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21. 发明授权

US06824951B2 Photoresist composition for resist flow process 失效
标题翻译：用于抗流动过程的光刻胶组合物
公开(公告)号：US06824951B2
公开(公告)日：2004-11-30
申请号：US09947625
申请日：2001-09-06
申请人： Geun Su Lee , Jin Soo Kim , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
发明人： Geun Su Lee , Jin Soo Kim , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/0395 , G03F7/0392 , G03F7/40 , Y10S430/106 , Y10S430/111
摘要： A photoresist composition for a resist flow process and a method for forming a contact hole using the same. When a photoresist composition comprising a crosslinking agent of following Formula 1 or Formula 2, is used for a photoresist pattern formation process, it improves resist flow properties, L/S pattern resolution and contrast ratio. wherein R1, R2, R3 and R4 individually represent H or substituted or unsubstituted linear or branched (C1-C10) alkyl. wherein R5, R6 and R7 individually represent H, substituted or unsubstituted linear or branched (C1-C10) alkyl or substituted or unsubstituted linear or branched (C1-C10) alkoxy.
摘要翻译：用于抗蚀剂流动方法的光致抗蚀剂组合物和使用其形成接触孔的方法。当将包含下述通式1或式2的交联剂的光致抗蚀剂组合物用于光致抗蚀剂图形形成工艺时，其改善抗蚀剂流动性，L / S图案分辨率和对比度。其中R1，R2，R3和R4分别代表 H或取代或未取代的直链或支链（C1-C10）烷基，其中R5，R6和R7分别表示H，取代或未取代的直链或支链（C1-C10）烷基或取代或未取代的直链或支链（C1-C10）烷氧基。

22. 发明授权

US06811960B2 Partially crosslinked polymer for bilayer photoresist 失效
标题翻译：用于双层光致抗蚀剂的部分交联聚合物
公开(公告)号：US06811960B2
公开(公告)日：2004-11-02
申请号：US10436742
申请日：2003-05-12
申请人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
发明人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/0758 , C07F7/1804 , C08F30/08 , C08F232/04 , G03F7/0045 , G03F7/039 , Y02P20/55 , Y10S430/106 , Y10S430/111 , Y10S430/115 , C08F222/06 , C08F232/08 , C08F2222/1013
摘要： The present invention provides photoresist monomers, photoresist polymers derived from the same, processes for producing such photoresist polymers, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such photoresist compositions. In particular, photoresist monomers of the present invention comprise a moiety of Formula 4: where R1, R2, R3 and R4 are those defined herein. Photoresist polymers of the present invention have a relatively high etching resistance, and therefore are useful in a thin resist process and a bilayer photoresist process. Moreover, photoresist polymers of the present invention have a high contrast ratio between an exposed region and a non-exposed region.
摘要翻译：本发明提供光致抗蚀剂单体，由其衍生的光致抗蚀剂聚合物，用于制备这种光致抗蚀剂聚合物的方法，包含这种聚合物的光致抗蚀剂组合物，以及使用这种光致抗蚀剂组合物制备光特别地，本发明的光致抗蚀剂单体包含式4的部分：其中R 1，R 2，R 3和R 4是本文定义的那些。本发明的光致抗蚀剂聚合物具有相对高的抗蚀刻性，因此可用于薄抗蚀剂工艺和双层光刻胶工艺。此外，本发明的光致抗蚀剂聚合物在曝光区域和非曝光区域之间具有高对比度。

23. 发明授权

US06589707B2 Partially crosslinked polymer for bilayer photoresist 失效
标题翻译：用于双层光致抗蚀剂的部分交联聚合物
公开(公告)号：US06589707B2
公开(公告)日：2003-07-08
申请号：US09788181
申请日：2001-02-15
申请人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
发明人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/0758 , C07F7/1804 , C08F30/08 , C08F232/04 , G03F7/0045 , G03F7/039 , Y02P20/55 , Y10S430/106 , Y10S430/111 , Y10S430/115 , C08F222/06 , C08F232/08 , C08F2222/1013
摘要： The present invention provides photoresist monomers, photoresist polymers derived from the same, processes for producing such photoresist polymers, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such photoresist compositions. In particular, photoresist monomers of the present invention comprise a moiety of Formula 4: where R1, R2, R3 and R4 are those defined herein. Photoresist polymers of the present invention have a relatively high etching resistance, and therefore are useful in a thin resist process and a bilayer photoresist process. Moreover, photoresist polymers of the present invention have a high contrast ratio between an exposed region and a non-exposed region.
摘要翻译：本发明提供光致抗蚀剂单体，由其衍生的光致抗蚀剂聚合物，用于制备这种光致抗蚀剂聚合物的方法，包含这种聚合物的光致抗蚀剂组合物，以及使用这种光致抗蚀剂组合物制备光特别地，本发明的光致抗蚀剂单体包含式4的部分：其中R 1，R 2，R 3和R 4是本文定义的那些。本发明的光致抗蚀剂聚合物具有相对高的抗蚀刻性，因此可用于薄抗蚀剂工艺和双层光刻胶工艺。此外，本发明的光致抗蚀剂聚合物在曝光区域和非曝光区域之间具有高对比度。

24. 发明授权

US06416926B1 Thiabicyclo compound, a polymer-containing said compound, and a photoresist micro pattern forming method using the same 失效
标题翻译：二硫化双环化合物，含聚合物的所述化合物和使用其的光致抗蚀剂微图案形成方法
公开(公告)号：US06416926B1
公开(公告)日：2002-07-09
申请号：US09630818
申请日：2000-08-02
申请人： Jae Chang Jung , Chi Hyeong Roh , Min Ho Jung , Geun Su Lee , Ki Ho Baik
发明人： Jae Chang Jung , Chi Hyeong Roh , Min Ho Jung , Geun Su Lee , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/039 , G03F7/0045
摘要： The present invention provides heterobicyclo compounds of the formula: and a method for preparing the same, where Z, X, R1, R2, and m are those defined herein. Compounds of the present invention can be used as monomers for preparing a photoresist resin which is useful, for example, ultra-violet wavelength photolithography processes.
摘要翻译：本发明提供下式的异二环化合物及其制备方法，其中Z，X，R 1，R 2和m为本文定义的那些。本发明的化合物可以用作制备光致抗蚀剂树脂的单体，其可用于例如紫外线波长光刻工艺。

25. 发明授权

US06200731B1 Photoresist cross-linking monomers, photoresist polymers and photoresist compositions comprising the same 有权
标题翻译：光致抗蚀剂交联单体，光致抗蚀剂聚合物和包含其的光致抗蚀剂组合物
公开(公告)号：US06200731B1
公开(公告)日：2001-03-13
申请号：US09465112
申请日：1999-12-16
申请人： Geun Su Lee , Cha Won Koh , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
发明人： Geun Su Lee , Cha Won Koh , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
IPC分类号： G03C173
CPC分类号： C07D519/00 , C07C69/753 , Y10S430/115
摘要： The present invention discloses a cross-linking monomer for a photoresist polymer represented by following Chemical Formula 1: wherein, V represents CH2, CH2CH2, oxygen or sulfur; Y is selected from the group consisting of straight or branched C1-10 alkyl, oxygen, and straight or branched C1-10 ether; R′ and R″ individually represent H or CH3; i is a number of 1 to 5; and n is a number of 0 to 3; and a process for preparing a photoresist copolymer comprising the same.
摘要翻译：本发明公开了由以下化学式1表示的光致抗蚀剂聚合物交联单体：<化学式1>其中V表示CH 2，CH 2 CH 2，氧或硫; Y选自直链或支链C 1-10烷基，氧和直链或支链C1-10醚; R'和R“分别表示H或CH 3; 我是1到5的数字; n为0〜3的数; 以及制备包含该光致抗蚀剂的光致抗蚀剂共聚物的方法。

26. 发明授权

US06770414B2 Additive for photoresist composition for resist flow process 失效
标题翻译：光刻胶组合物用于抗蚀剂流程的添加剂
公开(公告)号：US06770414B2
公开(公告)日：2004-08-03
申请号：US09878803
申请日：2001-06-11
申请人： Min Ho Jung , Sung Eun Hong , Jae Chang Jung , Geun Su Lee , Ki Ho Baik
发明人： Min Ho Jung , Sung Eun Hong , Jae Chang Jung , Geun Su Lee , Ki Ho Baik
IPC分类号： G03F700
CPC分类号： G03F7/0395 , C07J9/00 , G03F7/0045 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10T428/24802
摘要： The present invention provides an additive for a photoresist composition for a resist flow process. A compound of following Formula 1 having low glass transition temperature is added to a photoresist composition containing a polymer which is not suitable for the resist flow process due to its high glass transition temperature, thus improving a flow property of the photoresist composition. As a result, the photoresist composition comprising an additive of Formula 1 can be used for the resist flow process. wherein, A, B, R and R′ are as defined in the specification of the invention.
摘要翻译：本发明提供了用于抗蚀剂流动方法的光致抗蚀剂组合物的添加剂。将具有低玻璃化转变温度的下述式1化合物加入含有聚合物的光致抗蚀剂组合物中，该聚合物由于其玻璃化转变温度高而不适于抗蚀剂流动过程，从而改善光致抗蚀剂组合物的流动性能。结果，包含式1的添加剂的光致抗蚀剂组合物可用于抗蚀剂流动过程。其中A，B，R和R'如本发明的说明书中所定义。

27. 发明授权

US06627379B2 Photoresist composition for resist flow process, and process for forming contact hole using the same 失效
公开(公告)号：US06627379B2
公开(公告)日：2003-09-30
申请号：US09837394
申请日：2001-04-18
申请人： Jin Soo Kim , Jae Chang Jung , Geun Su Lee , Ki Ho Baik
发明人： Jin Soo Kim , Jae Chang Jung , Geun Su Lee , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/40 , G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/111
摘要： Photoresist compositions which are useful in a resist flow process are disclosed. A process for forming a contact hole pattern using the disclosed photoresist compositions is also disclosed. The disclosed photoresist resin includes a mixture of two or more polymers. Preferably, a mixture of a first copolymer and a second copolymer are cross-linked, and thus it prevents a contact hole from being collapsed due to over flow which is typically observed during a conventional resist flow process. In addition, the disclosed photoresist compositions allow formation of uniform sized patterns.

28. 发明授权

US06569599B2 Partially crosslinked polymer for bilayer photoresist 失效
标题翻译：用于双层光致抗蚀剂的部分交联聚合物
公开(公告)号：US06569599B2
公开(公告)日：2003-05-27
申请号：US09852371
申请日：2001-05-10
申请人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
发明人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/0758 , G03F7/0045 , G03F7/095 , Y10S430/106 , Y10S430/111
摘要： The present invention provides photoresist polymers, processes for producing the same, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such photoresist compositions. In particular, photoresist polymers of the present invention comprise a moiety of the Formula: where R1, R2, R3 and R4 are those defined herein. Photoresist polymers of the present invention have a relatively high etching resistance, and therefore are useful in thin resist processes and bilayer photoresist processes. Moreover, photoresist polymers of the present invention have a high contrast ratio between the exposed region and the non-exposed region.
摘要翻译：本发明提供光致抗蚀剂聚合物，其制备方法，包含这种聚合物的光致抗蚀剂组合物，以及使用这种光致抗蚀剂组合物制备光刻胶图案的方法。特别地，本发明的光致抗蚀剂聚合物包含下式的部分：其中R 1，R 2，R 3和R 4是本文定义的那些。本发明的光致抗蚀剂聚合物具有相对高的抗蚀刻性，因此可用于薄抗蚀剂工艺和双层光刻胶工艺。此外，本发明的光致抗蚀剂聚合物在曝光区域和非曝光区域之间具有高对比度。

29. 发明授权

US06391518B1 Polymers and photoresist compositions using the same 失效
标题翻译：聚合物和使用其的光致抗蚀剂组合物
公开(公告)号：US06391518B1
公开(公告)日：2002-05-21
申请号：US09360402
申请日：1999-07-23
申请人： Min Ho Jung , Jae Chang Jung , Geun Su Lee , Ki Ho Baik
发明人： Min Ho Jung , Jae Chang Jung , Geun Su Lee , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： C08F232/08 , G03F7/0382 , G03F7/0395
摘要： The present invention provides a photoresist monomer represented by the following formula 2; a photoresist copolymer represented by the following formula 100; and a photoresist composition containing the same. wherein, R1 and R2 are independently —COOH or —R—COOH; and R is a substituted or unsubstituted (C1-C10) alkyl. wherein, R1 and R2 are independently —COOH or —R—COOH ; R is a substituted or unsubstituted (C1-C10) alkyl; R3 is —COOR* or —R′COOR*; R* is an acid labile group; R′ is a substituted or unsubstituted (C1-C10) alkyl; R4 is H or R3; R5 is a substituted or unsubstituted (C1-C10) alkyl; and a:b:c is the polymerization ratio of the comonomer.
摘要翻译：本发明提供由下式2表示的光致抗蚀剂单体; 由下式100表示的光致抗蚀剂共聚物; 和含有它们的光致抗蚀剂组合物，其中R 1和R 2独立地是-COOH或-R-COOH; 并且R是取代或未取代的（C1-C10）烷基。其中R1和R2独立地是-COOH或-R-COOH; R是取代或未取代的（C 1 -C 10）烷基; R3是-COOR *或-R'COOR *; R *是酸不稳定组; R'是取代或未取代的（C 1 -C 10）烷基; R4是H或R3; R5是取代或未取代的（C1-C10）烷基; 和a：b：c是共聚单体的聚合比。

30. 发明授权

US06376632B1 Photoresist polymers of carboxyl-containing alicyclic compounds 失效
标题翻译：含羧基脂环化合物的光致抗蚀剂聚合物
公开(公告)号：US06376632B1
公开(公告)日：2002-04-23
申请号：US09850177
申请日：2001-05-07
申请人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Cheol Kyu Bok , Ki Ho Baik
发明人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Cheol Kyu Bok , Ki Ho Baik
IPC分类号： C08F13204
CPC分类号： C07C59/46 , C07C57/26 , C07C59/80 , C07C69/608 , C07C69/732 , C07C69/738 , C08G61/08 , G03F7/0045 , G03F7/039 , Y10S430/106
摘要： The present invention relates to a carboxyl-containing alicyclic compound represented by Chemical Formula 1: [formula 1] wherein, R1 and R2, which may be identical to or different from each other, represent hydrogen or a tert-butyl group; X represents hydrogen, hydroxy or oxygen; and n represents a number from 1 to 3. Compounds of the present invention are useful as monomers in a photoresist resin, and in a process for preparing the same.
摘要翻译：本发明涉及由化学式1表示的含羧基脂环族化合物：[式1]其中R1和R2可以相同或不同，表示氢或叔丁基; X表示氢，羟基或氧; n表示1〜3的数。本发明的化合物可用作光致抗蚀剂树脂中的单体，也可用作其制备方法。

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