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21. 发明授权

US07940485B2 Magnetic recording and reproducing apparatus having a magnetic read head with a spin-torque oscillator 有权
标题翻译：具有带有自旋转矩振荡器的磁读头的磁记录和重放装置
公开(公告)号：US07940485B2
公开(公告)日：2011-05-10
申请号：US12549125
申请日：2009-08-27
申请人： Kiwamu Kudo , Koichi Mizushima , Tazumi Nagasawa , Rie Sato
发明人： Kiwamu Kudo , Koichi Mizushima , Tazumi Nagasawa , Rie Sato
IPC分类号： G11B5/02 , G11B5/127 , G11B21/02 , G11B15/46
CPC分类号： G11B5/3903 , B82Y25/00 , G01R33/093
摘要： A magnetic recording and reproducing apparatus includes a magnetic head that has a spin-torque oscillator and a magnetic disk and the spin-torque oscillator detects a magnetic field from the magnetic disk and outputs a signal. A criterion used to determine the rotational speed of the magnetic disk, the frequency shift of the spin-torque oscillator produced by a magnetic field from the magnetic disk, a characteristic oscillation frequency of the spin-torque oscillator and the full-width at half maximum of an oscillation spectrum is given in order for a read signal output from the spin-torque oscillator to satisfy a desired signal-to-noise ratio and a magnetic recording and reproducing apparatus is configured based on the criterion.
摘要翻译：磁记录和再现装置包括具有自旋扭矩振荡器和磁盘的磁头，并且自旋扭矩振荡器检测来自磁盘的磁场并输出信号。用于确定磁盘转速的标准，由磁盘产生的磁场产生的自旋扭矩振荡器的频率偏移，自旋转矩振荡器的特征振荡频率和半峰全宽度为了使自旋转矩振荡器输出的读取信号满足期望的信噪比，并且基于该标准配置磁记录和再现装置，给出振荡频谱。

22. 发明申请

US20130120875A1 HIGH-FREQUENCY MAGNETIC FIELD GENERATION ELEMENT AND MAGNETIC HEAD 有权
标题翻译：高频磁场发生元件和磁头
公开(公告)号：US20130120875A1
公开(公告)日：2013-05-16
申请号：US13678062
申请日：2012-11-15
申请人： Hirofumi SUTO , Tao Yang , Tazumi Nagasawa , Kiwamu Kudo , Rle Sato , Koichi Mizushima
发明人： Hirofumi SUTO , Tao Yang , Tazumi Nagasawa , Kiwamu Kudo , Rle Sato , Koichi Mizushima
IPC分类号： G11B5/187 , H01F7/00
CPC分类号： G11B5/187 , G11B5/3146 , G11B2005/0024 , H01F7/00 , H01F10/3263 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： According to one embodiment, a high-frequency magnetic field generation element includes a first fixed layer, a first free layer, and a second free layer. A direction of a magnetization of the first fixed layer is fixed and has a component parallel to a first direction. A direction of a magnetization of the first free layer is variable and has a component orthogonal to the first direction. A direction of a magnetization of the second free layer is variable and has a component orthogonal to the first direction. The first fixed layer is provided between the first free layer and the second free layer. The magnetizations of the first free layer and the second free layer oscillate. A rotation direction of the magnetization of the first free layer is opposite to a rotation direction of the magnetization of the second free layer.
摘要翻译：根据一个实施例，高频磁场产生元件包括第一固定层，第一自由层和第二自由层。第一固定层的磁化方向固定，并且具有平行于第一方向的分量。第一自由层的磁化方向是可变的并且具有与第一方向垂直的分量。第二自由层的磁化方向是可变的并且具有与第一方向垂直的分量。第一固定层设置在第一自由层和第二自由层之间。第一自由层和第二自由层的磁化振荡。第一自由层的磁化的旋转方向与第二自由层的磁化的旋转方向相反。

23. 发明授权

US08737122B2 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US08737122B2
公开(公告)日：2014-05-27
申请号：US13416076
申请日：2012-03-09
申请人： Daisuke Saida , Minoru Amano , Tazumi Nagasawa , Yuichi Ohsawa , Junichi Ito
发明人： Daisuke Saida , Minoru Amano , Tazumi Nagasawa , Yuichi Ohsawa , Junichi Ito
IPC分类号： G11C11/15 , G11C11/16
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a nonvolatile memory device includes a magnetic memory element and a control unit. The magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes a first ferromagnetic layer having a magnetization fixed, a second ferromagnetic layer having a magnetization variable and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second includes a third ferromagnetic layer having a magnetization rorated by a passed current to produce oscillation, a fourth ferromagnetic layer having a magnetization fixed and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers stacked with each other. A frequency of the oscillation changes in accordance with the direction of the magnetization of the second ferromagnetic layer. The control unit includes a reading unit reading out the magnetization of the second ferromagnetic layer.
摘要翻译：根据一个实施例，非易失性存储器件包括磁存储元件和控制单元。磁存储元件包括包括第一和第二堆叠单元的堆叠体。第一堆叠单元包括具有磁化固定的第一铁磁层，具有磁化变化的第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。第二铁磁层具有由通过的电流产生振荡的磁化的第三铁磁层，具有磁化固定的第四铁磁层和设置在彼此堆叠的第三和第四铁磁层之间的第二非磁性层。振荡的频率根据第二铁磁层的磁化方向而变化。控制单元包括读出第二铁磁层的磁化的读取单元。

24. 发明申请

US20130070522A1 NONVOLATILE MEMORY DEVICE 有权
标题翻译：非易失性存储器件
公开(公告)号：US20130070522A1
公开(公告)日：2013-03-21
申请号：US13416076
申请日：2012-03-09
申请人： Daisuke Saida , Minoru Amano , Tazumi Nagasawa , Yuichi Ohsawa , Junichi Ito
发明人： Daisuke Saida , Minoru Amano , Tazumi Nagasawa , Yuichi Ohsawa , Junichi Ito
IPC分类号： G11C11/15
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a nonvolatile memory device includes a magnetic memory element and a control unit. The magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes a first ferromagnetic layer having a magnetization fixed, a second ferromagnetic layer having a magnetization variable and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second includes a third ferromagnetic layer having a magnetization rorated by a passed current to produce oscillation, a fourth ferromagnetic layer having a magnetization fixed and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers stacked with each other. A frequency of the oscillation changes in accordance with the direction of the magnetization of the second ferromagnetic layer. The control unit includes a reading unit reading out the magnetization of the second ferromagnetic layer.
摘要翻译：根据一个实施例，非易失性存储器件包括磁存储元件和控制单元。磁存储元件包括包括第一和第二堆叠单元的堆叠体。第一堆叠单元包括具有磁化固定的第一铁磁层，具有磁化变化的第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。第二铁磁层具有通过通过的电流产生振荡的磁化的第三铁磁层，具有磁化固定的第四铁磁层和设置在彼此堆叠的第三和第四铁磁层之间的第二非磁性层。振荡的频率根据第二铁磁层的磁化方向而变化。控制单元包括读出第二铁磁层的磁化的读取单元。

25. 发明申请

US20080254230A1 PARTICLE DEPOSITION APPARATUS AND PARTICLE DEPOSITION METHOD 审中-公开
标题翻译：颗粒沉积装置和颗粒沉积方法
公开(公告)号：US20080254230A1
公开(公告)日：2008-10-16
申请号：US11842530
申请日：2007-08-21
申请人： Isao MATSUI , Tazumi Nagasawa
发明人： Isao MATSUI , Tazumi Nagasawa
IPC分类号： C23C16/452 , C23C16/02
CPC分类号： C23C4/134
摘要： An apparatus and method for depositing particles having uniform diameters onto a substrate are provided. In the particle deposition apparatus, starting materials in a starting gas are reacted with each other to produce particles which are then deposited onto a substrate. The particle deposition apparatus comprises: a reaction vessel comprising a reaction chamber and a back chamber in its interior, a starting gas supply port in communication with the reaction chamber, an exhaust port in communication with the back chamber, and a holder which is disposed within the back chamber and can hold the substrate; a plasma generator for producing plasma within the reaction chamber; and gas flow control unit configured to discharge a post-reaction gas through the exhaust port while producing the plasma. In the particle deposition apparatus, the introduced starting gas is allowed to react to produce and grow particles, and only particles having desired diameters are selected by taking advantage of balance between plasma-derived Coulomb force and gas flow-derived drag and are deposited onto a substrate.
摘要翻译：提供了一种用于将具有均匀直径的颗粒沉积到基底上的装置和方法。在颗粒沉积设备中，起始气体中的起始材料彼此反应，以产生随后沉积在基底上的颗粒。颗粒沉积装置包括：反应容器，其内部包括反应室和后室，与反应室连通的起始气体供给口，与后室连通的排气口和设置在内部的保持器后室并可夹持基板; 用于在反应室内产生等离子体的等离子体发生器; 以及气体流量控制单元，其被配置为在产生等离子体的同时将后反应气体排出所述排气口。在颗粒沉积装置中，引入的起始气体反应以产生和生长颗粒，并且仅通过利用等离子体源的库仑力和气体流量的阻力之间的平衡来选择具有期望直径的颗粒，并将其沉积在基质。

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