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21. 发明授权

US09310698B2 Method and apparatus for controlling a lithographic apparatus 有权
标题翻译：用于控制光刻设备的方法和设备
公开(公告)号：US09310698B2
公开(公告)日：2016-04-12
申请号：US13012386
申请日：2011-01-24
申请人： Boris Menchtchikov , Alexander Viktorovych Padiy
发明人： Boris Menchtchikov , Alexander Viktorovych Padiy
IPC分类号： G03F7/20
CPC分类号： G03F7/70633 , G03F7/705 , G03F7/70516 , G03F7/70525
摘要： A lithographic exposure process is performed on a substrate using a scanner. The scanner comprises several subsystems. There are errors in the overlay arising from the subsystems during the exposure. The overlay errors are measured using a scatterometer to obtain overlay measurements. Modeling is performed to separately determine from the overlay measurements different subsets of estimated model parameters, for example field distortion model parameters, scan/step direction model parameters and position/deformation model parameters. Each subset is related to overlay errors arising from a corresponding specific subsystem of the lithographic apparatus. Finally, the exposure is controlled in the scanner by controlling a specific subsystem of the scanner using its corresponding subset of estimated model parameters. This results in a product wafer being exposed with a well controlled overlay.
摘要翻译：使用扫描仪在基板上进行光刻曝光处理。扫描仪包括几个子系统。暴露过程中子系统产生的覆盖错误。使用散射仪测量覆盖误差以获得覆盖测量。执行建模以从覆盖测量单独确定估计模型参数的不同子集，例如场失真模型参数，扫描/步进方向模型参数和位置/变形模型参数。每个子集与由光刻设备的相应特定子系统产生的叠加误差有关。最后，通过使用其对应的估计模型参数子集来控制扫描仪的特定子系统，在扫描仪中控制曝光。这导致用良好控制的覆盖物暴露产品晶片。

22. 发明授权

US09134625B2 Lithographic apparatus and device manufacturing method for measuring wafer parameters using non-standard alignment settings 有权
标题翻译：用于使用非标准对准设置测量晶片参数的平版印刷设备和器件制造方法
公开(公告)号：US09134625B2
公开(公告)日：2015-09-15
申请号：US13010388
申请日：2011-01-20
申请人： Alexander Viktorovych Padiy , Boris Menchtchikov
发明人： Alexander Viktorovych Padiy , Boris Menchtchikov
IPC分类号： G03B27/32 , G03F7/20 , G03F9/00
CPC分类号： G03F7/70616 , G03F7/70516 , G03F9/7011 , G03F9/7019
摘要： A method produces at least one monitor wafer for a lithographic apparatus. The monitor wafer is for use in combination with a scanning control module to periodically retrieve measurements defining a baseline from the monitor wafer thereby determining parameter drift from the baseline. In doing this, allowance and/or correction can be to be made for the drift. The baseline is determined by initially exposing the monitor wafer(s) using the lithographic apparatus, such that the initial exposure is performed while using non-standard alignment model settings optimized for accuracy, such as those used for testing the apparatus. An associated lithographic apparatus is also disclosed.
摘要翻译：一种方法产生用于光刻设备的至少一个监视晶片。监视器晶片与扫描控制模块组合使用，以周期性地从监视器晶片检索定义基线的测量结果，从而确定基线的参数漂移。在这样做时，可以对漂移进行津贴和/或修正。通过使用光刻设备初始曝光监视器晶片来确定基线，使得在使用针对精度优化的非标准对准模型设置（例如用于测试设备的那些）时执行初始曝光。还公开了相关的光刻设备。

23. 发明申请

US20110216294A1 Lithographic Apparatus, Device Manufacturing Method and Associated Data Processing Apparatus and Computer Program Product 有权
标题翻译：平版印刷设备，设备制造方法及相关数据处理设备及计算机程序产品
公开(公告)号：US20110216294A1
公开(公告)日：2011-09-08
申请号：US13009250
申请日：2011-01-19
申请人： Boris Menchtchikov , Alexander Viktorovych Padiy
发明人： Boris Menchtchikov , Alexander Viktorovych Padiy
IPC分类号： G03B27/42
CPC分类号： G03F7/70258 , G03F7/70616
摘要： A lithographic apparatus operates by moving a substrate and a patterning device relative to each other in a sequence of movements such that a pattern is applied at a successive portions on the substrate. Each portion of the substrate is patterned by a scanning operation in which the patterning device is scanned through the radiation beam while synchronously scanning the substrate through the patterned radiation beam so as to apply the pattern to the desired portion on the substrate. An intrafield correction is applied during each scanning operation so as to compensate for distortion effects which vary during the scanning operation. The intrafield correction includes corrective variations of one or more properties of the projection system, and optionally out-of-plane movements of the patterning device and/or substrate table.
摘要翻译：平版印刷设备通过以一系列运动相对于彼此移动基板和图案形成装置来操作，使得在基板上的连续部分施加图案。通过扫描操作来对衬底的每个部分进行构图，其中图案形成装置通过辐射束扫描，同时通过图案化的辐射束同步扫描衬底，以将图案施加到衬底上的期望部分。在每次扫描操作期间，进行场内校正，以补偿在扫描操作期间变化的失真效应。场内校正包括投影系统的一个或多个特性的校正变化，以及图案形成装置和/或衬底台的任意的平面外运动。

24. 发明申请

US20110216293A1 Lithographic Apparatus and Device Manufacturing Method 有权
标题翻译：光刻设备和器件制造方法
公开(公告)号：US20110216293A1
公开(公告)日：2011-09-08
申请号：US13009232
申请日：2011-01-19
申请人： Alexander Viktorovych Padiy , Boris Menchtchikov
发明人： Alexander Viktorovych Padiy , Boris Menchtchikov
IPC分类号： G03F7/20 , G03B27/68
CPC分类号： G03F7/70616 , G03F7/70516 , G03F7/70525 , G03F9/7003 , G03F9/7011 , G03F9/7019 , G03F9/7046
摘要： A method controls a scanning function of a lithographic apparatus. A first alignment strategy is used. A monitor wafer is exposed to determine baseline control parameters pertaining to the scanning function. The baseline control parameters are periodically retrieved from the monitor wafer. Parameter drift is determined from the baseline control parameters. Corrective action is taken based on the determination. A production wafer is exposed using a second alignment strategy, different to the first alignment strategy. The corrective action is modified so as to be substantially closer to the correction that would have been made had the second alignment strategy been used in exposing the monitor wafer.
摘要翻译：方法控制光刻设备的扫描功能。使用第一对齐策略。暴露监视器晶片以确定与扫描功能有关的基线控制参数。从监视器晶片周期性地检索基线控制参数。参数漂移由基线控制参数决定。根据确定采取纠正措施。使用与第一对准策略不同的第二对准策略来曝光生产晶片。校正动作被修改，以便基本上更接近如果在暴露监视器晶片时已经使用第二对准策略将会进行的校正。

25. 发明授权

US07595496B2 Optimized correction of wafer thermal deformations in a lithographic process 失效
标题翻译：光刻过程中晶片热变形的优化校正
公开(公告)号：US07595496B2
公开(公告)日：2009-09-29
申请号：US11812801
申请日：2007-06-21
申请人： Joost Jeroen Ottens , Harmen Klaas Van Der Schoot , Jeroen Pieter Starreveld , Wouterus Johannes Petrus Maria Maas , Willem Jurrianus Venema , Boris Menchtchikov
发明人： Joost Jeroen Ottens , Harmen Klaas Van Der Schoot , Jeroen Pieter Starreveld , Wouterus Johannes Petrus Maria Maas , Willem Jurrianus Venema , Boris Menchtchikov
IPC分类号： G21K5/00
CPC分类号： G03F7/70616 , G03F7/70783 , G03F7/70875
摘要： A method and apparatus of correcting thermally-induced field deformations of a lithographically exposed substrate, is presented herein. In one embodiment, the method includes exposing a pattern onto a plurality of fields of a substrate in accordance with pre-specified exposure information and measuring attributes of the fields to assess deformation of the fields induced by thermal effects of the exposing process. The method further includes determining corrective information based on the measured attributes, and adjusting the pre-specified exposure information, based on the corrective information, to compensate for the thermally-induced field deformations. Other embodiments include the use of predictive models to predict thermally-induced effects on the fields and thermographic imaging to determine temperature variations across a substrate.
摘要翻译：本文介绍了一种校正光刻曝光的基底的热诱导场变形的方法和装置。在一个实施例中，该方法包括根据预先指定的曝光信息将图案曝光到基板的多个场上，并测量场的属性以评估由曝光过程的热效应引起的场的变形。该方法还包括基于所测量的属性来确定校正信息，并且基于校正信息调整预定曝光信息，以补偿热诱导的场变形。其他实施例包括使用预测模型来预测对场的热诱导效应和热成像以确定跨越衬底的温度变化。

26. 发明授权

US08717536B2 Lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product 有权
标题翻译：光刻设备，设备制造方法及相关数据处理设备及计算机程序产品
公开(公告)号：US08717536B2
公开(公告)日：2014-05-06
申请号：US13009250
申请日：2011-01-19
申请人： Boris Menchtchikov , Alexander Viktorovych Padiy
发明人： Boris Menchtchikov , Alexander Viktorovych Padiy
IPC分类号： G03B27/42 , G03B27/54 , G03B27/52 , G03F7/20
CPC分类号： G03F7/70258 , G03F7/70616
摘要： A lithographic apparatus operates by moving a substrate and a patterning device relative to each other in a sequence of movements such that a pattern is applied at a successive portions on the substrate. Each portion of the substrate is patterned by a scanning operation in which the patterning device is scanned through the radiation beam while synchronously scanning the substrate through the patterned radiation beam so as to apply the pattern to the desired portion on the substrate. An intrafield correction is applied during each scanning operation so as to compensate for distortion effects which vary during the scanning operation. The intrafield correction includes corrective variations of one or more properties of the projection system, and optionally out-of-plane movements of the patterning device and/or substrate table.
摘要翻译：平版印刷设备通过以一系列运动相对于彼此移动基板和图案形成装置来操作，使得在基板上的连续部分施加图案。通过扫描操作来对衬底的每个部分进行构图，其中图案形成装置通过辐射束扫描，同时通过图案化的辐射束同步扫描衬底，以将图案施加到衬底上的期望部分。在每次扫描操作期间，进行场内校正，以补偿在扫描操作期间变化的失真效应。场内校正包括投影系统的一个或多个特性的校正变化，以及图案形成装置和/或衬底台的任意的平面外运动。

27. 发明申请

US20110205520A1 Lithographic Apparatus and Device Manufacturing Method 有权
标题翻译：光刻设备和器件制造方法
公开(公告)号：US20110205520A1
公开(公告)日：2011-08-25
申请号：US13010409
申请日：2011-01-20
申请人： Alexander Viktorovych PADIY , Boris Menchtchikov
发明人： Alexander Viktorovych PADIY , Boris Menchtchikov
IPC分类号： G03B27/58
CPC分类号： G03F7/70516 , G03F7/70616
摘要： A method produces at least one monitor wafer for a lithographic apparatus. The monitor wafer is for use in combination with a scanning control module to periodically retrieve measurements defining a baseline from the monitor wafer, thereby determining parameter drift from the baseline. In doing this, allowance and/or correction can be to be made for the drift. The baseline is determined by initially exposing the monitor wafer(s) using the lithographic apparatus to perform multiple exposure passes on each of the monitor wafer(s). An associated lithographic apparatus is also disclosed.
摘要翻译：一种方法产生用于光刻设备的至少一个监视晶片。监视器晶片与扫描控制模块组合使用，以周期性地从监视器晶片检索限定基线的测量值，从而确定从基准线的参数漂移。在这样做时，可以对漂移进行津贴和/或修正。通过使用光刻设备最初暴露监视器晶片以在每个监视器晶片上执行多次曝光确定来确定基线。还公开了相关的光刻设备。

28. 发明申请

US20070257209A1 Optimized correction of water thermal deformations in a lithographic process 失效
标题翻译：光刻过程中水热变形的优化校正
公开(公告)号：US20070257209A1
公开(公告)日：2007-11-08
申请号：US11812801
申请日：2007-06-21
申请人： Joost Ottens , Harmen Schoot , Jeroen Starreveld , Wouterus Maria Maas , Willem Venema , Boris Menchtchikov
发明人： Joost Ottens , Harmen Schoot , Jeroen Starreveld , Wouterus Maria Maas , Willem Venema , Boris Menchtchikov
IPC分类号： G03B27/02
CPC分类号： G03F7/70616 , G03F7/70783 , G03F7/70875
摘要： A method and apparatus of correcting thermally-induced field deformations of a lithographically exposed substrate, is presented herein. In one embodiment, the method includes exposing a pattern onto a plurality of fields of a substrate in accordance with pre-specified exposure information and measuring attributes of the fields to assess deformation of the fields induced by thermal effects of the exposing process. The method further includes determining corrective information based on the measured attributes, and adjusting the pre-specified exposure information, based on the corrective information, to compensate for the thermally-induced field deformations. Other embodiments include the use of predictive models to predict thermally-induced effects on the fields and thermographic imaging to determine temperature variations across a substrate.
摘要翻译：本文介绍了一种校正光刻曝光的基底的热诱导场变形的方法和装置。在一个实施例中，该方法包括根据预先指定的曝光信息将图案曝光到基板的多个场上，并测量场的属性以评估由曝光过程的热效应引起的场的变形。该方法还包括基于所测量的属性来确定校正信息，并且基于校正信息调整预定曝光信息，以补偿热诱导的场变形。其他实施例包括使用预测模型来预测对场的热诱导效应和热成像以确定跨越衬底的温度变化。

29. 发明授权

US07250237B2 Optimized correction of wafer thermal deformations in a lithographic process 失效
标题翻译：光刻过程中晶片热变形的优化校正
公开(公告)号：US07250237B2
公开(公告)日：2007-07-31
申请号：US10743272
申请日：2003-12-23
申请人： Joost Jeroen Ottens , Harmen Klaas Van Der Schoot , Jeroen Pieter Starreveld , Wouterus Johannes Petrus Maria Maas , Willem Jurrianus Venema , Boris Menchtchikov
发明人： Joost Jeroen Ottens , Harmen Klaas Van Der Schoot , Jeroen Pieter Starreveld , Wouterus Johannes Petrus Maria Maas , Willem Jurrianus Venema , Boris Menchtchikov
IPC分类号： G03C5/00 , G03F9/00
CPC分类号： G03F7/70616 , G03F7/70783 , G03F7/70875
摘要： A method and apparatus of correcting thermally-induced field deformations of a lithographically exposed substrate, is presented herein. In one embodiment, the method includes exposing a pattern onto a plurality of fields of a substrate in accordance with pre-specified exposure information and measuring attributes of the fields to assess deformation of the fields induced by thermal effects of the exposing process. The method further includes determining corrective information based on the measured attributes, and adjusting the pre-specified exposure information, based on the corrective information, to compensate for the thermally-induced field deformations.Other embodiments include the use of predictive models to predict thermally-induced effects on the fields and thermographic imaging to determine temperature variations across a substrate.
摘要翻译：本文介绍了一种校正光刻曝光的基底的热诱导场变形的方法和装置。在一个实施例中，该方法包括根据预先指定的曝光信息将图案曝光到基板的多个场上，并测量场的属性以评估由曝光过程的热效应引起的场的变形。该方法还包括基于所测量的属性来确定校正信息，并且基于校正信息调整预定曝光信息，以补偿热诱导的场变形。其他实施例包括使用预测模型来预测对场的热诱导效应和热成像以确定跨越衬底的温度变化。

30. 发明授权

US09069240B2 Calibration of lithographic apparatus by exposing patterns on substrate positioned at different orientations 有权
标题翻译：通过在位于不同取向的基板上曝光图案来校准光刻设备
公开(公告)号：US09069240B2
公开(公告)日：2015-06-30
申请号：US13017640
申请日：2011-01-31
申请人： Boris Menchtchikov , Alexander Viktorovych Padiy
发明人： Boris Menchtchikov , Alexander Viktorovych Padiy
IPC分类号： G03B27/32 , G03B27/53 , G03F7/20
CPC分类号： G03B27/53 , G03F7/70516
摘要： A system and method for calibrating system parameters of a lithography apparatus is disclosed. The system includes a measurement device configured to measure an overlay error between patterns formed on a substrate during different exposures and a processing device configured to determine a model representative of a relationship between the overlay error and a system parameter error based on the measured overlay error. The method includes measuring an overlay error between patterns formed at different exposures with the substrate positioned at different orientations during each of the different exposures. The method further includes determining a model representative of a relationship between the overlay error and a system parameter error based on the measured overlay error and deriving a calibration correction factor from the model.
摘要翻译：公开了一种用于校准光刻设备的系统参数的系统和方法。该系统包括测量装置，该测量装置被配置为在不同曝光期间测量在衬底上形成的图案之间的重叠误差，以及配置成基于所测量的重叠误差来确定代表重叠误差与系统参数误差之间的关系的模型的处理装置。该方法包括测量在不同曝光期间形成的图案与在每个不同曝光期间以不同取向定位的基底的覆盖误差。该方法还包括基于所测量的重叠误差确定代表覆盖误差与系统参数误差之间关系的模型，并从该模型导出校准校正因子。

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