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    • 24. 发明授权
    • Test apparatus and recording medium
    • 测试仪器和记录介质
    • US08407522B2
    • 2013-03-26
    • US12487644
    • 2009-06-18
    • Koji Takahashi
    • Koji Takahashi
    • G06F11/00
    • G01R31/31907G01R31/31716G01R31/31901
    • Provided is a test apparatus that tests a device under test, comprising a plurality of test modules that test the device under test; and a control section that controls the plurality of test modules. Each test module includes a test section that tests the device under test; and a self-diagnostic section that diagnoses operation of the test section based on diagnostic data supplied thereto. The control section supplies the diagnostic data in parallel to self-diagnostic sections for which the same type of diagnostic data is set, and supplies the diagnostic data sequentially to self-diagnostic sections for which a different type of diagnostic data is set.
    • 提供了一种测试被测设备的测试设备,包括测试被测设备的多个测试模块; 以及控制部,其控制所述多个测试模块。 每个测试模块包括测试被测设备的测试部分; 以及自诊断部,其基于提供给其的诊断数据来诊断测试部的操作。 控制部分将诊断数据并行提供给与其设置相同类型的诊断数据的自诊断部分,并且将诊断数据顺序地提供给设置了不同类型的诊断数据的自诊断部分。
    • 30. 发明授权
    • Semiconductor integrated circuit device and method of producing the same
    • 半导体集成电路装置及其制造方法
    • US08058131B2
    • 2011-11-15
    • US12949046
    • 2010-11-18
    • Hiroshi HashimotoKoji Takahashi
    • Hiroshi HashimotoKoji Takahashi
    • H01L21/336
    • H01L27/105H01L27/11521H01L27/11526H01L27/11546H01L27/11558H01L29/7883
    • A semiconductor integrated circuit device includes a substrate, a nonvolatile memory device formed in a memory cell region of the substrate, and a semiconductor device formed in a device region of the substrate. The nonvolatile memory device has a multilayer gate electrode structure including a tunnel insulating film and a floating gate electrode formed thereon. The floating gate electrode has sidewall surfaces covered with a protection insulating film. The semiconductor device has a gate insulating film and a gate electrode formed thereon. A bird's beak structure is formed of a thermal oxide film at an interface of the tunnel insulating film and the floating gate electrode, the bird's beak structure penetrating into the floating gate electrode along the interface from the sidewall faces of the floating gate electrode, and the gate insulating film is interposed between the substrate and the gate electrode to have a substantially uniform thickness.
    • 半导体集成电路器件包括衬底,形成在衬底的存储单元区域中的非易失性存储器件以及形成在衬底的器件区域中的半导体器件。 非易失性存储器件具有包括形成在其上的隧道绝缘膜和浮栅电极的多层栅电极结构。 浮栅电极具有用保护绝缘膜覆盖的侧壁表面。 半导体器件具有形成在其上的栅极绝缘膜和栅电极。 鸟喙结构由隧道绝缘膜和浮栅电极的界面处的热氧化膜形成,鸟喙结构沿着与浮栅电极的侧壁面的界面贯穿浮置栅电极,并且 栅极绝缘膜插入在基板和栅电极之间以具有基本均匀的厚度。