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21. 发明申请

US20050230728A1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050230728A1
公开(公告)日：2005-10-20
申请号：US11107890
申请日：2005-04-18
申请人： Katsuaki Natori , Soichi Yamazaki , Koji Yamakawa , Hiroyuki Kanaya
发明人： Katsuaki Natori , Soichi Yamazaki , Koji Yamakawa , Hiroyuki Kanaya
IPC分类号： H01L27/105 , H01L21/02 , H01L21/8246 , H01L23/522 , H01L27/115 , H01L31/113
CPC分类号： H01L27/11502 , H01L23/5223 , H01L27/11507 , H01L28/57 , H01L28/65 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device according to an aspect of the present invention comprises a semiconductor substrate, a ferroelectric capacitor, a protective film and an auxiliary capacitor. The ferroelectric capacitor is provided above the semiconductor substrate and comprises an upper electrode, a lower electrode and a ferroelectric film interposed between the upper and lower electrodes. The protective film is formed, covering the ferroelectric capacitor. The auxiliary capacitor is provided in a circuit section peripheral to the ferroelectric capacitor and uses the protective film as capacitor insulating film.
摘要翻译：根据本发明的一个方面的半导体器件包括半导体衬底，铁电电容器，保护膜和辅助电容器。铁电电容器设置在半导体衬底上方，并且包括插入在上电极和下电极之间的上电极，下电极和铁电体膜。形成保护膜，覆盖铁电电容器。辅助电容器设置在铁电电容器外围的电路部分中，并且使用保护膜作为电容器绝缘膜。

22. 发明申请

US20050181559A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050181559A1
公开(公告)日：2005-08-18
申请号：US10878051
申请日：2004-06-29
申请人： Katsuaki Natori , Koji Yamakawa , Hiroyuki Kanaya
发明人： Katsuaki Natori , Koji Yamakawa , Hiroyuki Kanaya
IPC分类号： H01L21/28 , H01L21/02 , H01L21/20 , H01L21/326 , H01L21/336 , H01L21/479 , H01L21/822 , H01L21/8234 , H01L21/8242 , H01L21/8244 , H01L21/8246 , H01L27/04 , H01L27/105 , H01L27/115
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57
摘要： Disclosed is a method of manufacturing a semiconductor device, comprising forming a bottom electrode film of a capacitor above a semiconductor substrate, forming a dielectric film of the capacitor on the bottom electrode film, forming a top electrode film of the capacitor on the dielectric film, and forming a hydrogen barrier film after forming the top electrode film, the hydrogen barrier film preventing hydrogen from diffusing into the dielectric film, wherein forming the hydrogen barrier film includes forming an oxide film containing silicon and nitriding the oxide film.
摘要翻译：公开了一种制造半导体器件的方法，包括在半导体衬底上形成电容器的底部电极膜，在底部电极膜上形成电容器的电介质膜，在电介质膜上形成电容器的顶部电极膜，在形成顶电极膜之后形成氢阻挡膜，防止氢扩散到电介质膜中的氢阻挡膜，其中形成氢阻挡膜包括形成含硅氧化膜并氮化氧化膜。

23. 发明授权

US06924521B2 Semiconductor device comprising a capacitor using a ferroelectric material 失效
标题翻译：包括使用铁电材料的电容器的半导体器件
公开(公告)号：US06924521B2
公开(公告)日：2005-08-02
申请号：US10760499
申请日：2004-01-21
申请人： Osamu Arisumi , Keitaro Imai , Koji Yamakawa , Bum-ki Moon
发明人： Osamu Arisumi , Keitaro Imai , Koji Yamakawa , Bum-ki Moon
IPC分类号： H01L21/02 , H01L31/119 , H01L29/00
CPC分类号： H01L28/56 , H01L28/55
摘要： A semiconductor device comprises a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode and made of a perovskite type ferroelectrics containing Pb, Zr, Ti and O, the dielectric film comprising a first portion formed of a plurality of crystal grains partitioned by grain boundaries having a plurality of directions.
摘要翻译：半导体器件包括底电极，顶电极和设置在底电极和顶电极之间并由包含Pb，Zr，Ti和O的钙钛矿型铁电体制成的电介质膜，该电介质膜包括由第一部分形成的第一部分由具有多个方向的晶界划分的多个晶粒。

24. 发明申请

US20050110062A1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050110062A1
公开(公告)日：2005-05-26
申请号：US10954183
申请日：2004-10-01
申请人： Katsuaki Natori , Koji Yamakawa , Hiroyuki Kanaya
发明人： Katsuaki Natori , Koji Yamakawa , Hiroyuki Kanaya
IPC分类号： H01L29/41 , H01L21/02 , H01L21/768 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L29/76
CPC分类号： H01L28/65 , H01L21/7687 , H01L27/10814 , H01L27/10855 , H01L28/55
摘要： A semiconductor device comprises a semiconductor substrate including a diffusion area, a capacitor provided above the semiconductor substrate and including a lower electrode, a dielectric film, and an upper electrode, a plug provided between the semiconductor substrate and the capacitor and having a lower end connected to the diffusion area and an upper end connected to the lower electrode, and a dummy plug provided between the semiconductor substrate and the capacitor and having a lower end not connected to the diffusion area and an upper end connected to the lower electrode.
摘要翻译：一种半导体器件包括：包括扩散区域的半导体衬底，设置在半导体衬底上方并包括下电极，电介质膜和上电极的电容器，设置在半导体衬底和电容器之间并具有下端连接的插头扩散区域和连接到下电极的上端，以及设置在半导体衬底和电容器之间并具有未连接到扩散区域的下端和连接到下电极的上端的虚拟插头。

25. 发明授权

US06586793B2 Ferroelectric memory and manufacturing method thereof 有权
标题翻译：铁电存储器
公开(公告)号：US06586793B2
公开(公告)日：2003-07-01
申请号：US09984518
申请日：2001-10-30
申请人： Keitaro Imai , Koji Yamakawa
发明人： Keitaro Imai , Koji Yamakawa
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/91
摘要： A ferroelectric memory includes first and second plugs respectively connected to one and the other of source/drain regions of the transistor formed on a semiconductor wafer. A first capacitor electrode is connected to the first plug and located at a position above the transistor. The first capacitor electrode includes first and second capacitor faces on the second plug side and a side reverse thereto, respectively. A ferroelectric film is disposed on the first capacitor face. A second capacitor electrode is connected to the second plug and located at a position above the transistor. The second capacitor electrode is disposed on the first capacitor face through the ferroelectric film.
摘要翻译：铁电存储器包括分别连接到形成在半导体晶片上的晶体管的源极/漏极区域中的一个和另一个的第一和第二插头。第一电容器电极连接到第一插头并且位于晶体管上方的位置处。第一电容器电极包括分别在第二插头侧的第一和第二电容器面和与其相反的一侧。铁电体膜设置在第一电容器面上。第二电容器电极连接到第二插头并且位于晶体管上方的位置。第二电容器电极通过铁电体膜设置在第一电容器面上。

26. 发明授权

US06377358B1 Method for correcting a recording head, correction apparatus therefor, recording head corrected by use of such apparatus, and recording apparatus using such recording head 失效
标题翻译：用于校正记录头的方法，其校正装置，使用这种装置校正的记录头以及使用这种记录头的记录装置
公开(公告)号：US06377358B1
公开(公告)日：2002-04-23
申请号：US09219896
申请日：1998-12-24
申请人： Kimiyuki Hayasaki , Koji Yamakawa , Tsuyoshi Orikasa , Hiroyuki Kigami , Hisashi Fukai , Takayuki Ono , Masayoshi Okawa , Satoshi Kudo
发明人： Kimiyuki Hayasaki , Koji Yamakawa , Tsuyoshi Orikasa , Hiroyuki Kigami , Hisashi Fukai , Takayuki Ono , Masayoshi Okawa , Satoshi Kudo
IPC分类号： B41B1500
CPC分类号： B41J2/04508 , B41J2/04536 , B41J2/04563 , B41J2/04565 , B41J2/0458 , B41J2/04588 , B41J2/04591 , B41J2/04598 , B41J29/393 , B41J2202/21
摘要： A method for correcting a recording head is provided to solve the problems of density unevenness in recorded images. The density comparison is made with the reference density for a predetermined unit in the density distribution of an image recorded by the application of n kinds of signals. Then, one of the n kinds of signals which is close to the reference density is selected. The properties of the signal thus selected are transmitted to the recording head together with the correction data, hence correcting density unevenness.
摘要翻译：提供了一种用于校正记录头的方法，以解决记录图像中的浓度不均匀性的问题。通过应用n种信号记录的图像的浓度分布中的预定单位的参考密度进行密度比较。然后，选择接近参考密度的n种信号之一。所选择的信号的属性与校正数据一起发送到记录头，从而校正浓度不均匀性。

27. 发明授权

US06349239B2 Method for manufacturing a liquid jet recording head 失效
标题翻译：液体喷射记录头的制造方法
公开(公告)号：US06349239B2
公开(公告)日：2002-02-19
申请号：US09041013
申请日：1998-03-12
申请人： Tsuyoshi Orikasa , Koji Yamakawa , Hiroyuki Kigami , Kimiyuki Hayasaki , Hisashi Fukai , Takayuki Ono , Masayoshi Ohkawa
发明人： Tsuyoshi Orikasa , Koji Yamakawa , Hiroyuki Kigami , Kimiyuki Hayasaki , Hisashi Fukai , Takayuki Ono , Masayoshi Ohkawa
IPC分类号： G06F1900
CPC分类号： B41J2/14024
摘要： A method for manufacturing a liquid jet recording head comprises of the steps of calculating the difference between the distance B from the first heater on the element substrate to the cut face of the element substrate and the distance A from the first flow path groove on the ceiling plate to the abutment reference of the ceiling plate, measuring the amounts of deviation in the positional precisions in the state where the element substrates and the ceiling plates are actually positioned, working out a correction value from the distributional condition of such deviations, feeding back the correction value for determining the corrected amount of retraction. Then, after the abutment reference of the ceiling plate is allowed to abut upon the cut face of the element substrate by means of a push jig, retraction is performed by moving the ceiling plate by means of a retraction jig in the reverse direction with respect to the element substrate, hence positioning the ceiling plate and the element substrate. With the method thus arranged, it is made possible to perform positioning in a higher precision at lower costs with a shorter tact time, thus manufacturing a highly precise and highly reliable liquid jet recording head.
摘要翻译：液体喷射记录头的制造方法包括以下步骤：计算元件基板上的第一加热器与元件基板的切割面的距离B与元件基板的切割面的距离A与天花板上的第一流路槽的距离A之差测量顶板的对接基准，测量元件基板和顶板实际定位状态下位置精度的偏差量，根据这种偏差的分布条件制定校正值，反馈用于确定校正后的回缩量的校正值。然后，借助于推动夹具使顶板的抵接基准与元件基板的切割面抵接后，通过相对于背板的相反方向的退避夹具移动顶板来进行缩回元件基板，因此定位顶板和元件基板。利用如此布置的方法，可以以更短的节拍时间以更低的成本以更高的精度执行定位，从而制造高精度和高可靠性的液体喷射记录头。

28. 发明授权

US06170939B2 Liquid storing container for recording apparatus 失效
标题翻译：用于记录装置的液体储存容器
公开(公告)号：US06170939B2
公开(公告)日：2001-01-09
申请号：US08690345
申请日：1996-07-26
申请人： Toshihiko Ujita , Koji Yamakawa , Masanori Takenouchi , Sadayuki Sugama , Kenjiro Watanabe , Torachika Osada , Kazuhiro Nakajima , Takayoshi Tsutsumi , Hidemi Kubota , Yasuo Kotaki , Keiichiro Tsukuda , Yohei Sato
发明人： Toshihiko Ujita , Koji Yamakawa , Masanori Takenouchi , Sadayuki Sugama , Kenjiro Watanabe , Torachika Osada , Kazuhiro Nakajima , Takayoshi Tsutsumi , Hidemi Kubota , Yasuo Kotaki , Keiichiro Tsukuda , Yohei Sato
IPC分类号： B41J2175
CPC分类号： B41J2/17553 , B41J2/17513 , B41J2/1752 , B41J2/17523 , B41J2/17563
摘要： A liquid storing container employable for an ink jet recording apparatus includes a housing, a storing area containing a porous ink absorbing member, a valve mechanism, a filter in contact with the porous member, and a stopper. The liquid storing container is detachably connected to an ink jet recording head, where the valve mechanism allows an outflow of ink to the ink jet head through the joint portion when connected to an ink feed pipe, and closes the joint portion when disconnected from the ink feed pipe.
摘要翻译：可用于喷墨记录装置的液体储存容器包括壳体，包含多孔吸墨件的储存区域，阀机构，与多孔构件接触的过滤器和止动件。液体储存容器可拆卸地连接到喷墨记录头，其中阀机构允许当连接到供墨管时通过接合部分将油墨流出到喷墨头，并且当与油墨断开时关闭接合部分进料管。

30. 发明授权

US07573120B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07573120B2
公开(公告)日：2009-08-11
申请号：US11170316
申请日：2005-06-30
申请人： Katsuaki Natori , Hiroyuki Kanaya , Koji Yamakawa
发明人： Katsuaki Natori , Hiroyuki Kanaya , Koji Yamakawa
IPC分类号： H01L29/93
CPC分类号： H01L27/11507 , G11C11/22 , H01L21/02164 , H01L21/02178 , H01L21/02197 , H01L21/022 , H01L21/02266 , H01L21/02271 , H01L21/0228 , H01L21/02356 , H01L21/3141 , H01L21/31616 , H01L21/31691 , H01L27/11502 , H01L28/55 , H01L28/65
摘要： According to an aspect of the present invention, there is provided a semiconductor device comprising a semiconductor substrate, a capacitor which is disposed above the semiconductor substrate and in which a dielectric film is held between lower and upper electrodes, an oxide film formed in such a manner as to coat the capacitor and having a thickness of 5 nm or more and 50 nm or less, and a protective film formed on the oxide film by an ALD process.
摘要翻译：根据本发明的一个方面，提供了一种半导体器件，包括半导体衬底，电容器，其设置在半导体衬底上方，并且电介质膜保持在下电极和上电极之间，形成在这种作为涂敷电容器的厚度为5nm以上且50nm以下的方式，以及通过ALD工艺在氧化物膜上形成的保护膜。

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