance state and a higher resistance state; and an insulating layer configured to electrically isolate the heater from said PCM material, and the heater from the first terminal. The third terminal of a first of the PCM switching devices is coupled to a set/reset switch, and the third terminal of the remaining PCM switching devices is coupled to the second terminal of an adjacent PCM switching device in a cascade configuration.
摘要翻译：开关电路包括连接在电压供给端子和逻辑子块之间的多个三端子PCM开关装置。每个开关装置包括设置在第一端子和第二端子之间接触的PCM，加热装置，其设置成接触在第二端子和第三端子之间，加热装置位于PCM附近，并且被配置为切换 PCM的可变形部分在较低电阻状态和较高电阻状态之间; 以及绝缘层，其被配置为将加热器与所述PCM材料电隔离，并且所述加热器与所述第一端子电隔离。第一个PCM开关器件的第三端子耦合到一个置位/复位开关，其余的PCM开关器件的第三个端子以级联配置耦合到一个相邻的PCM开关器件的第二个端子。

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